DE3785249D1 - Duennfilm-feldeffekttransistor. - Google Patents

Duennfilm-feldeffekttransistor.

Info

Publication number
DE3785249D1
DE3785249D1 DE8787108356T DE3785249T DE3785249D1 DE 3785249 D1 DE3785249 D1 DE 3785249D1 DE 8787108356 T DE8787108356 T DE 8787108356T DE 3785249 T DE3785249 T DE 3785249T DE 3785249 D1 DE3785249 D1 DE 3785249D1
Authority
DE
Germany
Prior art keywords
thin film
field effect
effect transistor
film field
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787108356T
Other languages
English (en)
Other versions
DE3785249T2 (de
Inventor
Nobutake Konishi
Kenji Miyata
Yoshikazu Hosokawa
Takaya Suzuki
Akio Mimura Akio Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3785249D1 publication Critical patent/DE3785249D1/de
Application granted granted Critical
Publication of DE3785249T2 publication Critical patent/DE3785249T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L2029/7863Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
DE87108356T 1986-06-11 1987-06-10 Dünnfilm-Feldeffekttransistor. Expired - Fee Related DE3785249T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61133689A JPH0620140B2 (ja) 1986-06-11 1986-06-11 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
DE3785249D1 true DE3785249D1 (de) 1993-05-13
DE3785249T2 DE3785249T2 (de) 1993-10-14

Family

ID=15110576

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87108356T Expired - Fee Related DE3785249T2 (de) 1986-06-11 1987-06-10 Dünnfilm-Feldeffekttransistor.

Country Status (4)

Country Link
US (1) US4746961A (de)
EP (1) EP0249204B1 (de)
JP (1) JPH0620140B2 (de)
DE (1) DE3785249T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01302768A (ja) * 1988-05-30 1989-12-06 Seikosha Co Ltd 逆スタガー型シリコン薄膜トランジスタ
US5012306A (en) * 1989-09-22 1991-04-30 Board Of Regents, The University Of Texas System Hot-carrier suppressed sub-micron MISFET device
JPH04226079A (ja) * 1990-04-17 1992-08-14 Canon Inc 半導体装置及びその製造方法及びそれを有する電子回路装置
JP2566175B2 (ja) * 1990-04-27 1996-12-25 セイコー電子工業株式会社 半導体装置及びその製造方法
GB9113979D0 (en) * 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistors and their manufacture
US5352914A (en) * 1992-08-03 1994-10-04 Hughes Aircraft Company Field-effect transistor with structure for suppressing hot-electron effects, and method of fabricating the transistor
EP0689085B1 (de) * 1994-06-20 2003-01-29 Canon Kabushiki Kaisha Anzeigevorrichtung und Verfahren zu ihrer Herstellung
US6642574B2 (en) 1997-10-07 2003-11-04 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
EP0892440A1 (de) 1997-07-18 1999-01-20 Hitachi Europe Limited Bauelement mit kontrollierbarer Leitung
US6060723A (en) 1997-07-18 2000-05-09 Hitachi, Ltd. Controllable conduction device
US6169308B1 (en) 1996-11-15 2001-01-02 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
JP2005228819A (ja) * 2004-02-10 2005-08-25 Mitsubishi Electric Corp 半導体装置
US8405085B2 (en) 2010-12-01 2013-03-26 Au Optronics Corporation Thin film transistor capable of reducing photo current leakage
US9814262B2 (en) 2012-07-11 2017-11-14 Sis Resources, Ltd. Hot-wire control for an electronic cigarette
GB2515750B (en) * 2013-07-01 2017-11-15 Flexenable Ltd Supressing Leakage Currents in a Multi - TFT Device
KR102098663B1 (ko) * 2013-10-11 2020-04-08 삼성전자주식회사 정전기 방전 보호 소자
US9748246B2 (en) 2014-11-06 2017-08-29 Samsung Electronics Co., Ltd. Semiconductor integrated circuits having contacts spaced apart from active regions
CN105405892B (zh) * 2015-12-14 2019-02-12 深圳市华星光电技术有限公司 一种薄膜晶体管及阵列基板
WO2020084708A1 (ja) * 2018-10-24 2020-04-30 堺ディスプレイプロダクト株式会社 薄膜トランジスタおよびその製造方法
CN109713044B (zh) * 2018-12-25 2021-04-13 惠科股份有限公司 一种薄膜晶体管及制作方法和显示面板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
US4087902A (en) * 1976-06-23 1978-05-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Field effect transistor and method of construction thereof
US4199773A (en) * 1978-08-29 1980-04-22 Rca Corporation Insulated gate field effect silicon-on-sapphire transistor and method of making same
JPS58219766A (ja) * 1982-06-14 1983-12-21 Matsushita Electric Ind Co Ltd Mos型半導体装置の製造方法
JPS6072272A (ja) * 1983-09-28 1985-04-24 Toshiba Corp 半導体装置の製造方法
JPS60198865A (ja) * 1984-03-23 1985-10-08 Nec Corp 薄膜トランジスタ

Also Published As

Publication number Publication date
US4746961A (en) 1988-05-24
JPH0620140B2 (ja) 1994-03-16
EP0249204B1 (de) 1993-04-07
DE3785249T2 (de) 1993-10-14
EP0249204A2 (de) 1987-12-16
JPS62291063A (ja) 1987-12-17
EP0249204A3 (en) 1988-05-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee