DE3785249D1 - Duennfilm-feldeffekttransistor. - Google Patents
Duennfilm-feldeffekttransistor.Info
- Publication number
- DE3785249D1 DE3785249D1 DE8787108356T DE3785249T DE3785249D1 DE 3785249 D1 DE3785249 D1 DE 3785249D1 DE 8787108356 T DE8787108356 T DE 8787108356T DE 3785249 T DE3785249 T DE 3785249T DE 3785249 D1 DE3785249 D1 DE 3785249D1
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- field effect
- effect transistor
- film field
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L2029/7863—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
Landscapes
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61133689A JPH0620140B2 (ja) | 1986-06-11 | 1986-06-11 | 薄膜トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3785249D1 true DE3785249D1 (de) | 1993-05-13 |
DE3785249T2 DE3785249T2 (de) | 1993-10-14 |
Family
ID=15110576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE87108356T Expired - Fee Related DE3785249T2 (de) | 1986-06-11 | 1987-06-10 | Dünnfilm-Feldeffekttransistor. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4746961A (de) |
EP (1) | EP0249204B1 (de) |
JP (1) | JPH0620140B2 (de) |
DE (1) | DE3785249T2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01302768A (ja) * | 1988-05-30 | 1989-12-06 | Seikosha Co Ltd | 逆スタガー型シリコン薄膜トランジスタ |
US5012306A (en) * | 1989-09-22 | 1991-04-30 | Board Of Regents, The University Of Texas System | Hot-carrier suppressed sub-micron MISFET device |
JPH04226079A (ja) * | 1990-04-17 | 1992-08-14 | Canon Inc | 半導体装置及びその製造方法及びそれを有する電子回路装置 |
JP2566175B2 (ja) * | 1990-04-27 | 1996-12-25 | セイコー電子工業株式会社 | 半導体装置及びその製造方法 |
GB9113979D0 (en) * | 1991-06-28 | 1991-08-14 | Philips Electronic Associated | Thin-film transistors and their manufacture |
US5352914A (en) * | 1992-08-03 | 1994-10-04 | Hughes Aircraft Company | Field-effect transistor with structure for suppressing hot-electron effects, and method of fabricating the transistor |
EP0689085B1 (de) * | 1994-06-20 | 2003-01-29 | Canon Kabushiki Kaisha | Anzeigevorrichtung und Verfahren zu ihrer Herstellung |
US6642574B2 (en) | 1997-10-07 | 2003-11-04 | Hitachi, Ltd. | Semiconductor memory device and manufacturing method thereof |
EP0892440A1 (de) | 1997-07-18 | 1999-01-20 | Hitachi Europe Limited | Bauelement mit kontrollierbarer Leitung |
US6060723A (en) | 1997-07-18 | 2000-05-09 | Hitachi, Ltd. | Controllable conduction device |
US6169308B1 (en) | 1996-11-15 | 2001-01-02 | Hitachi, Ltd. | Semiconductor memory device and manufacturing method thereof |
JP2005228819A (ja) * | 2004-02-10 | 2005-08-25 | Mitsubishi Electric Corp | 半導体装置 |
US8405085B2 (en) | 2010-12-01 | 2013-03-26 | Au Optronics Corporation | Thin film transistor capable of reducing photo current leakage |
US9814262B2 (en) | 2012-07-11 | 2017-11-14 | Sis Resources, Ltd. | Hot-wire control for an electronic cigarette |
GB2515750B (en) * | 2013-07-01 | 2017-11-15 | Flexenable Ltd | Supressing Leakage Currents in a Multi - TFT Device |
KR102098663B1 (ko) * | 2013-10-11 | 2020-04-08 | 삼성전자주식회사 | 정전기 방전 보호 소자 |
US9748246B2 (en) | 2014-11-06 | 2017-08-29 | Samsung Electronics Co., Ltd. | Semiconductor integrated circuits having contacts spaced apart from active regions |
CN105405892B (zh) * | 2015-12-14 | 2019-02-12 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管及阵列基板 |
WO2020084708A1 (ja) * | 2018-10-24 | 2020-04-30 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタおよびその製造方法 |
CN109713044B (zh) * | 2018-12-25 | 2021-04-13 | 惠科股份有限公司 | 一种薄膜晶体管及制作方法和显示面板 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
US4087902A (en) * | 1976-06-23 | 1978-05-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Field effect transistor and method of construction thereof |
US4199773A (en) * | 1978-08-29 | 1980-04-22 | Rca Corporation | Insulated gate field effect silicon-on-sapphire transistor and method of making same |
JPS58219766A (ja) * | 1982-06-14 | 1983-12-21 | Matsushita Electric Ind Co Ltd | Mos型半導体装置の製造方法 |
JPS6072272A (ja) * | 1983-09-28 | 1985-04-24 | Toshiba Corp | 半導体装置の製造方法 |
JPS60198865A (ja) * | 1984-03-23 | 1985-10-08 | Nec Corp | 薄膜トランジスタ |
-
1986
- 1986-06-11 JP JP61133689A patent/JPH0620140B2/ja not_active Expired - Lifetime
-
1987
- 1987-06-08 US US07/059,785 patent/US4746961A/en not_active Expired - Lifetime
- 1987-06-10 DE DE87108356T patent/DE3785249T2/de not_active Expired - Fee Related
- 1987-06-10 EP EP87108356A patent/EP0249204B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4746961A (en) | 1988-05-24 |
JPH0620140B2 (ja) | 1994-03-16 |
EP0249204B1 (de) | 1993-04-07 |
DE3785249T2 (de) | 1993-10-14 |
EP0249204A2 (de) | 1987-12-16 |
JPS62291063A (ja) | 1987-12-17 |
EP0249204A3 (en) | 1988-05-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |