DE60312676D1 - Referenzspannungsschaltung - Google Patents

Referenzspannungsschaltung

Info

Publication number
DE60312676D1
DE60312676D1 DE60312676T DE60312676T DE60312676D1 DE 60312676 D1 DE60312676 D1 DE 60312676D1 DE 60312676 T DE60312676 T DE 60312676T DE 60312676 T DE60312676 T DE 60312676T DE 60312676 D1 DE60312676 D1 DE 60312676D1
Authority
DE
Germany
Prior art keywords
reference voltage
voltage circuit
circuit
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60312676T
Other languages
English (en)
Inventor
Anna Sigurdardottir
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Ltd Great Britain
Original Assignee
SGS Thomson Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Ltd filed Critical SGS Thomson Microelectronics Ltd
Application granted granted Critical
Publication of DE60312676D1 publication Critical patent/DE60312676D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
DE60312676T 2003-07-22 2003-07-22 Referenzspannungsschaltung Expired - Lifetime DE60312676D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03254576A EP1501000B1 (de) 2003-07-22 2003-07-22 Referenzspannungsschaltung

Publications (1)

Publication Number Publication Date
DE60312676D1 true DE60312676D1 (de) 2007-05-03

Family

ID=33484031

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60312676T Expired - Lifetime DE60312676D1 (de) 2003-07-22 2003-07-22 Referenzspannungsschaltung

Country Status (3)

Country Link
US (1) US7057382B2 (de)
EP (1) EP1501000B1 (de)
DE (1) DE60312676D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7382179B2 (en) * 2005-01-03 2008-06-03 Geller Joseph M Voltage reference with enhanced stability
DE102005033434A1 (de) * 2005-07-18 2007-01-25 Infineon Technologies Ag Referenzspannungserzeugungsschaltung zur Erzeugung kleiner Referenzspannungen
US20100169037A1 (en) * 2008-12-29 2010-07-01 Texas Instruments Incorporated Flash memory threshold voltage characterization
JP2010224594A (ja) * 2009-03-19 2010-10-07 Oki Semiconductor Co Ltd 電圧発生回路
JP2014130099A (ja) * 2012-12-28 2014-07-10 Toshiba Corp 温度検出回路、温度補償回路およびバッファ回路
US10691156B2 (en) * 2017-08-31 2020-06-23 Texas Instruments Incorporated Complementary to absolute temperature (CTAT) voltage generator

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940003406B1 (ko) * 1991-06-12 1994-04-21 삼성전자 주식회사 내부 전원전압 발생회로
US5281906A (en) * 1991-10-29 1994-01-25 Lattice Semiconductor Corporation Tunable voltage reference circuit to provide an output voltage with a predetermined temperature coefficient independent of variation in supply voltage
US5220273A (en) * 1992-01-02 1993-06-15 Etron Technology, Inc. Reference voltage circuit with positive temperature compensation
JP3114391B2 (ja) * 1992-10-14 2000-12-04 三菱電機株式会社 中間電圧発生回路
US5448159A (en) * 1994-05-12 1995-09-05 Matsushita Electronics Corporation Reference voltage generator
EP0915407B1 (de) * 1997-11-05 2009-03-04 STMicroelectronics S.r.l. Temperaturkorrelierter Spannungsgeneratorschaltkreis und zugehöriger Spannungsregler für die Speisung einer Speicherzelle mit einer einzigen Stromversorgung, insbesondere vom FLASH-Typ
KR100399437B1 (ko) * 2001-06-29 2003-09-29 주식회사 하이닉스반도체 내부 전원전압 발생장치
US6710586B2 (en) * 2001-11-22 2004-03-23 Denso Corporation Band gap reference voltage circuit for outputting constant output voltage

Also Published As

Publication number Publication date
EP1501000B1 (de) 2007-03-21
US7057382B2 (en) 2006-06-06
EP1501000A1 (de) 2005-01-26
US20050040805A1 (en) 2005-02-24

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Legal Events

Date Code Title Description
8332 No legal effect for de