DE60312102D1 - Heteroübergang-Bipolartransistor - Google Patents
Heteroübergang-BipolartransistorInfo
- Publication number
- DE60312102D1 DE60312102D1 DE60312102T DE60312102T DE60312102D1 DE 60312102 D1 DE60312102 D1 DE 60312102D1 DE 60312102 T DE60312102 T DE 60312102T DE 60312102 T DE60312102 T DE 60312102T DE 60312102 D1 DE60312102 D1 DE 60312102D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- heterojunction bipolar
- heterojunction
- transistor
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002316011 | 2002-10-30 | ||
JP2002316011 | 2002-10-30 | ||
JP2003318668 | 2003-09-10 | ||
JP2003318668A JP2004172582A (ja) | 2002-10-30 | 2003-09-10 | ヘテロ接合バイポーラトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60312102D1 true DE60312102D1 (de) | 2007-04-12 |
DE60312102T2 DE60312102T2 (de) | 2007-10-31 |
Family
ID=32095468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60312102T Expired - Lifetime DE60312102T2 (de) | 2002-10-30 | 2003-10-16 | Heteroübergang-Bipolartransistor |
Country Status (6)
Country | Link |
---|---|
US (1) | US7030462B2 (de) |
EP (1) | EP1416539B1 (de) |
JP (1) | JP2004172582A (de) |
KR (1) | KR100514109B1 (de) |
DE (1) | DE60312102T2 (de) |
TW (1) | TWI230421B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7875523B1 (en) | 2004-10-15 | 2011-01-25 | Hrl Laboratories, Llc | HBT with emitter electrode having planar side walls |
US7598148B1 (en) | 2004-10-15 | 2009-10-06 | Fields Charles H | Non-self-aligned heterojunction bipolar transistor and a method for preparing a non-self-aligned heterojunction bipolar transistor |
US7396731B1 (en) * | 2004-10-15 | 2008-07-08 | Hrl Laboratories, Llc | Method for preparing a non-self-aligned heterojunction bipolar transistor with a small emitter-to-base spacing |
FR2888664B1 (fr) * | 2005-07-18 | 2008-05-02 | Centre Nat Rech Scient | Procede de realisation d'un transistor bipolaire a heterojonction |
US8796149B1 (en) | 2013-02-18 | 2014-08-05 | International Business Machines Corporation | Collector-up bipolar junction transistors in BiCMOS technology |
CN105051873B (zh) | 2013-03-19 | 2017-06-13 | 株式会社村田制作所 | 异质结双极晶体管 |
JP2016184675A (ja) | 2015-03-26 | 2016-10-20 | 住友化学株式会社 | ヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ及びヘテロ接合バイポーラトランジスタ |
JP2018010896A (ja) * | 2016-07-11 | 2018-01-18 | 株式会社村田製作所 | ヘテロ接合バイポーラトランジスタ |
JP2022142223A (ja) * | 2021-03-16 | 2022-09-30 | 本田技研工業株式会社 | 残存寿命予測方法、残存寿命予測システム及び車両 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5116455A (en) * | 1991-01-24 | 1992-05-26 | Spire Corporation | Process of making strain-free, carbon-doped epitaxial layers and products so made |
JP3314183B2 (ja) | 1992-05-20 | 2002-08-12 | 日本電信電話株式会社 | ヘテロ接合バイポーラトランジスタ |
JPH0637015A (ja) | 1992-07-21 | 1994-02-10 | Nec Corp | セレン化亜鉛結晶の製造方法 |
US5682046A (en) * | 1993-08-12 | 1997-10-28 | Fujitsu Limited | Heterojunction bipolar semiconductor device and its manufacturing method |
US5631477A (en) * | 1995-06-02 | 1997-05-20 | Trw Inc. | Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor |
DE19834491A1 (de) | 1998-07-31 | 2000-02-03 | Daimler Chrysler Ag | Anordnung und Verfahren zur Herstellung eines Heterobipolartransistors |
JP2000323491A (ja) | 1999-05-06 | 2000-11-24 | Nec Corp | ヘテロ接合バイポーラトランジスタ及びその製造方法 |
JP3392788B2 (ja) * | 1999-08-19 | 2003-03-31 | シャープ株式会社 | 半導体装置 |
US6482711B1 (en) * | 1999-10-28 | 2002-11-19 | Hrl Laboratories, Llc | InPSb/InAs BJT device and method of making |
FR2803102B1 (fr) | 1999-12-23 | 2002-03-22 | Thomson Csf | Transistor bipolaire a heterojonction a collecteur en haut et procede de realisation |
JP3998408B2 (ja) * | 2000-09-29 | 2007-10-24 | 株式会社東芝 | 半導体装置及びその製造方法 |
-
2003
- 2003-09-10 JP JP2003318668A patent/JP2004172582A/ja active Pending
- 2003-10-16 DE DE60312102T patent/DE60312102T2/de not_active Expired - Lifetime
- 2003-10-16 EP EP03023607A patent/EP1416539B1/de not_active Expired - Lifetime
- 2003-10-29 US US10/694,889 patent/US7030462B2/en not_active Expired - Fee Related
- 2003-10-30 KR KR10-2003-0076494A patent/KR100514109B1/ko not_active IP Right Cessation
- 2003-10-30 TW TW092130289A patent/TWI230421B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE60312102T2 (de) | 2007-10-31 |
KR100514109B1 (ko) | 2005-09-09 |
TW200416896A (en) | 2004-09-01 |
JP2004172582A (ja) | 2004-06-17 |
EP1416539B1 (de) | 2007-02-28 |
US7030462B2 (en) | 2006-04-18 |
EP1416539A3 (de) | 2005-01-26 |
US20040089875A1 (en) | 2004-05-13 |
KR20040038855A (ko) | 2004-05-08 |
TWI230421B (en) | 2005-04-01 |
EP1416539A2 (de) | 2004-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |