DE60230124D1 - WITH INCREASED POWER BY ELECTRON RADIATION AND INTEGRATED CIRCUIT WITH THIS TRANSISTOR GATE - Google Patents

WITH INCREASED POWER BY ELECTRON RADIATION AND INTEGRATED CIRCUIT WITH THIS TRANSISTOR GATE

Info

Publication number
DE60230124D1
DE60230124D1 DE60230124T DE60230124T DE60230124D1 DE 60230124 D1 DE60230124 D1 DE 60230124D1 DE 60230124 T DE60230124 T DE 60230124T DE 60230124 T DE60230124 T DE 60230124T DE 60230124 D1 DE60230124 D1 DE 60230124D1
Authority
DE
Germany
Prior art keywords
integrated circuit
transistor gate
increased power
electron radiation
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60230124T
Other languages
German (de)
Inventor
Philip A Fisher
Chih-Yuh Yang
Marina V Plat
Russell R Callahan
Ashok M Khathuria
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/819,552 external-priority patent/US6815359B2/en
Priority claimed from US09/819,342 external-priority patent/US6630288B2/en
Priority claimed from US09/820,143 external-priority patent/US6774365B2/en
Priority claimed from US09/819,344 external-priority patent/US6653231B2/en
Priority claimed from US09/819,343 external-priority patent/US6716571B2/en
Priority claimed from US09/819,692 external-priority patent/US6589709B1/en
Priority claimed from US10/017,855 external-priority patent/US6828259B2/en
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority claimed from PCT/US2002/005640 external-priority patent/WO2002078095A2/en
Application granted granted Critical
Publication of DE60230124D1 publication Critical patent/DE60230124D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

DE60230124T 2001-03-28 2002-02-22 WITH INCREASED POWER BY ELECTRON RADIATION AND INTEGRATED CIRCUIT WITH THIS TRANSISTOR GATE Expired - Lifetime DE60230124D1 (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US09/819,342 US6630288B2 (en) 2001-03-28 2001-03-28 Process for forming sub-lithographic photoresist features by modification of the photoresist surface
US09/820,143 US6774365B2 (en) 2001-03-28 2001-03-28 SEM inspection and analysis of patterned photoresist features
US09/819,344 US6653231B2 (en) 2001-03-28 2001-03-28 Process for reducing the critical dimensions of integrated circuit device features
US09/819,552 US6815359B2 (en) 2001-03-28 2001-03-28 Process for improving the etch stability of ultra-thin photoresist
US09/819,343 US6716571B2 (en) 2001-03-28 2001-03-28 Selective photoresist hardening to facilitate lateral trimming
US09/819,692 US6589709B1 (en) 2001-03-28 2001-03-28 Process for preventing deformation of patterned photoresist features
US10/017,855 US6828259B2 (en) 2001-03-28 2001-12-14 Enhanced transistor gate using E-beam radiation
PCT/US2002/005640 WO2002078095A2 (en) 2001-03-28 2002-02-22 Method of forming enhanced transistor gate using e-beam radiation and integrated circuit including this transistor gate

Publications (1)

Publication Number Publication Date
DE60230124D1 true DE60230124D1 (en) 2009-01-15

Family

ID=40121781

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60230124T Expired - Lifetime DE60230124D1 (en) 2001-03-28 2002-02-22 WITH INCREASED POWER BY ELECTRON RADIATION AND INTEGRATED CIRCUIT WITH THIS TRANSISTOR GATE

Country Status (1)

Country Link
DE (1) DE60230124D1 (en)

Similar Documents

Publication Publication Date Title
DE602004015853D1 (en) High-frequency circuit and semiconductor device
DE60009214D1 (en) Power biased gate MOSFET
DE602004017541D1 (en) High-frequency switching device and semiconductor device
DE60232480D1 (en) High-voltage semiconductor device
DE60225360D1 (en) Voltage regulator and integrated semiconductor circuit
DE10066443B8 (en) Semiconductor device with radiating components
DE10362232B8 (en) Power semiconductor device
DE60202425D1 (en) High-frequency semiconductor device
DE60236897D1 (en) Power supply and electronic device
DE60312055D1 (en) Polythiophene and devices made therewith
DE60308738D1 (en) Polythiophene and devices made therewith
DE60305541D1 (en) Polythiophene and devices made therewith
DE202004021352U8 (en) Power semiconductor devices
NO20022736D0 (en) Circuit enclosure with an integrated double chip
DE60330402D1 (en) Polythiophene and devices made therewith
DE60302831D1 (en) Semiconductor switch with insulated MOS transistors
EP1737032A4 (en) Semiconductor integrated circuit device and switching power source device using the same
DE60307333D1 (en) Polythiophene and devices made therewith
DE60307687D1 (en) Polythiophene and devices made therewith
DE112005001434T5 (en) MOS gate-connected power semiconductor device with source field electrode
GB0503964D0 (en) Integrated circuit with high electron mobility transistor
DE50214320D1 (en) ORGANIC FIELD EFFECT TRANSISTOR WITH SHIFTED THRESHOLD VOLTAGE AND USE THEREOF
DE602004000153D1 (en) Antenna arrangement and thus equipped electronic device
DE50312845D1 (en) INTEGRATED CIRCUIT ARRANGEMENT WITH INTEGRATED CONDENSER
DE60321866D1 (en) Semiconductor integrated circuit device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GLOBALFOUNDRIES, INC., GRAND CAYMANN, KY

8328 Change in the person/name/address of the agent

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER,