DE60230124D1 - WITH INCREASED POWER BY ELECTRON RADIATION AND INTEGRATED CIRCUIT WITH THIS TRANSISTOR GATE - Google Patents
WITH INCREASED POWER BY ELECTRON RADIATION AND INTEGRATED CIRCUIT WITH THIS TRANSISTOR GATEInfo
- Publication number
- DE60230124D1 DE60230124D1 DE60230124T DE60230124T DE60230124D1 DE 60230124 D1 DE60230124 D1 DE 60230124D1 DE 60230124 T DE60230124 T DE 60230124T DE 60230124 T DE60230124 T DE 60230124T DE 60230124 D1 DE60230124 D1 DE 60230124D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- transistor gate
- increased power
- electron radiation
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/819,342 US6630288B2 (en) | 2001-03-28 | 2001-03-28 | Process for forming sub-lithographic photoresist features by modification of the photoresist surface |
US09/820,143 US6774365B2 (en) | 2001-03-28 | 2001-03-28 | SEM inspection and analysis of patterned photoresist features |
US09/819,344 US6653231B2 (en) | 2001-03-28 | 2001-03-28 | Process for reducing the critical dimensions of integrated circuit device features |
US09/819,552 US6815359B2 (en) | 2001-03-28 | 2001-03-28 | Process for improving the etch stability of ultra-thin photoresist |
US09/819,343 US6716571B2 (en) | 2001-03-28 | 2001-03-28 | Selective photoresist hardening to facilitate lateral trimming |
US09/819,692 US6589709B1 (en) | 2001-03-28 | 2001-03-28 | Process for preventing deformation of patterned photoresist features |
US10/017,855 US6828259B2 (en) | 2001-03-28 | 2001-12-14 | Enhanced transistor gate using E-beam radiation |
PCT/US2002/005640 WO2002078095A2 (en) | 2001-03-28 | 2002-02-22 | Method of forming enhanced transistor gate using e-beam radiation and integrated circuit including this transistor gate |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60230124D1 true DE60230124D1 (en) | 2009-01-15 |
Family
ID=40121781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60230124T Expired - Lifetime DE60230124D1 (en) | 2001-03-28 | 2002-02-22 | WITH INCREASED POWER BY ELECTRON RADIATION AND INTEGRATED CIRCUIT WITH THIS TRANSISTOR GATE |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE60230124D1 (en) |
-
2002
- 2002-02-22 DE DE60230124T patent/DE60230124D1/en not_active Expired - Lifetime
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: GLOBALFOUNDRIES, INC., GRAND CAYMANN, KY |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER, |