DE112005001434T5 - MOS gate-connected power semiconductor device with source field electrode - Google Patents

MOS gate-connected power semiconductor device with source field electrode Download PDF

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Publication number
DE112005001434T5
DE112005001434T5 DE112005001434T DE112005001434T DE112005001434T5 DE 112005001434 T5 DE112005001434 T5 DE 112005001434T5 DE 112005001434 T DE112005001434 T DE 112005001434T DE 112005001434 T DE112005001434 T DE 112005001434T DE 112005001434 T5 DE112005001434 T5 DE 112005001434T5
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DE
Germany
Prior art keywords
semiconductor device
power semiconductor
field electrode
connected power
source field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112005001434T
Other languages
German (de)
Other versions
DE112005001434B4 (en
Inventor
Jianjun Cao
Dave Kent
Paul Harvey
Ritu Sodhi
Daniel M Kinzer
Naresh Thapar
Andrew N Sawle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
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Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of DE112005001434T5 publication Critical patent/DE112005001434T5/en
Application granted granted Critical
Publication of DE112005001434B4 publication Critical patent/DE112005001434B4/en
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
DE112005001434.7T 2004-06-25 2005-06-27 MOS gate-connected power semiconductor device with source field electrode Active DE112005001434B4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US58289804P 2004-06-25 2004-06-25
US60/582,898 2004-06-25
PCT/US2005/022917 WO2006004746A2 (en) 2004-06-25 2005-06-27 Mosgated power semiconductor device with source field electrode

Publications (2)

Publication Number Publication Date
DE112005001434T5 true DE112005001434T5 (en) 2007-05-16
DE112005001434B4 DE112005001434B4 (en) 2018-06-07

Family

ID=35783318

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112005001434.7T Active DE112005001434B4 (en) 2004-06-25 2005-06-27 MOS gate-connected power semiconductor device with source field electrode

Country Status (3)

Country Link
JP (1) JP2008504697A (en)
DE (1) DE112005001434B4 (en)
WO (1) WO2006004746A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008051259B4 (en) * 2007-10-10 2015-10-15 Infineon Technologies Ag Power semiconductor component and method for producing a power semiconductor component
EP3200236A4 (en) * 2014-09-24 2018-05-23 Shindengen Electric Manufacturing Co., Ltd. Silicon carbide semiconductor device, method for manufacturing silicon carbide semiconductor device, and method for designing silicon carbide semiconductor device
IT201700057056A1 (en) * 2017-05-25 2018-11-25 St Microelectronics Srl SELF-ALIGNED MANUFACTURING METHOD OF A VDMOS TRANSISTOR, AND AUTO-LINKED VDMOS TRANSISTOR

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006007096B4 (en) * 2006-02-15 2008-07-17 Infineon Technologies Austria Ag Compensating structure and edge termination MOSFET and method of making the same
US7381618B2 (en) * 2006-10-03 2008-06-03 Power Integrations, Inc. Gate etch process for a high-voltage FET
DE102009014418B3 (en) * 2009-03-26 2010-04-15 Heraeus Quarzglas Gmbh & Co. Kg Drawing method for the production of cylindrical components made of quartz glass
JP5627494B2 (en) * 2011-02-09 2014-11-19 株式会社東芝 Semiconductor device and manufacturing method thereof
JP2012204529A (en) * 2011-03-24 2012-10-22 Toshiba Corp Semiconductor device and method of manufacturing the same
JP2012204590A (en) * 2011-03-25 2012-10-22 Toshiba Corp Semiconductor device and method of manufacturing the same
JP6426642B2 (en) * 2016-03-08 2018-11-21 株式会社東芝 Semiconductor device
CN107910268B (en) * 2017-11-17 2023-12-26 杭州士兰集昕微电子有限公司 Power semiconductor device and method of manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326711A (en) * 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
US5998833A (en) 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
DE10038177A1 (en) * 2000-08-04 2002-02-21 Infineon Technologies Ag Semiconductor switching element with two control electrodes which can be controlled by means of a field effect
US6649975B2 (en) 2000-11-16 2003-11-18 Silicon Semiconductor Corporation Vertical power devices having trench-based electrodes therein
JP3709814B2 (en) * 2001-01-24 2005-10-26 株式会社豊田中央研究所 Semiconductor device and manufacturing method thereof
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US7012301B2 (en) * 2001-12-18 2006-03-14 Fuji Electric Co., Ltd. Trench lateral power MOSFET and a method of manufacturing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008051259B4 (en) * 2007-10-10 2015-10-15 Infineon Technologies Ag Power semiconductor component and method for producing a power semiconductor component
EP3200236A4 (en) * 2014-09-24 2018-05-23 Shindengen Electric Manufacturing Co., Ltd. Silicon carbide semiconductor device, method for manufacturing silicon carbide semiconductor device, and method for designing silicon carbide semiconductor device
IT201700057056A1 (en) * 2017-05-25 2018-11-25 St Microelectronics Srl SELF-ALIGNED MANUFACTURING METHOD OF A VDMOS TRANSISTOR, AND AUTO-LINKED VDMOS TRANSISTOR
US10510849B2 (en) 2017-05-25 2019-12-17 Stmicroelectronics S.R.L. Method for auto-aligned manufacturing of a VDMOS transistor, and auto-aligned VDMOS transistor
US10770558B2 (en) 2017-05-25 2020-09-08 Stmicroelectronics S.R.L. Method for auto-aligned manufacturing of a VDMOS transistor, and auto-aligned VDMOS transistor
US11038032B2 (en) 2017-05-25 2021-06-15 Stmicroelectronics S.R.L. Method for auto-aligned manufacturing of a VDMOS transistor, and auto-aligned VDMOS transistor
US11705493B2 (en) 2017-05-25 2023-07-18 Stmicroelectronics S.R.L. Method for auto-aligned manufacturing of a VDMOS transistor, and auto-aligned VDMOS transistor

Also Published As

Publication number Publication date
WO2006004746A3 (en) 2006-02-16
JP2008504697A (en) 2008-02-14
DE112005001434B4 (en) 2018-06-07
WO2006004746A2 (en) 2006-01-12

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Ipc: H01L 29/78 AFI20070212BHDE

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Representative=s name: LAMBSDORFF & LANGE PATENTANWAELTE PARTNERSCHAF, DE

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R081 Change of applicant/patentee

Owner name: INFINEON TECHNOLOGIES AMERICAS CORP., EL SEGUN, US

Free format text: FORMER OWNER: INTERNATIONAL RECTIFIER CORPORATION, EL SEGUNDO, CALIF., US

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R020 Patent grant now final
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