DE60217976D1 - Bordotierte diamant und verfahren zu ihrer herstellung - Google Patents

Bordotierte diamant und verfahren zu ihrer herstellung

Info

Publication number
DE60217976D1
DE60217976D1 DE60217976T DE60217976T DE60217976D1 DE 60217976 D1 DE60217976 D1 DE 60217976D1 DE 60217976 T DE60217976 T DE 60217976T DE 60217976 T DE60217976 T DE 60217976T DE 60217976 D1 DE60217976 D1 DE 60217976D1
Authority
DE
Germany
Prior art keywords
bordoted
diamond
production
layer
exceeding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60217976T
Other languages
English (en)
Other versions
DE60217976T2 (de
Inventor
Geoffrey Alan Scarsbrook
Philip Maurice Martineau
Daniel James Twitchen
Andrew John Whitehead
Michael Andrew Cooper
Baerbel Susanne Charlotte Dorn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Element Six Ltd
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Application granted granted Critical
Publication of DE60217976D1 publication Critical patent/DE60217976D1/de
Publication of DE60217976T2 publication Critical patent/DE60217976T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Respiratory Apparatuses And Protective Means (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
DE60217976T 2001-12-14 2002-12-13 Bordotierte diamant und verfahren zu ihrer herstellung Expired - Lifetime DE60217976T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0130005 2001-12-14
GBGB0130005.2A GB0130005D0 (en) 2001-12-14 2001-12-14 Boron doped diamond
PCT/IB2002/005324 WO2003052174A2 (en) 2001-12-14 2002-12-13 Boron doped diamond

Publications (2)

Publication Number Publication Date
DE60217976D1 true DE60217976D1 (de) 2007-03-22
DE60217976T2 DE60217976T2 (de) 2007-05-24

Family

ID=9927671

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60217976T Expired - Lifetime DE60217976T2 (de) 2001-12-14 2002-12-13 Bordotierte diamant und verfahren zu ihrer herstellung

Country Status (16)

Country Link
US (2) US7160617B2 (de)
EP (2) EP1780315B1 (de)
JP (2) JP5101792B2 (de)
KR (1) KR100847969B1 (de)
CN (1) CN1321227C (de)
AT (1) ATE353108T1 (de)
AU (1) AU2002366413A1 (de)
CA (1) CA2469150C (de)
DE (1) DE60217976T2 (de)
ES (1) ES2279897T3 (de)
GB (2) GB0130005D0 (de)
HK (1) HK1076644A1 (de)
IL (2) IL162354A0 (de)
RU (1) RU2315826C2 (de)
WO (1) WO2003052174A2 (de)
ZA (1) ZA200404371B (de)

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ES2252244T3 (es) * 2000-06-15 2006-05-16 Element Six (Pty) Ltd Capa gruesa de diamante monocristalino, procedimiento de produccion y gemas producidas a partir de la capa.
DE10153310A1 (de) * 2001-10-29 2003-05-22 Infineon Technologies Ag Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB0130005D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
EP2253746B1 (de) * 2002-09-06 2015-07-22 Element Six Technologies Limited Gefärbter diamant
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
KR101240785B1 (ko) * 2003-12-12 2013-03-07 엘리멘트 식스 리미티드 화학적 증착 다이아몬드에 마크를 통합시키는 방법
CA2548449C (en) * 2003-12-12 2014-06-03 Element Six Limited Method of incorporating a mark in cvd diamond
US7309446B1 (en) * 2004-02-25 2007-12-18 Metadigm Llc Methods of manufacturing diamond capsules
US20100297391A1 (en) * 2004-02-25 2010-11-25 General Nanotechnoloy Llc Diamond capsules and methods of manufacture
US9470485B1 (en) 2004-03-29 2016-10-18 Victor B. Kley Molded plastic cartridge with extended flash tube, sub-sonic cartridges, and user identification for firearms and site sensing fire control
GB0508889D0 (en) * 2005-04-29 2005-06-08 Element Six Ltd Diamond transistor and method of manufacture thereof
EP2400533B1 (de) * 2005-06-20 2019-05-15 Nippon Telegraph And Telephone Corporation Diamant Halbleiterbauelement und Verfahren zur Herstellung
JP5457028B2 (ja) * 2005-06-22 2014-04-02 エレメント シックス リミテッド ハイカラーのダイヤモンド層
GB0512728D0 (en) * 2005-06-22 2005-07-27 Element Six Ltd High colour diamond
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US20090127565A1 (en) * 2005-08-09 2009-05-21 Chien-Min Sung P-n junctions on mosaic diamond substrates
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EP1957689B1 (de) * 2005-12-09 2011-04-20 Element Six Technologies (PTY) LTD Synthetischer diamant mit hoher kristalliner qualität
CN100390316C (zh) * 2006-01-19 2008-05-28 上海电机学院 n型CVD共掺杂金刚石薄膜的制备方法
EP2064368B1 (de) * 2006-09-05 2017-05-31 Element Six Technologies Limited Massive diamantelektrode
US7833581B2 (en) * 2006-09-11 2010-11-16 The Hong Kong University Of Science And Technology Method for making a highly stable diamond film on a substrate
GB0622483D0 (en) 2006-11-10 2006-12-20 Element Six Ltd Electrochemical apparatus having a forced flow arrangement
GB0622482D0 (en) 2006-11-10 2006-12-20 Element Six Ltd Diamond electrode
GB0700984D0 (en) 2007-01-18 2007-02-28 Element Six Ltd Polycrystalline diamond elements having convex surfaces
US9034200B2 (en) 2007-01-22 2015-05-19 Element Six Limited Technologies Limited Plasma etching of diamond surfaces
US20110031213A1 (en) * 2007-07-27 2011-02-10 Yuri Konstantinovich Nizienko Method for Marking Valuable Articles
US20090260396A1 (en) * 2008-04-16 2009-10-22 Eitan Broukman Methods for processing ornamental diamonds and corresponding ornamental diamonds
CN102084492B (zh) * 2008-05-05 2013-09-11 华盛顿***研究所 超韧单晶掺硼金刚石
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
US20100126406A1 (en) * 2008-11-25 2010-05-27 Yan Chih-Shiue Production of Single Crystal CVD Diamond at Rapid Growth Rate
RU2540624C2 (ru) * 2009-06-26 2015-02-10 Элемент Сикс Лимитед Способ получения фантазийного бледно-синего или фантазийного бледного сине-зеленого монокристаллического cvd-алмаза и полученный продукт
US8986646B2 (en) * 2009-06-26 2015-03-24 Element Six Technologies Limited Diamond material
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
US8997900B2 (en) 2010-12-15 2015-04-07 National Oilwell DHT, L.P. In-situ boron doped PDC element
JP5913362B2 (ja) * 2010-12-23 2016-04-27 エレメント シックス リミテッド 合成ダイヤモンド材料のドーピングの制御
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201104579D0 (en) * 2011-03-18 2011-05-04 Element Six Ltd Diamond based electrochemical sensors
GB201121642D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
GB201216697D0 (en) 2012-09-19 2012-10-31 Element Six Ltd Single crystal chemical vapour deposited synthetic diamond materials having uniform colour
US9921017B1 (en) 2013-03-15 2018-03-20 Victor B. Kley User identification for weapons and site sensing fire control
CN103938182B (zh) * 2014-04-08 2016-05-04 上海交通大学 硼氮共掺纳米基定向金刚石薄膜的制备方法
US10487395B2 (en) 2014-06-25 2019-11-26 Sumitomo Electric Industries, Ltd. Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate
JP6636239B2 (ja) * 2014-08-29 2020-01-29 国立大学法人電気通信大学 単結晶ダイヤモンドの製造方法、単結晶ダイヤモンド、単結晶ダイヤモンド基板の製造方法、単結晶ダイヤモンド基板及び半導体デバイス
EP3214208B1 (de) * 2014-10-29 2021-08-04 Sumitomo Electric Industries, Ltd. Einkristallines diamantmaterial und werkzeug, strahlungstemperaturmonitor und infrarot- und optische komponente mit besagtem diamantmaterial
JP2017010967A (ja) * 2015-06-16 2017-01-12 株式会社Flosfia 成膜方法
KR20170027112A (ko) 2015-09-01 2017-03-09 장상구 3차원 기공성 나노 다이아몬드를 담체로 하는 촉매의 제조방법
GB201516814D0 (en) 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds
EP3386924B1 (de) 2016-02-05 2019-08-28 Siemens Energy, Inc. Elektrooxidation bei erhöhten drücken
GB201620413D0 (en) 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
WO2019059123A1 (ja) * 2017-09-19 2019-03-28 住友電気工業株式会社 単結晶ダイヤモンドおよびその製造方法
US20230344660A1 (en) * 2022-04-20 2023-10-26 EllansaLabs Inc. System and Method for Etching Internal Surfaces of Transparent Gemstones with Information Pertaining to a Blockchain
CN114941173B (zh) * 2022-05-26 2023-10-10 曲阜师范大学 一种高相干金刚石氮空穴及金刚石压砧的制备与应用
CN115261984A (zh) * 2022-09-29 2022-11-01 北京芯美达科技有限公司 一种单晶金刚石晶格外延补偿方法

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ES2252244T3 (es) * 2000-06-15 2006-05-16 Element Six (Pty) Ltd Capa gruesa de diamante monocristalino, procedimiento de produccion y gemas producidas a partir de la capa.
GB0130005D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
EP2253746B1 (de) * 2002-09-06 2015-07-22 Element Six Technologies Limited Gefärbter diamant
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material

Also Published As

Publication number Publication date
JP2010222252A (ja) 2010-10-07
US20070092647A1 (en) 2007-04-26
HK1076644A1 (en) 2006-01-20
GB0415787D0 (en) 2004-08-18
IL162354A0 (en) 2005-11-20
EP1780315A2 (de) 2007-05-02
ES2279897T3 (es) 2007-09-01
WO2003052174A2 (en) 2003-06-26
KR20040077674A (ko) 2004-09-06
EP1463849B1 (de) 2007-01-31
GB2400116B (en) 2005-06-22
DE60217976T2 (de) 2007-05-24
ATE353108T1 (de) 2007-02-15
KR100847969B1 (ko) 2008-07-22
JP2005512928A (ja) 2005-05-12
CN1321227C (zh) 2007-06-13
EP1463849A2 (de) 2004-10-06
US20040180205A1 (en) 2004-09-16
CA2469150C (en) 2009-09-15
IL162354A (en) 2009-09-22
RU2315826C2 (ru) 2008-01-27
WO2003052174A3 (en) 2003-10-02
US7160617B2 (en) 2007-01-09
EP1780315B1 (de) 2015-04-15
AU2002366413A1 (en) 2003-06-30
ZA200404371B (en) 2005-06-03
EP1780315A3 (de) 2010-02-24
CA2469150A1 (en) 2003-06-26
GB2400116A (en) 2004-10-06
GB0130005D0 (en) 2002-02-06
CN1612955A (zh) 2005-05-04
RU2004121782A (ru) 2005-06-10
JP5101792B2 (ja) 2012-12-19

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