DE60217976D1 - Bordotierte diamant und verfahren zu ihrer herstellung - Google Patents
Bordotierte diamant und verfahren zu ihrer herstellungInfo
- Publication number
- DE60217976D1 DE60217976D1 DE60217976T DE60217976T DE60217976D1 DE 60217976 D1 DE60217976 D1 DE 60217976D1 DE 60217976 T DE60217976 T DE 60217976T DE 60217976 T DE60217976 T DE 60217976T DE 60217976 D1 DE60217976 D1 DE 60217976D1
- Authority
- DE
- Germany
- Prior art keywords
- bordoted
- diamond
- production
- layer
- exceeding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Respiratory Apparatuses And Protective Means (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0130005 | 2001-12-14 | ||
GBGB0130005.2A GB0130005D0 (en) | 2001-12-14 | 2001-12-14 | Boron doped diamond |
PCT/IB2002/005324 WO2003052174A2 (en) | 2001-12-14 | 2002-12-13 | Boron doped diamond |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60217976D1 true DE60217976D1 (de) | 2007-03-22 |
DE60217976T2 DE60217976T2 (de) | 2007-05-24 |
Family
ID=9927671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60217976T Expired - Lifetime DE60217976T2 (de) | 2001-12-14 | 2002-12-13 | Bordotierte diamant und verfahren zu ihrer herstellung |
Country Status (16)
Country | Link |
---|---|
US (2) | US7160617B2 (de) |
EP (2) | EP1780315B1 (de) |
JP (2) | JP5101792B2 (de) |
KR (1) | KR100847969B1 (de) |
CN (1) | CN1321227C (de) |
AT (1) | ATE353108T1 (de) |
AU (1) | AU2002366413A1 (de) |
CA (1) | CA2469150C (de) |
DE (1) | DE60217976T2 (de) |
ES (1) | ES2279897T3 (de) |
GB (2) | GB0130005D0 (de) |
HK (1) | HK1076644A1 (de) |
IL (2) | IL162354A0 (de) |
RU (1) | RU2315826C2 (de) |
WO (1) | WO2003052174A2 (de) |
ZA (1) | ZA200404371B (de) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2288302C2 (ru) | 2000-06-15 | 2006-11-27 | Элемент Сикс (Пти) Лтд. | Монокристаллический алмаз, полученный методом химического осаждения из газовой фазы, и способ его получения |
ES2252244T3 (es) * | 2000-06-15 | 2006-05-16 | Element Six (Pty) Ltd | Capa gruesa de diamante monocristalino, procedimiento de produccion y gemas producidas a partir de la capa. |
DE10153310A1 (de) * | 2001-10-29 | 2003-05-22 | Infineon Technologies Ag | Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte |
GB0130004D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Coloured diamond |
GB0130005D0 (en) | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
EP2253746B1 (de) * | 2002-09-06 | 2015-07-22 | Element Six Technologies Limited | Gefärbter diamant |
GB0221949D0 (en) * | 2002-09-20 | 2002-10-30 | Diamanx Products Ltd | Single crystal diamond |
GB0227261D0 (en) | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
KR101240785B1 (ko) * | 2003-12-12 | 2013-03-07 | 엘리멘트 식스 리미티드 | 화학적 증착 다이아몬드에 마크를 통합시키는 방법 |
CA2548449C (en) * | 2003-12-12 | 2014-06-03 | Element Six Limited | Method of incorporating a mark in cvd diamond |
US7309446B1 (en) * | 2004-02-25 | 2007-12-18 | Metadigm Llc | Methods of manufacturing diamond capsules |
US20100297391A1 (en) * | 2004-02-25 | 2010-11-25 | General Nanotechnoloy Llc | Diamond capsules and methods of manufacture |
US9470485B1 (en) | 2004-03-29 | 2016-10-18 | Victor B. Kley | Molded plastic cartridge with extended flash tube, sub-sonic cartridges, and user identification for firearms and site sensing fire control |
GB0508889D0 (en) * | 2005-04-29 | 2005-06-08 | Element Six Ltd | Diamond transistor and method of manufacture thereof |
EP2400533B1 (de) * | 2005-06-20 | 2019-05-15 | Nippon Telegraph And Telephone Corporation | Diamant Halbleiterbauelement und Verfahren zur Herstellung |
JP5457028B2 (ja) * | 2005-06-22 | 2014-04-02 | エレメント シックス リミテッド | ハイカラーのダイヤモンド層 |
GB0512728D0 (en) * | 2005-06-22 | 2005-07-27 | Element Six Ltd | High colour diamond |
GB0513932D0 (en) | 2005-07-08 | 2005-08-17 | Element Six Ltd | Single crystal diamond elements having spherical surfaces |
US20090127565A1 (en) * | 2005-08-09 | 2009-05-21 | Chien-Min Sung | P-n junctions on mosaic diamond substrates |
US20070036896A1 (en) * | 2005-08-09 | 2007-02-15 | Chien-Min Sung | Mosaic diamond substrates |
EP1957689B1 (de) * | 2005-12-09 | 2011-04-20 | Element Six Technologies (PTY) LTD | Synthetischer diamant mit hoher kristalliner qualität |
CN100390316C (zh) * | 2006-01-19 | 2008-05-28 | 上海电机学院 | n型CVD共掺杂金刚石薄膜的制备方法 |
EP2064368B1 (de) * | 2006-09-05 | 2017-05-31 | Element Six Technologies Limited | Massive diamantelektrode |
US7833581B2 (en) * | 2006-09-11 | 2010-11-16 | The Hong Kong University Of Science And Technology | Method for making a highly stable diamond film on a substrate |
GB0622483D0 (en) | 2006-11-10 | 2006-12-20 | Element Six Ltd | Electrochemical apparatus having a forced flow arrangement |
GB0622482D0 (en) | 2006-11-10 | 2006-12-20 | Element Six Ltd | Diamond electrode |
GB0700984D0 (en) | 2007-01-18 | 2007-02-28 | Element Six Ltd | Polycrystalline diamond elements having convex surfaces |
US9034200B2 (en) | 2007-01-22 | 2015-05-19 | Element Six Limited Technologies Limited | Plasma etching of diamond surfaces |
US20110031213A1 (en) * | 2007-07-27 | 2011-02-10 | Yuri Konstantinovich Nizienko | Method for Marking Valuable Articles |
US20090260396A1 (en) * | 2008-04-16 | 2009-10-22 | Eitan Broukman | Methods for processing ornamental diamonds and corresponding ornamental diamonds |
CN102084492B (zh) * | 2008-05-05 | 2013-09-11 | 华盛顿***研究所 | 超韧单晶掺硼金刚石 |
GB0813490D0 (en) * | 2008-07-23 | 2008-08-27 | Element Six Ltd | Solid state material |
GB0813491D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Diamond Material |
US20100126406A1 (en) * | 2008-11-25 | 2010-05-27 | Yan Chih-Shiue | Production of Single Crystal CVD Diamond at Rapid Growth Rate |
RU2540624C2 (ru) * | 2009-06-26 | 2015-02-10 | Элемент Сикс Лимитед | Способ получения фантазийного бледно-синего или фантазийного бледного сине-зеленого монокристаллического cvd-алмаза и полученный продукт |
US8986646B2 (en) * | 2009-06-26 | 2015-03-24 | Element Six Technologies Limited | Diamond material |
SG179318A1 (en) * | 2010-09-27 | 2012-04-27 | Gemesis Company S Pte Ltd | Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system |
US8997900B2 (en) | 2010-12-15 | 2015-04-07 | National Oilwell DHT, L.P. | In-situ boron doped PDC element |
JP5913362B2 (ja) * | 2010-12-23 | 2016-04-27 | エレメント シックス リミテッド | 合成ダイヤモンド材料のドーピングの制御 |
GB201021913D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave plasma reactors and substrates for synthetic diamond manufacture |
GB201021855D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave power delivery system for plasma reactors |
GB201021865D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021853D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021860D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for diamond synthesis |
GB201021870D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201104579D0 (en) * | 2011-03-18 | 2011-05-04 | Element Six Ltd | Diamond based electrochemical sensors |
GB201121642D0 (en) | 2011-12-16 | 2012-01-25 | Element Six Ltd | Single crtstal cvd synthetic diamond material |
GB201216697D0 (en) | 2012-09-19 | 2012-10-31 | Element Six Ltd | Single crystal chemical vapour deposited synthetic diamond materials having uniform colour |
US9921017B1 (en) | 2013-03-15 | 2018-03-20 | Victor B. Kley | User identification for weapons and site sensing fire control |
CN103938182B (zh) * | 2014-04-08 | 2016-05-04 | 上海交通大学 | 硼氮共掺纳米基定向金刚石薄膜的制备方法 |
US10487395B2 (en) | 2014-06-25 | 2019-11-26 | Sumitomo Electric Industries, Ltd. | Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate |
JP6636239B2 (ja) * | 2014-08-29 | 2020-01-29 | 国立大学法人電気通信大学 | 単結晶ダイヤモンドの製造方法、単結晶ダイヤモンド、単結晶ダイヤモンド基板の製造方法、単結晶ダイヤモンド基板及び半導体デバイス |
EP3214208B1 (de) * | 2014-10-29 | 2021-08-04 | Sumitomo Electric Industries, Ltd. | Einkristallines diamantmaterial und werkzeug, strahlungstemperaturmonitor und infrarot- und optische komponente mit besagtem diamantmaterial |
JP2017010967A (ja) * | 2015-06-16 | 2017-01-12 | 株式会社Flosfia | 成膜方法 |
KR20170027112A (ko) | 2015-09-01 | 2017-03-09 | 장상구 | 3차원 기공성 나노 다이아몬드를 담체로 하는 촉매의 제조방법 |
GB201516814D0 (en) | 2015-09-23 | 2015-11-04 | Element Six Technologies Ltd | Method of fabricating a plurality of single crystal CVD synthetic diamonds |
EP3386924B1 (de) | 2016-02-05 | 2019-08-28 | Siemens Energy, Inc. | Elektrooxidation bei erhöhten drücken |
GB201620413D0 (en) | 2016-12-01 | 2017-01-18 | Element Six Tech Ltd | Single crystal synthetic diamond material via chemical vapour deposition |
WO2019059123A1 (ja) * | 2017-09-19 | 2019-03-28 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよびその製造方法 |
US20230344660A1 (en) * | 2022-04-20 | 2023-10-26 | EllansaLabs Inc. | System and Method for Etching Internal Surfaces of Transparent Gemstones with Information Pertaining to a Blockchain |
CN114941173B (zh) * | 2022-05-26 | 2023-10-10 | 曲阜师范大学 | 一种高相干金刚石氮空穴及金刚石压砧的制备与应用 |
CN115261984A (zh) * | 2022-09-29 | 2022-11-01 | 北京芯美达科技有限公司 | 一种单晶金刚石晶格外延补偿方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8810111D0 (en) * | 1988-04-28 | 1988-06-02 | Jones B L | Diamond growth |
JP2730144B2 (ja) * | 1989-03-07 | 1998-03-25 | 住友電気工業株式会社 | 単結晶ダイヤモンド層形成法 |
JP2730145B2 (ja) * | 1989-03-07 | 1998-03-25 | 住友電気工業株式会社 | 単結晶ダイヤモンド層の形成法 |
JP2695000B2 (ja) * | 1989-04-11 | 1997-12-24 | 住友電気工業株式会社 | サーミスタ及びその製造方法 |
EP0445754B1 (de) * | 1990-03-06 | 1996-02-14 | Sumitomo Electric Industries, Ltd. | Verfahren zum Aufwachsen einer Dünnschicht aus Diamant oder c-BN |
DE4007057A1 (de) * | 1990-03-07 | 1991-09-12 | Starck Hermann C Fa | Kobaltgebundene diamantwerkzeuge, verfahren zu ihrerherstellung sowie deren verwendung |
US5381755A (en) * | 1991-08-20 | 1995-01-17 | The United States Of America As Represented By The Secretary Of The Navy | Method of synthesizing high quality, doped diamond and diamonds and devices obtained therefrom |
US5614019A (en) * | 1992-06-08 | 1997-03-25 | Air Products And Chemicals, Inc. | Method for the growth of industrial crystals |
US5443032A (en) * | 1992-06-08 | 1995-08-22 | Air Products And Chemicals, Inc. | Method for the manufacture of large single crystals |
NL9201987A (nl) * | 1992-11-13 | 1994-06-01 | Stichting Katholieke Univ | Werkwijze voor het vervaardigen van een eenkristallijne diamant. |
JPH06183893A (ja) * | 1992-12-16 | 1994-07-05 | Sumitomo Electric Ind Ltd | ダイヤモンド基板のクリーニング方法 |
JPH06345592A (ja) * | 1993-06-10 | 1994-12-20 | Kobe Steel Ltd | ダイヤモンド薄膜の形成方法 |
JP3484749B2 (ja) * | 1994-04-04 | 2004-01-06 | 住友電気工業株式会社 | ダイヤモンドの合成法 |
JP4291886B2 (ja) * | 1994-12-05 | 2009-07-08 | 住友電気工業株式会社 | 低欠陥ダイヤモンド単結晶及びその合成方法 |
US5635258A (en) * | 1995-04-03 | 1997-06-03 | National Science Council | Method of forming a boron-doped diamond film by chemical vapor deposition |
GB9616043D0 (en) * | 1996-07-31 | 1996-09-11 | De Beers Ind Diamond | Diamond |
GB9617458D0 (en) * | 1996-08-20 | 1996-10-02 | Turner Dev Ltd | Improvements in wood chipping machines |
JP4114709B2 (ja) * | 1996-09-05 | 2008-07-09 | 株式会社神戸製鋼所 | ダイヤモンド膜の形成方法 |
JP4032482B2 (ja) * | 1997-04-18 | 2008-01-16 | 住友電気工業株式会社 | 単結晶ダイヤモンドの製造方法 |
JPH11236292A (ja) * | 1998-02-25 | 1999-08-31 | Namiki Precision Jewel Co Ltd | ダイヤモンドのプラズマエッチング加工方法 |
US6582513B1 (en) * | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
RU2288302C2 (ru) * | 2000-06-15 | 2006-11-27 | Элемент Сикс (Пти) Лтд. | Монокристаллический алмаз, полученный методом химического осаждения из газовой фазы, и способ его получения |
ES2252244T3 (es) * | 2000-06-15 | 2006-05-16 | Element Six (Pty) Ltd | Capa gruesa de diamante monocristalino, procedimiento de produccion y gemas producidas a partir de la capa. |
GB0130005D0 (en) | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
GB0130004D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Coloured diamond |
EP2253746B1 (de) * | 2002-09-06 | 2015-07-22 | Element Six Technologies Limited | Gefärbter diamant |
GB0221949D0 (en) * | 2002-09-20 | 2002-10-30 | Diamanx Products Ltd | Single crystal diamond |
GB0227261D0 (en) * | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
-
2001
- 2001-12-14 GB GBGB0130005.2A patent/GB0130005D0/en not_active Ceased
-
2002
- 2002-12-13 AT AT02790571T patent/ATE353108T1/de not_active IP Right Cessation
- 2002-12-13 GB GB0415787A patent/GB2400116B/en not_active Expired - Lifetime
- 2002-12-13 IL IL16235402A patent/IL162354A0/xx unknown
- 2002-12-13 DE DE60217976T patent/DE60217976T2/de not_active Expired - Lifetime
- 2002-12-13 CN CNB028267494A patent/CN1321227C/zh not_active Expired - Lifetime
- 2002-12-13 JP JP2003553040A patent/JP5101792B2/ja not_active Expired - Lifetime
- 2002-12-13 EP EP06076850.4A patent/EP1780315B1/de not_active Expired - Lifetime
- 2002-12-13 WO PCT/IB2002/005324 patent/WO2003052174A2/en active IP Right Grant
- 2002-12-13 AU AU2002366413A patent/AU2002366413A1/en not_active Abandoned
- 2002-12-13 ES ES02790571T patent/ES2279897T3/es not_active Expired - Lifetime
- 2002-12-13 KR KR1020047009241A patent/KR100847969B1/ko active IP Right Grant
- 2002-12-13 EP EP02790571A patent/EP1463849B1/de not_active Expired - Lifetime
- 2002-12-13 CA CA002469150A patent/CA2469150C/en not_active Expired - Lifetime
- 2002-12-13 RU RU2004121782/15A patent/RU2315826C2/ru active
-
2003
- 2003-09-03 US US10/653,419 patent/US7160617B2/en not_active Expired - Lifetime
-
2004
- 2004-06-03 ZA ZA200404371A patent/ZA200404371B/en unknown
- 2004-06-03 IL IL162354A patent/IL162354A/en active IP Right Grant
-
2005
- 2005-09-29 HK HK05108599A patent/HK1076644A1/xx not_active IP Right Cessation
-
2006
- 2006-12-01 US US11/565,753 patent/US20070092647A1/en not_active Abandoned
-
2010
- 2010-06-14 JP JP2010134951A patent/JP2010222252A/ja not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2010222252A (ja) | 2010-10-07 |
US20070092647A1 (en) | 2007-04-26 |
HK1076644A1 (en) | 2006-01-20 |
GB0415787D0 (en) | 2004-08-18 |
IL162354A0 (en) | 2005-11-20 |
EP1780315A2 (de) | 2007-05-02 |
ES2279897T3 (es) | 2007-09-01 |
WO2003052174A2 (en) | 2003-06-26 |
KR20040077674A (ko) | 2004-09-06 |
EP1463849B1 (de) | 2007-01-31 |
GB2400116B (en) | 2005-06-22 |
DE60217976T2 (de) | 2007-05-24 |
ATE353108T1 (de) | 2007-02-15 |
KR100847969B1 (ko) | 2008-07-22 |
JP2005512928A (ja) | 2005-05-12 |
CN1321227C (zh) | 2007-06-13 |
EP1463849A2 (de) | 2004-10-06 |
US20040180205A1 (en) | 2004-09-16 |
CA2469150C (en) | 2009-09-15 |
IL162354A (en) | 2009-09-22 |
RU2315826C2 (ru) | 2008-01-27 |
WO2003052174A3 (en) | 2003-10-02 |
US7160617B2 (en) | 2007-01-09 |
EP1780315B1 (de) | 2015-04-15 |
AU2002366413A1 (en) | 2003-06-30 |
ZA200404371B (en) | 2005-06-03 |
EP1780315A3 (de) | 2010-02-24 |
CA2469150A1 (en) | 2003-06-26 |
GB2400116A (en) | 2004-10-06 |
GB0130005D0 (en) | 2002-02-06 |
CN1612955A (zh) | 2005-05-04 |
RU2004121782A (ru) | 2005-06-10 |
JP5101792B2 (ja) | 2012-12-19 |
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