DE60217067D1 - Herstellungsverfahren für beschleunigungsmesser, der durch auf dem wafer-massstab angebrachte kappen geschützt wird - Google Patents

Herstellungsverfahren für beschleunigungsmesser, der durch auf dem wafer-massstab angebrachte kappen geschützt wird

Info

Publication number
DE60217067D1
DE60217067D1 DE60217067T DE60217067T DE60217067D1 DE 60217067 D1 DE60217067 D1 DE 60217067D1 DE 60217067 T DE60217067 T DE 60217067T DE 60217067 T DE60217067 T DE 60217067T DE 60217067 D1 DE60217067 D1 DE 60217067D1
Authority
DE
Germany
Prior art keywords
knives
accelerating
protected
production method
wafer scale
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60217067T
Other languages
English (en)
Inventor
Kia Silverbrook
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silverbrook Research Pty Ltd
Original Assignee
Silverbrook Research Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silverbrook Research Pty Ltd filed Critical Silverbrook Research Pty Ltd
Application granted granted Critical
Publication of DE60217067D1 publication Critical patent/DE60217067D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/315Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/36Moulds for making articles of definite length, i.e. discrete articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • B81C1/00269Bonding of solid lids or wafers to the substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • B81C1/00333Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865Multistep processes for the separation of wafers into individual elements
    • B81C1/00904Multistep processes for the separation of wafers into individual elements not provided for in groups B81C1/00873 - B81C1/00896
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00Details of instruments
    • G01P1/02Housings
    • G01P1/023Housings for acceleration measuring devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0822Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using IR radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/50Removing moulded articles
    • B29C2043/503Removing moulded articles using ejector pins, rods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/0022Multi-cavity moulds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0228Inertial sensors
    • B81B2201/0235Accelerometers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00Microstructural systems or auxiliary parts thereof
    • B81B2207/05Arrays
    • B81B2207/056Arrays of static structures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/03Processes for manufacturing substrate-free structures
    • B81C2201/034Moulding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/01Packaging MEMS
    • B81C2203/0127Using a carrier for applying a plurality of packaging lids to the system wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/162Disposition
    • H01L2924/16235Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
DE60217067T 2001-01-10 2002-01-08 Herstellungsverfahren für beschleunigungsmesser, der durch auf dem wafer-massstab angebrachte kappen geschützt wird Expired - Fee Related DE60217067D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPR2453A AUPR245301A0 (en) 2001-01-10 2001-01-10 An apparatus (WSM06)
PCT/AU2002/000013 WO2002056031A1 (en) 2001-01-10 2002-01-08 Accelerometer protected by caps applied at the wafer scale

Publications (1)

Publication Number Publication Date
DE60217067D1 true DE60217067D1 (de) 2007-02-08

Family

ID=3826488

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60217067T Expired - Fee Related DE60217067D1 (de) 2001-01-10 2002-01-08 Herstellungsverfahren für beschleunigungsmesser, der durch auf dem wafer-massstab angebrachte kappen geschützt wird

Country Status (7)

Country Link
US (4) US6777259B2 (de)
EP (1) EP1358489B1 (de)
JP (1) JP2004525357A (de)
AT (2) ATE349704T1 (de)
AU (1) AUPR245301A0 (de)
DE (1) DE60217067D1 (de)
WO (1) WO2002056031A1 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7090325B2 (en) * 2001-09-06 2006-08-15 Ricoh Company, Ltd. Liquid drop discharge head and manufacture method thereof, micro device ink-jet head ink cartridge and ink-jet printing device
US6989122B1 (en) * 2002-10-17 2006-01-24 National Semiconductor Corporation Techniques for manufacturing flash-free contacts on a semiconductor package
FR2849014B1 (fr) * 2002-12-20 2005-06-10 Commissariat Energie Atomique Microstruture encapsulee et procede de fabrication d'une telle microstructure
JP2005172543A (ja) * 2003-12-10 2005-06-30 Mitsubishi Electric Corp 加速度センサおよび加速度センサの製造方法
KR101335163B1 (ko) * 2004-03-15 2013-12-02 조지아 테크 리서치 코오포레이션 마이크로 전자-기계 시스템의 패키징 및 그 제조 방법
DE102004029586A1 (de) * 2004-06-18 2006-01-12 Infineon Technologies Ag Substratbasiertes Gehäusesbauelement mit einem Halbleiter-Chip
JP2006071432A (ja) * 2004-09-01 2006-03-16 Oki Electric Ind Co Ltd 加速度センサチップパッケージ及びその製造方法
US7337671B2 (en) 2005-06-03 2008-03-04 Georgia Tech Research Corp. Capacitive microaccelerometers and fabrication methods
JP2007048994A (ja) * 2005-08-11 2007-02-22 Akita Denshi Systems:Kk 半導体装置及びその製造方法
JPWO2007020701A1 (ja) * 2005-08-18 2009-02-19 株式会社シーアンドエヌ 加速度センサ装置
JP4984486B2 (ja) * 2005-10-20 2012-07-25 株式会社デンソー センサの製造方法
US7578189B1 (en) 2006-05-10 2009-08-25 Qualtre, Inc. Three-axis accelerometers
US7767484B2 (en) 2006-05-31 2010-08-03 Georgia Tech Research Corporation Method for sealing and backside releasing of microelectromechanical systems
WO2008006418A1 (de) * 2006-07-10 2008-01-17 Schott Ag Verfahren zur verpackung von bauelementen
JP2009063551A (ja) * 2007-09-10 2009-03-26 Rohm Co Ltd 半導体センサ装置
JP2009063550A (ja) * 2007-09-10 2009-03-26 Rohm Co Ltd 半導体センサ装置
US9289137B2 (en) 2007-09-28 2016-03-22 Volcano Corporation Intravascular pressure devices incorporating sensors manufactured using deep reactive ion etching
DE102007058951B4 (de) * 2007-12-07 2020-03-26 Snaptrack, Inc. MEMS Package
US20100013033A1 (en) * 2008-07-18 2010-01-21 Chia-Shing Chou Enablement of IC devices during assembly
FR2949453A1 (fr) * 2009-09-02 2011-03-04 Commissariat Energie Atomique Dispositif et procede d'encapsulation, microcapsule incorporant ce dispositif
JP2011128140A (ja) 2009-11-19 2011-06-30 Dainippon Printing Co Ltd センサデバイス及びその製造方法
JP5006429B2 (ja) * 2010-06-11 2012-08-22 トレックス・セミコンダクター株式会社 半導体センサー装置およびその製造方法
US9131325B2 (en) 2010-08-31 2015-09-08 Freescale Semiconductor, Inc. MEMS device assembly and method of packaging same
US8304275B2 (en) * 2010-08-31 2012-11-06 Freescale Semiconductor, Inc. MEMS device assembly and method of packaging same
US20120146452A1 (en) * 2010-12-10 2012-06-14 Miradia, Inc. Microelectromechanical system device and semi-manufacture and manufacturing method thereof
TWI409885B (zh) * 2011-05-16 2013-09-21 矽品精密工業股份有限公司 具微機電元件之封裝結構及其製法
TWI417973B (zh) * 2011-07-11 2013-12-01 矽品精密工業股份有限公司 具微機電元件之封裝結構之製法
US9040355B2 (en) 2012-07-11 2015-05-26 Freescale Semiconductor, Inc. Sensor package and method of forming same
US8709868B2 (en) 2012-08-23 2014-04-29 Freescale Semiconductor, Inc. Sensor packages and method of packaging dies of differing sizes
US8659167B1 (en) 2012-08-29 2014-02-25 Freescale Semiconductor, Inc. Sensor packaging method and sensor packages
US9099391B2 (en) * 2013-03-14 2015-08-04 Infineon Technologies Austria Ag Semiconductor package with top-side insulation layer
US10273147B2 (en) 2013-07-08 2019-04-30 Motion Engine Inc. MEMS components and method of wafer-level manufacturing thereof
WO2015003264A1 (en) 2013-07-08 2015-01-15 Motion Engine Inc. Mems device and method of manufacturing
WO2015013828A1 (en) 2013-08-02 2015-02-05 Motion Engine Inc. Mems motion sensor and method of manufacturing
WO2015103688A1 (en) 2014-01-09 2015-07-16 Motion Engine Inc. Integrated mems system
WO2015154173A1 (en) 2014-04-10 2015-10-15 Motion Engine Inc. Mems pressure sensor
US11674803B2 (en) 2014-06-02 2023-06-13 Motion Engine, Inc. Multi-mass MEMS motion sensor
JP6256301B2 (ja) * 2014-10-31 2018-01-10 株式会社デンソー 電子回路部品
CA3004760A1 (en) 2014-12-09 2016-06-16 Motion Engine Inc. 3d mems magnetometer and associated methods
WO2016112463A1 (en) 2015-01-15 2016-07-21 Motion Engine Inc. 3d mems device with hermetic cavity
KR20170069806A (ko) * 2015-12-11 2017-06-21 현대자동차주식회사 멤스센서의 제조방법
CN109485010A (zh) * 2018-12-06 2019-03-19 中芯长电半导体(江阴)有限公司 Mems封装结构、晶圆级mems封装结构及其制备方法
US11784103B2 (en) * 2020-12-09 2023-10-10 Texas Instruments Incorporated Covers for semiconductor package components

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US159218A (en) * 1875-01-26 Improvement in musical merchandise-boxes
AT314820B (de) * 1969-02-18 1974-04-25 Optipatent Ag Vorrichtung zum Füllen von Gießformen
FR2596569B1 (fr) * 1986-03-25 1988-05-20 Ceraver Dispositif de demoulage d'un isolateur electrique composite
DE69116435T2 (de) * 1990-05-30 1996-08-14 Hitachi Ltd Halbleiterbeschleunigungsmesser und Kraftfahrzeugsteuerungssystem mit einem solchen
JP2547894B2 (ja) * 1990-07-27 1996-10-23 株式会社東芝 半導体樹脂封止用金型機構
IL102556A (en) * 1991-08-16 1998-02-08 Johnson & Johnson Vision Prod Device and process for fusing detachable lens mold units
JPH06347475A (ja) * 1993-06-08 1994-12-22 Murata Mfg Co Ltd 加速度センサおよびその製造方法
IL107549A (en) * 1993-11-09 1996-01-31 Nova Measuring Instr Ltd Device for measuring the thickness of thin films
JPH07191055A (ja) * 1993-12-27 1995-07-28 Hitachi Ltd 静電容量式加速度センサ
US5508231A (en) * 1994-03-07 1996-04-16 National Semiconductor Corporation Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits
JPH08233848A (ja) * 1995-02-28 1996-09-13 Mitsubishi Electric Corp 半導体センサ
CA2217369A1 (en) * 1995-04-10 1996-10-17 Johannes A.S. Bjorner Two-camera system for locating and storing indicia on conveyed items
JPH08304447A (ja) * 1995-05-02 1996-11-22 Mitsubishi Electric Corp 半導体加速度センサおよびその製造方法
JP3613838B2 (ja) * 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
JP3496347B2 (ja) * 1995-07-13 2004-02-09 株式会社デンソー 半導体装置及びその製造方法
US5798557A (en) 1996-08-29 1998-08-25 Harris Corporation Lid wafer bond packaging and micromachining
US6263735B1 (en) * 1997-09-10 2001-07-24 Matsushita Electric Industrial Co., Ltd. Acceleration sensor
JPH11138668A (ja) * 1997-11-12 1999-05-25 Komatsu Ltd 板状構造体とその製造方法
DE19806818C1 (de) * 1998-02-18 1999-11-04 Siemens Matsushita Components Verfahren zur Herstellung eines elektronischen Bauelements, insbesondere eines mit akustischen Oberflächenwllen arbeitenden OFW-Bauelements
JP3846094B2 (ja) * 1998-03-17 2006-11-15 株式会社デンソー 半導体装置の製造方法
DE19857550A1 (de) * 1998-12-14 2000-06-21 Bosch Gmbh Robert Verfahren zur Verkapselung von metallischen Mikrobauteilen
JP4151164B2 (ja) 1999-03-19 2008-09-17 株式会社デンソー 半導体装置の製造方法
JP3533984B2 (ja) * 1999-03-26 2004-06-07 松下電工株式会社 半導体加速度センサおよびその製造方法
TW411593B (en) * 1999-06-22 2000-11-11 Vanguard Int Semiconduct Corp Plastic carrier mold with magnetic inserting article
US6452238B1 (en) * 1999-10-04 2002-09-17 Texas Instruments Incorporated MEMS wafer level package
US6768628B2 (en) * 2001-04-26 2004-07-27 Rockwell Automation Technologies, Inc. Method for fabricating an isolated microelectromechanical system (MEMS) device incorporating a wafer level cap

Also Published As

Publication number Publication date
US20030122227A1 (en) 2003-07-03
US20040255670A1 (en) 2004-12-23
WO2002056031A1 (en) 2002-07-18
EP1358489A1 (de) 2003-11-05
US20050142686A1 (en) 2005-06-30
EP1358489A4 (de) 2005-08-10
AT9321U1 (de) 2007-08-15
US6925875B2 (en) 2005-08-09
US7407614B2 (en) 2008-08-05
AUPR245301A0 (en) 2001-02-01
US20050142242A1 (en) 2005-06-30
EP1358489B1 (de) 2006-12-27
ATE349704T1 (de) 2007-01-15
US7284976B2 (en) 2007-10-23
US6777259B2 (en) 2004-08-17
JP2004525357A (ja) 2004-08-19

Similar Documents

Publication Publication Date Title
DE60217067D1 (de) Herstellungsverfahren für beschleunigungsmesser, der durch auf dem wafer-massstab angebrachte kappen geschützt wird
WO2003104473A8 (de) Galactosyl-isomalt, verfahren zu seiner herstellung und verwendung
ES2184070T3 (es) Derivados de oximas sustituidas utiles como antagonistas de la neuroquinina.
WO2006120208A8 (en) Processes for preparing of glucopyranosyl-substituted benzyl-benzene derivatives and intermediates therein
NO20072283L (no) Fremgangsmate for fremstilling av annelerte piperazin-2-on derivater samt mellomprodukter i samme
WO2005121078A3 (de) Substituierte cyclopenten-verbindungen
ATE443670T1 (de) Herstellungsverfahren für verschlusskappen
BR0209653A (pt) Processo para a preparação de poliisocianatos alifáticos com estrutura uretodiona, isocianurato bem como iminooxadiazindiona
SG170081A1 (en) Method of patterning and product(s) obtained therefrom
WO2004018695A3 (de) Verfahren zur herstellung von ketocarotinoiden in früchten von pflanzen
ATE273635T1 (de) Verfahren zum herstellen eines körperpflegemittels
DE50105687D1 (de) Sicherheitseinrichtung für eine fertigungsmaschine, z.b. eine abkantpresse
WO2005012271A3 (en) Process for the synthesis of biaryl oxazolidinones
WO2005048954A3 (en) Continuous process for producing hydroxyazapirones by oxidation
WO2007108011A3 (en) Process for the preparation of highly pure donepezil
YU101402A (sh) Visoko prečišćeni preparati simvastatina
WO2001002350A3 (de) Neue amino- und amidosulfonamide als antivirale mittel
WO2008074693A3 (en) Process for preparing 3,5-di-omicron-acyl-2-fluoro-2-c-methyl-d-ribono-gamma-lactone
BR0211897B1 (pt) processo para a produÇço de olefinas ramificadas.
WO2009029536A3 (en) Chemical production processes, systems, and catalyst compositions
WO2006135692A3 (en) Processes for the preparation of docetaxel
ATE553080T1 (de) Verkürztes verfahren zur herstellung von l- lobelin
WO2003006365A3 (en) Zeolite ssz-57
WO2003081712A3 (de) Gitterelement zum filtern von wellenlängen ≤ 100nm
WO2004039819A3 (de) Verfahren zur herstellung von palladium(0)-haltigen verbindungen

Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee