DE602007005794D1 - Bewegungsempfindliche anordnung mit mindestens einem transistor - Google Patents

Bewegungsempfindliche anordnung mit mindestens einem transistor

Info

Publication number
DE602007005794D1
DE602007005794D1 DE602007005794T DE602007005794T DE602007005794D1 DE 602007005794 D1 DE602007005794 D1 DE 602007005794D1 DE 602007005794 T DE602007005794 T DE 602007005794T DE 602007005794 T DE602007005794 T DE 602007005794T DE 602007005794 D1 DE602007005794 D1 DE 602007005794D1
Authority
DE
Germany
Prior art keywords
transistor
motion sensitive
sensitive arrangement
arrangement
motion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007005794T
Other languages
English (en)
Inventor
Eric Ollier
Laurent Duraffourg
Philippe Andreucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE602007005794D1 publication Critical patent/DE602007005794D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/13—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by measuring the force required to restore a proofmass subjected to inertial forces to a null position
    • G01P15/131—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by measuring the force required to restore a proofmass subjected to inertial forces to a null position with electrostatic counterbalancing means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0817—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for pivoting movement of the mass, e.g. in-plane pendulum
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/082—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for two degrees of freedom of movement of a single mass

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Thin Film Transistor (AREA)
DE602007005794T 2006-05-18 2007-05-16 Bewegungsempfindliche anordnung mit mindestens einem transistor Active DE602007005794D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0651822A FR2901263B1 (fr) 2006-05-18 2006-05-18 Dispositif sensible a un mouvement comportant au moins un transistor
PCT/EP2007/054775 WO2007135064A1 (fr) 2006-05-18 2007-05-16 Dispositif sensible a un mouvement comportant au moins un transistor

Publications (1)

Publication Number Publication Date
DE602007005794D1 true DE602007005794D1 (de) 2010-05-20

Family

ID=37873171

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007005794T Active DE602007005794D1 (de) 2006-05-18 2007-05-16 Bewegungsempfindliche anordnung mit mindestens einem transistor

Country Status (6)

Country Link
US (1) US8030690B2 (de)
EP (1) EP2018571B1 (de)
JP (1) JP2009537806A (de)
DE (1) DE602007005794D1 (de)
FR (1) FR2901263B1 (de)
WO (1) WO2007135064A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8945970B2 (en) * 2006-09-22 2015-02-03 Carnegie Mellon University Assembling and applying nano-electro-mechanical systems
FR2924421B1 (fr) * 2007-12-04 2010-02-19 Commissariat Energie Atomique Dispositif a circuit integre et n/mems encapsule et procede de realisation.
US8704314B2 (en) * 2007-12-06 2014-04-22 Massachusetts Institute Of Technology Mechanical memory transistor
CN101939906B (zh) * 2007-12-11 2014-10-29 康奈尔大学 谐振体晶体管和振荡器
US8872240B2 (en) 2008-11-18 2014-10-28 Ecole Polytechnique Federale De Lausanne (Epfl) Active multi-gate micro-electro-mechanical device with built-in transistor
FR2942682A1 (fr) 2009-02-27 2010-09-03 Commissariat Energie Atomique Dispositif resonant a caracteristiques ameliorees
FR2942681B1 (fr) 2009-02-27 2011-05-13 Commissariat Energie Atomique Dispositif resonant micrometrique ou nanometrique a transistors
FR2943654B1 (fr) 2009-03-30 2011-08-26 Commissariat Energie Atomique Realisation d'un dispositif micro-electronique comportant un composant nems en silicium monocristallin et un transistor dont la grille est realisee dans la meme couche que la structure mobile de ce composant.
JP2010245277A (ja) * 2009-04-06 2010-10-28 Fuji Electric Holdings Co Ltd 半導体センサおよびその製造方法
DE102009029217A1 (de) * 2009-09-04 2011-03-10 Robert Bosch Gmbh Inertialsensor mit einem Feldeffekttransistor
EP2330738A1 (de) 2009-12-03 2011-06-08 ETA SA Manufacture Horlogère Suisse MEMS-Resonator mit Transistor und einen solchen Resonator umfassender Oszillator
EP2693183A1 (de) * 2012-08-01 2014-02-05 Honeywell International Inc. Resonanzbeschleunigungs- und Drucksensor auf einem Chip
WO2014059080A1 (en) * 2012-10-12 2014-04-17 Texas State University-San Marcos A vertically movable gate field effect transistor (vmgfet) on a silicon-on-insulator (soi) wafer and method of forming a vmgfet
FR3017463B1 (fr) 2014-02-13 2020-11-13 Commissariat Energie Atomique Capteur de concentration de gaz a structure suspendue
US9608082B2 (en) * 2015-06-30 2017-03-28 Infineon Technologies Ag Electro-mechanical switching devices
US11035785B1 (en) * 2019-12-17 2021-06-15 International Business Machines Corporation Hybrid field effect transistor and surface enhanced infrared absorption based biosensor

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5834946A (ja) * 1981-08-27 1983-03-01 Nec Corp 半導体集積回路装置
JP3303430B2 (ja) * 1993-05-21 2002-07-22 株式会社デンソー Ｆｅｔ型加速度センサ
JPH07253442A (ja) * 1994-03-15 1995-10-03 Nippondenso Co Ltd 加速度センサ
JP3555214B2 (ja) * 1994-03-15 2004-08-18 株式会社デンソー 半導体加速度センサ
JP3269274B2 (ja) * 1994-03-15 2002-03-25 株式会社デンソー 加速度センサ
JPH0850022A (ja) * 1994-05-30 1996-02-20 Murata Mfg Co Ltd 角速度センサ
JPH08320339A (ja) * 1995-05-25 1996-12-03 Nippondenso Co Ltd 半導体力学量センサ
US6204544B1 (en) * 1999-02-12 2001-03-20 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Laterally movable gate field effect transistors for microsensors and microactuators
US6744173B2 (en) * 2000-03-24 2004-06-01 Analog Devices, Inc. Multi-layer, self-aligned vertical combdrive electrostatic actuators and fabrication methods
DE10029501C1 (de) * 2000-06-21 2001-10-04 Fraunhofer Ges Forschung Vertikal-Transistor mit beweglichen Gate und Verfahren zu dessen Herstelllung
FR2824664A1 (fr) * 2001-05-09 2002-11-15 St Microelectronics Sa Photodetecteur cmos comportant une photodiode en silicium amorphe
JP2003166999A (ja) * 2001-12-03 2003-06-13 Denso Corp 半導体力学量センサ
JP2003243504A (ja) * 2002-02-19 2003-08-29 Hitachi Ltd 半導体集積回路装置の製造方法
WO2003078299A1 (en) 2002-03-20 2003-09-25 Ecole Polytechnique Federale De Lausanne (Epfl) Process for manufacturing mems
JP4074774B2 (ja) * 2002-04-19 2008-04-09 独立行政法人科学技術振興機構 力センサ及び力検出装置並びに力検出方法
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JP2004212401A (ja) * 2004-02-12 2004-07-29 Denso Corp 半導体力学量センサ及びその製造方法

Also Published As

Publication number Publication date
US8030690B2 (en) 2011-10-04
JP2009537806A (ja) 2009-10-29
EP2018571A1 (de) 2009-01-28
FR2901263A1 (fr) 2007-11-23
US20090321793A1 (en) 2009-12-31
WO2007135064A1 (fr) 2007-11-29
EP2018571B1 (de) 2010-04-07
FR2901263B1 (fr) 2008-10-03

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