DE602006021049D1 - Verwendung eines diazoniumsalzs in einem verfahren zur modifizierung von isolierenden oder halbleitenden oberflächen und resultierende produkte - Google Patents
Verwendung eines diazoniumsalzs in einem verfahren zur modifizierung von isolierenden oder halbleitenden oberflächen und resultierende produkteInfo
- Publication number
- DE602006021049D1 DE602006021049D1 DE602006021049T DE602006021049T DE602006021049D1 DE 602006021049 D1 DE602006021049 D1 DE 602006021049D1 DE 602006021049 T DE602006021049 T DE 602006021049T DE 602006021049 T DE602006021049 T DE 602006021049T DE 602006021049 D1 DE602006021049 D1 DE 602006021049D1
- Authority
- DE
- Germany
- Prior art keywords
- diazonium salt
- insulated
- modifying
- semi
- resultant products
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/22—Compounds containing nitrogen bound to another nitrogen atom
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
- C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
- C08J2323/10—Homopolymers or copolymers of propene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2371/00—Characterised by the use of polyethers obtained by reactions forming an ether link in the main chain; Derivatives of such polymers
- C08J2371/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C08J2371/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0510914A FR2892325B1 (fr) | 2005-10-26 | 2005-10-26 | Procede de modification de surfaces isolantes, semi-conductrices ou metalliques, et produits tels qu'obtenus |
PCT/FR2006/002260 WO2007048894A1 (fr) | 2005-10-26 | 2006-10-09 | Procede de modification de surfaces isolantes ou semi- conductrices, et produits tels qu'obtenus |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006021049D1 true DE602006021049D1 (de) | 2011-05-12 |
Family
ID=36603677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006021049T Active DE602006021049D1 (de) | 2005-10-26 | 2006-10-09 | Verwendung eines diazoniumsalzs in einem verfahren zur modifizierung von isolierenden oder halbleitenden oberflächen und resultierende produkte |
Country Status (12)
Country | Link |
---|---|
US (1) | US8133549B2 (de) |
EP (1) | EP1948720B1 (de) |
JP (1) | JP5210170B2 (de) |
KR (1) | KR101367781B1 (de) |
CN (1) | CN101346419B (de) |
AT (1) | ATE503794T1 (de) |
CA (1) | CA2627222C (de) |
DE (1) | DE602006021049D1 (de) |
ES (1) | ES2373299T3 (de) |
FR (1) | FR2892325B1 (de) |
IL (1) | IL191022A (de) |
WO (1) | WO2007048894A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2910007B1 (fr) * | 2006-12-19 | 2009-03-06 | Commissariat Energie Atomique | Procede de preparation d'un film organique a la surface d'un support solide dans des conditions non-electrochimiques, support solide ainsi obtenu et kit de preparation |
FR2910010B1 (fr) | 2006-12-19 | 2009-03-06 | Commissariat Energie Atomique | Procede de preparation d'un film organique a la surface d'un support solide dans des conditions non-electrochimiques, support solide ainsi obtenu et kit de preparation |
US9725602B2 (en) * | 2006-12-19 | 2017-08-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for preparing an organic film at the surface of a solid support under non-electrochemical conditions, solid support thus obtained and preparation kit |
FR2910006B1 (fr) * | 2006-12-19 | 2009-03-06 | Commissariat Energie Atomique | Procede de preparation d'un film organique a la surface d'un support solide dans des conditions non-electrochimiques, support solide ainsi obtenu et kit de preparation |
FR2929618B1 (fr) * | 2008-04-03 | 2011-03-18 | Commissariat Energie Atomique | Procede pour assembler deux surfaces ou une surface avec une molecule d'interet |
KR101096031B1 (ko) | 2009-03-31 | 2011-12-19 | 한양대학교 산학협력단 | 자기조립단분자막 형성방법과 이를 이용한 반도체 소자의 구리배선 및 그의 형성방법 |
FR2943930B1 (fr) * | 2009-04-02 | 2011-09-30 | Commissariat Energie Atomique | Procede pour modifier l'energie de surface d'un solide |
US8287699B2 (en) * | 2009-07-27 | 2012-10-16 | Nanotek Instruments, Inc. | Production of chemically functionalized nano graphene materials |
FR2969628B1 (fr) * | 2010-12-22 | 2013-09-27 | Pegastech | Procede de revetement par greffage chimique electrocatalyse d'une surface d'un substrat par une couche polymere. |
US10329232B2 (en) | 2012-04-13 | 2019-06-25 | Universite Libre De Bruxelles (Ulb) | Materials coated with calixarenes |
FR3019477B1 (fr) | 2014-04-03 | 2023-03-17 | Commissariat Energie Atomique | Procede de fonctionnalisation de surface |
US10407556B2 (en) * | 2014-06-11 | 2019-09-10 | The Royal Institution For The Advancement Of Learning/Mcgill University | Surface modification methods for biomedical scaffolds |
RU2640768C1 (ru) * | 2016-12-29 | 2018-01-11 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Российский экономический университет имени Г.В. Плеханова" (ФГБОУ ВО "РЭУ им. Г.В. Плеханова") | Способ модификации поверхности эластомера |
CN110945298B (zh) * | 2017-06-16 | 2022-06-10 | 开利公司 | 电热元件、包含电热元件的传热***及它们的制备方法 |
CN109401360B (zh) * | 2017-08-18 | 2020-08-21 | 中国科学院化学研究所 | 一种对高温结构陶瓷材料进行表面改性的方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3311889A1 (de) * | 1983-03-31 | 1984-10-11 | Byk-Mallinckrodt Chemische Produkte Gmbh, 6057 Dietzenbach | Verfahren zur irreversiblen bindung von protein an polystyroloberflaechen unter erhaltung der biologischen aktivitaet, so erhaltene polystyroloberflaechen und ihre verwendung |
DE3425328A1 (de) * | 1984-07-10 | 1986-01-16 | Hoechst Ag, 6230 Frankfurt | Lichtempfindliches gemisch und damit hergestelltes lichtempfindliches aufzeichnungsmaterial |
FR2672307B1 (fr) * | 1991-02-01 | 1993-06-04 | Centre Nat Rech Scient | Procede de modification de la surface de materiaux carbones par reduction electrochimique de sels de diazonium, notamment de fibres de carbone pour materiaux composites, materiaux carbones ainsi modifies. |
FR2761377B1 (fr) * | 1997-03-27 | 1999-05-07 | Centre Nat Rech Scient | Procede de realisation par voie electrochimique d'un materiau carbone dont la surface est modifiee par des groupes organiques, utilisation du materiau modifie |
US6458458B1 (en) * | 1998-10-13 | 2002-10-01 | Cabot Corporation | Polymer coated carbon products and other pigments and methods of making same by aqueous media polymerizations or solvent coating methods |
FR2804973B1 (fr) * | 2000-02-11 | 2002-09-20 | Univ Paris 7 Denis Diderot | Materiau metallique dont la surface est modifiee, son procede de preparation et utilisation du materiau modifie |
US7250147B2 (en) * | 2001-01-29 | 2007-07-31 | Tour James M | Process for derivatizing carbon nanotubes with diazonium species |
US6555175B2 (en) * | 2001-02-20 | 2003-04-29 | Joseph E. Johnson | Process for the surface modification of a polymeric substrate |
FR2829046B1 (fr) * | 2001-08-28 | 2005-01-14 | Commissariat Energie Atomique | Procede de greffage et de croissance d'un film organique conducteur sur une surface |
WO2004046099A2 (en) * | 2002-02-01 | 2004-06-03 | William Marsh Rice University | Method of making a molecule-surface interface |
FR2838048B1 (fr) * | 2002-04-03 | 2005-05-27 | Prod Dentaires Pierre Rolland | Produit dentaire reticulable/dereticulable |
EP1663863A2 (de) * | 2003-07-29 | 2006-06-07 | William Marsh Rice University | Selektive funktionalisierung von kohlenstoffnanoröhren |
FR2871162B1 (fr) * | 2004-06-02 | 2007-06-29 | Univ Paris 7 Denis Diderot | Materiau de surface modifiee, son procede de preparation et ses utilisations |
US8784635B2 (en) * | 2006-02-28 | 2014-07-22 | Alchimer | Formation of organic electro-grafted films on the surface of electrically conductive or semi-conductive surfaces |
FR2904319B1 (fr) * | 2006-07-27 | 2009-10-30 | Commissariat Energie Atomique | Sels de diazonium polymerisables, procede de fabrication et utilisations de ceux-ci |
-
2005
- 2005-10-26 FR FR0510914A patent/FR2892325B1/fr active Active
-
2006
- 2006-10-09 EP EP06820167A patent/EP1948720B1/de active Active
- 2006-10-09 ES ES06820167T patent/ES2373299T3/es active Active
- 2006-10-09 JP JP2008537128A patent/JP5210170B2/ja active Active
- 2006-10-09 WO PCT/FR2006/002260 patent/WO2007048894A1/fr active Application Filing
- 2006-10-09 KR KR1020087012553A patent/KR101367781B1/ko active IP Right Grant
- 2006-10-09 AT AT06820167T patent/ATE503794T1/de not_active IP Right Cessation
- 2006-10-09 DE DE602006021049T patent/DE602006021049D1/de active Active
- 2006-10-09 US US12/091,894 patent/US8133549B2/en not_active Expired - Fee Related
- 2006-10-09 CA CA2627222A patent/CA2627222C/fr active Active
- 2006-10-09 CN CN2006800491558A patent/CN101346419B/zh active Active
-
2008
- 2008-04-27 IL IL191022A patent/IL191022A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20090301862A1 (en) | 2009-12-10 |
CN101346419A (zh) | 2009-01-14 |
JP2009518459A (ja) | 2009-05-07 |
ES2373299T3 (es) | 2012-02-02 |
EP1948720A1 (de) | 2008-07-30 |
IL191022A (en) | 2013-08-29 |
CA2627222C (fr) | 2014-08-05 |
KR101367781B1 (ko) | 2014-02-27 |
CN101346419B (zh) | 2012-05-09 |
WO2007048894A1 (fr) | 2007-05-03 |
EP1948720B1 (de) | 2011-03-30 |
FR2892325B1 (fr) | 2008-01-18 |
KR20080072003A (ko) | 2008-08-05 |
US8133549B2 (en) | 2012-03-13 |
ATE503794T1 (de) | 2011-04-15 |
JP5210170B2 (ja) | 2013-06-12 |
CA2627222A1 (fr) | 2007-05-03 |
FR2892325A1 (fr) | 2007-04-27 |
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