DE602006014189D1 - Ultraviolett-sensor - Google Patents
Ultraviolett-sensorInfo
- Publication number
- DE602006014189D1 DE602006014189D1 DE602006014189T DE602006014189T DE602006014189D1 DE 602006014189 D1 DE602006014189 D1 DE 602006014189D1 DE 602006014189 T DE602006014189 T DE 602006014189T DE 602006014189 T DE602006014189 T DE 602006014189T DE 602006014189 D1 DE602006014189 D1 DE 602006014189D1
- Authority
- DE
- Germany
- Prior art keywords
- ultraviolet sensor
- ultraviolet
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005338319 | 2005-11-24 | ||
PCT/JP2006/309798 WO2007060758A1 (ja) | 2005-11-24 | 2006-05-17 | 紫外線センサ |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006014189D1 true DE602006014189D1 (de) | 2010-06-17 |
Family
ID=38066998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006014189T Active DE602006014189D1 (de) | 2005-11-24 | 2006-05-17 | Ultraviolett-sensor |
Country Status (5)
Country | Link |
---|---|
US (2) | US8344371B2 (de) |
EP (1) | EP1953833B1 (de) |
JP (1) | JP5062422B2 (de) |
DE (1) | DE602006014189D1 (de) |
WO (1) | WO2007060758A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3952076B1 (ja) * | 2006-04-25 | 2007-08-01 | 株式会社村田製作所 | 紫外線センサ |
US9880052B2 (en) | 2013-10-02 | 2018-01-30 | The Joan and Irwin Jacobs Technion-Cornell Innovation Institute | Methods, systems, and apparatuses for accurate measurement and real-time feedback of solar ultraviolet exposure |
US9798458B2 (en) | 2013-10-02 | 2017-10-24 | The Joan and Irwin Jacobs Technion-Cornell Innovation Institute | Methods, systems, and apparatuses for accurate measurement and real-time feedback of solar ultraviolet exposure |
WO2017035384A1 (en) | 2015-08-25 | 2017-03-02 | The Joan and Irwin Jacobs Technion-Cornell Innovation Institute | Methods, systems, and apparatuses for accurate measurement and real-time feedback of solar ultraviolet exposure |
US10739253B2 (en) | 2016-06-07 | 2020-08-11 | Youv Labs, Inc. | Methods, systems, and devices for calibrating light sensing devices |
USD829112S1 (en) | 2016-08-25 | 2018-09-25 | The Joan and Irwin Jacobs Technion-Cornell Innovation Institute | Sensing device |
CN108400249B (zh) * | 2018-03-07 | 2020-09-22 | 华中科技大学鄂州工业技术研究院 | 基于镍酸镧空穴传输层的钙钛矿太阳能电池及其制备方法 |
CN112997054A (zh) | 2018-10-19 | 2021-06-18 | 优夫实验室公司 | 用于精确测量来自太阳光的健康相关uv照射的方法、***和装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0296371B1 (de) * | 1987-06-22 | 1992-12-23 | Landis & Gyr Business Support AG | Photodetektor für Ultraviolett und Verfahren zur Herstellung |
JPH07326783A (ja) * | 1994-05-30 | 1995-12-12 | Canon Inc | 光起電力素子の形成方法及びそれに用いる薄膜製造装置 |
WO1997049119A1 (fr) * | 1996-06-19 | 1997-12-24 | Matsushita Electric Industrial Co., Ltd. | Materiau photoelectronique, dispositif faisant appel a ce materiau et procede de fabrication |
JPH10190017A (ja) | 1996-12-20 | 1998-07-21 | Nippon Shokubai Co Ltd | 光電変換素子 |
US6495392B2 (en) * | 1999-08-24 | 2002-12-17 | Canon Kabushiki Kaisha | Process for producing a semiconductor device |
JP2001284631A (ja) * | 2000-03-30 | 2001-10-12 | Toshiba Corp | 光検出器及び光検出システム |
JP2001307909A (ja) * | 2000-04-25 | 2001-11-02 | Toshiba Corp | 電流−電圧非直線抵抗体 |
AU2001268756A1 (en) * | 2000-06-26 | 2002-01-08 | University Of Maryland | Mgzno based uv detectors |
JP3743406B2 (ja) * | 2001-10-05 | 2006-02-08 | 株式会社村田製作所 | 導電性ペースト、積層セラミック電子部品の製造方法および積層セラミック電子部品 |
JP2003142700A (ja) * | 2001-11-05 | 2003-05-16 | Tdk Corp | 光センサ |
KR100634109B1 (ko) * | 2001-12-18 | 2006-10-17 | 세이코 엡슨 가부시키가이샤 | 발광 장치, 그 제조 방법, 전기 광학 장치, 및 전자 기기 |
US6846731B2 (en) * | 2002-01-04 | 2005-01-25 | Rutgers, The State University Of New Jersey | Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films |
JP2004172166A (ja) * | 2002-11-15 | 2004-06-17 | Zenji Hiroi | 光センサー |
JP2004311845A (ja) * | 2003-04-09 | 2004-11-04 | National Institute Of Advanced Industrial & Technology | 発電機能を有する可視光透過構造体 |
US7208768B2 (en) * | 2004-04-30 | 2007-04-24 | Sharp Laboratories Of America, Inc. | Electroluminescent device |
-
2006
- 2006-05-17 DE DE602006014189T patent/DE602006014189D1/de active Active
- 2006-05-17 WO PCT/JP2006/309798 patent/WO2007060758A1/ja active Application Filing
- 2006-05-17 JP JP2007546351A patent/JP5062422B2/ja not_active Expired - Fee Related
- 2006-05-17 EP EP06746501A patent/EP1953833B1/de not_active Not-in-force
-
2008
- 2008-05-20 US US12/123,849 patent/US8344371B2/en not_active Expired - Fee Related
-
2012
- 2012-08-08 US US13/569,422 patent/US8372681B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8372681B2 (en) | 2013-02-12 |
EP1953833A1 (de) | 2008-08-06 |
EP1953833B1 (de) | 2010-05-05 |
US20120302001A1 (en) | 2012-11-29 |
JP5062422B2 (ja) | 2012-10-31 |
US20080217611A1 (en) | 2008-09-11 |
JPWO2007060758A1 (ja) | 2009-05-07 |
US8344371B2 (en) | 2013-01-01 |
WO2007060758A1 (ja) | 2007-05-31 |
EP1953833A4 (de) | 2008-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |