DE602005021796D1 - Herstellungsprozess für "deep through vias" in einem Halbleiterbauelement - Google Patents

Herstellungsprozess für "deep through vias" in einem Halbleiterbauelement

Info

Publication number
DE602005021796D1
DE602005021796D1 DE602005021796T DE602005021796T DE602005021796D1 DE 602005021796 D1 DE602005021796 D1 DE 602005021796D1 DE 602005021796 T DE602005021796 T DE 602005021796T DE 602005021796 T DE602005021796 T DE 602005021796T DE 602005021796 D1 DE602005021796 D1 DE 602005021796D1
Authority
DE
Germany
Prior art keywords
vias
deep
semiconductor device
manufacturing process
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005021796T
Other languages
English (en)
Inventor
Mauro Marchi
Marco Ferrera
Caterina Riva
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE602005021796D1 publication Critical patent/DE602005021796D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0006Interconnects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76267Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0228Inertial sensors
    • B81B2201/0242Gyroscopes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0257Microphones or microspeakers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111Bulk micromachining
    • B81C2201/0116Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Pressure Sensors (AREA)
DE602005021796T 2005-11-16 2005-11-16 Herstellungsprozess für "deep through vias" in einem Halbleiterbauelement Active DE602005021796D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05425807A EP1788624B1 (de) 2005-11-16 2005-11-16 Herstellungsprozess für "deep through vias" in einem Halbleiterbauelement

Publications (1)

Publication Number Publication Date
DE602005021796D1 true DE602005021796D1 (de) 2010-07-22

Family

ID=36579569

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005021796T Active DE602005021796D1 (de) 2005-11-16 2005-11-16 Herstellungsprozess für "deep through vias" in einem Halbleiterbauelement

Country Status (3)

Country Link
US (1) US7800234B2 (de)
EP (2) EP1788624B1 (de)
DE (1) DE602005021796D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8564103B2 (en) * 2009-06-04 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing an electronic device
DE102010041101B4 (de) * 2010-09-21 2018-05-30 Robert Bosch Gmbh Bauelement mit einer Durchkontaktierung und ein Verfahren zur Herstellung eines Bauelements mit einer Durchkontaktierung
US8890324B2 (en) * 2010-09-28 2014-11-18 Freescale Semiconductor, Inc. Semiconductor structure having a through substrate via (TSV) and method for forming
FR2970120A1 (fr) * 2010-12-31 2012-07-06 St Microelectronics Crolles 2 Via traversant isole
TW201403782A (zh) * 2012-07-04 2014-01-16 Ind Tech Res Inst 基底穿孔的製造方法、矽穿孔結構及其電容控制方法
CN206136291U (zh) 2015-06-30 2017-04-26 意法半导体股份有限公司 微机电麦克风和电子***
ITUB20154032A1 (it) * 2015-09-30 2017-03-30 St Microelectronics Srl Microfono microelettromeccanico migliorato, sistema elettronico comprendente il microfono microelettromeccanico e metodo di fabbricazione
US20190035899A1 (en) * 2017-07-28 2019-01-31 Sanken Electric Co., Ltd. Semiconductor Device and Method for Manufacturing the Semiconductor Device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2765398B1 (fr) * 1997-06-25 1999-07-30 Commissariat Energie Atomique Structure a composant microelectronique en materiau semi-conducteur difficile a graver et a trous metallises
SE515158C2 (sv) * 1999-02-10 2001-06-18 Ericsson Telefon Ab L M Halvledaranordning med jordanslutning via en ej genomgående plugg
FR2805709B1 (fr) 2000-02-28 2002-05-17 Commissariat Energie Atomique Connexion electrique entre deux faces d'un substrat et procede de realisation
DE60035179T2 (de) 2000-04-28 2008-02-21 Stmicroelectronics S.R.L., Agrate Brianza Struktur zur elektrischen Verbindung eines ersten mit einem darüberliegenden zweiten Halbleitermaterial, diese elektrische Verbindung verwendendes Komposit und ihre Herstellung
EP1324382B1 (de) 2001-12-28 2007-03-07 STMicroelectronics S.r.l. Herstellungsverfahren für SOI Scheibe durch Wärmebehandlung und Oxidation von vergrabenen Kanälen
DE60142119D1 (de) * 2000-10-02 2010-06-24 Asahi Kasei Emd Corp Teilchen einer funktionellen metalllegierung.
US6458686B1 (en) * 2001-04-30 2002-10-01 Advanced Micro Devices, Inc. Inverse integrated circuit fabrication process
US6818464B2 (en) * 2001-10-17 2004-11-16 Hymite A/S Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes
EP1326272A1 (de) 2001-12-28 2003-07-09 STMicroelectronics S.r.l. Verfahren zur Herstellung von SOI-Strukturen
EP1351288B1 (de) * 2002-04-05 2015-10-28 STMicroelectronics Srl Verfahren zur Herstellung einer isolierten Durchkontaktierung durch einen Halbleiterkörper und zugehöriges Halbleiterbauelement
JP4241827B2 (ja) 2003-07-28 2009-03-18 ゲン キム,ス フランジを用いた管継手装置
EP1577656B1 (de) * 2004-03-19 2010-06-09 STMicroelectronics Srl Halbleiterdrucksensor und Verfahren zur Herstellung
ITTO20040244A1 (it) * 2004-04-20 2004-07-20 St Microelectronics Srl Procedimento per la fabbricazione di dispositivi integrati in piastrine semiconduttrici a basso spessore

Also Published As

Publication number Publication date
US7800234B2 (en) 2010-09-21
EP1788624A1 (de) 2007-05-23
EP2202791B1 (de) 2016-01-27
EP2202791A3 (de) 2011-04-13
US20080197512A1 (en) 2008-08-21
EP1788624B1 (de) 2010-06-09
EP2202791A2 (de) 2010-06-30

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