DE602005003279D1 - Semiconductor probe with resistive tip and its manufacturing process - Google Patents

Semiconductor probe with resistive tip and its manufacturing process

Info

Publication number
DE602005003279D1
DE602005003279D1 DE602005003279T DE602005003279T DE602005003279D1 DE 602005003279 D1 DE602005003279 D1 DE 602005003279D1 DE 602005003279 T DE602005003279 T DE 602005003279T DE 602005003279 T DE602005003279 T DE 602005003279T DE 602005003279 D1 DE602005003279 D1 DE 602005003279D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor probe
resistive tip
resistive
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005003279T
Other languages
German (de)
Other versions
DE602005003279T2 (en
Inventor
Hong-Sik Park
Kyoung-Lock Baeck
Ju-Hwan Jung
Hyoung-Soo Ko
Chul-Min Park
Seung-Bum Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602005003279D1 publication Critical patent/DE602005003279D1/en
Application granted granted Critical
Publication of DE602005003279T2 publication Critical patent/DE602005003279T2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/30—Scanning potential microscopy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/875—Scanning probe structure with tip detail
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/875—Scanning probe structure with tip detail
    • Y10S977/878—Shape/taper
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/875—Scanning probe structure with tip detail
    • Y10S977/879—Material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Radiology & Medical Imaging (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Micromachines (AREA)
  • Measuring Leads Or Probes (AREA)
  • Weting (AREA)
DE602005003279T 2004-09-07 2005-09-02 Semiconductor probe with resistive tip and its manufacturing process Active DE602005003279T2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040071221A KR100624434B1 (en) 2004-09-07 2004-09-07 Semiconductor probe with resistive tip and methoc of fabricating the same
KR2004071221 2004-09-07

Publications (2)

Publication Number Publication Date
DE602005003279D1 true DE602005003279D1 (en) 2007-12-27
DE602005003279T2 DE602005003279T2 (en) 2008-02-28

Family

ID=36072949

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005003279T Active DE602005003279T2 (en) 2004-09-07 2005-09-02 Semiconductor probe with resistive tip and its manufacturing process

Country Status (6)

Country Link
US (1) US7319224B2 (en)
EP (1) EP1632954B1 (en)
JP (1) JP4216836B2 (en)
KR (1) KR100624434B1 (en)
CN (1) CN1747071B (en)
DE (1) DE602005003279T2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100785006B1 (en) * 2005-09-03 2007-12-12 삼성전자주식회사 Semiconductor probe with resistive tip of high resolution and method of fabricating the same
US7461446B2 (en) * 2005-10-24 2008-12-09 Hitachi Global Storage Technologies Netherlands B.V. Method for repairing photoresist layer defects using index matching overcoat
KR100682956B1 (en) * 2006-01-09 2007-02-15 삼성전자주식회사 Method for reproducing information using semiconductor probe and device adopting the same
KR100909962B1 (en) 2006-05-10 2009-07-29 삼성전자주식회사 Electric field information reproducing head, electric field information recording / reproducing head and manufacturing method thereof and information storage device employing the same
US20070292652A1 (en) * 2006-06-20 2007-12-20 Samsung Electronics Co., Ltd. Apparatus and method for a ferroelectric disk, slider, head gimbal, actuator assemblies, and ferroelectric disk drive
KR100829565B1 (en) 2006-10-02 2008-05-14 삼성전자주식회사 Semiconductor probe having resistive tip of wedge shape and method of fabricating the same
KR100790893B1 (en) * 2006-10-20 2008-01-03 삼성전자주식회사 Semiconductor probe having embossed resistive tip and method of fabricating the same
US7861316B2 (en) * 2006-12-08 2010-12-28 Wisconsin Alumni Research Foundation Microscope probe having an ultra-tall tip
KR100842923B1 (en) * 2007-03-07 2008-07-03 삼성전자주식회사 Method of manufacture enhancement mode semiconductor probe using anisotropic wet etching and side-wall, and an information storage device using thereof
KR100767012B1 (en) * 2007-04-11 2007-10-17 주식회사 아이엠 Probe card, needle of probe card and manufacturing methods of needle of probe card
US8023393B2 (en) * 2007-05-10 2011-09-20 International Business Machines Corporation Method and apparatus for reducing tip-wear of a probe
US7677088B2 (en) * 2007-08-28 2010-03-16 Intellectual Properties Partners LLC Cantilever probe and applications of the same
US8266718B2 (en) * 2009-02-20 2012-09-11 The Board Of Trustees Of Leland Stanford Junior University Modulated microwave microscopy and probes used therewith
JP6472228B2 (en) * 2014-12-01 2019-02-20 株式会社日本マイクロニクス Cantilever probe and probe card
WO2017103789A1 (en) * 2015-12-14 2017-06-22 Universidade Federal De Minas Gerais - Ufmg Metallic device for scanning probe microscopy and method for manufacturing same
KR102401664B1 (en) 2018-02-06 2022-05-24 주식회사 히타치하이테크 Probe modules and probes
KR102401663B1 (en) 2018-02-06 2022-05-24 주식회사 히타치하이테크 Evaluation device for semiconductor devices
CN111557041B (en) 2018-02-06 2023-12-26 株式会社日立高新技术 Method for manufacturing semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0668791A (en) * 1992-08-24 1994-03-11 Olympus Optical Co Ltd Cantilever for scanning type probe microscope and manufacture thereof
US5618760A (en) 1994-04-12 1997-04-08 The Board Of Trustees Of The Leland Stanford, Jr. University Method of etching a pattern on a substrate using a scanning probe microscope
JP3453871B2 (en) 1994-08-31 2003-10-06 株式会社資生堂 Evaluation method of desmosome function
JPH08313541A (en) * 1995-05-16 1996-11-29 Olympus Optical Co Ltd Cantilever for scanning probe microscope and its manufacture
JP3370527B2 (en) * 1996-03-08 2003-01-27 セイコーインスツルメンツ株式会社 Atomic force microscope probe, method of manufacturing the same, and atomic force microscope
US6477132B1 (en) * 1998-08-19 2002-11-05 Canon Kabushiki Kaisha Probe and information recording/reproduction apparatus using the same
JP2000067478A (en) 1998-08-19 2000-03-03 Canon Inc Information reproduction probe, its manufacture, and information reproducing device using the same
KR100366701B1 (en) * 1999-11-09 2003-01-06 삼성전자 주식회사 Probe of scanning probe microscope having a field effect transistor channel and Fabrication method thereof
US6479892B1 (en) * 2000-10-31 2002-11-12 Motorola, Inc. Enhanced probe for gathering data from semiconductor devices
KR100466158B1 (en) * 2001-11-21 2005-01-14 재단법인서울대학교산학협력재단 Single/Multiple Cantilever Probe Having High Resolution for Atomic Force Microscopy and Method for Producing the Same
DE50200467D1 (en) * 2002-03-20 2004-06-24 Nanoworld Ag Neuchatel SPM sensor and method of making the same
EP1347264B1 (en) * 2002-03-20 2004-12-15 Nanoworld AG Method of fabricating a probe for SPM
KR100468850B1 (en) * 2002-05-08 2005-01-29 삼성전자주식회사 Semiconductor probe with resistive tip and Method of fabricating thereof and Information recording apparatus, Information reproducing apparatus, and Information measuring apparatus comprising the same
KR100537508B1 (en) * 2003-04-10 2005-12-19 삼성전자주식회사 Method of fabricating semiconductor probe with resistive tip
US6812460B1 (en) * 2003-10-07 2004-11-02 Zyvex Corporation Nano-manipulation by gyration

Also Published As

Publication number Publication date
EP1632954B1 (en) 2007-11-14
US7319224B2 (en) 2008-01-15
KR20060022411A (en) 2006-03-10
JP2006078485A (en) 2006-03-23
CN1747071B (en) 2010-09-01
EP1632954A3 (en) 2006-06-07
JP4216836B2 (en) 2009-01-28
EP1632954A2 (en) 2006-03-08
KR100624434B1 (en) 2006-09-19
DE602005003279T2 (en) 2008-02-28
CN1747071A (en) 2006-03-15
US20060060779A1 (en) 2006-03-23

Similar Documents

Publication Publication Date Title
DE602005003279D1 (en) Semiconductor probe with resistive tip and its manufacturing process
DE602006000055D1 (en) Semiconductor probe with resistive tip and its manufacturing process
DE602005009333D1 (en) SEMICONDUCTOR ELEMENT AND METHOD WITH NANOTUBE CONTACTS
DE602006007049D1 (en) Heating element and heating device with heating elements
DE602007009443D1 (en) Nanowire composition and manufacturing method therefor
DE602005004209D1 (en) Alloy particles with kfz structure and manufacturing process
DE602005007068D1 (en) SOCKET WITH COUNTERPROOF AND ALIGNMENT
DE602004006179D1 (en) Absorbent article and manufacturing process
DE602006019900D1 (en) INJECTION METHOD AND DEVICE
DE602005025091D1 (en) PIEZOOSCILLATOR AND MANUFACTURING METHOD THEREFOR
DE602005021589D1 (en) Multi-axis pressure sensor chip and multi-axis pressure sensor with it
DE602004027663D1 (en) RANDOM PRODUCTION METHOD AND INTEGRATED SEMICONDUCTOR DEVICE
DE602006009540D1 (en) L AND MANUFACTURING METHOD THEREFOR
DE602007006370D1 (en) Semiconductor device and manufacturing method thereof
DE602005022751D1 (en) SLIDING ELEMENT AND MANUFACTURING METHOD THEREFOR
DE602006000502D1 (en) Connection contact and manufacturing method thereof
DE602006020117D1 (en) NADELLAGER AND MANUFACTURING METHOD THEREFOR
DE602006000779D1 (en) Planetenreibradantriebsvorrichtung and steering device with such
DE602005018561D1 (en) Semiconductor memory device and its manufacturing method
AU2003282399A1 (en) Method of fabricating semiconductor probe with resistive tip
DE602007013325D1 (en) Semiconductor device and manufacturing method therefor
DE602005020158D1 (en) GLUCIAN DERIVATIVES AND MANUFACTURING METHOD THEREFOR
DE602006019083D1 (en) MEMORY DEVICE WITH INTEGRATED CIRCUIT, SYEI AND COLUMNS
DE602004030620D1 (en) PLATINUM ALLOY AND MANUFACTURING METHOD
DE602006019670D1 (en) Semiconductor device and its manufacture

Legal Events

Date Code Title Description
8364 No opposition during term of opposition