DE602004024164D1 - Herstellungsverfahren für ein elektronisches Dünnfilm-Bauelement - Google Patents
Herstellungsverfahren für ein elektronisches Dünnfilm-BauelementInfo
- Publication number
- DE602004024164D1 DE602004024164D1 DE602004024164T DE602004024164T DE602004024164D1 DE 602004024164 D1 DE602004024164 D1 DE 602004024164D1 DE 602004024164 T DE602004024164 T DE 602004024164T DE 602004024164 T DE602004024164 T DE 602004024164T DE 602004024164 D1 DE602004024164 D1 DE 602004024164D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- thin film
- electronic component
- film electronic
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/739,189 US6921679B2 (en) | 2003-12-19 | 2003-12-19 | Electronic device and methods for fabricating an electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602004024164D1 true DE602004024164D1 (de) | 2009-12-31 |
Family
ID=34552789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602004024164T Active DE602004024164D1 (de) | 2003-12-19 | 2004-12-15 | Herstellungsverfahren für ein elektronisches Dünnfilm-Bauelement |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6921679B2 (de) |
| EP (2) | EP2128902A3 (de) |
| JP (1) | JP4319137B2 (de) |
| DE (1) | DE602004024164D1 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060012742A1 (en) * | 2004-07-16 | 2006-01-19 | Yaw-Ming Tsai | Driving device for active matrix organic light emitting diode display and manufacturing method thereof |
| US7816146B2 (en) * | 2005-12-27 | 2010-10-19 | Palo Alto Research Center Incorporated | Passive electronic devices |
| US7784173B2 (en) * | 2005-12-27 | 2010-08-31 | Palo Alto Research Center Incorporated | Producing layered structures using printing |
| US8637138B2 (en) | 2005-12-27 | 2014-01-28 | Palo Alto Research Center Incorporated | Layered structures on thin substrates |
| JP5458296B2 (ja) * | 2006-10-27 | 2014-04-02 | 国立大学法人岩手大学 | 微細加工構造及びその加工方法並びに電子デバイス及びその製造方法 |
| US7576000B2 (en) | 2006-12-22 | 2009-08-18 | Palo Alto Research Center Incorporated | Molded dielectric layer in print-patterned electronic circuits |
| US8258021B2 (en) * | 2007-10-26 | 2012-09-04 | Palo Alto Research Center Incorporated | Protecting semiconducting oxides |
| US7755156B2 (en) * | 2007-12-18 | 2010-07-13 | Palo Alto Research Center Incorporated | Producing layered structures with lamination |
| US7586080B2 (en) * | 2007-12-19 | 2009-09-08 | Palo Alto Research Center Incorporated | Producing layered structures with layers that transport charge carriers in which each of a set of channel regions or portions operates as an acceptable switch |
| US8283655B2 (en) | 2007-12-20 | 2012-10-09 | Palo Alto Research Center Incorporated | Producing layered structures with semiconductive regions or subregions |
| DE102011085114B4 (de) * | 2011-10-24 | 2016-02-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Dünnfilmtransistor |
| CN102779783B (zh) * | 2012-06-04 | 2014-09-17 | 北京京东方光电科技有限公司 | 一种像素结构及其制造方法、显示装置 |
| EP2811525B1 (de) * | 2013-03-14 | 2019-02-13 | Karlsruher Institut für Technologie | Elektro-chemisch kontrollierter Feldeffekttransistor, Methode zu dessen Herstellung, dessen Verwendung und diesen Feldeffekttransistor enthaltende Elektronik |
| CN108428796B (zh) * | 2017-02-14 | 2021-10-15 | 元太科技工业股份有限公司 | 有机薄膜晶体管与显示装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US27082A (en) * | 1860-02-07 | Improvement in sewing-machines | ||
| US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
| US5017989A (en) * | 1989-12-06 | 1991-05-21 | Xerox Corporation | Solid state radiation sensor array panel |
| JPH09260669A (ja) | 1996-03-19 | 1997-10-03 | Nec Corp | 半導体装置とその製造方法 |
| JPH09307114A (ja) * | 1996-05-17 | 1997-11-28 | Fujitsu Ltd | 薄膜トランジスタ及びその製造方法及び液晶表示装置 |
| EP0919850B1 (de) * | 1997-11-25 | 2008-08-27 | NEC LCD Technologies, Ltd. | Aktiv-Matrix-Flüssigkristallanzeige und deren Herstellungsverfahren |
| KR100310179B1 (ko) * | 1999-04-01 | 2001-10-29 | 구본준, 론 위라하디락사 | 엑스레이 영상 감지소자 및 그 제조방법 |
| JP2003508807A (ja) * | 1999-08-31 | 2003-03-04 | イー−インク コーポレイション | 電子的に駆動されるディスプレイ用トランジスタ |
| US7439096B2 (en) * | 2001-02-21 | 2008-10-21 | Lucent Technologies Inc. | Semiconductor device encapsulation |
| KR20040043116A (ko) * | 2001-04-10 | 2004-05-22 | 사르노프 코포레이션 | 유기 박막 트랜지스터를 이용한 고성능 액티브 매트릭스화소 제공방법 및 제공장치 |
| US6872320B2 (en) | 2001-04-19 | 2005-03-29 | Xerox Corporation | Method for printing etch masks using phase-change materials |
| JP4841751B2 (ja) * | 2001-06-01 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 有機半導体装置及びその作製方法 |
| EP1367659B1 (de) | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organischer Feldeffekt-Transistor |
| US20030227014A1 (en) * | 2002-06-11 | 2003-12-11 | Xerox Corporation. | Process for forming semiconductor layer of micro-and nano-electronic devices |
| US6639531B1 (en) * | 2002-09-27 | 2003-10-28 | Cirrus Logic, Inc. | Cascaded noise shaping circuits with low out-of-band noise and methods and systems using the same |
-
2003
- 2003-12-19 US US10/739,189 patent/US6921679B2/en not_active Expired - Fee Related
-
2004
- 2004-12-15 DE DE602004024164T patent/DE602004024164D1/de active Active
- 2004-12-15 EP EP09168457A patent/EP2128902A3/de not_active Ceased
- 2004-12-15 EP EP04029722A patent/EP1548837B1/de not_active Expired - Fee Related
- 2004-12-17 JP JP2004366903A patent/JP4319137B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-04 US US11/071,305 patent/US7405424B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US6921679B2 (en) | 2005-07-26 |
| EP1548837B1 (de) | 2009-11-18 |
| EP1548837A3 (de) | 2007-09-12 |
| US20050133788A1 (en) | 2005-06-23 |
| JP2005183990A (ja) | 2005-07-07 |
| EP2128902A2 (de) | 2009-12-02 |
| EP2128902A3 (de) | 2010-01-06 |
| US20050208695A1 (en) | 2005-09-22 |
| US7405424B2 (en) | 2008-07-29 |
| EP1548837A2 (de) | 2005-06-29 |
| JP4319137B2 (ja) | 2009-08-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |