DE602004007231D1 - Optische Vorrichtung zur Erfassung eines optischen Signales und deren Herstellungsverfahren - Google Patents

Optische Vorrichtung zur Erfassung eines optischen Signales und deren Herstellungsverfahren

Info

Publication number
DE602004007231D1
DE602004007231D1 DE602004007231T DE602004007231T DE602004007231D1 DE 602004007231 D1 DE602004007231 D1 DE 602004007231D1 DE 602004007231 T DE602004007231 T DE 602004007231T DE 602004007231 T DE602004007231 T DE 602004007231T DE 602004007231 D1 DE602004007231 D1 DE 602004007231D1
Authority
DE
Germany
Prior art keywords
detecting
manufacturing
optical
optical signal
optical device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004007231T
Other languages
English (en)
Other versions
DE602004007231T2 (de
Inventor
Seong-Mo Hwang
Young-Hun Kim
Seung-Ho Nam
Young-Chan Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004007231D1 publication Critical patent/DE602004007231D1/de
Application granted granted Critical
Publication of DE602004007231T2 publication Critical patent/DE602004007231T2/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optical Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
DE602004007231T 2003-12-17 2004-12-17 Optische Vorrichtung zur Erfassung eines optischen Signales und deren Herstellungsverfahren Expired - Fee Related DE602004007231T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020030092504A KR100624415B1 (ko) 2003-12-17 2003-12-17 광디바이스 및 그 제조방법
KR2003092504 2003-12-17

Publications (2)

Publication Number Publication Date
DE602004007231D1 true DE602004007231D1 (de) 2007-08-09
DE602004007231T2 DE602004007231T2 (de) 2007-10-11

Family

ID=34545882

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004007231T Expired - Fee Related DE602004007231T2 (de) 2003-12-17 2004-12-17 Optische Vorrichtung zur Erfassung eines optischen Signales und deren Herstellungsverfahren

Country Status (5)

Country Link
US (1) US7233718B2 (de)
EP (1) EP1548474B1 (de)
JP (1) JP4117285B2 (de)
KR (1) KR100624415B1 (de)
DE (1) DE602004007231T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005040558A1 (de) * 2005-08-26 2007-03-01 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip
JP2008096484A (ja) * 2006-10-06 2008-04-24 Sony Corp 光半導体装置
JP2011505596A (ja) * 2007-11-30 2011-02-24 スリーエム イノベイティブ プロパティズ カンパニー 光導波路を作製する方法
US9111764B2 (en) * 2012-07-13 2015-08-18 Infineon Technologies Ag Integrated semiconductor device and a bridge circuit with the integrated semiconductor device
FR3065323B1 (fr) * 2017-04-13 2019-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Photodiode
US10571629B1 (en) * 2018-08-17 2020-02-25 University Of Southampton Waveguide for an integrated photonic device
US10914892B2 (en) * 2018-10-18 2021-02-09 Cisco Technology, Inc. Germanium photodetector coupled to a waveguide
JP7275843B2 (ja) * 2019-05-17 2023-05-18 富士通オプティカルコンポーネンツ株式会社 光半導体素子
JP7144011B2 (ja) * 2019-07-25 2022-09-29 株式会社Sumco 光モジュールの製造方法及び光モジュール
US11199672B1 (en) * 2020-06-15 2021-12-14 Globalfoundries U.S. Inc. Multiple waveguide coupling to one or more photodetectors

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229867A (ja) 1987-03-11 1988-09-26 ハネウエル・インコーポレーテツド チヤネル導波路形シヨツトキ・フオトダイオード
US5178728A (en) * 1991-03-28 1993-01-12 Texas Instruments Incorporated Integrated-optic waveguide devices and method
FR2676126B1 (fr) * 1991-04-30 1993-07-23 France Telecom Dispositif optoelectronique a guide optique et photodetecteur integres.
JP2865000B2 (ja) * 1994-10-27 1999-03-08 日本電気株式会社 出力導波路集積半導体レーザとその製造方法
US5682455A (en) * 1996-02-29 1997-10-28 Northern Telecom Limited Semiconductor optical waveguide
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3558479B2 (ja) 1997-03-17 2004-08-25 シャープ株式会社 導波光検出器及びその製造方法
DE19714054A1 (de) * 1997-04-05 1998-10-08 Daimler Benz Ag SiGe-Photodetektor mit hohem Wirkungsgrad
US6166372A (en) * 1997-05-27 2000-12-26 Sharp Kabushiki Kaisha Polarization detection device and method for producing the same
US6154475A (en) * 1997-12-04 2000-11-28 The United States Of America As Represented By The Secretary Of The Air Force Silicon-based strain-symmetrized GE-SI quantum lasers
US6330265B1 (en) * 1998-04-21 2001-12-11 Kabushiki Kaisha Toshiba Optical functional element and transmission device
JP2000298218A (ja) 1999-04-13 2000-10-24 Hitachi Ltd 光インターコネクト装置およびその製造方法
US6437375B1 (en) * 2000-06-05 2002-08-20 Micron Technology, Inc. PD-SOI substrate with suppressed floating body effect and method for its fabrication
WO2002013342A2 (en) * 2000-08-04 2002-02-14 Amberwave Systems Corporation Silicon wafer with embedded optoelectronic material for monolithic oeic
US6498873B1 (en) * 2000-08-31 2002-12-24 Agere Systems Inc. Photo detector assembly
US6559471B2 (en) * 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
JP2002374042A (ja) * 2000-12-12 2002-12-26 Fuji Photo Film Co Ltd 半導体レーザ素子
WO2002077682A2 (en) * 2001-03-27 2002-10-03 Metrophotonics Inc. Vertical integration of active devices with passive semiconductor waveguides
EP1381088B1 (de) * 2001-04-18 2008-03-26 Matsushita Electric Industrial Co., Ltd. Halbleiterbauelement
US6723622B2 (en) * 2002-02-21 2004-04-20 Intel Corporation Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer

Also Published As

Publication number Publication date
DE602004007231T2 (de) 2007-10-11
EP1548474B1 (de) 2007-06-27
JP4117285B2 (ja) 2008-07-16
JP2005182030A (ja) 2005-07-07
KR100624415B1 (ko) 2006-09-18
EP1548474A1 (de) 2005-06-29
US20050169593A1 (en) 2005-08-04
KR20050060784A (ko) 2005-06-22
US7233718B2 (en) 2007-06-19

Similar Documents

Publication Publication Date Title
DE60211112D1 (de) Verfahren und Vorrichtung zur Wellenformung eines optischen Signals
DE50107816D1 (de) Vorrichtung zur Lagerung eines optischen Elementes
DE602005012670D1 (de) Vorrichtung und Verfahren zur Messung einer optischen Wellenform
DE502004004343D1 (de) Verfahren und Vorrichtung zur Abstandsmessung
DE502004006917D1 (de) Vorrichtung und verfahren zur kalibrierung eines bildsensors
DE50108155D1 (de) Vorrichtung zur Lagerung eines optischen Elementes
ATE473570T1 (de) Verfahren und vorrichtung zur endknoten- gestützten neighbor-erkennung
DE602004029837D1 (de) Vorrichtung zur Umgebungserfassung eines Fahrzeugs
DE602005000188D1 (de) Verfahren und Vorrichtung zur optischen Signalübertragung
DE50205077D1 (de) Vorrichtung zur Lagerung eines optischen Elementes in einer Optik
DE60308135D1 (de) Sensorvorrichtung, Messsystem und Verfahren zur Kalibrierung
DE602004011785D1 (de) Verfahren und vorrichtung zur messung der reifengleichförmigkeit
DE502004002547D1 (de) Vorrichtung zum optischen Vermessen eines Objektes
DE60232024D1 (de) Retikel und verfahren zur messung optischer eigenschaften
FI20030867A (fi) Optinen mittausmenetelmä ja laboratoriomittauslaite
DE602004018278D1 (de) Vorrichtung und verfahren zur schnellen detektion
DE602005018261D1 (de) Verfahren und vorrichtung zum messen von dünnfilmproben
DE602005021160D1 (de) Verfahren und vorrichtung zur herstellung eines optischen kabels und so hergestelltes kabel
DE602005003530D1 (de) Verfahren und Vorrichtung zur Bestimmung der Linearität eines optischen Detektors
DE10239435B4 (de) Vorrichtung und Verfahren zur optischen Distanzmessung
DE60315781D1 (de) Verfahren und Vorrichtung zur optischen Dispersionsüberwachung
DE602005012187D1 (de) Vorrichtung zur Überwachung einer optischen Wellenform und Oszilloskop
DE10196463T1 (de) Optische Vorrichtung und Verfahren zum Herstellen einer optischen Vorrichtung
DE60337017D1 (de) Verfahren und vorrichtung zur optischen inspektion
DE60312565D1 (de) Vorrichtung zur erfassung eines rf-feldes

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee