DE60107581D1 - Vielfachsegmentierter integrierter laser und herstellungsverfahren - Google Patents

Vielfachsegmentierter integrierter laser und herstellungsverfahren

Info

Publication number
DE60107581D1
DE60107581D1 DE60107581T DE60107581T DE60107581D1 DE 60107581 D1 DE60107581 D1 DE 60107581D1 DE 60107581 T DE60107581 T DE 60107581T DE 60107581 T DE60107581 T DE 60107581T DE 60107581 D1 DE60107581 D1 DE 60107581D1
Authority
DE
Germany
Prior art keywords
waveguide segments
segments
manufacturing
integrated laser
spaced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60107581T
Other languages
English (en)
Other versions
DE60107581T2 (de
Inventor
Moti Margalit
Meir Orenstein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lambda Crossing Ltd
Original Assignee
Lambda Crossing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lambda Crossing Ltd filed Critical Lambda Crossing Ltd
Publication of DE60107581D1 publication Critical patent/DE60107581D1/de
Application granted granted Critical
Publication of DE60107581T2 publication Critical patent/DE60107581T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Surgery Devices (AREA)
  • Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
DE60107581T 2000-09-06 2001-09-06 Vielfachsegmentierter integrierter laser und herstellungsverfahren Expired - Fee Related DE60107581T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23045700P 2000-09-06 2000-09-06
US230457P 2000-09-06
PCT/IL2001/000840 WO2002021650A2 (en) 2000-09-06 2001-09-06 A multisegment integrated laser and a method for fabrication thereof

Publications (2)

Publication Number Publication Date
DE60107581D1 true DE60107581D1 (de) 2005-01-05
DE60107581T2 DE60107581T2 (de) 2005-10-06

Family

ID=22865294

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60107581T Expired - Fee Related DE60107581T2 (de) 2000-09-06 2001-09-06 Vielfachsegmentierter integrierter laser und herstellungsverfahren

Country Status (8)

Country Link
US (1) US6885689B2 (de)
EP (1) EP1316129B1 (de)
AT (1) ATE284084T1 (de)
AU (1) AU2001288026A1 (de)
CA (1) CA2421657A1 (de)
DE (1) DE60107581T2 (de)
IL (1) IL154662A0 (de)
WO (1) WO2002021650A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1101484B1 (de) 1999-11-17 2007-01-10 Kabushiki Kaisha Shofu Dentales Füllungsmaterial
US20040037341A1 (en) * 2002-08-21 2004-02-26 Tan Michael R. Laser utilizing a microdisk resonator
IL152195A0 (en) 2002-10-09 2003-05-29 Lambda Crossing Ltd Tunable laser
DE602004019458D1 (de) * 2004-12-01 2009-03-26 Binoptics Corp Wellenlängenumsetzer-/inverter
US8737446B2 (en) * 2010-03-25 2014-05-27 Sumitomo Electric Industries, Ltd. Semiconductor laser
EP2645496A1 (de) * 2012-03-26 2013-10-02 Alcatel Lucent Abstimmbarer Wellenlängen-Halbleiterlaser
US9354394B2 (en) * 2012-05-11 2016-05-31 Oracle International Corporation Optical components having a common etch depth
US9158069B2 (en) * 2013-04-15 2015-10-13 Technion Research & Development Foundation Ltd. Charge-discharge electro-optical microring modulator
US11221446B2 (en) 2017-05-08 2022-01-11 Sony Corporation Laser device assembly
CN108683078B (zh) * 2018-06-21 2023-06-09 中国科学院福建物质结构研究所 一种波长可调谐的半导体激光器
WO2021043827A1 (en) * 2019-09-02 2021-03-11 Technische Universiteit Eindhoven Monolithically integrated inp electro-optically tuneable ring laser, a laser device as well as a corresponding method
CN112490850B (zh) * 2020-12-09 2023-04-07 海南师范大学 蓝光隧道结纳米环光放大器外延结构及放大器的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622671A (en) 1983-02-25 1986-11-11 At&T Bell Laboratories Multicavity optical device
JPS62287683A (ja) * 1986-06-06 1987-12-14 Nec Corp 光分岐半導体レ−ザ
JP2667255B2 (ja) * 1989-07-24 1997-10-27 日立電線株式会社 希土類元素添加ガラス導波路増幅器
IL96186A (en) 1989-11-20 1994-08-26 Hughes Aircraft Co Master oscillator power amplifier with interference isolated oscillator
US5327448A (en) 1992-03-30 1994-07-05 The Board Of Trustees Of The University Of Illinois Semiconductor devices and techniques for controlled optical confinement
US5398256A (en) 1993-05-10 1995-03-14 The United States Of America As Represented By The United States Department Of Energy Interferometric ring lasers and optical devices
US5548607A (en) 1994-06-08 1996-08-20 Lucent Technologies, Inc. Article comprising an integrated laser/modulator combination
US5742633A (en) 1996-10-02 1998-04-21 Yale University Asymmetric resonant optical cavity apparatus
EP1221069A1 (de) 1999-10-14 2002-07-10 Lambda Crossing Ltd Eine integrierte optische vorrichtung zur datenkommunikation

Also Published As

Publication number Publication date
US6885689B2 (en) 2005-04-26
EP1316129B1 (de) 2004-12-01
US20020037023A1 (en) 2002-03-28
WO2002021650A3 (en) 2002-08-15
AU2001288026A1 (en) 2002-03-22
IL154662A0 (en) 2003-09-17
WO2002021650A2 (en) 2002-03-14
DE60107581T2 (de) 2005-10-06
ATE284084T1 (de) 2004-12-15
CA2421657A1 (en) 2002-03-14
EP1316129A2 (de) 2003-06-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee