DE60045523D1 - VERFAHREN einer Kupferelektroplattierung mit VORBEHANDLUNG - Google Patents

VERFAHREN einer Kupferelektroplattierung mit VORBEHANDLUNG

Info

Publication number
DE60045523D1
DE60045523D1 DE60045523T DE60045523T DE60045523D1 DE 60045523 D1 DE60045523 D1 DE 60045523D1 DE 60045523 T DE60045523 T DE 60045523T DE 60045523 T DE60045523 T DE 60045523T DE 60045523 D1 DE60045523 D1 DE 60045523D1
Authority
DE
Germany
Prior art keywords
treatment
copper electroplating
electroplating
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60045523T
Other languages
English (en)
Inventor
Jyunnosuke Sekiguchi
Syunichiro Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Eneos Corp
Original Assignee
Nippon Mining and Metals Co Ltd
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd, Nippon Mining Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Application granted granted Critical
Publication of DE60045523D1 publication Critical patent/DE60045523D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
DE60045523T 2000-01-20 2000-05-26 VERFAHREN einer Kupferelektroplattierung mit VORBEHANDLUNG Expired - Lifetime DE60045523D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000011620 2000-01-20
JP2000042158A JP4394234B2 (ja) 2000-01-20 2000-02-21 銅電気めっき液及び銅電気めっき方法
PCT/JP2000/003394 WO2001053569A1 (en) 2000-01-20 2000-05-26 Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating

Publications (1)

Publication Number Publication Date
DE60045523D1 true DE60045523D1 (de) 2011-02-24

Family

ID=26583839

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60045523T Expired - Lifetime DE60045523D1 (de) 2000-01-20 2000-05-26 VERFAHREN einer Kupferelektroplattierung mit VORBEHANDLUNG

Country Status (10)

Country Link
US (1) US6562222B1 (de)
EP (2) EP1865093B1 (de)
JP (1) JP4394234B2 (de)
KR (1) KR100484351B1 (de)
CN (1) CN1190520C (de)
DE (1) DE60045523D1 (de)
IL (1) IL146345A0 (de)
MY (1) MY127269A (de)
TW (1) TW573072B (de)
WO (1) WO2001053569A1 (de)

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JP4076751B2 (ja) 2001-10-22 2008-04-16 日鉱金属株式会社 電気銅めっき方法、電気銅めっき用含リン銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
JP4011336B2 (ja) * 2001-12-07 2007-11-21 日鉱金属株式会社 電気銅めっき方法、電気銅めっき用純銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
JP4034095B2 (ja) * 2002-03-18 2008-01-16 日鉱金属株式会社 電気銅めっき方法及び電気銅めっき用含リン銅アノード
US6716771B2 (en) * 2002-04-09 2004-04-06 Intel Corporation Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface
JP3987069B2 (ja) * 2002-09-05 2007-10-03 日鉱金属株式会社 高純度硫酸銅及びその製造方法
KR100454270B1 (ko) * 2002-11-29 2004-10-26 엘지전선 주식회사 저조도 전해동박의 제조방법 및 전해동박
CN100526515C (zh) * 2002-12-18 2009-08-12 日矿金属株式会社 铜电解液和从该铜电解液制造出的电解铜箔
WO2004059040A1 (ja) * 2002-12-25 2004-07-15 Nikko Materials Co., Ltd. 特定骨格を有する四級アミン化合物重合体及び有機硫黄化合物を添加剤として含む銅電解液並びにそれにより製造される電解銅箔
CN100364061C (zh) * 2003-06-04 2008-01-23 花王株式会社 剥离剂组合物以及使用该剥离剂组合物的剥离洗涤方法
US7182849B2 (en) * 2004-02-27 2007-02-27 Taiwan Semiconducotr Manufacturing Co., Ltd. ECP polymer additives and method for reducing overburden and defects
TW200613586A (en) * 2004-07-22 2006-05-01 Rohm & Haas Elect Mat Leveler compounds
US20070004587A1 (en) * 2005-06-30 2007-01-04 Intel Corporation Method of forming metal on a substrate using a Ruthenium-based catalyst
EP1741804B1 (de) * 2005-07-08 2016-04-27 Rohm and Haas Electronic Materials, L.L.C. Procédé de dépôt électrolytique de cuivre
JP5659411B2 (ja) * 2006-01-27 2015-01-28 奥野製薬工業株式会社 含リン銅をアノードとする電解銅めっき液用添加剤、電解銅めっき液及び電解銅めっき方法
JP2009228078A (ja) * 2008-03-24 2009-10-08 Fujitsu Ltd 電解メッキ液、電解メッキ方法、および半導体装置の製造方法
WO2011036158A2 (en) * 2009-09-28 2011-03-31 Basf Se Wafer pretreatment for copper electroplating
JP2011179085A (ja) * 2010-03-02 2011-09-15 C Uyemura & Co Ltd 電気めっき用前処理剤、電気めっきの前処理方法及び電気めっき方法
WO2012043182A1 (ja) 2010-09-27 2012-04-05 Jx日鉱日石金属株式会社 プリント配線板用銅箔、その製造方法、プリント配線板用樹脂基板及びプリント配線板
JP2012092366A (ja) * 2010-10-25 2012-05-17 Imec 銅の電着方法
US8778462B2 (en) * 2011-11-10 2014-07-15 E I Du Pont De Nemours And Company Method for producing metalized fibrous composite sheet with olefin coating
US8741393B2 (en) 2011-12-28 2014-06-03 E I Du Pont De Nemours And Company Method for producing metalized fibrous composite sheet with olefin coating
US20130167461A1 (en) * 2011-12-28 2013-07-04 E. I. Du Pont De Nemours And Company Method for producing metalized fibrous composite sheet with olefin coating
CN102703938B (zh) * 2012-06-07 2015-04-22 上海交通大学 硫酸铜电镀液的应力消除剂
US9598787B2 (en) * 2013-03-14 2017-03-21 Rohm And Haas Electronic Materials Llc Method of filling through-holes
CN103436926A (zh) * 2013-08-19 2013-12-11 沈阳理工大学 一种硅烷偶联剂与金属镍离子共沉积的方法
JP5857310B2 (ja) * 2013-09-30 2016-02-10 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
CN105297083B (zh) * 2015-11-16 2018-11-02 泉州方寸新材料科技有限公司 一种冷轧板三价铬电镀镀液
CN105297084B (zh) * 2015-11-16 2018-11-02 泉州方寸新材料科技有限公司 一种冷轧板三价铬电镀方法
US10508357B2 (en) 2016-02-15 2019-12-17 Rohm And Haas Electronic Materials Llc Method of filling through-holes to reduce voids and other defects
US10512174B2 (en) 2016-02-15 2019-12-17 Rohm And Haas Electronic Materials Llc Method of filling through-holes to reduce voids and other defects

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JPS4120805B1 (de) * 1963-12-27 1966-12-05
JPS50104143A (de) * 1974-01-23 1975-08-16
GB1415129A (en) * 1974-07-03 1975-11-26 Orion Radio Production of bright copper electroplates
JPS5121529A (ja) * 1974-08-16 1976-02-20 Hitachi Ltd Pirorinsandometsukizeiseihimakuboshiho
US4376685A (en) * 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
US5174886A (en) * 1991-02-22 1992-12-29 Mcgean-Rohco, Inc. High-throw acid copper plating using inert electrolyte
JP2678701B2 (ja) * 1992-02-19 1997-11-17 石原薬品 株式会社 電気銅めっき液
JP3286744B2 (ja) * 1993-05-24 2002-05-27 奥野製薬工業株式会社 非導電性材料表面に電気めっき層を直接形成する方法
JP3263750B2 (ja) * 1993-12-08 2002-03-11 奥野製薬工業株式会社 酸性銅めっき浴及びこれを使用するめっき方法
JP3362512B2 (ja) * 1994-07-20 2003-01-07 株式会社デンソー 半導体ウエハのめっき方法およびめっき装置
JPH0839728A (ja) * 1994-07-27 1996-02-13 Sumitomo Metal Mining Co Ltd 金属張積層基板の製造方法
JPH08139452A (ja) * 1994-11-14 1996-05-31 Hitachi Ltd 多層配線基板の製造方法
JPH0978251A (ja) * 1995-09-13 1997-03-25 Hitachi Chem Co Ltd 無電解銅めっきの前処理液
EP0857402B1 (de) * 1996-08-23 2007-12-19 Nikko Materials USA, Inc. Flexibles hochleistungslaminat
DE19653681C2 (de) * 1996-12-13 2000-04-06 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Kupferschichten mit gleichmäßiger Schichtdicke und guten optischen und metallphysikalischen Eigenschaften und Anwendung des Verfahrens
US5863410A (en) * 1997-06-23 1999-01-26 Circuit Foil Usa, Inc. Process for the manufacture of high quality very low profile copper foil and copper foil produced thereby
US6270645B1 (en) 1997-09-26 2001-08-07 Circuit Foil Usa, Inc. Simplified process for production of roughened copper foil
US6270889B1 (en) * 1998-01-19 2001-08-07 Mitsui Mining & Smelting Co., Ltd. Making and using an ultra-thin copper foil
JP3276919B2 (ja) * 1998-03-06 2002-04-22 英夫 本間 樹脂基材への高密着性めっき方法およびこれに用いる銅めっき液
US6113771A (en) 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
CN103475577B (zh) * 2013-09-29 2017-02-08 小米科技有限责任公司 一种获得特征信息的方法、装置及网络设备

Also Published As

Publication number Publication date
EP1249517A1 (de) 2002-10-16
KR100484351B1 (ko) 2005-04-20
MY127269A (en) 2006-11-30
JP2001271196A (ja) 2001-10-02
EP1249517B1 (de) 2011-01-12
KR20020074195A (ko) 2002-09-28
TW573072B (en) 2004-01-21
WO2001053569A1 (en) 2001-07-26
IL146345A0 (en) 2002-07-25
EP1249517A4 (de) 2003-05-02
CN1190520C (zh) 2005-02-23
EP1865093A1 (de) 2007-12-12
EP1865093B1 (de) 2012-03-28
CN1370245A (zh) 2002-09-18
JP4394234B2 (ja) 2010-01-06
US6562222B1 (en) 2003-05-13

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