DE60044238D1 - Elektronisches bauteil auf basis von nanostrukturen - Google Patents
Elektronisches bauteil auf basis von nanostrukturenInfo
- Publication number
- DE60044238D1 DE60044238D1 DE60044238T DE60044238T DE60044238D1 DE 60044238 D1 DE60044238 D1 DE 60044238D1 DE 60044238 T DE60044238 T DE 60044238T DE 60044238 T DE60044238 T DE 60044238T DE 60044238 D1 DE60044238 D1 DE 60044238D1
- Authority
- DE
- Germany
- Prior art keywords
- disclosed
- pseudo
- nanotube
- nanomultivibrator
- nanoswitch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002086 nanomaterial Substances 0.000 title 1
- 239000002071 nanotube Substances 0.000 abstract 3
- 238000010276 construction Methods 0.000 abstract 1
- 239000000523 sample Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/18—Memory cell being a nanowire having RADIAL composition
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25350699A | 1999-02-22 | 1999-02-22 | |
PCT/US2000/004220 WO2000051186A1 (en) | 1999-02-22 | 2000-02-18 | Nanostructure device and apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60044238D1 true DE60044238D1 (de) | 2010-06-02 |
Family
ID=22960568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60044238T Expired - Lifetime DE60044238D1 (de) | 1999-02-22 | 2000-02-18 | Elektronisches bauteil auf basis von nanostrukturen |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1159761B1 (de) |
JP (2) | JP4039600B2 (de) |
KR (2) | KR100679547B1 (de) |
AT (1) | ATE465519T1 (de) |
DE (1) | DE60044238D1 (de) |
WO (1) | WO2000051186A1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2224508B1 (de) | 1999-07-02 | 2016-01-06 | President and Fellows of Harvard College | Verfahren zum Trennen von metallischen und halbleitenden nanoskopischen Drähten |
WO2002003482A1 (de) * | 2000-07-04 | 2002-01-10 | Infineon Technologies Ag | Feldeffekttransistor |
DE10036897C1 (de) | 2000-07-28 | 2002-01-03 | Infineon Technologies Ag | Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors |
US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
KR20030055346A (ko) | 2000-12-11 | 2003-07-02 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | 나노센서 |
JP4676073B2 (ja) * | 2001-02-13 | 2011-04-27 | エスアイアイ・ナノテクノロジー株式会社 | マスクの白欠陥修正方法 |
CA2447728A1 (en) * | 2001-05-18 | 2003-01-16 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
JP2004537174A (ja) * | 2001-07-26 | 2004-12-09 | テクニシェ ユニヴェルシテイト デルフト | カーボンナノチューブを利用した電子デバイス |
EP2261173A1 (de) | 2001-11-20 | 2010-12-15 | Wm. Marsh Rice University | Gerät beschichteter zusammengebundenen Fullerene |
US6891227B2 (en) * | 2002-03-20 | 2005-05-10 | International Business Machines Corporation | Self-aligned nanotube field effect transistor and method of fabricating same |
JP3522261B2 (ja) * | 2002-04-18 | 2004-04-26 | 日本電気株式会社 | ナノチューブ、近接場光検出装置および近接場光検出方法 |
CN1650433B (zh) | 2002-05-02 | 2010-08-04 | 理想星株式会社 | 线状元件及其制造方法 |
AU2003304249A1 (en) * | 2002-11-19 | 2005-01-13 | William Marsh Rice University | Method for creating a functional interface between a nanoparticle, nanotube or nanowire, and a biological molecule or system |
US7253014B2 (en) | 2002-11-19 | 2007-08-07 | William Marsh Rice University | Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission |
JP2004235618A (ja) * | 2003-01-10 | 2004-08-19 | Sanyo Electric Co Ltd | カーボンナノチューブを用いた配線、単一電子トランジスタおよびキャパシタ |
EP1508926A1 (de) * | 2003-08-19 | 2005-02-23 | Hitachi, Ltd. | Nanoröhren-Transistor |
DE102004003374A1 (de) * | 2004-01-22 | 2005-08-25 | Infineon Technologies Ag | Halbleiter-Leistungsschalter sowie dafür geeignetes Herstellungsverfahren |
FR2868201B1 (fr) | 2004-03-23 | 2007-06-29 | Ecole Polytechnique Dgar | Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede |
KR101100887B1 (ko) * | 2005-03-17 | 2012-01-02 | 삼성전자주식회사 | 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법 |
JP2009540333A (ja) | 2006-06-12 | 2009-11-19 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | ナノセンサーおよび関連技術 |
US8058640B2 (en) | 2006-09-11 | 2011-11-15 | President And Fellows Of Harvard College | Branched nanoscale wires |
EP2095100B1 (de) | 2006-11-22 | 2016-09-21 | President and Fellows of Harvard College | Verfahren zum Betreiben eines Nanodraht-Feldeffekttransistorsensors |
US20110089400A1 (en) * | 2008-04-15 | 2011-04-21 | Qunano Ab | Nanowire wrap gate devices |
US8166819B2 (en) * | 2008-07-24 | 2012-05-01 | Northrop Grumman Systems Corporation | Standing wave field induced force |
US20120135158A1 (en) | 2009-05-26 | 2012-05-31 | Sharp Kabushiki Kaisha | Methods and systems for electric field deposition of nanowires and other devices |
DE102009040916B4 (de) | 2009-09-11 | 2013-01-17 | Marko Behrens | Faltbecher |
WO2011038228A1 (en) | 2009-09-24 | 2011-03-31 | President And Fellows Of Harvard College | Bent nanowires and related probing of species |
KR101123958B1 (ko) * | 2010-04-02 | 2012-03-23 | 서울시립대학교 산학협력단 | 그래핀과 전도체 선들을 이용한 나노 트랜지스터 |
CN107564946A (zh) * | 2016-07-01 | 2018-01-09 | 清华大学 | 纳米晶体管 |
CN107564947A (zh) * | 2016-07-01 | 2018-01-09 | 清华大学 | 纳米异质结构 |
CN107564917B (zh) * | 2016-07-01 | 2020-06-09 | 清华大学 | 纳米异质结构 |
CN107564910B (zh) * | 2016-07-01 | 2020-08-11 | 清华大学 | 半导体器件 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62160688A (ja) * | 1986-01-08 | 1987-07-16 | 株式会社東芝 | 誘導加熱調理器 |
AT390739B (de) * | 1988-11-03 | 1990-06-25 | Ewald Dipl Ing Dr Benes | Verfahren und einrichtung zur separation von teilchen, welche in einem dispersionsmittel dispergiert sind |
JPH04329836A (ja) * | 1991-04-30 | 1992-11-18 | Daiki Alum Kogyosho:Kk | アルミニウムスクラップの前処理方法 |
JPH07118270B2 (ja) * | 1993-10-25 | 1995-12-18 | 日本電気株式会社 | カーボンナノチューブトランジスタ |
DE69417772T2 (de) * | 1994-08-27 | 1999-12-02 | Ibm | Feineinstellungsapparat mit atomarer auflösung |
JP2700058B2 (ja) * | 1996-01-23 | 1998-01-19 | 工業技術院長 | 超音波を用いた非接触マイクロマニピュレーション方法 |
JP2000516708A (ja) * | 1996-08-08 | 2000-12-12 | ウィリアム・マーシュ・ライス・ユニバーシティ | ナノチューブ組立体から作製された巨視的操作可能なナノ規模の装置 |
KR100277881B1 (ko) * | 1998-06-16 | 2001-02-01 | 김영환 | 트랜지스터 |
-
2000
- 2000-02-18 EP EP00913530A patent/EP1159761B1/de not_active Expired - Lifetime
- 2000-02-18 JP JP2000601693A patent/JP4039600B2/ja not_active Expired - Fee Related
- 2000-02-18 AT AT00913530T patent/ATE465519T1/de not_active IP Right Cessation
- 2000-02-18 WO PCT/US2000/004220 patent/WO2000051186A1/en not_active Application Discontinuation
- 2000-02-18 DE DE60044238T patent/DE60044238D1/de not_active Expired - Lifetime
- 2000-02-18 KR KR1020017009805A patent/KR100679547B1/ko not_active IP Right Cessation
- 2000-02-18 KR KR1020047008565A patent/KR100636951B1/ko not_active IP Right Cessation
-
2006
- 2006-03-08 JP JP2006063385A patent/JP4512054B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4512054B2 (ja) | 2010-07-28 |
KR20020001730A (ko) | 2002-01-09 |
EP1159761A1 (de) | 2001-12-05 |
ATE465519T1 (de) | 2010-05-15 |
WO2000051186A1 (en) | 2000-08-31 |
EP1159761A4 (de) | 2006-04-19 |
KR100679547B1 (ko) | 2007-02-07 |
JP4039600B2 (ja) | 2008-01-30 |
EP1159761B1 (de) | 2010-04-21 |
JP2002538606A (ja) | 2002-11-12 |
JP2006231513A (ja) | 2006-09-07 |
KR20040062667A (ko) | 2004-07-07 |
KR100636951B1 (ko) | 2006-10-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8328 | Change in the person/name/address of the agent |
Representative=s name: HEYER, V., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 806 |
|
8364 | No opposition during term of opposition |