DE60036520D1 - Herstellungsverfahren für ein einen feldeffekttransistor beinhaltendes halbleiterbauteil - Google Patents
Herstellungsverfahren für ein einen feldeffekttransistor beinhaltendes halbleiterbauteilInfo
- Publication number
- DE60036520D1 DE60036520D1 DE60036520T DE60036520T DE60036520D1 DE 60036520 D1 DE60036520 D1 DE 60036520D1 DE 60036520 T DE60036520 T DE 60036520T DE 60036520 T DE60036520 T DE 60036520T DE 60036520 D1 DE60036520 D1 DE 60036520D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- field effect
- effect transistor
- semiconductor component
- containing semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99201329 | 1999-04-28 | ||
EP99201329 | 1999-04-28 | ||
PCT/EP2000/003410 WO2000067309A1 (en) | 1999-04-28 | 2000-04-14 | Method of manufacturing a semiconductor device comprising a field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60036520D1 true DE60036520D1 (de) | 2007-11-08 |
DE60036520T2 DE60036520T2 (de) | 2008-06-26 |
Family
ID=8240159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60036520T Expired - Lifetime DE60036520T2 (de) | 1999-04-28 | 2000-04-14 | Herstellungsverfahren für ein einen feldeffekttransistor beinhaltendes halbleiterbauteil |
Country Status (7)
Country | Link |
---|---|
US (1) | US6177314B1 (de) |
EP (1) | EP1093667B1 (de) |
JP (1) | JP2002543614A (de) |
KR (1) | KR100618058B1 (de) |
DE (1) | DE60036520T2 (de) |
TW (1) | TW479364B (de) |
WO (1) | WO2000067309A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW449919B (en) * | 1998-12-18 | 2001-08-11 | Koninkl Philips Electronics Nv | A method of manufacturing a semiconductor device |
GB0022149D0 (en) * | 2000-09-09 | 2000-10-25 | Zetex Plc | Implantation method |
US6284610B1 (en) * | 2000-09-21 | 2001-09-04 | Chartered Semiconductor Manufacturing Ltd. | Method to reduce compressive stress in the silicon substrate during silicidation |
KR100866111B1 (ko) * | 2002-06-28 | 2008-10-30 | 매그나칩 반도체 유한회사 | 다마신공정을 이용하여 게이트전극의 저항을 감소시키는반도체 소자의 제조방법 |
JP4841123B2 (ja) * | 2004-07-28 | 2011-12-21 | パナソニック株式会社 | 半導体記憶装置及びその製造方法 |
JP5076548B2 (ja) | 2007-02-22 | 2012-11-21 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
US7790534B2 (en) * | 2007-06-15 | 2010-09-07 | Sandisk 3D Llc | Method to form low-defect polycrystalline semiconductor material for use in a transistor |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4635344A (en) * | 1984-08-20 | 1987-01-13 | Texas Instruments Incorporated | Method of low encroachment oxide isolation of a semiconductor device |
JP2638411B2 (ja) * | 1992-11-27 | 1997-08-06 | 日本電気株式会社 | Mos型半導体装置の製造方法 |
KR950034830A (ko) * | 1994-04-29 | 1995-12-28 | 빈센트 비. 인그라시아 | 전계 효과 트랜지스터 및 이 트랜지스터의 제조 방법 |
JP3173760B2 (ja) * | 1994-11-11 | 2001-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH0982958A (ja) * | 1995-09-19 | 1997-03-28 | Matsushita Electric Ind Co Ltd | Mos型半導体装置およびその製造方法 |
JPH09148542A (ja) * | 1995-11-17 | 1997-06-06 | Sharp Corp | 半導体記憶装置及びその製造方法 |
JPH09172171A (ja) * | 1995-12-20 | 1997-06-30 | Nec Corp | 半導体装置の製造方法 |
TW347567B (en) * | 1996-03-22 | 1998-12-11 | Philips Eloctronics N V | Semiconductor device and method of manufacturing a semiconductor device |
US5753557A (en) * | 1996-10-07 | 1998-05-19 | Vanguard International Semiconductor Company | Bridge-free self aligned silicide process |
JPH11135788A (ja) * | 1997-10-27 | 1999-05-21 | Ricoh Co Ltd | 半導体装置の製造方法 |
-
2000
- 2000-02-15 TW TW089102499A patent/TW479364B/zh not_active IP Right Cessation
- 2000-04-14 KR KR1020007014877A patent/KR100618058B1/ko not_active IP Right Cessation
- 2000-04-14 EP EP00922638A patent/EP1093667B1/de not_active Expired - Lifetime
- 2000-04-14 JP JP2000616059A patent/JP2002543614A/ja active Pending
- 2000-04-14 DE DE60036520T patent/DE60036520T2/de not_active Expired - Lifetime
- 2000-04-14 WO PCT/EP2000/003410 patent/WO2000067309A1/en active IP Right Grant
- 2000-04-27 US US09/561,509 patent/US6177314B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100618058B1 (ko) | 2006-08-30 |
US6177314B1 (en) | 2001-01-23 |
EP1093667B1 (de) | 2007-09-26 |
JP2002543614A (ja) | 2002-12-17 |
DE60036520T2 (de) | 2008-06-26 |
EP1093667A1 (de) | 2001-04-25 |
KR20010071624A (ko) | 2001-07-28 |
TW479364B (en) | 2002-03-11 |
WO2000067309A1 (en) | 2000-11-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69939895D1 (de) | Herstellungsverfahren für ein halbleiterbauelement | |
DE69832324D1 (de) | Herstellungsverfahren für einen Halbleiter | |
DE60042028D1 (de) | Herstellungsverfahren für einen farbfilter | |
DE60325039D1 (de) | Herstellungsverfahren für einen halbleiterwafer und wafer | |
DE60227481D1 (de) | Herstellungsverfahren für komplementäre Transistoren | |
DE60143761D1 (de) | Herstellungsverfahren für einen siliziumwafer | |
NO994814L (no) | FremgangsmÕte for tilvirkning av en halvlederkomponent | |
DE60044221D1 (de) | Lumineszierendes Halbleiterelement und Verfahren zu dessen Herstellung | |
DE60141055D1 (de) | Push-Planung für Halbleiterfertigung | |
DE60045755D1 (de) | Halbleiterbauelement und dessen Herstellungsverfahren | |
DE60134954D1 (de) | Produktionanordnung für Halbleiter | |
DE69834280D1 (de) | Herstellungsverfahren für einen rückstrahlenden Gegenstand | |
DE60037707D1 (de) | Herstellungsverfahren für dünnfilmtransistoren | |
DE60220736D1 (de) | Herstellungsverfahren für gebondetes Substrat | |
DE60044969D1 (de) | Herstellungsverfahren einer integrierten schaltung | |
DE69518684D1 (de) | Herstellungsverfahren für ein Feldeffekt-Halbleiterbauelement | |
DE60037559D1 (de) | Herstellungsverfahren für ein Halbleiter-Bauelement | |
DE60236944D1 (de) | Herstellungsverfahren für einen anneal-wafer | |
DE60238952D1 (de) | Halbleiteranordnungsherstellungsmethode | |
DE69826865D1 (de) | Herstellungsverfahren für verkapselte halbleiteranordnungen | |
DE50312208D1 (de) | Herstellungsverfahren für eine halbleiterstruktur | |
DE60036520D1 (de) | Herstellungsverfahren für ein einen feldeffekttransistor beinhaltendes halbleiterbauteil | |
DE60037599D1 (de) | Herstellungsverfahren für halbleiteranordnung mit reduzierter signalwegverzögerungszeit | |
DE60217977D1 (de) | Halbleiterwafer und verfahren zu dessen herstellung | |
DE602004024579D1 (de) | Herstellungsverfahren für einen siliziumwafer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |