DE60035660D1 - Photoelektrische Umwandlungsvorrichtung und Herstellungsverfahren - Google Patents

Photoelektrische Umwandlungsvorrichtung und Herstellungsverfahren

Info

Publication number
DE60035660D1
DE60035660D1 DE60035660T DE60035660T DE60035660D1 DE 60035660 D1 DE60035660 D1 DE 60035660D1 DE 60035660 T DE60035660 T DE 60035660T DE 60035660 T DE60035660 T DE 60035660T DE 60035660 D1 DE60035660 D1 DE 60035660D1
Authority
DE
Germany
Prior art keywords
photoelectric conversion
conversion device
manufacturing
charge transfer
transfer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60035660T
Other languages
English (en)
Other versions
DE60035660T2 (de
Inventor
Jiro Tsukahara
Kentaro Shiratsuchi
Tadahiko Kubota
Syoichi Sen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of DE60035660D1 publication Critical patent/DE60035660D1/de
Publication of DE60035660T2 publication Critical patent/DE60035660T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/361—Polynuclear complexes, i.e. complexes comprising two or more metal centers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/652—Cyanine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
  • Light Receiving Elements (AREA)
DE60035660T 1999-12-10 2000-12-08 Photoelektrische Umwandlungsvorrichtung und Herstellungsverfahren Expired - Lifetime DE60035660T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP35183899 1999-12-10
JP35183899 1999-12-10
JP2000259216 2000-08-29
JP2000259216A JP4307701B2 (ja) 1999-12-10 2000-08-29 光電変換素子および光電池

Publications (2)

Publication Number Publication Date
DE60035660D1 true DE60035660D1 (de) 2007-09-06
DE60035660T2 DE60035660T2 (de) 2007-12-27

Family

ID=26579492

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60035660T Expired - Lifetime DE60035660T2 (de) 1999-12-10 2000-12-08 Photoelektrische Umwandlungsvorrichtung und Herstellungsverfahren

Country Status (4)

Country Link
EP (1) EP1107333B1 (de)
JP (1) JP4307701B2 (de)
AT (1) ATE368304T1 (de)
DE (1) DE60035660T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4643792B2 (ja) * 2000-03-31 2011-03-02 富士フイルム株式会社 光電変換素子及び光電気化学電池
JP4982641B2 (ja) * 2000-04-12 2012-07-25 株式会社林原 半導体層、これを用いる太陽電池、及びそれらの製造方法並びに用途
NL1020701C2 (nl) * 2002-05-29 2003-12-02 Stichting Energie Werkwijze en inrichting voor het op een laag van een nanokristallijn eerste materiaal aanbrengen van een laag van een tweede materiaal.
EP1550742A4 (de) * 2002-10-10 2007-01-03 Kansai Paint Co Ltd Verfahren zur herstellung eines halbleiterfilms und verwendung von halbleiterfilm
JP5391981B2 (ja) 2009-02-02 2014-01-15 富士通株式会社 回路基板とその製造方法、及び抵抗素子
CN103038935B (zh) * 2010-07-27 2016-03-23 岛根县 防止催化剂从色素增感太阳电池及催化剂电极溶解析出的方法
CA2808849A1 (en) * 2010-08-20 2012-02-23 Rhodia Operations Polymer compositions, polymer films, polymer gels, polymer foams, and electronic devices containing such films, gels, and foams
JP2012195280A (ja) * 2011-03-02 2012-10-11 Sony Corp 光電変換素子、光電変換素子の製造方法、電子機器および建築物
JP5673344B2 (ja) * 2011-05-19 2015-02-18 コニカミノルタ株式会社 色素増感太陽電池
CN104272485B (zh) * 2012-05-10 2018-11-16 默克专利有限公司 用于电子传输层中的包含离子有机化合物的配制剂
CN105474338A (zh) * 2013-08-26 2016-04-06 日本瑞翁株式会社 光发电器件及其制造方法
WO2015137324A1 (ja) 2014-03-14 2015-09-17 東京応化工業株式会社 結晶成長制御剤、ｐ型半導体微粒子又はｐ型半導体微粒子膜の形成方法、正孔輸送層形成用組成物、及び太陽電池
KR101985996B1 (ko) * 2016-03-10 2019-06-05 인하대학교 산학협력단 티오시안산구리(CuSCN) 정공수송체 층 및 이의 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11144773A (ja) * 1997-09-05 1999-05-28 Fuji Photo Film Co Ltd 光電変換素子および光再生型光電気化学電池

Also Published As

Publication number Publication date
JP4307701B2 (ja) 2009-08-05
DE60035660T2 (de) 2007-12-27
ATE368304T1 (de) 2007-08-15
EP1107333A2 (de) 2001-06-13
EP1107333B1 (de) 2007-07-25
JP2001230435A (ja) 2001-08-24
EP1107333A3 (de) 2005-01-05

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