DE60020624D1 - Ferroelektrischer Speicher - Google Patents

Ferroelektrischer Speicher

Info

Publication number
DE60020624D1
DE60020624D1 DE60020624T DE60020624T DE60020624D1 DE 60020624 D1 DE60020624 D1 DE 60020624D1 DE 60020624 T DE60020624 T DE 60020624T DE 60020624 T DE60020624 T DE 60020624T DE 60020624 D1 DE60020624 D1 DE 60020624D1
Authority
DE
Germany
Prior art keywords
ferroelectric storage
ferroelectric
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60020624T
Other languages
English (en)
Other versions
DE60020624T2 (de
Inventor
Hidehiko Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60020624D1 publication Critical patent/DE60020624D1/de
Publication of DE60020624T2 publication Critical patent/DE60020624T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE60020624T 1999-02-19 2000-02-15 Ferroelektrischer Speicher Expired - Lifetime DE60020624T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4138999 1999-02-19
JP04138999A JP3604576B2 (ja) 1999-02-19 1999-02-19 強誘電体メモリ装置

Publications (2)

Publication Number Publication Date
DE60020624D1 true DE60020624D1 (de) 2005-07-14
DE60020624T2 DE60020624T2 (de) 2006-05-04

Family

ID=12607033

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60020624T Expired - Lifetime DE60020624T2 (de) 1999-02-19 2000-02-15 Ferroelektrischer Speicher

Country Status (5)

Country Link
US (1) US6198653B1 (de)
EP (1) EP1030312B1 (de)
JP (1) JP3604576B2 (de)
KR (1) KR100341621B1 (de)
DE (1) DE60020624T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3617615B2 (ja) * 1999-11-08 2005-02-09 シャープ株式会社 強誘電体記憶装置
JP2001319472A (ja) 2000-05-10 2001-11-16 Toshiba Corp 半導体記憶装置
JP3606233B2 (ja) * 2000-06-29 2005-01-05 セイコーエプソン株式会社 半導体集積回路、その半導体集積回路を多数備えた半導体装置、及びその半導体装置を用いた電子機器
JP3992449B2 (ja) * 2001-03-29 2007-10-17 富士通株式会社 半導体記憶装置
US6590798B1 (en) * 2002-05-08 2003-07-08 Texas Instruments Incorporated Apparatus and methods for imprint reduction for ferroelectric memory cell
US6757206B2 (en) * 2002-09-17 2004-06-29 Texas Instruments Incorporated Sense amplifier with override write circuitry
JP3917604B2 (ja) * 2004-05-17 2007-05-23 株式会社東芝 半導体記憶装置
US7088605B2 (en) * 2004-07-02 2006-08-08 Macronix International Co., Ltd. FeRAM memory design using ROM array architecture
CN114695364A (zh) * 2020-12-28 2022-07-01 光华临港工程应用技术研发(上海)有限公司 一种记忆装置及制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
JPH088339B2 (ja) 1988-10-19 1996-01-29 株式会社東芝 半導体メモリ
JP3189540B2 (ja) 1992-12-02 2001-07-16 松下電器産業株式会社 半導体メモリ装置
JP2953316B2 (ja) 1994-08-12 1999-09-27 日本電気株式会社 不揮発性強誘電体メモリ
JPH0997496A (ja) * 1995-09-29 1997-04-08 Nec Corp 強誘電体メモリ装置及びデータ読出方法
KR0184507B1 (ko) * 1996-05-16 1999-04-15 김광호 임프린트 보상회로를 가지는 강유전체 커패시터 반도체 메모리 장치
KR100224673B1 (ko) * 1996-12-13 1999-10-15 윤종용 불휘발성 강유전체 메모리장치 및 그의 구동방법
JPH10270654A (ja) * 1997-03-27 1998-10-09 Toshiba Corp 半導体記憶装置
JP3487753B2 (ja) * 1998-02-24 2004-01-19 シャープ株式会社 半導体記憶装置
JP3717097B2 (ja) * 1998-07-29 2005-11-16 富士通株式会社 強誘電体メモリ

Also Published As

Publication number Publication date
EP1030312B1 (de) 2005-06-08
EP1030312A2 (de) 2000-08-23
DE60020624T2 (de) 2006-05-04
EP1030312A3 (de) 2000-09-13
KR20000058108A (ko) 2000-09-25
JP3604576B2 (ja) 2004-12-22
JP2000243091A (ja) 2000-09-08
KR100341621B1 (ko) 2002-06-22
US6198653B1 (en) 2001-03-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition