DE60015052D1 - Halbleiter Leistungsumwandlungsvorrichtung - Google Patents

Halbleiter Leistungsumwandlungsvorrichtung

Info

Publication number
DE60015052D1
DE60015052D1 DE60015052T DE60015052T DE60015052D1 DE 60015052 D1 DE60015052 D1 DE 60015052D1 DE 60015052 T DE60015052 T DE 60015052T DE 60015052 T DE60015052 T DE 60015052T DE 60015052 D1 DE60015052 D1 DE 60015052D1
Authority
DE
Germany
Prior art keywords
power conversion
conversion device
semiconductor power
semiconductor
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60015052T
Other languages
English (en)
Other versions
DE60015052T2 (de
Inventor
Hiromitsu Sakai
Hidetoshi Aizawa
Shuji Katoh
Ryuji Iyotani
Masahiro Nagasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE60015052D1 publication Critical patent/DE60015052D1/de
Publication of DE60015052T2 publication Critical patent/DE60015052T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
DE60015052T 1999-11-05 2000-08-17 Halbleiter-Leistungswandlungsvorrichtung Expired - Lifetime DE60015052T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31473499A JP3770008B2 (ja) 1999-11-05 1999-11-05 半導体電力変換装置
JP31473499 1999-11-05

Publications (2)

Publication Number Publication Date
DE60015052D1 true DE60015052D1 (de) 2004-11-25
DE60015052T2 DE60015052T2 (de) 2005-08-25

Family

ID=18056945

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60015052T Expired - Lifetime DE60015052T2 (de) 1999-11-05 2000-08-17 Halbleiter-Leistungswandlungsvorrichtung

Country Status (4)

Country Link
US (2) US6242968B1 (de)
EP (1) EP1098428B1 (de)
JP (1) JP3770008B2 (de)
DE (1) DE60015052T2 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6473284B1 (en) * 2000-09-06 2002-10-29 General Electric Company Low-power dc-to-dc converter having high overvoltage protection
SE519790C2 (sv) * 2001-08-09 2003-04-08 Abb Ab Elektrisk anordning och förfarande för begränsande av toppspänningen över en likriktarkomponent
JP2003102180A (ja) * 2001-09-21 2003-04-04 Hitachi Ltd 電車用モジュール形インバータ装置
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
JP3997905B2 (ja) * 2002-12-06 2007-10-24 日産自動車株式会社 電圧駆動素子の駆動回路
JP2004228768A (ja) * 2003-01-21 2004-08-12 Toshiba Corp ゲート駆動回路
JP4069022B2 (ja) * 2003-06-12 2008-03-26 三菱電機株式会社 電力用半導体装置
JP4659826B2 (ja) 2004-06-23 2011-03-30 ペレグリン セミコンダクター コーポレーション Ｒｆフロントエンド集積回路
JP2006042564A (ja) * 2004-07-30 2006-02-09 Tokyo Electric Power Co Inc:The 電力スイッチング回路、電力変換装置及び電力用半導体スイッチング素子の駆動方法
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
JP2007028278A (ja) * 2005-07-19 2007-02-01 Denso Corp 駆動回路
JP4727360B2 (ja) * 2005-09-20 2011-07-20 東芝三菱電機産業システム株式会社 絶縁ゲート型半導体素子のゲート回路
CN100495881C (zh) * 2005-12-21 2009-06-03 昂宝电子（上海）有限公司 用于驱动双极晶体管的***和用于控制电源变换器的***
CN101079576B (zh) * 2006-05-24 2010-04-07 昂宝电子（上海）有限公司 用于提供对电源调节器的开关的***
KR20080041410A (ko) * 2006-11-07 2008-05-13 삼성에스디아이 주식회사 플라즈마 표시 장치, 그 구동 장치 및 그 스위칭 소자
JP4762929B2 (ja) 2007-02-14 2011-08-31 トヨタ自動車株式会社 半導体電力変換装置
US7960772B2 (en) * 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US7812647B2 (en) * 2007-05-21 2010-10-12 Advanced Analogic Technologies, Inc. MOSFET gate drive with reduced power loss
EP2568608B1 (de) 2008-02-28 2014-05-14 Peregrine Semiconductor Corporation Verfahren und Vorrichtung zur Verwendung beim digitalen Abstimmen eines Kondensators in einer integrierten Schaltungsvorrichtung
US8519751B2 (en) * 2009-09-15 2013-08-27 Mitsubishi Electric Corporation Gate drive circuit
JP5627316B2 (ja) * 2010-06-28 2014-11-19 株式会社東芝 電力変換装置および半導体スイッチング素子の制御回路
EP2724453B1 (de) * 2011-06-27 2015-08-26 ABB Technology AG Stromversorgung zur steuerung eines leistungsschalters
US20130049843A1 (en) * 2011-08-26 2013-02-28 Mari Curbelo Alvaro Jorge Reverse conduction mode self turn-off gate driver
JP2013099123A (ja) * 2011-11-01 2013-05-20 Sanken Electric Co Ltd ゲート駆動回路
US9203393B2 (en) * 2012-08-30 2015-12-01 Denso Corporation Semiconductor apparatus
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236798A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Methods for Increasing RF Throughput Via Usage of Tunable Filters
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9449346B1 (en) 2014-05-21 2016-09-20 Plaid Technologies, Inc. System and method for programmatically accessing financial data
DE102015102878B4 (de) * 2015-02-27 2023-03-30 Infineon Technologies Austria Ag Elektronische Ansteuerschaltung
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US10305362B2 (en) * 2016-06-28 2019-05-28 Fuji Electric Co., Ltd. Semiconductor device
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10756726B2 (en) * 2018-10-01 2020-08-25 Texas Instruments Incorporated Systems with power transistors, transistors coupled to the gates of the power transistors, and capacitive dividers coupled to the power transistors
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch
WO2022200819A1 (ja) * 2021-03-22 2022-09-29 日産自動車株式会社 駆動回路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303841A (en) * 1979-05-21 1981-12-01 Exxon Research & Engineering Co. VMOS/Bipolar power switch
DE4236334A1 (de) * 1992-10-28 1994-05-05 Bosch Gmbh Robert Monolithisch integriertes MOS-Endstufenbauteil mit einer Überlast-Schutzeinrichtung
JPH06209580A (ja) * 1993-01-07 1994-07-26 Fuji Electric Co Ltd 電力変換装置のスナバエネルギー回収回路
JPH0767320A (ja) * 1993-08-25 1995-03-10 Toshiba Fa Syst Eng Kk 電力素子の駆動回路
DE19507408A1 (de) * 1995-03-03 1996-09-05 Kiepe Bahn Elektrik Gmbh Schaltungsanordnung zur Begrenzung von Schaltüberspannungen an Leistungshalbleiterschaltern
EP0814564A1 (de) * 1996-06-20 1997-12-29 ANSALDO INDUSTRIA S.p.A. Elektronischer Schaltkreis mit reduzierten Schalttransienten
JPH11178318A (ja) * 1997-12-04 1999-07-02 Toshiba Corp 電圧駆動型電力素子の駆動回路
JP3383570B2 (ja) * 1998-03-10 2003-03-04 株式会社東芝 電圧駆動型電力素子の駆動装置

Also Published As

Publication number Publication date
DE60015052T2 (de) 2005-08-25
JP3770008B2 (ja) 2006-04-26
US20010015670A1 (en) 2001-08-23
JP2001136732A (ja) 2001-05-18
US6242968B1 (en) 2001-06-05
EP1098428A2 (de) 2001-05-09
EP1098428B1 (de) 2004-10-20
EP1098428A3 (de) 2002-01-02
US6380796B2 (en) 2002-04-30

Similar Documents

Publication Publication Date Title
DE60015052D1 (de) Halbleiter Leistungsumwandlungsvorrichtung
DE69937203D1 (de) Stromwandlervorrichtung
DE59912676D1 (de) Leistungshalbleitermodul
DE60016654D1 (de) Photovoltaische Leistungserzeugungsvorrichtung
DE69819074D1 (de) Leistungswandlervorrichtung
DE69943196D1 (de) Halbleiter-Leistungs-Modul
DE69943141D1 (de) Photovoltaische Leistungserzeugungsvorrichtung
DE60118161D1 (de) Stromwandler
DE60025865D1 (de) Halbleitervorrichtung und elektrische Stromwandlungsvorrichtung
DE69922866D1 (de) Sonnenenergieerzeugungsanlage
TW460083U (en) Power conversion device
DE10362232B8 (de) Leistungshalbleitervorrichtung
DE69937739D1 (de) Halbleitervorrichtung
DE19981515D2 (de) Photovoltaikeinrichtung
DE60035580D1 (de) Halbleiter
DE60044009D1 (de) Leistungsumrichter
DE60005959D1 (de) Halbleiteranordnung
DE50004627D1 (de) Leistungshalbleiter-Modul
DE50013161D1 (de) Leistungshalbleitermodul
EP1292027A4 (de) Leistungshalbleiter-bauelement
DE60023399D1 (de) Stromversorgungsgerät
DE60103580D1 (de) Stromversorgungsgerät
DE60032651D1 (de) Halbleitermodul
DE60019144D1 (de) Halbleitervorrichtung
DE50113060D1 (de) Halbleiter-leistungsbauelement

Legal Events

Date Code Title Description
8364 No opposition during term of opposition