DE60006713D1 - Verfahren zum steuern des wachstums eines halbleiterkristalls - Google Patents
Verfahren zum steuern des wachstums eines halbleiterkristallsInfo
- Publication number
- DE60006713D1 DE60006713D1 DE60006713T DE60006713T DE60006713D1 DE 60006713 D1 DE60006713 D1 DE 60006713D1 DE 60006713 T DE60006713 T DE 60006713T DE 60006713 T DE60006713 T DE 60006713T DE 60006713 D1 DE60006713 D1 DE 60006713D1
- Authority
- DE
- Germany
- Prior art keywords
- growth
- controlling
- semiconductor crystal
- crystal
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US421187 | 1999-10-19 | ||
US09/421,187 US6203611B1 (en) | 1999-10-19 | 1999-10-19 | Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth |
PCT/US2000/025897 WO2001029292A1 (en) | 1999-10-19 | 2000-09-21 | Method of controlling growth of a semiconductor crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60006713D1 true DE60006713D1 (de) | 2003-12-24 |
DE60006713T2 DE60006713T2 (de) | 2004-08-12 |
Family
ID=23669527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60006713T Expired - Fee Related DE60006713T2 (de) | 1999-10-19 | 2000-09-21 | Verfahren zum steuern des wachstums eines halbleiterkristalls |
Country Status (6)
Country | Link |
---|---|
US (1) | US6203611B1 (de) |
EP (1) | EP1230447B1 (de) |
JP (1) | JP2003512282A (de) |
KR (1) | KR20020059631A (de) |
DE (1) | DE60006713T2 (de) |
WO (1) | WO2001029292A1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3572998B2 (ja) * | 1999-06-04 | 2004-10-06 | 三菱住友シリコン株式会社 | 単結晶シリコンの製造方法 |
US20030033972A1 (en) * | 2001-08-15 | 2003-02-20 | Memc Electronic Materials, Inc. | Controlled crown growth process for czochralski single crystal silicon |
KR100700082B1 (ko) * | 2005-06-14 | 2007-03-28 | 주식회사 실트론 | 결정 성장된 잉곳의 품질평가 방법 |
JP4918897B2 (ja) * | 2007-08-29 | 2012-04-18 | 株式会社Sumco | シリコン単結晶引上方法 |
US8221545B2 (en) * | 2008-07-31 | 2012-07-17 | Sumco Phoenix Corporation | Procedure for in-situ determination of thermal gradients at the crystal growth front |
US8012255B2 (en) | 2008-07-31 | 2011-09-06 | Sumco Phoenix Corporation | Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process |
US20100024717A1 (en) * | 2008-07-31 | 2010-02-04 | Benno Orschel | Reversed action diameter control in a semiconductor crystal growth system |
ES2425885T3 (es) * | 2008-08-18 | 2013-10-17 | Max Era, Inc. | Procedimiento y aparato para el desarrollo de una cinta cristalina mientras se controla el transporte de contaminantes en suspensión en un gas a través de una superficie de cinta |
CN101748477B (zh) * | 2008-12-19 | 2013-10-23 | 北京太克易航科贸有限公司 | 用于单晶硅生长过程控制的智能pid控制方法及其*** |
JP5446277B2 (ja) * | 2009-01-13 | 2014-03-19 | 株式会社Sumco | シリコン単結晶の製造方法 |
JP5758986B2 (ja) | 2011-03-23 | 2015-08-05 | トヨタ自動車株式会社 | SiC単結晶の製造方法および製造装置 |
WO2013065204A1 (ja) | 2011-10-31 | 2013-05-10 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
DE102013210687B4 (de) | 2013-06-07 | 2018-12-06 | Siltronic Ag | Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser |
CN105895716A (zh) * | 2016-06-22 | 2016-08-24 | 安徽国成顺风风力发电有限公司 | 一种高能量转化率太阳能电池材料及其制备方法 |
DE102016219605A1 (de) * | 2016-10-10 | 2018-04-12 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial aus einer Schmelze, die in einem Tiegel enthalten ist |
CN107417074B (zh) * | 2017-08-28 | 2020-04-14 | 长飞光纤光缆股份有限公司 | 一种石英锭的制备方法、装置及*** |
EP4008813A1 (de) * | 2020-12-04 | 2022-06-08 | Siltronic AG | Verfahren zum ziehen eines einkristalls nach der czochralski-methode |
CN115404542B (zh) * | 2021-05-28 | 2024-03-01 | 隆基绿能科技股份有限公司 | 单晶直拉生长方法、装置、设备及计算机可读存储介质 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63242991A (ja) | 1987-03-31 | 1988-10-07 | Shin Etsu Handotai Co Ltd | 結晶径制御方法 |
JPH0777996B2 (ja) | 1990-10-12 | 1995-08-23 | 信越半導体株式会社 | コーン部育成制御方法及び装置 |
JPH0717475B2 (ja) * | 1991-02-14 | 1995-03-01 | 信越半導体株式会社 | 単結晶ネック部育成自動制御方法 |
US5178720A (en) | 1991-08-14 | 1993-01-12 | Memc Electronic Materials, Inc. | Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates |
JP2966322B2 (ja) * | 1995-02-27 | 1999-10-25 | 三菱マテリアルシリコン株式会社 | シリコン単結晶インゴット及びその製造方法 |
US5487355A (en) * | 1995-03-03 | 1996-01-30 | Motorola, Inc. | Semiconductor crystal growth method |
US5653799A (en) | 1995-06-02 | 1997-08-05 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
EP0821082B1 (de) * | 1996-06-27 | 1999-01-20 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Verfahren und Vorrichtung zur Steuerung des Kristallwachstums |
US5846318A (en) | 1997-07-17 | 1998-12-08 | Memc Electric Materials, Inc. | Method and system for controlling growth of a silicon crystal |
US5882402A (en) | 1997-09-30 | 1999-03-16 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
US5961716A (en) * | 1997-12-15 | 1999-10-05 | Seh America, Inc. | Diameter and melt measurement method used in automatically controlled crystal growth |
US5968263A (en) * | 1998-04-01 | 1999-10-19 | Memc Electronic Materials, Inc. | Open-loop method and system for controlling growth of semiconductor crystal |
-
1999
- 1999-10-19 US US09/421,187 patent/US6203611B1/en not_active Expired - Lifetime
-
2000
- 2000-09-21 DE DE60006713T patent/DE60006713T2/de not_active Expired - Fee Related
- 2000-09-21 WO PCT/US2000/025897 patent/WO2001029292A1/en not_active Application Discontinuation
- 2000-09-21 JP JP2001532270A patent/JP2003512282A/ja not_active Withdrawn
- 2000-09-21 EP EP00963686A patent/EP1230447B1/de not_active Expired - Lifetime
- 2000-09-21 KR KR1020027005033A patent/KR20020059631A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE60006713T2 (de) | 2004-08-12 |
KR20020059631A (ko) | 2002-07-13 |
WO2001029292A1 (en) | 2001-04-26 |
US6203611B1 (en) | 2001-03-20 |
JP2003512282A (ja) | 2003-04-02 |
EP1230447A1 (de) | 2002-08-14 |
EP1230447B1 (de) | 2003-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |