DE4294151T1 - Magnetoresistives Element und Herstellungsverfahren dafür - Google Patents

Magnetoresistives Element und Herstellungsverfahren dafür

Info

Publication number: DE4294151T1
Authority: DE; Germany
Prior art keywords: manufacturing; magnetoresistive element; method therefor; therefor; magnetoresistive
Prior art date: 1991-12-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

DE4294151T

Other languages

English (en)

Other versions

DE4294151C2 (de

Inventor

Yasutoshi Suzuki

Kenichi Ao

Hirofumi Uenoyama

Hiroki Noguchi

Koji Eguchi

Ichiro Ito

Yoshimi Yoshino

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Denso Corp

Original Assignee

NipponDenso Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-12-03

Filing date

1992-12-03

Publication date

1994-01-13

1992-10-27 Priority claimed from JP4289099A external-priority patent/JP2903910B2/ja

1992-11-25 Priority claimed from JP4314847A external-priority patent/JP2943541B2/ja

1992-12-03 Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd

1994-01-13 Publication of DE4294151T1 publication Critical patent/DE4294151T1/de

Status Pending legal-status Critical Current

Links

238000004519 manufacturing process Methods 0.000 title 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices

DE4294151T 1991-12-03 1992-12-03 Magnetoresistives Element und Herstellungsverfahren dafür Pending DE4294151T1 (de)

Applications Claiming Priority (6)

Application Number	Priority Date	Filing Date	Title
JP31944491		1991-12-03
JP1683492		1992-01-31
JP7148992		1992-03-27
JP28468392		1992-10-22
JP4289099A JP2903910B2 (ja)	1991-12-03	1992-10-27	抵抗素子の抵抗調整方法
JP4314847A JP2943541B2 (ja)	1992-01-31	1992-11-25	磁気抵抗素子およびその製造方法

Publications (1)

Publication Number	Publication Date
DE4294151T1 true DE4294151T1 (de)	1994-01-13

Family

ID=27548688

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
DE4294151A Expired - Lifetime DE4294151C2 (de)	1991-12-03	1992-12-03	Magnetoresistives Element und Herstellungsverfahren dafür
DE4294151T Pending DE4294151T1 (de)	1991-12-03	1992-12-03	Magnetoresistives Element und Herstellungsverfahren dafür

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
DE4294151A Expired - Lifetime DE4294151C2 (de)	1991-12-03	1992-12-03	Magnetoresistives Element und Herstellungsverfahren dafür

Country Status (3)

Country	Link
US (1)	US5471084A (de)
DE (2)	DE4294151C2 (de)
WO (1)	WO1993011569A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE19614460A1 (de) *	1996-04-12	1997-10-16	Bosch Gmbh Robert	Verfahren zur Herstellung eines GMR-Brückensensors sowie GMR-Brückensensor

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5856235A (en) *	1995-04-12	1999-01-05	Northrop Grumman Corporation	Process of vacuum annealing a thin film metallization on high purity alumina
WO1997001854A1 (en) *	1995-06-28	1997-01-16	Bell Communication Research, Inc.	Barrier layer for ferroelectric capacitor integrated on silicon
KR100220935B1 (ko) *	1995-12-15	1999-09-15	김영환	메탈 콘택 형성방법
US6242792B1 (en)	1996-07-02	2001-06-05	Denso Corporation	Semiconductor device having oblique portion as reflection
JP3374680B2 (ja)	1996-11-06	2003-02-10	株式会社デンソー	半導体装置の製造方法
US5990533A (en) *	1997-03-31	1999-11-23	Nec Corporation	Semiconductor device including a magnetoresistance effect element functioning as a current detector
US5998296A (en) *	1997-04-16	1999-12-07	Texas Instruments Incorporated	Method of forming contacts and vias in semiconductor
JP4646342B2 (ja) *	1998-11-20	2011-03-09	株式会社日立グローバルストレージテクノロジーズ	薄膜磁気ヘッド寸法・配列測定方法および薄膜磁気ヘッド寸法・配列測定装置
JP3603771B2 (ja)	2000-09-26	2004-12-22	松下電器産業株式会社	磁気抵抗素子およびそれを用いた磁気センサ、メモリー装置
JP3971934B2 (ja) *	2001-03-07	2007-09-05	ヤマハ株式会社	磁気センサとその製法
US6906899B2 (en)	2002-09-26	2005-06-14	Hitachi Global Storage Technologies Netherlands B.V.	GMR sensor with end portion magnetization of pinned layer modified to reduce side reading effects
KR100590211B1 (ko) *	2002-11-21	2006-06-15	가부시키가이샤 덴소	자기 임피던스 소자, 그를 이용한 센서 장치 및 그 제조방법
US7372117B2 (en) *	2004-09-16	2008-05-13	Industrial Technology Research Institute	Magneto-resistance transistor and method thereof
US20080037167A1 (en) *	2006-08-09	2008-02-14	Flint Eric W	Forming a head with reduced pole tip recession
JP5726260B2 (ja) *	2013-10-17	2015-05-27	三菱電機株式会社	磁気センサおよびその製造方法
JP2017103385A (ja) *	2015-12-03	2017-06-08	株式会社東海理化電機製作所	半導体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4091406A (en) *	1976-11-01	1978-05-23	Rca Corporation	Combination glass/low temperature deposited Siw Nx Hy O.sub.z
JPS57126187A (en) *	1981-01-28	1982-08-05	Hitachi Ltd	Reluctance element
JPS57149782A (en) *	1981-03-11	1982-09-16	Hitachi Ltd	Electrode formation for magnetic resistance element
JPS5851523A (ja) *	1981-09-22	1983-03-26	Fujitsu Ltd	半導体装置
JPS59110122A (ja) *	1982-12-15	1984-06-26	Nec Corp	窒化膜を有する半導体集積回路装置
JPS60101968A (ja) *	1983-11-07	1985-06-06	Seiko Epson Corp	半導体装置
US4945397A (en) *	1986-12-08	1990-07-31	Honeywell Inc.	Resistive overlayer for magnetic films
JPS63293916A (ja) *	1987-05-27	1988-11-30	Hitachi Ltd	半導体装置の製造法
JP2586434B2 (ja) *	1987-08-21	1997-02-26	株式会社デンソー	磁気検出装置
JP2615085B2 (ja) *	1987-10-27	1997-05-28	富士重工業株式会社	４輪駆動車のトラクション制御装置
JP2720442B2 (ja) *	1988-02-04	1998-03-04	ソニー株式会社	磁気抵抗素子の製造方法
JPH01200682A (ja) *	1988-02-05	1989-08-11	Copal Co Ltd	強磁性磁気抵抗効果素子の製造方法
JPH0719924B2 (ja) *	1988-04-30	1995-03-06	日本電装株式会社	磁気検出装置
JP2595743B2 (ja) *	1989-05-15	1997-04-02	日本電装株式会社	半導体装置およびそれを用いた磁気検出装置
US5262666A (en) *	1989-05-15	1993-11-16	Nippondenso Co., Ltd.	Semiconductor device with a nickel alloy protective resistor
US5065695A (en) *	1989-06-16	1991-11-19	Nordson Corporation	Apparatus for compensating for non-linear flow characteristics in dispensing a coating material
US5198884A (en) *	1990-03-27	1993-03-30	Matsushita Electric Industrial Co., Ltd.	Semiconductor devices having a double-layer interconnection structure

1992
- 1992-12-03 US US08/094,142 patent/US5471084A/en not_active Expired - Lifetime
- 1992-12-03 DE DE4294151A patent/DE4294151C2/de not_active Expired - Lifetime
- 1992-12-03 WO PCT/JP1992/001581 patent/WO1993011569A1/ja active Application Filing
- 1992-12-03 DE DE4294151T patent/DE4294151T1/de active Pending

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE19614460A1 (de) *	1996-04-12	1997-10-16	Bosch Gmbh Robert	Verfahren zur Herstellung eines GMR-Brückensensors sowie GMR-Brückensensor

Also Published As

Publication number	Publication date
US5471084A (en)	1995-11-28
DE4294151C2 (de)	1998-02-05
WO1993011569A1 (en)	1993-06-10

Publication	Publication Date	Title
DE69229322D1 (de)	1999-07-08	Magnetowiderstandseffekt-Element und Magnetowiderstandseffekt-Fühler
DE69329669D1 (de)	2000-12-21	Magnetoresistiver Sensor und Herstellungsverfahren dafür
DE69617833D1 (de)	2002-01-24	Magnetoresistives Element und Speicherelement
DE69403461D1 (de)	1997-07-03	Katheter und herstellungsverfahren
DE69316708D1 (de)	1998-03-05	Magneto-resistiver Fühler
DE69326308D1 (de)	1999-10-14	Magneto-resistiver Fühler
DE69435045D1 (de)	2008-01-03	Halbleiter-Anordnung und Herstellungsverfahren dafür
DE69229140D1 (de)	1999-06-17	Aufzeichnungsschicht und Aufzeichnungsverfahren
DE19580095T1 (de)	1996-02-22	Sensor mit magnetoresistiven Elementen
DE69232236D1 (de)	2002-01-10	Halbleiter-sensor und seine herstellungsmethode
DE69317178D1 (de)	1998-04-09	Magnetoresistiver Sensor
DE69418142D1 (de)	1999-06-02	Lesemagnetkopf mit Mehrschichtmagnetowiderstandselement und Konzentrator und Herstellungsverfahren
DE69209468D1 (de)	1996-05-02	Magnetowiderstandseffekt-Element
DE4294151T1 (de)	1994-01-13	Magnetoresistives Element und Herstellungsverfahren dafür
DE69219936D1 (de)	1997-07-03	Magnetowiderstandseffekt-Element
DE69305933D1 (de)	1996-12-19	Magnetoresistives Element
DE69207856D1 (de)	1996-03-07	Magnetowiderstandseffekt-Element
DE69316438D1 (de)	1998-02-26	Magnetoresistives Element
DE69332038D1 (de)	2002-07-25	Magnetowiderstandeffekt-Element
DE69428007D1 (de)	2001-09-27	Magnetoresistive Elemente und Herstellungsverfahren dafür
DE69321432D1 (de)	1998-11-12	Integrierte magnetische Speicherelementschaltung und ihr Herstellungsverfahren
DE69228609D1 (de)	1999-04-15	Analog/digitalwanlder und herstellungsverfahren
FI921936A (fi)	1993-10-30	Menetelmä elementtirakenteen valmistamiseksi ja elementtirakenne
DE69521965D1 (de)	2001-09-06	Magnetkopf und herstellungsverfahren
DE69421882D1 (de)	2000-01-05	Magnetkopf und Herstellungsverfahren

DE4294151T1 - Magnetoresistives Element und Herstellungsverfahren dafür - Google Patents

Info

Links

Classifications

Applications Claiming Priority (6)

Publications (1)

Family

ID=27548688

Family Applications (2)

Family Applications Before (1)

Country Status (3)

Cited By (1)

Families Citing this family (16)

Family Cites Families (17)

Cited By (1)

Also Published As

Similar Documents