DE4017697A1 - Mfg. electronic component with chip on thermal conductor - positioned in through-hole in base for use as surface mounted power device on metal core circuit board - Google Patents

Mfg. electronic component with chip on thermal conductor - positioned in through-hole in base for use as surface mounted power device on metal core circuit board

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Publication number
DE4017697A1
DE4017697A1 DE4017697A DE4017697A DE4017697A1 DE 4017697 A1 DE4017697 A1 DE 4017697A1 DE 4017697 A DE4017697 A DE 4017697A DE 4017697 A DE4017697 A DE 4017697A DE 4017697 A1 DE4017697 A1 DE 4017697A1
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Germany
Prior art keywords
heat
chip
conducting body
carrier
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE4017697A
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German (de)
Other versions
DE4017697C2 (en
Inventor
Ludger Dipl Phys Olbrich
Anton Dipl Ing Doering
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
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Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE4017697A priority Critical patent/DE4017697C2/en
Priority to JP3128941A priority patent/JP2971181B2/en
Publication of DE4017697A1 publication Critical patent/DE4017697A1/en
Priority to US07/930,474 priority patent/US5202288A/en
Priority to US08/011,215 priority patent/US5345106A/en
Application granted granted Critical
Publication of DE4017697C2 publication Critical patent/DE4017697C2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4875—Connection or disconnection of other leads to or from bases or plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
    • H01L2224/32188—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic the layer connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Chip(s) are placed on a base (1) connecting to the terminals leading to the outside and contact a thermal conductor (11). The latter and the base are perforated in the area (13) for mounting the chip (30). A heat conductive piece (21) is placed in the hole (20) and connected to the base and chip is placed on and the a frame (11) and the heat conductor. The frame is pref. of copper alloy or aluminium. The base is perforated by stamping, etching or erosion. The frame and base are connected by pinching, cold welding, bonding with adhesive or soldering. The frame is placed with Ni and/or Ag or Au on the surface (25) fitting in the hole. The chip is attached to the frame by bonding with adhesive, soldering or eutectic bonding and contacted with the terminals (12) with bond wire (32). USE/ADVANTAGE - Power device mountable on surface of metal core circuit boards. Can be pushed through circuit board and soldered firmly to the back. Standard lead frames may be used as the base. Ensures esp. good heat dissipation.

Description

Stand der TechnikState of the art

Die Erfindung geht aus von einem elektronischen Bauelement und einem Verfahren zum Aufbau von elektronischen Bauelementen nach der Gattung der selbständigen Hauptansprüche.The invention is based on an electronic component and a Process for the construction of electronic components according to the Genre of independent main claims.

Es ist bereits bekannt, elektronische Leistungsbauelemente zur Ableitung von Wärme mit Wärmesenken in Form von wärmeleitenden Körpern zu versehen. Diese werden meist lose beim Umhüllen des Chips in die Gehäusepreßform eingelegt, wobei sie nur über die Montage­ fläche des als Träger dienenden Leadframes mit dem Chip in Wärme­ kontakt stehen. Für oberflächenmontierbare Bauelemente ist ferner bekannt, eine Seite des Gehäuses, die nicht der Leiterplatte zuge­ wandt ist, als Wärmesenke auszubilden und an auf die Leiterplatte aufgebrachte Kühlwinkel anzuschließen. Dieser Aufbau ist nur mit entsprechendem Platzaufwand realisierbar.It is already known to use electronic power components Dissipation of heat with heat sinks in the form of heat-conducting Bodies. These are usually loose when the chip is wrapped inserted into the housing mold, whereby it is only about assembly area of the lead frame serving as carrier with the chip in heat contact. For surface mount components is also known, one side of the housing, not the circuit board is to train as a heat sink and on the circuit board attached cooling angle to connect. This setup is only with corresponding space requirements can be realized.

Vorteile der ErfindungAdvantages of the invention

Das erfindungsgemäße Verfahren mit den kennzeichnenden Merkmalen des Anspruchs 1 hat den Vorteil, daß es zur Herstellung beliebiger Bauelementformen eingesetzt werden kann, egal ob die Bauelemente oberflächenmontierbar sein sollen oder durch die Leiterplatte durch­ gesteckt und auf der Rückseite der Leiterplatte festgelötet werden sollen. Vorteilhaft ist außerdem, daß Standard-Leadframes als Träger verwendet werden können. Durch das Einbringen eines wärmeleitenden Körpers in die Montagefläche des Leadframes und durch die direkte Montage des Chips auf dem wärmeleitenden Körper wird eine besonders gute Wärmeableitung erreicht.The inventive method with the characterizing features of Claim 1 has the advantage that it can be used to manufacture any  Component shapes can be used, regardless of whether the components should be surface mountable or through the circuit board inserted and soldered to the back of the circuit board should. It is also advantageous that standard lead frames as carriers can be used. By introducing a thermally conductive Body into the mounting surface of the leadframe and through the direct Mounting the chip on the heat-conducting body becomes a special one good heat dissipation achieved.

Durch die in den Unteransprüchen aufgeführten Maßnahmen sind vor­ teilhafte Weiterbildungen des im Hauptanspruch angegebenen Ver­ fahrens möglich. Für eine Massenfertigung besonders vorteilhaft ist, daß sich der Durchbruch in der Montagefläche des Leadframes durch Standardverfahren wie Ausstanzen, Freiätzen oder Freierodieren erzeugen läßt. Bei exakter Dimensionierung des wärmeleitenden Körpers entsprechend dem Durchbruch in der Montagefläche des Lead­ frames lassen sich vorteilhaft Standardmethoden wie Verquetschen, Kaltschweißen, Kleben oder Verlöten zum Verbinden des wärmeleitenden Körpers mit dem Leadframe als Träger einsetzen. Je nach Oberflächen­ material des wärmeleitenden Körpers kann der Chip einfach durch Kleben im Fall einer Silberoberfläche, durch Löten im Fall einer Nickeloberfläche oder durch eutektisches Bonden im Fall einer Gold­ oberfläche auf dem wärmeleitenden Körper montiert werden. Eine Ummantelung des Chips erfolgt vorteilhaft mit Standardverfahren; sie wird besonders günstig aus Plastik gepreßt. Vorteilhaft in diesem Zusammenhang ist es, wenn der wärmeleitende Körper aus der Um­ mantelung des Chips herausragt, so daß eine direkte Wärmeankopplung an ein geeignetes Medium möglich ist.The measures listed in the subclaims provide for partial developments of the specified in the main claim Ver driving possible. It is particularly advantageous for mass production that the breakthrough in the mounting surface of the lead frame Standard procedures such as punching, free etching or free eroding can generate. With exact dimensioning of the heat-conducting Body according to the breakthrough in the mounting surface of the lead frames can be advantageous standard methods such as squeezing, Cold welding, gluing or soldering to connect the heat conductive Insert the body with the lead frame as the carrier. Depending on the surfaces The chip can easily be made of the material of the heat-conducting body Gluing in the case of a silver surface, by soldering in the case of one Nickel surface or by eutectic bonding in the case of a gold surface to be mounted on the heat-conducting body. A The chip is advantageously wrapped using standard methods; they is pressed particularly cheaply from plastic. Beneficial in this It is connected when the heat-conducting body comes from the surrounding area jacket of the chip protrudes, so that a direct heat coupling a suitable medium is possible.

Für das elektronische Bauelement mit den kennzeichnenden Merkmalen des Anspruchs 10 ist es besonders vorteilhaft, den wärmeleitenden Körper aus einem Materialblock, beispielsweise aus einer Kupfer­ legierung oder Aluminium zu fertigen, da so der Wärmewiderstand vom Chip zu einem Kühlmedium besonders gering gehalten wird. Weitere Maßnahmen zur Reduzierung des Wärmewiderstandes stellen das Ein­ bringen des wärmeleitenden Körpers in die Montagefläche des Lead­ frames und die direkte Montage des Chips auf dem wärmeleitenden Körper dar. Besonders vorteilhaft ist es schließlich, daß die Wärme direkt über den als Wärmesenke dienenden wärmeleitenden Körper, der aus der Ummantelung des Chips herausragt, an ein geeignetes Medium abführbar ist. Diese Vorteile kommen besonders bei oberflächen­ montierbaren Leistungsbauelementen auf Metallkernleiterplatten zum Tragen, wobei die wärmeleitenden Körper durch geeignete Verbindungs­ prozesse in direktem Kontakt zum Metallkern der Leiterplatte stehen, der die Funktion eines Kühlkörpers erfüllt.For the electronic component with the characteristic features of claim 10, it is particularly advantageous to the thermally conductive Bodies from a block of material, for example from a copper  alloy or aluminum, because the thermal resistance of Chip to a cooling medium is kept particularly low. Further Measures to reduce thermal resistance are on bring the heat conductive body into the mounting surface of the lead frames and the direct mounting of the chip on the thermally conductive Finally, it is particularly advantageous that the heat directly over the heat-conducting body serving as a heat sink, the protrudes from the casing of the chip to a suitable medium is dissipatable. These advantages come especially with surfaces mountable power components on metal core circuit boards for Wear, the heat conductive body by suitable connection processes are in direct contact with the metal core of the circuit board, that performs the function of a heat sink.

Zeichnungdrawing

Ein Ausführungsbeispiel der Erfindung ist in der Zeichnung dar­ gestellt und in der nachfolgenden Beschreibung näher erläutert. Es zeigen die Fig. 1a bis d den Aufbau eines Bauelements in ver­ schiedenen Stadien.An embodiment of the invention is shown in the drawing and explained in more detail in the following description. In the drawings Figs. 1a to d the structure of a device in various stages ver.

Beschreibung des AusführungsbeispielsDescription of the embodiment

In Fig. 1a ist mit 10 ein Träger bezeichnet, der durch eine Einheit eines Leadframes, bestehend aus einem Rahmen 11 mit Anschlüssen 12, einer Montagefläche 13 und Verbindungsstegen 14, die eine Verbindung zwischen der Montagefläche 13 und dem Rahmen 11 herstellen, gebildet wird. In einem ersten Verfahrensschritt, der auch schon bei der Herstellung des Leadframes erfolgen kann, wird ein Durchbruch 20 in die Montagefläche 13 eingebracht. Dies kann entweder durch Aus­ stanzen, Freiätzen, Freierodieren oder eine andere geeignete Technik erfolgen. In Fig. 1a, 10 denotes a carrier, which is formed by a unit of a lead frame, consisting of a frame 11 with connections 12 , a mounting surface 13 and connecting webs 14 , which produce a connection between the mounting surface 13 and the frame 11 . In a first process step, which can also take place during the production of the lead frame, an opening 20 is made in the mounting surface 13 . This can be done either by punching out, free etching, free eroding or another suitable technique.

In Fig. 1b ist der so präparierte Leadframe dargestellt und ein wärmeleitender Körper 21, dessen Oberfläche 25 so dimensioniert ist, daß er genau in den Durchbruch 20 hineinpaßt. Der als Wärmesenke dienende wärmeleitende Körper 21 ist aus einem Materialblock gefertigt, seine Dicke beträgt ein Mehrfaches der Leadframestärke. Besonders geeignet für Wärmesenken 21 sind Materialien mit hoher Wärmeleitfähigkeit wie z. B. Kupferlegierungen oder Aluminium. Da ein Chip 30 auf der Oberfläche 25 des wärmeleitenden Körpers 21 montiert werden soll, kann dort zur besseren Haftung des Chips eine Silber- , Nickel- oder Goldschicht abgeschieden werden oder auch ein anderes Material, das entsprechend dem Montageverfahren gewählt wird.In Fig. 1b of the thus prepared lead frame is shown, and a heat-conducting body 21 whose surface 25 is dimensioned such that it fits precisely into the opening 20. The heat-conducting body 21 serving as a heat sink is made from a block of material, and its thickness is a multiple of the lead frame thickness. Particularly suitable for heat sinks 21 are materials with high thermal conductivity such as. B. copper alloys or aluminum. Since a chip 30 is to be mounted on the surface 25 of the heat-conducting body 21 , a layer of silver, nickel or gold can be deposited there for better adhesion of the chip, or another material that is selected in accordance with the assembly method.

In Fig. 1c ist der Leadframe 10 dargestellt, nach dem Einbringen des wärmeleitenden Körpers 21 in den Durchbruch 20. Die Verbindung des wärmeleitenden Körpers 21 mit dem Leadframe 10 kann durch Verquetschen, Kaltschweißen, Kleben oder auch Verlöten an geeigneten Stellen 22 erfolgen. Je nach Beschaffenheit der Oberfläche 25 des wärmeleitenden Körpers 21 wird der Chip 30 direkt auf den wärme­ leitenden Körper 21 geklebt, im Falle einer Silberoberfläche 25, gelötet, im Falle einer Nickeloberfläche 25, oder eutektisch gebondet im Falle einer Goldoberfläche 25. Der Erfindungsgegenstand beschränkt sich jedoch nicht auf diese Verfahren, sondern umfaßt alle geeigneten Montageverfahren für Chips. Die Verbindung des Chips 30 mit den Anschlüssen 12 kann beispielsweise über Bonddrähte 32 hergestellt werden.In Fig. 1c of the lead frame 10 is shown, after introducing the thermally conductive body 21 in the opening 20. The heat-conducting body 21 can be connected to the leadframe 10 by squeezing, cold welding, gluing or also soldering at suitable points 22 . Depending on the nature of the surface 25 of the thermally conductive body 21, the chip is glued 30 directly to the thermally conductive body 21, in the case of a silver surface 25, soldered, in the case of a nickel surface of 25, or eutectic bonded in the case of a gold surface 25th However, the subject matter of the invention is not limited to these methods, but includes all suitable assembly methods for chips. The connection of the chip 30 to the connections 12 can be established, for example, via bond wires 32 .

In Fig. 1d ist dieser Aufbau dargestellt, nachdem der Chip 30 mit den Bonddrähten 32 in eine Ummantelung 35 so eingebracht wurde, daß eine Seite 26 des wärmeleitenden Körpers 21 aus der Ummantelung 35 herausragt. Diese Oberfläche 26 kann nun direkt mit einem geeigneten Kühlkörper in Kontakt gebracht werden, über den die Wärme abgeleitet wird. Dadurch wird der Wärmewiderstand zwischen Chip 30 und Kühl­ körper besonders gering gehalten. Für bestimmte Anwendungen ist auch Luft als kühlendes Medium geeignet und kein zusätzlicher Kühlkörper erforderlich.This structure is shown in FIG. 1d after the chip 30 with the bonding wires 32 has been introduced into a casing 35 such that one side 26 of the heat-conducting body 21 protrudes from the casing 35 . This surface 26 can now be brought into direct contact with a suitable heat sink via which the heat is dissipated. As a result, the thermal resistance between the chip 30 and the cooling body is kept particularly low. For certain applications, air is also suitable as a cooling medium and no additional heat sink is required.

In dem in Fig. 1d dargestellten Beispiel sind die Anschlüsse 12 charakteristisch für ein oberflächenmontierbares Bauelement gebogen. Der erfindungsgemäße Aufbau eignet sich besonders für solche ober­ flächenmontierbaren Bauelemente im Zusammenhang mit Metallkern­ leiterplatten, wobei die Wärmesenke 21 durch einen geeigneten Prozeß mit dem Metallkern der Leiterplatte in Verbindung gebracht wird, der als Kühlkörper dient. Dies stellt eine besonders platzsparende Lösung der Wärmeableitung von Leistungsbauelementen auf Leiter­ platten dar. Das in den Fig. 1a bis 1d dargestellte Verfahren ist jedoch ebenso geeignet für Bauelemente, die durch die Leiterplatte durchgesteckt und von der Rückseite der Leiterplatte ausgehend fest­ gelötet werden.In the example shown in FIG. 1d, the connections 12 are characteristic of a surface-mountable component. The structure according to the invention is particularly suitable for such surface-mountable components in connection with metal core circuit boards, the heat sink 21 being connected by a suitable process to the metal core of the circuit board, which serves as a heat sink. This represents a particularly space-saving solution for the heat dissipation of power components on printed circuit boards. However, the method shown in FIGS. 1a to 1d is also suitable for components which are pushed through the printed circuit board and are firmly soldered starting from the back of the printed circuit board.

Claims (14)

1. Verfahren zur Herstellung von elektronischen Bauelementen, wobei mindestens ein Chip auf einen Träger aufgebracht und mit den nach außen führenden Anschlüssen verbunden wird und bei dem der mindestens eine Chip in Kontakt mit einem wärmeleitenden Körper gebracht wird, dadurch gekennzeichnet, daß der Träger (10) im Bereich der Montagefläche (13) des Chips (30) durchbrochen wird, daß in den Durchbruch (20) der wärmeleitende Körper (21) eingebracht und mit dem Träger (10) verbunden wird und daß der Chip (30) auf den wärmeleitenden Körper (21) aufgebracht wird.1. A method for producing electronic components, wherein at least one chip is applied to a carrier and connected to the connections leading to the outside and in which the at least one chip is brought into contact with a heat-conducting body, characterized in that the carrier ( 10 ) in the area of the mounting surface ( 13 ) of the chip ( 30 ) that the heat-conducting body ( 21 ) is introduced into the opening ( 20 ) and connected to the carrier ( 10 ) and that the chip ( 30 ) on the heat-conducting body ( 21 ) is applied. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Durchbruch (20) in die Montagefläche (13) durch Ausstanzen, Freiätzen oder Freierodieren eingebracht wird.2. The method according to claim 1, characterized in that the opening ( 20 ) is introduced into the mounting surface ( 13 ) by punching, free etching or free eroding. 3. Verfahren nach einem der Ansprüche 1 oder 2, dadurch gekennzeich­ net, daß der Durchbruch (20) und der wärmeleitende Körper (21) so dimensioniert werden, daß der wärmeleitende Körper (21) genau in den Durchbruch (20) einpaßbar ist und daß der wärmeleitende Körper (21) dicker als der Träger (10) ist. 3. The method according to any one of claims 1 or 2, characterized in that the opening ( 20 ) and the heat-conducting body ( 21 ) are dimensioned so that the heat-conducting body ( 21 ) can be fitted exactly into the opening ( 20 ) and that the heat-conducting body ( 21 ) is thicker than the carrier ( 10 ). 4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Verbindung des wärmeleitenden Körpers (21) mit dem Träger (10) durch Verquetschen, Kaltschweißen, Kleben oder Verlöten erfolgt.4. The method according to any one of the preceding claims, characterized in that the connection of the heat-conducting body ( 21 ) with the carrier ( 10 ) is carried out by squeezing, cold welding, gluing or soldering. 5. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß auf der in den Durchbruch (20) eingepaßten Oberfläche (25) des wärmeleitenden Körpers (21) mindestens eine Schicht Nickel und/oder Silber oder Gold abgeschieden wird.5. The method according to any one of the preceding claims, characterized in that at least one layer of nickel and / or silver or gold is deposited on the surface ( 25 ) of the heat-conducting body ( 21 ) fitted into the opening ( 20 ). 6. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Chip (30) auf die in den Durchbruch (20) eingepaßte Oberfläche (25) des wärmeleitenden Körpers (21) geklebt, gelötet oder eutektisch gebondet wird.6. The method according to any one of the preceding claims, characterized in that the chip ( 30 ) is glued, soldered or eutectically bonded onto the surface ( 25 ) of the heat-conducting body ( 21 ) fitted into the opening ( 20 ). 7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Chip (30) über Bonddrähte (32) mit den Anschlüssen (12) kontaktiert wird.7. The method according to any one of the preceding claims, characterized in that the chip ( 30 ) via bond wires ( 32 ) with the connections ( 12 ) is contacted. 8. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Chip (30) mit einem elektrisch nicht leitenden Material ummantelt wird.8. The method according to any one of the preceding claims, characterized in that the chip ( 30 ) is coated with an electrically non-conductive material. 9. Verfahren nach Anspruch 8, dadurch gekennzeichnet, daß die Ummantelung (35) des Chips (30) aus Plastik gepreßt wird.9. The method according to claim 8, characterized in that the casing ( 35 ) of the chip ( 30 ) is pressed from plastic. 10. Elektronisches Bauelement mit mindestens einem auf einen Träger aufgebrachten Chip, der mit nach außen führenden Anschlüssen ver­ bunden ist und mit einem elektrisch nicht leitenden Material um­ mantelt ist und in dessen Ummantelung ein wärmeleitender Körper eingebracht ist, dadurch gekennzeichnet, daß der wärmeleitende Körper (21) in einen Durchbruch (20) des Trägers (10) eingebracht und mit dem Träger (10) verbunden ist und daß der Chip (30) direkt auf den wärmeleitenden Körper (21) aufgebracht ist.10. Electronic component with at least one chip applied to a carrier, which is connected to ver leading connections and is coated with an electrically non-conductive material and in the casing of which a heat-conducting body is introduced, characterized in that the heat-conducting body ( 21 ) is introduced into an opening ( 20 ) in the carrier ( 10 ) and is connected to the carrier ( 10 ) and that the chip ( 30 ) is applied directly to the heat-conducting body ( 21 ). 11. Elektronisches Bauelement nach Anspruch 10, dadurch gekenn­ zeichnet, daß der wärmeleitende Körper (21) aus einer Kupferlegierung oder Aluminium gefertigt ist.11. Electronic component according to claim 10, characterized in that the heat-conducting body ( 21 ) is made of a copper alloy or aluminum. 12. Elektronisches Bauelement nach Anspruch 10 oder 11, dadurch gekennzeichnet, daß der wärmeleitende Körper (21) aus der Um­ mantelung (35) herausragt und wärmeankoppelbar ist.12. Electronic component according to claim 10 or 11, characterized in that the heat-conducting body ( 21 ) from the order jacket ( 35 ) protrudes and is heat-coupled. 13. Elektronisches Bauelement nach Anspruch 12, dadurch gekenn­ zeichnet, daß die Unterseite (26) des herausragenden, wärme­ leitenden Körpers (21) mit den nach außen führenden Anschlüssen (12) in etwa fluchtet.13. Electronic component according to claim 12, characterized in that the underside ( 26 ) of the outstanding, heat-conducting body ( 21 ) with the outwardly leading connections ( 12 ) is approximately aligned. 14. Elektronisches Bauelement nach einem der Ansprüche 10 bis 13, dadurch gekennzeichnet, daß es als oberflächenmontierbares Leistungsbauelement auf Metallkernleiterplatten verwendet wird.14. Electronic component according to one of claims 10 to 13, characterized in that it is surface mountable Power component is used on metal core circuit boards.
DE4017697A 1990-06-01 1990-06-01 Electronic component, process for its production and use Expired - Lifetime DE4017697C2 (en)

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DE4017697A DE4017697C2 (en) 1990-06-01 1990-06-01 Electronic component, process for its production and use
JP3128941A JP2971181B2 (en) 1990-06-01 1991-05-31 Electronic component and method for manufacturing the electronic component
US07/930,474 US5202288A (en) 1990-06-01 1992-08-13 Method of manufacturing an electronic circuit component incorporating a heat sink
US08/011,215 US5345106A (en) 1990-06-01 1993-01-29 Electronic circuit component with heat sink mounted on a lead frame

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JP2971181B2 (en) 1999-11-02
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