DE3884778T2 - Feine Polierzusammensetzung für Plaketten. - Google Patents

Feine Polierzusammensetzung für Plaketten.

Info

Publication number
DE3884778T2
DE3884778T2 DE88121332T DE3884778T DE3884778T2 DE 3884778 T2 DE3884778 T2 DE 3884778T2 DE 88121332 T DE88121332 T DE 88121332T DE 3884778 T DE3884778 T DE 3884778T DE 3884778 T2 DE3884778 T2 DE 3884778T2
Authority
DE
Germany
Prior art keywords
badges
polishing composition
fine polishing
fine
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88121332T
Other languages
English (en)
Other versions
DE3884778D1 (de
Inventor
Shigeo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62333027A external-priority patent/JPH01177969A/ja
Priority claimed from JP63156691A external-priority patent/JP2625002B2/ja
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Application granted granted Critical
Publication of DE3884778D1 publication Critical patent/DE3884778D1/de
Publication of DE3884778T2 publication Critical patent/DE3884778T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE88121332T 1987-12-29 1988-12-20 Feine Polierzusammensetzung für Plaketten. Expired - Fee Related DE3884778T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62333027A JPH01177969A (ja) 1987-12-29 1987-12-29 ウェハーのファイン研磨用組成物
JP63156691A JP2625002B2 (ja) 1988-06-27 1988-06-27 ウェハーのファイン研磨用組成物

Publications (2)

Publication Number Publication Date
DE3884778D1 DE3884778D1 (de) 1993-11-11
DE3884778T2 true DE3884778T2 (de) 1994-05-11

Family

ID=26484375

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88121332T Expired - Fee Related DE3884778T2 (de) 1987-12-29 1988-12-20 Feine Polierzusammensetzung für Plaketten.

Country Status (4)

Country Link
US (1) US4983650A (de)
EP (1) EP0322721B1 (de)
KR (1) KR0130900B1 (de)
DE (1) DE3884778T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2714411B2 (ja) * 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
RU2034889C1 (ru) * 1993-04-02 1995-05-10 Научно-производственное объединение "Алтай" Композиция для суперфинишной доводки поверхности материала
JP2719113B2 (ja) * 1994-05-24 1998-02-25 信越半導体株式会社 単結晶シリコンウェーハの歪付け方法
JPH0982668A (ja) * 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
US5769689A (en) * 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
JP3676030B2 (ja) 1997-04-10 2005-07-27 株式会社東芝 研磨パッドのドレッシング方法及び半導体装置の製造方法
US20090255189A1 (en) * 1998-08-19 2009-10-15 Nanogram Corporation Aluminum oxide particles
US6290735B1 (en) 1997-10-31 2001-09-18 Nanogram Corporation Abrasive particles for surface polishing
US20060147369A1 (en) * 1997-07-21 2006-07-06 Neophotonics Corporation Nanoparticle production and corresponding structures
US7384680B2 (en) * 1997-07-21 2008-06-10 Nanogram Corporation Nanoparticle-based power coatings and corresponding structures
US20090075083A1 (en) * 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US6726990B1 (en) * 1998-05-27 2004-04-27 Nanogram Corporation Silicon oxide particles
US6395194B1 (en) * 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
KR100472882B1 (ko) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
US6350393B2 (en) * 1999-11-04 2002-02-26 Cabot Microelectronics Corporation Use of CsOH in a dielectric CMP slurry
KR20020086949A (ko) * 2000-04-11 2002-11-20 캐보트 마이크로일렉트로닉스 코포레이션 실리콘 옥사이드의 선택적 제거를 위한 시스템
US6811474B2 (en) 2002-07-19 2004-11-02 Cabot Microelectronics Corporation Polishing composition containing conducting polymer
US7021993B2 (en) * 2002-07-19 2006-04-04 Cabot Microelectronics Corporation Method of polishing a substrate with a polishing system containing conducting polymer
DE102005007368A1 (de) 2004-06-16 2006-01-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schmierend wirkende Polymer-Wasser-Mischung
JP4667848B2 (ja) * 2004-12-13 2011-04-13 花王株式会社 ガラス基板用研磨液組成物
US7674716B2 (en) * 2004-12-29 2010-03-09 Lg Chem. Ltd. Adjuvant for chemical mechanical polishing slurry
ATE531895T1 (de) * 2005-02-04 2011-11-15 Oxane Materials Inc Zusammensetzung und verfahren zur herstellung eines stützmittels
US20070068087A1 (en) * 2005-09-26 2007-03-29 Cabot Microelectronics Corporation Metal cations for initiating polishing
KR100786948B1 (ko) 2005-12-08 2007-12-17 주식회사 엘지화학 연마 선택비 조절제 및 이를 함유한 ｃｍｐ 슬러리
KR100786949B1 (ko) 2005-12-08 2007-12-17 주식회사 엘지화학 연마 선택도 조절 보조제 및 이를 함유한 ｃｍｐ 슬러리
CN1986612B (zh) * 2005-12-22 2012-07-25 花王株式会社 玻璃基板用研磨液组合物
US8273142B2 (en) * 2010-09-02 2012-09-25 Cabot Microelectronics Corporation Silicon polishing compositions with high rate and low defectivity
CN106041739B (zh) 2016-05-27 2018-02-23 华侨大学 一种超硬磨料磨具的微生物修整方法
CN115466573B (zh) * 2022-09-05 2024-02-20 广州飞雪芯材有限公司 一种用于单晶硅晶圆片的抛光液及其应用

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4260396A (en) * 1978-01-16 1981-04-07 W. R. Grace & Co. Compositions for polishing silicon and germanium
US4161394A (en) * 1978-06-19 1979-07-17 Regan Glen B Polishing slurry of xanthan gum and a dispersing agent

Also Published As

Publication number Publication date
KR0130900B1 (ko) 1998-04-20
EP0322721A3 (de) 1991-06-19
EP0322721A2 (de) 1989-07-05
EP0322721B1 (de) 1993-10-06
DE3884778D1 (de) 1993-11-11
KR890011024A (ko) 1989-08-12
US4983650A (en) 1991-01-08

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Legal Events

Date Code Title Description
8380 Miscellaneous part iii

Free format text: DER INHABER IST ZU AENDERN IN: E.I. DU PONT DE NEMOURS AND CO., WILMINGTON, DEL., US

8380 Miscellaneous part iii

Free format text: DER INHABER IST ZU AENDERN IN: MONSANTO JAPAN LTD., TOKIO/TOKYO, JP

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MONSANTO PLC, CHINEHAM, BASINGSTOKE, HAMPSHIRE, GB

8328 Change in the person/name/address of the agent

Free format text: LORENZ, E. GOSSEL, H., DIPL.-ING. PHILIPPS, I., DR. SCHAEUBLE, P., DR. JACKERMEIER, S., DR. ZINNECKER, A., DIPL.-ING., RECHTSANWAELTE LAUFHUETTE, D., PAT.-ANW. INGERL, R., DR., RECHTSANW., 80538 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: E.I. DU PONT DE NEMOURS & CO. (N.D.GES. DES STAATE

8328 Change in the person/name/address of the agent

Free format text: WAECHTERSHAEUSER, G., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 80331 MUENCHEN

8339 Ceased/non-payment of the annual fee