DE3877326D1 - Leistungsversorgung. - Google Patents

Leistungsversorgung.

Info

Publication number
DE3877326D1
DE3877326D1 DE8888309840T DE3877326T DE3877326D1 DE 3877326 D1 DE3877326 D1 DE 3877326D1 DE 8888309840 T DE8888309840 T DE 8888309840T DE 3877326 T DE3877326 T DE 3877326T DE 3877326 D1 DE3877326 D1 DE 3877326D1
Authority
DE
Germany
Prior art keywords
power supply
supply
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888309840T
Other languages
English (en)
Other versions
DE3877326T2 (de
Inventor
Bruce Charles Felton
William Barrett Mccoy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3877326D1 publication Critical patent/DE3877326D1/de
Publication of DE3877326T2 publication Critical patent/DE3877326T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)
  • Control Of Electrical Variables (AREA)
DE8888309840T 1987-10-30 1988-10-20 Leistungsversorgung. Expired - Fee Related DE3877326T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/115,141 US4758941A (en) 1987-10-30 1987-10-30 MOSFET fullbridge switching regulator having transformer coupled MOSFET drive circuit

Publications (2)

Publication Number Publication Date
DE3877326D1 true DE3877326D1 (de) 1993-02-18
DE3877326T2 DE3877326T2 (de) 1993-07-22

Family

ID=22359526

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888309840T Expired - Fee Related DE3877326T2 (de) 1987-10-30 1988-10-20 Leistungsversorgung.

Country Status (5)

Country Link
US (1) US4758941A (de)
EP (1) EP0314386B1 (de)
JP (1) JPH07110139B2 (de)
CA (1) CA1293295C (de)
DE (1) DE3877326T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879640A (en) * 1988-06-08 1989-11-07 Das Pawan K ROM driven PWM inverter
US5097229A (en) * 1989-01-12 1992-03-17 Uniphase Corporation Modulator - demodulator transformer coupled d.c. to one mhz information channel
US4916599A (en) * 1989-03-29 1990-04-10 Hyperpower, Inc. Switching power supply
ATE106639T1 (de) * 1989-09-19 1994-06-15 Siemens Ag Verfahren und schaltungsanordnung zum ansteuern eines halbleiterschalters unter verwendung eines induktiven übertragers.
JPH04183275A (ja) * 1990-11-16 1992-06-30 Honda Motor Co Ltd パルス幅変調制御装置
US5315498A (en) * 1992-12-23 1994-05-24 International Business Machines Corporation Apparatus providing leading leg current sensing for control of full bridge power supply
JPH0795774A (ja) * 1993-09-20 1995-04-07 Asia Denshi Kogyo Kk 低ノイズコンバータ
EP1085648B1 (de) * 1995-10-04 2003-05-07 Matsushita Electric Industrial Co., Ltd. Schaltnetzteil
JP3531385B2 (ja) * 1996-10-28 2004-05-31 ソニー株式会社 電源装置
JP2000508868A (ja) * 1997-02-07 2000-07-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ トランジスタ化した２ポート可変コンダクタンス ネットワーク
JP3318240B2 (ja) * 1997-09-12 2002-08-26 松下電器産業株式会社 スイッチング電源装置
US5920473A (en) * 1998-03-09 1999-07-06 Magnetic Technology, Inc. Dc-to-Dc power converter with integrated magnetic power transformer
US5959856A (en) * 1998-03-09 1999-09-28 Magnetic Technology, Inc. DC-to-DC power converter
US6560127B2 (en) * 2000-05-04 2003-05-06 Texas Instruments Incorporated Power conversion circuit having improved zero voltage switching
US6930473B2 (en) 2001-08-23 2005-08-16 Fairchild Semiconductor Corporation Method and circuit for reducing losses in DC-DC converters
DE10161743B4 (de) * 2001-12-15 2004-08-05 Hüttinger Elektronik GmbH & Co. KG Hochfrequenzanregungsanordnung
EP1480339A1 (de) * 2003-05-19 2004-11-24 ABB Technology AG Halbleiterschalteranordnung
US7721232B2 (en) * 2004-11-29 2010-05-18 Infineon Technologies Ag Designated MOSFET and driver design to achieve lowest parasitics in discrete circuits
US7423894B2 (en) * 2006-03-03 2008-09-09 Advanced Energy Industries, Inc. Interleaved soft switching bridge power converter
DE102006038154A1 (de) * 2006-08-16 2008-02-21 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Impulsübertragung und Schaltungsanordnung zur Durchführung dieses Verfahrens
EP2097920B1 (de) * 2007-07-23 2017-08-09 TRUMPF Hüttinger GmbH + Co. KG Plasmaversorgungseinrichtung
US8183892B2 (en) 2009-06-05 2012-05-22 Fairchild Semiconductor Corporation Monolithic low impedance dual gate current sense MOSFET
EP2446524A2 (de) * 2009-06-27 2012-05-02 Microsemi Corporation Durch grenzmodusgekoppelte induktoren verstärkter stromumrichter
US8115460B2 (en) * 2010-01-23 2012-02-14 Moshe Kalechshtein Power conversion with zero voltage switching
US8816606B2 (en) 2010-06-15 2014-08-26 Microsemi Corporation Lips backlight control architecture with low cost dead time transfer
US9729144B2 (en) * 2013-07-31 2017-08-08 Schneider Electric Solar Inverters Usa, Inc. Isolated uni-polar transistor gate drive
US9601990B2 (en) 2013-10-28 2017-03-21 Microsemi Corporation High efficiency PFC power converter
JP2017038186A (ja) * 2015-08-07 2017-02-16 新電元工業株式会社 駆動回路
CN106208711A (zh) * 2016-07-19 2016-12-07 东南大学 一种采用SiC功率管的桥式功率转换器的栅驱动电路
GB2559423B8 (en) * 2017-02-07 2023-06-28 Heyday Integrated Circuits Sas An isolated high side drive circuit
CN109660113A (zh) * 2019-01-16 2019-04-19 中国科学院空间应用工程与技术中心 一种谐振驱动电路
KR102624455B1 (ko) * 2019-04-16 2024-01-11 에스케이하이닉스 주식회사 구동 회로 및 이를 포함하는 광 송신기

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2647958C3 (de) * 1976-10-22 1979-04-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung für einen fremdgesteuerten· Wechselrichter
SU712913A1 (ru) * 1978-07-06 1980-01-30 Рязанский Радиотехнический Институт Транзисторный инвертор
US4319316A (en) * 1979-10-31 1982-03-09 Gould Advance Limited Controlled power supply apparatus
JPS5780274A (en) * 1980-11-05 1982-05-19 Hitachi Ltd Control circuit for field-effect transistor
JPS5825721A (ja) * 1981-08-10 1983-02-16 Nippon Telegr & Teleph Corp <Ntt> Ｍｏｓトランジスタの駆動方法
JPH0642785B2 (ja) * 1984-08-28 1994-06-01 シャープ株式会社 トランジスタインバ−タの駆動回路
EP0177148A3 (de) * 1984-08-29 1987-06-03 Unisys Corporation Leistungsversorgung mit MOSFET-Elementen
US4727874A (en) * 1984-09-10 1988-03-01 C. R. Bard, Inc. Electrosurgical generator with high-frequency pulse width modulated feedback power control
IT1199955B (it) * 1985-02-28 1989-01-05 Selenia Spazio Spa Dispositivo di sincronizzazione della frequenza di invertitori auto-oscillanti(free-running)con trasformatore saturabile di reazione e forma d'onda quadrata della tensione alternativa di uscita

Also Published As

Publication number Publication date
EP0314386A3 (en) 1989-11-29
JPH01122373A (ja) 1989-05-15
DE3877326T2 (de) 1993-07-22
US4758941A (en) 1988-07-19
EP0314386A2 (de) 1989-05-03
JPH07110139B2 (ja) 1995-11-22
EP0314386B1 (de) 1993-01-07
CA1293295C (en) 1991-12-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee