DE3873848D1 - Behandlungsapparat und -verfahren. - Google Patents
Behandlungsapparat und -verfahren.Info
- Publication number
- DE3873848D1 DE3873848D1 DE8888110011T DE3873848T DE3873848D1 DE 3873848 D1 DE3873848 D1 DE 3873848D1 DE 8888110011 T DE8888110011 T DE 8888110011T DE 3873848 T DE3873848 T DE 3873848T DE 3873848 D1 DE3873848 D1 DE 3873848D1
- Authority
- DE
- Germany
- Prior art keywords
- treatment apparatus
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7437987A | 1987-07-16 | 1987-07-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3873848D1 true DE3873848D1 (de) | 1992-09-24 |
DE3873848T2 DE3873848T2 (de) | 1993-03-11 |
Family
ID=22119243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888110011T Expired - Fee Related DE3873848T2 (de) | 1987-07-16 | 1988-06-23 | Behandlungsapparat und -verfahren. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0299248B1 (de) |
JP (1) | JPH01186623A (de) |
KR (1) | KR890002982A (de) |
DE (1) | DE3873848T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2768760B2 (ja) * | 1989-10-19 | 1998-06-25 | 株式会社東芝 | レジストアッシング装置 |
EP0525942A2 (de) * | 1991-05-31 | 1993-02-03 | AT&T Corp. | Herstellungsverfahren von einer integrierten Schaltung unter Verwendung eines doppelschichtigen Photolacks |
JP2846274B2 (ja) * | 1995-06-20 | 1999-01-13 | 芝浦メカトロニクス株式会社 | ドライエッチング装置 |
JP2777085B2 (ja) * | 1995-06-20 | 1998-07-16 | 株式会社芝浦製作所 | ドライエッチング装置 |
JP3587249B2 (ja) * | 2000-03-30 | 2004-11-10 | 東芝セラミックス株式会社 | 流体加熱装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4282267A (en) * | 1979-09-20 | 1981-08-04 | Western Electric Co., Inc. | Methods and apparatus for generating plasmas |
JPS59163826A (ja) * | 1983-03-08 | 1984-09-14 | Toshiba Corp | ドライエツチング方法 |
US4544416A (en) * | 1983-08-26 | 1985-10-01 | Texas Instruments Incorporated | Passivation of silicon oxide during photoresist burnoff |
JPS61263126A (ja) * | 1985-05-16 | 1986-11-21 | Tokyo Denshi Kagaku Kk | 有機膜の除去方法 |
US4613400A (en) * | 1985-05-20 | 1986-09-23 | Applied Materials, Inc. | In-situ photoresist capping process for plasma etching |
JPS6240728A (ja) * | 1985-08-15 | 1987-02-21 | Tokuda Seisakusho Ltd | ドライエツチング装置 |
-
1988
- 1988-06-23 DE DE8888110011T patent/DE3873848T2/de not_active Expired - Fee Related
- 1988-06-23 EP EP88110011A patent/EP0299248B1/de not_active Expired - Lifetime
- 1988-07-14 KR KR1019880008772A patent/KR890002982A/ko not_active Application Discontinuation
- 1988-07-15 JP JP63175336A patent/JPH01186623A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0299248A1 (de) | 1989-01-18 |
EP0299248B1 (de) | 1992-08-19 |
KR890002982A (ko) | 1989-04-12 |
DE3873848T2 (de) | 1993-03-11 |
JPH01186623A (ja) | 1989-07-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |