DE3873171D1 - Vorrichtung zum zonenschmelzen eines halbleiterstabes. - Google Patents
Vorrichtung zum zonenschmelzen eines halbleiterstabes.Info
- Publication number
- DE3873171D1 DE3873171D1 DE8888108273T DE3873171T DE3873171D1 DE 3873171 D1 DE3873171 D1 DE 3873171D1 DE 8888108273 T DE8888108273 T DE 8888108273T DE 3873171 T DE3873171 T DE 3873171T DE 3873171 D1 DE3873171 D1 DE 3873171D1
- Authority
- DE
- Germany
- Prior art keywords
- melting
- stick
- semiconductor
- semiconductor stick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/30—Arrangements for remelting or zone melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62125804A JPS63291888A (ja) | 1987-05-25 | 1987-05-25 | 半導体単結晶製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3873171D1 true DE3873171D1 (de) | 1992-09-03 |
DE3873171T2 DE3873171T2 (de) | 1993-03-04 |
Family
ID=14919316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888108273T Expired - Fee Related DE3873171T2 (de) | 1987-05-25 | 1988-05-24 | Vorrichtung zum zonenschmelzen eines halbleiterstabes. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5009860A (de) |
EP (1) | EP0292919B1 (de) |
JP (1) | JPS63291888A (de) |
DE (1) | DE3873171T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6562132B2 (en) * | 2001-04-04 | 2003-05-13 | Ase Americas, Inc. | EFG crystal growth apparatus and method |
JP5365617B2 (ja) * | 2010-12-14 | 2013-12-11 | 信越半導体株式会社 | 半導体単結晶製造装置及び半導体単結晶の製造方法 |
JP2012162419A (ja) * | 2011-02-07 | 2012-08-30 | Toyota Motor Corp | 単結晶製造装置及び単結晶製造方法 |
CN102808216A (zh) * | 2012-08-22 | 2012-12-05 | 北京京运通科技股份有限公司 | 一种区熔单晶硅生产工艺方法及区熔热场 |
JP6233182B2 (ja) * | 2014-05-15 | 2017-11-22 | 信越半導体株式会社 | 単結晶の製造方法及び単結晶製造装置 |
JP6645376B2 (ja) * | 2016-08-02 | 2020-02-14 | 信越半導体株式会社 | 直径制御装置及びfz単結晶の直径測定方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2898430A (en) * | 1958-03-07 | 1959-08-04 | Citroen Sa Andre | Induction heating devices |
DE1260439B (de) * | 1964-02-08 | 1968-02-08 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
DK138779B (da) * | 1966-06-15 | 1978-10-30 | Siemens Ag | Fremgangsmåde til digelfri zonesmeltning. |
DE1644004A1 (de) * | 1967-04-21 | 1970-04-02 | Siemens Ag | Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes |
DE1644006A1 (de) * | 1967-04-29 | 1970-04-02 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes |
BE789504A (fr) * | 1971-12-07 | 1973-01-15 | Siemens Ag | Bobine de chauffage par induction pour la fusion par zones sanscreuset de barreaux semiconducteurs |
US4045278A (en) * | 1973-11-22 | 1977-08-30 | Siemens Aktiengesellschaft | Method and apparatus for floating melt zone of semiconductor crystal rods |
-
1987
- 1987-05-25 JP JP62125804A patent/JPS63291888A/ja active Pending
-
1988
- 1988-04-20 US US07/184,419 patent/US5009860A/en not_active Expired - Fee Related
- 1988-05-24 EP EP88108273A patent/EP0292919B1/de not_active Expired - Lifetime
- 1988-05-24 DE DE8888108273T patent/DE3873171T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0292919B1 (de) | 1992-07-29 |
US5009860A (en) | 1991-04-23 |
JPH0565476B1 (de) | 1993-09-17 |
DE3873171T2 (de) | 1993-03-04 |
EP0292919A1 (de) | 1988-11-30 |
JPS63291888A (ja) | 1988-11-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |