DE3872551D1 - Verfahren zur herstellung von znse-einkristall. - Google Patents

Verfahren zur herstellung von znse-einkristall.

Info

Publication number
DE3872551D1
DE3872551D1 DE8888104192T DE3872551T DE3872551D1 DE 3872551 D1 DE3872551 D1 DE 3872551D1 DE 8888104192 T DE8888104192 T DE 8888104192T DE 3872551 T DE3872551 T DE 3872551T DE 3872551 D1 DE3872551 D1 DE 3872551D1
Authority
DE
Germany
Prior art keywords
crystal
producing cns
cns
producing
cns crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888104192T
Other languages
English (en)
Other versions
DE3872551T2 (de
Inventor
Tsunemasa Taguchi
Isao Kidoguchi
Hirokuni C Oosaka Works Nanba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PRODUCTION ENG ASS
Sumitomo Electric Industries Ltd
Original Assignee
PRODUCTION ENG ASS
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PRODUCTION ENG ASS, Sumitomo Electric Industries Ltd filed Critical PRODUCTION ENG ASS
Publication of DE3872551D1 publication Critical patent/DE3872551D1/de
Application granted granted Critical
Publication of DE3872551T2 publication Critical patent/DE3872551T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
DE8888104192T 1987-03-18 1988-03-16 Verfahren zur herstellung von znse-einkristall. Expired - Fee Related DE3872551T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62065389A JPH0617280B2 (ja) 1987-03-18 1987-03-18 ＺｎＳｅ単結晶作製法

Publications (2)

Publication Number Publication Date
DE3872551D1 true DE3872551D1 (de) 1992-08-13
DE3872551T2 DE3872551T2 (de) 1993-01-21

Family

ID=13285582

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888104192T Expired - Fee Related DE3872551T2 (de) 1987-03-18 1988-03-16 Verfahren zur herstellung von znse-einkristall.

Country Status (5)

Country Link
US (1) US4866007A (de)
EP (1) EP0282998B1 (de)
JP (1) JPH0617280B2 (de)
CA (1) CA1321124C (de)
DE (1) DE3872551T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264990A (ja) * 1987-11-10 1989-10-23 Toshiba Corp ２−６族化合物半導体の精製方法，２−６族化合物半導体単結晶の製造方法およびこの方法で得られた半導体単結晶を基板として用いた半導体発光素子の製造方法
JPH01231331A (ja) * 1988-03-11 1989-09-14 Seisan Gijutsu Shinko Kyokai 半導体単結晶製造方法
JPH01232732A (ja) * 1988-03-14 1989-09-18 Seisan Gijutsu Shinko Kyokai 半導体結晶製造方法
JP2717256B2 (ja) * 1988-03-16 1998-02-18 社団法人生産技術振興協会 半導体結晶
US5169799A (en) * 1988-03-16 1992-12-08 Sumitomo Electric Industries, Ltd. Method for forming a doped ZnSe single crystal
JPH0259485A (ja) * 1988-08-24 1990-02-28 Matsushita Electric Ind Co Ltd 結晶成長方法
US5028296A (en) * 1989-09-15 1991-07-02 Texas Instruments Incorporated Annealing method
US5248631A (en) * 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
JP3098773B2 (ja) * 1991-03-18 2000-10-16 トラスティーズ・オブ・ボストン・ユニバーシティ 高絶縁性単結晶窒化ガリウム薄膜の作製及びドープ方法
US7235819B2 (en) * 1991-03-18 2007-06-26 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
US6503578B1 (en) 2000-05-05 2003-01-07 National Science Council Method for preparing ZnSe thin films by ion-assisted continuous wave CO2 laser deposition
JP2003124235A (ja) * 2001-10-17 2003-04-25 Sumitomo Electric Ind Ltd Ｉｉ−ｖｉ族化合物半導体、その熱処理方法およびその熱処理装置
MD4266C1 (ro) * 2011-03-17 2014-07-31 Государственный Университет Молд0 Procedeu de obţinere a monocristalului de ZnSe
FR3043698B1 (fr) * 2015-11-13 2019-11-22 Nimesis Technology Procede d'elaboration d'alliages monocristallins a base de cuivre

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3146204A (en) * 1963-04-15 1964-08-25 Gen Electric Preparation of ii-vi semiconducting compounds by solvent extraction
US3939035A (en) * 1971-03-31 1976-02-17 Siemens Aktiengesellschaft Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density
US3957954A (en) * 1974-10-30 1976-05-18 Western Electric Company, Inc. High-temperature reaction method for producing group II-VI or a group III-V compound
DK371977A (da) * 1977-08-22 1979-02-23 Topsil As Fremgangsmaade og apparat til raffinering af halvledermateriale
CA1181557A (en) * 1980-12-29 1985-01-29 Charles B. Willingham Polycrystalline zinc sulfide and zinc selenide articles having improved optical quality
DE3375410D1 (de) * 1982-09-01 1988-02-25 N.V. Philips' Gloeilampenfabrieken
US4547256A (en) * 1982-12-20 1985-10-15 Motorola, Inc. Method for thermally treating a semiconductor substrate
JPS6011293A (ja) * 1983-06-29 1985-01-21 Sumitomo Electric Ind Ltd ＺｎＳｅ単結晶の製造方法
JPH02288106A (ja) * 1989-04-28 1990-11-28 Asahi Glass Co Ltd 抵抗体ペースト及びセラミックス基板

Also Published As

Publication number Publication date
US4866007A (en) 1989-09-12
EP0282998A2 (de) 1988-09-21
JPH0617280B2 (ja) 1994-03-09
EP0282998A3 (en) 1989-08-23
JPS63230599A (ja) 1988-09-27
EP0282998B1 (de) 1992-07-08
DE3872551T2 (de) 1993-01-21
CA1321124C (en) 1993-08-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee