DE3871013D1 - Verfahren zur gewinnung von aluminiumnitrid und daraus hergestelltes sinterprodukt. - Google Patents

Verfahren zur gewinnung von aluminiumnitrid und daraus hergestelltes sinterprodukt.

Info

Publication number
DE3871013D1
DE3871013D1 DE8888112181T DE3871013T DE3871013D1 DE 3871013 D1 DE3871013 D1 DE 3871013D1 DE 8888112181 T DE8888112181 T DE 8888112181T DE 3871013 T DE3871013 T DE 3871013T DE 3871013 D1 DE3871013 D1 DE 3871013D1
Authority
DE
Germany
Prior art keywords
extraction
aluminum nitride
product produced
sinter product
sinter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888112181T
Other languages
English (en)
Inventor
Atsuhiko Hiai
Kazuo Wakimura
Masao Tanaka
Takao Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62187703A external-priority patent/JPS6433009A/ja
Priority claimed from JP63078188A external-priority patent/JPH01252510A/ja
Priority claimed from JP63078189A external-priority patent/JPH01252511A/ja
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Application granted granted Critical
Publication of DE3871013D1 publication Critical patent/DE3871013D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
DE8888112181T 1987-07-29 1988-07-28 Verfahren zur gewinnung von aluminiumnitrid und daraus hergestelltes sinterprodukt. Expired - Fee Related DE3871013D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62187703A JPS6433009A (en) 1987-07-29 1987-07-29 Production of aluminum nitride
JP63078188A JPH01252510A (ja) 1988-04-01 1988-04-01 窒化アルミニウムの製造方法
JP63078189A JPH01252511A (ja) 1988-04-01 1988-04-01 窒化アルミニウムの製造方法

Publications (1)

Publication Number Publication Date
DE3871013D1 true DE3871013D1 (de) 1992-06-17

Family

ID=27302634

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888112181T Expired - Fee Related DE3871013D1 (de) 1987-07-29 1988-07-28 Verfahren zur gewinnung von aluminiumnitrid und daraus hergestelltes sinterprodukt.

Country Status (4)

Country Link
US (2) US4869925A (de)
EP (1) EP0301529B1 (de)
KR (1) KR910001820B1 (de)
DE (1) DE3871013D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2765885B2 (ja) * 1988-11-14 1998-06-18 新光電気工業株式会社 窒化アルミニウム回路基板及びその製造方法
EP0385096B1 (de) * 1989-01-27 1995-08-30 MITSUI TOATSU CHEMICALS, Inc. Verfahren zur Herstellung von kristallinem, sinterfähigem Aluminiumnitridpulver
JP2935504B2 (ja) * 1989-07-05 1999-08-16 キヤノン株式会社 モータ
US5178911A (en) * 1989-11-30 1993-01-12 The President And Fellows Of Harvard College Process for chemical vapor deposition of main group metal nitrides
US5096860A (en) * 1990-05-25 1992-03-17 Alcan International Limited Process for producing unagglomerated single crystals of aluminum nitride
US5508239A (en) * 1990-09-07 1996-04-16 E. I. Du Pont De Nemours And Company High strength aluminum nitride fibers and composites and processes for the preparation thereof
US5212125A (en) * 1990-11-20 1993-05-18 The Carborundum Company Process for sintering aluminum nitride using organometallic compounds
JP3214890B2 (ja) * 1991-05-30 2001-10-02 京セラ株式会社 窒化アルミニウム焼結体およびその製法、並びにそれを用いた焼成用治具
US5190738A (en) * 1991-06-17 1993-03-02 Alcan International Limited Process for producing unagglomerated single crystals of aluminum nitride
US5455322A (en) * 1992-06-12 1995-10-03 Lanxide Technology Company, Lp Aluminum nitride from inorganic polymers
JP3633636B2 (ja) * 1993-02-05 2005-03-30 住友電気工業株式会社 窒化アルミニウム焼結体
JPH07109573A (ja) * 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
FR2722492B1 (fr) * 1994-07-12 1997-03-14 Sumitomo Chemical Co Poudre de nitrure d'aluminium et corps fritte et composition de resine la contenant
JP3891076B2 (ja) * 2001-11-13 2007-03-07 株式会社茨木研究所 窒化アルミニウムの製造方法
JP4939932B2 (ja) * 2004-03-29 2012-05-30 電気化学工業株式会社 窒化アルミニウム粉末及びその製造方法
TW200607754A (en) * 2004-07-08 2006-03-01 Mitsui Chemicals Inc Aluminum nitride powder, method for producing the same and use thereof
CN100372639C (zh) * 2004-07-08 2008-03-05 三井化学株式会社 氮化铝粉末及其制造方法和用途
WO2007090288A1 (en) * 2006-02-09 2007-08-16 Northern Digital Inc. Retroreflective marker-tracking systems
KR101399694B1 (ko) * 2012-02-13 2014-05-30 영남대학교 산학협력단 질화알루미늄 분말 제조 방법
JP6149668B2 (ja) * 2012-10-11 2017-06-21 宇部興産株式会社 Ａｌ−Ｎ−Ｈ系化合物粉末及びその製造方法
GB2507814A (en) 2012-11-13 2014-05-14 Sharp Kk A method of synthesising nitride nanocrystals using organometallics
CN109019536A (zh) * 2018-08-27 2018-12-18 陕西师范大学 一种制备纳米氮化铝粉末的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256792A (en) * 1980-01-25 1981-03-17 Honeywell Inc. Composite electronic substrate of alumina uniformly needled through with aluminum nitride
JPS5855377A (ja) * 1981-09-28 1983-04-01 株式会社東芝 窒化アルミニウム焼結体の製造方法
DE3247985C2 (de) * 1982-12-24 1992-04-16 W.C. Heraeus Gmbh, 6450 Hanau Keramischer Träger
DE3587481T2 (de) * 1984-02-27 1993-12-16 Toshiba Kawasaki Kk Schaltungssubstrat mit hoher Wärmeleitfähigkeit.
US4783430A (en) * 1986-04-25 1988-11-08 Gte Laboratories Incorporated Process of making high purity aluminum nitride
US4740574A (en) * 1986-05-09 1988-04-26 E. I. Du Pont De Nemours And Company Aluminum nitride structures
US4775596A (en) * 1987-02-18 1988-10-04 Corning Glass Works Composite substrate for integrated circuits

Also Published As

Publication number Publication date
EP0301529A1 (de) 1989-02-01
KR910001820B1 (ko) 1991-03-26
US4869925A (en) 1989-09-26
US4983462A (en) 1991-01-08
EP0301529B1 (de) 1992-05-13
KR890002436A (ko) 1989-04-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee