DE3786807D1 - Halbleiterbauelement mit variabler kapazitaet. - Google Patents

Halbleiterbauelement mit variabler kapazitaet.

Info

Publication number
DE3786807D1
DE3786807D1 DE8787300722T DE3786807T DE3786807D1 DE 3786807 D1 DE3786807 D1 DE 3786807D1 DE 8787300722 T DE8787300722 T DE 8787300722T DE 3786807 T DE3786807 T DE 3786807T DE 3786807 D1 DE3786807 D1 DE 3786807D1
Authority
DE
Germany
Prior art keywords
capacitance
electrode
semiconductor component
bias
variable capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787300722T
Other languages
English (en)
Other versions
DE3786807T2 (de
Inventor
Yoshio Seiko Instrumen Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of DE3786807D1 publication Critical patent/DE3786807D1/de
Application granted granted Critical
Publication of DE3786807T2 publication Critical patent/DE3786807T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19873786807 1986-01-31 1987-01-28 Halbleiterbauelement mit variabler Kapazität. Expired - Fee Related DE3786807T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1962286A JPS62179162A (ja) 1986-01-31 1986-01-31 半導体可変容量素子

Publications (2)

Publication Number Publication Date
DE3786807D1 true DE3786807D1 (de) 1993-09-09
DE3786807T2 DE3786807T2 (de) 1993-11-11

Family

ID=12004287

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873786807 Expired - Fee Related DE3786807T2 (de) 1986-01-31 1987-01-28 Halbleiterbauelement mit variabler Kapazität.

Country Status (3)

Country Link
EP (1) EP0232117B1 (de)
JP (1) JPS62179162A (de)
DE (1) DE3786807T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01125987A (ja) * 1987-11-11 1989-05-18 Seiko Instr & Electron Ltd 半導体可変容量素子
JP3877597B2 (ja) * 2002-01-21 2007-02-07 シャープ株式会社 マルチ端子型ｍｏｓバラクタ
US20040206999A1 (en) * 2002-05-09 2004-10-21 Impinj, Inc., A Delaware Corporation Metal dielectric semiconductor floating gate variable capacitor
CN1669155A (zh) * 2002-05-09 2005-09-14 伊皮杰有限公司 伪非易失性直接隧穿浮栅器件
JP5868682B2 (ja) * 2011-12-01 2016-02-24 株式会社ソシオネクスト 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166080A (en) * 1981-04-07 1982-10-13 Seiko Instr & Electronics Ltd Semiconductor variable capacity element
JPS5853864A (ja) * 1981-09-25 1983-03-30 Seiko Instr & Electronics Ltd 半導体可変容量素子
JPS59105378A (ja) * 1982-12-09 1984-06-18 Seiko Instr & Electronics Ltd 半導体可変容量素子
JPS60147169A (ja) * 1984-01-10 1985-08-03 Seiko Instr & Electronics Ltd 半導体可変容量素子

Also Published As

Publication number Publication date
EP0232117A3 (en) 1989-07-19
JPS62179162A (ja) 1987-08-06
EP0232117B1 (de) 1993-08-04
JPH0362310B2 (de) 1991-09-25
EP0232117A2 (de) 1987-08-12
DE3786807T2 (de) 1993-11-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee