DE3680408D1 - Ionenimplantations-verfahren und -vorrichtung mit genauigkeit der ionendosis. - Google Patents

Ionenimplantations-verfahren und -vorrichtung mit genauigkeit der ionendosis.

Info

Publication number
DE3680408D1
DE3680408D1 DE8686303919T DE3680408T DE3680408D1 DE 3680408 D1 DE3680408 D1 DE 3680408D1 DE 8686303919 T DE8686303919 T DE 8686303919T DE 3680408 T DE3680408 T DE 3680408T DE 3680408 D1 DE3680408 D1 DE 3680408D1
Authority
DE
Germany
Prior art keywords
ion
accuracy
implantation method
dose
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686303919T
Other languages
English (en)
Inventor
Norman Leonard Turner
John D Pollock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Application granted granted Critical
Publication of DE3680408D1 publication Critical patent/DE3680408D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE8686303919T 1985-05-22 1986-05-22 Ionenimplantations-verfahren und -vorrichtung mit genauigkeit der ionendosis. Expired - Fee Related DE3680408D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/736,888 US4680474A (en) 1985-05-22 1985-05-22 Method and apparatus for improved ion dose accuracy

Publications (1)

Publication Number Publication Date
DE3680408D1 true DE3680408D1 (de) 1991-08-29

Family

ID=24961740

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686303919T Expired - Fee Related DE3680408D1 (de) 1985-05-22 1986-05-22 Ionenimplantations-verfahren und -vorrichtung mit genauigkeit der ionendosis.

Country Status (5)

Country Link
US (1) US4680474A (de)
EP (1) EP0209969B1 (de)
JP (1) JP2569311B2 (de)
KR (1) KR940007875B1 (de)
DE (1) DE3680408D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031674A (en) * 1989-03-03 1991-07-16 Eaton Corporation Fluid flow control method and apparatus for minimizing particle contamination
EP0462554B1 (de) * 1990-06-20 2000-10-11 Hitachi, Ltd. Ladungsträgerstrahlgerät
JP2973706B2 (ja) * 1992-06-08 1999-11-08 株式会社日立製作所 イオンビーム照射装置
KR100303075B1 (ko) 1992-11-06 2001-11-30 조셉 제이. 스위니 집적회로 웨이퍼 이송 방법 및 장치
KR970052183A (ko) * 1995-12-30 1997-07-29 김주용 이온 빔 각도 조정이 가능한 이온 주입기
US5760409A (en) * 1996-06-14 1998-06-02 Eaton Corporation Dose control for use in an ion implanter
FR2756973B1 (fr) * 1996-12-09 1999-01-08 Commissariat Energie Atomique Procede d'introduction d'une phase gazeuse dans une cavite fermee
US6328803B2 (en) * 1997-02-21 2001-12-11 Micron Technology, Inc. Method and apparatus for controlling rate of pressure change in a vacuum process chamber
US5814819A (en) * 1997-07-11 1998-09-29 Eaton Corporation System and method for neutralizing an ion beam using water vapor
JP2001516129A (ja) 1997-08-13 2001-09-25 バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド リニア気体軸受け及びアクティブカウンターバランスオプションを有するスキャニングシステム
US6297510B1 (en) 1999-04-19 2001-10-02 Applied Materials, Inc. Ion implant dose control
US6458430B1 (en) 1999-12-22 2002-10-01 Axcelis Technologies, Inc. Pretreatment process for plasma immersion ion implantation
US6568896B2 (en) 2001-03-21 2003-05-27 Applied Materials, Inc. Transfer chamber with side wall port
US6583421B2 (en) 2001-10-11 2003-06-24 Diamond Semiconductor Group, Llc Charge measuring device with wide dynamic range
US7009193B2 (en) * 2003-10-31 2006-03-07 Infineon Technologies Richmond, Lp Utilization of an ion gauge in the process chamber of a semiconductor ion implanter
JP4219295B2 (ja) * 2004-03-31 2009-02-04 シャープ株式会社 イオン注入装置
DE602005016258D1 (de) * 2005-09-27 2009-10-08 Sharp Kk Vorrichtung zur Ionenimplantation
WO2007067552A2 (en) * 2005-12-07 2007-06-14 Varian Semiconductor Equipment Associates, Inc. Techniques for preventing parasitic beamlets from affecting ion implantation
US11562885B2 (en) * 2020-07-28 2023-01-24 Applied Materials, Inc. Particle yield via beam-line pressure control

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371774A (en) * 1980-11-26 1983-02-01 The United States Of America As Represented By The United States Department Of Energy High power linear pulsed beam annealer
JPS57174467A (en) * 1981-04-20 1982-10-27 Inoue Japax Res Inc Ion working device
US4449885A (en) * 1982-05-24 1984-05-22 Varian Associates, Inc. Wafer transfer system
US4851691A (en) * 1982-11-19 1989-07-25 Varian Associates, Inc. Method for photoresist pretreatment prior to charged particle beam processing
JPH0426456Y2 (de) * 1984-10-19 1992-06-25

Also Published As

Publication number Publication date
EP0209969A2 (de) 1987-01-28
KR940007875B1 (ko) 1994-08-26
EP0209969B1 (de) 1991-07-24
JPS61271739A (ja) 1986-12-02
KR860009478A (ko) 1986-12-23
JP2569311B2 (ja) 1997-01-08
US4680474A (en) 1987-07-14
EP0209969A3 (en) 1988-11-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee