DE3584515D1 - Waermesenke unter verwendung eines gesinterten koerpers mit hoher waermeleitfaehigkeit und verfahren zu ihrer herstellung. - Google Patents

Waermesenke unter verwendung eines gesinterten koerpers mit hoher waermeleitfaehigkeit und verfahren zu ihrer herstellung.

Info

Publication number
DE3584515D1
DE3584515D1 DE8585116660T DE3584515T DE3584515D1 DE 3584515 D1 DE3584515 D1 DE 3584515D1 DE 8585116660 T DE8585116660 T DE 8585116660T DE 3584515 T DE3584515 T DE 3584515T DE 3584515 D1 DE3584515 D1 DE 3584515D1
Authority
DE
Germany
Prior art keywords
production
sintered body
heat sink
high heat
heat conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585116660T
Other languages
English (en)
Inventor
Hitoshi C O Itami Works Sumiya
Shuichi C O Itami Works O Sato
Shuji C O Itami Works Of Yazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1985002565U external-priority patent/JPS61119352U/ja
Priority claimed from JP60117179A external-priority patent/JPS61275168A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3584515D1 publication Critical patent/DE3584515D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731Ceramic materials or glass
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C04B35/5831Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/89Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE8585116660T 1985-01-11 1985-12-31 Waermesenke unter verwendung eines gesinterten koerpers mit hoher waermeleitfaehigkeit und verfahren zu ihrer herstellung. Expired - Fee Related DE3584515D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1985002565U JPS61119352U (de) 1985-01-11 1985-01-11
JP60117179A JPS61275168A (ja) 1985-05-30 1985-05-30 高熱伝導性焼結体およびその製造方法

Publications (1)

Publication Number Publication Date
DE3584515D1 true DE3584515D1 (de) 1991-11-28

Family

ID=26335969

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585116660T Expired - Fee Related DE3584515D1 (de) 1985-01-11 1985-12-31 Waermesenke unter verwendung eines gesinterten koerpers mit hoher waermeleitfaehigkeit und verfahren zu ihrer herstellung.

Country Status (3)

Country Link
EP (1) EP0194358B1 (de)
CA (1) CA1275560C (de)
DE (1) DE3584515D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3915116C1 (en) * 1989-05-09 1990-11-15 Sintec Keramik Gmbh, 8959 Buching, De Electrically non-conducting crucible - includes pyrolytic carbon layer and aluminium nitride or aluminium oxide-contg. ceramic
US5205353A (en) * 1989-11-30 1993-04-27 Akzo N.V. Heat exchanging member
EP0529837B1 (de) * 1991-08-26 1996-05-29 Sun Microsystems, Inc. Verfahren und Apparat zum Kühlen von Mehrchip-Moduln durch die vollständige Wärmerohr-Technologie
WO1999004439A1 (de) * 1997-07-15 1999-01-28 Sbalzarini Ivo F Thermoelektrisches wandlerelement hohen wirkungsgrades und anwendungen desselben

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE620627A (de) * 1961-07-10
DE2111180C3 (de) * 1971-03-09 1973-10-11 Institut Fisiki Twojordowo Tela I Poluprowodnikow Akademii Nauk Belorusskoj Ssr, Minsk (Sowjetunion) Verfahren zur Herstellung von kubi schem Bornitrid
US3894850A (en) * 1973-10-19 1975-07-15 Jury Matveevich Kovalchuk Superhard composition material based on cubic boron nitride and a method for preparing same
FR2344642A1 (fr) * 1976-03-16 1977-10-14 Thomson Csf Procede de realisation de depots metalliques sur des supports en nitrure de bore
US4188194A (en) * 1976-10-29 1980-02-12 General Electric Company Direct conversion process for making cubic boron nitride from pyrolytic boron nitride
IN150013B (de) * 1977-07-01 1982-06-26 Gen Electric
JPS5560008A (en) * 1978-10-23 1980-05-06 Natl Inst For Res In Inorg Mater Production of cubic system boron nitride
JPS5837713B2 (ja) * 1978-12-01 1983-08-18 富士通株式会社 半導体レ−ザ−装置の製造方法
JPS6039739B2 (ja) * 1979-01-13 1985-09-07 日本特殊陶業株式会社 高密度立方晶窒化硼素焼結体
GB2051474B (en) * 1979-06-19 1984-04-26 Aei Semiconductors Ltd Mounting arrangements for electrical components
US4409193A (en) * 1981-03-06 1983-10-11 National Institute For Researches In Inorganic Materials Process for preparing cubic boron nitride
JPS595547B2 (ja) * 1982-04-07 1984-02-06 科学技術庁無機材質研究所長 立方晶系窒化ほう素の焼結体の製造法
GB8328474D0 (en) * 1983-10-25 1983-11-23 Plessey Co Plc Diamond heatsink assemblies

Also Published As

Publication number Publication date
EP0194358A1 (de) 1986-09-17
CA1275560C (en) 1990-10-30
EP0194358B1 (de) 1991-10-23

Similar Documents

Publication Publication Date Title
DE3582576D1 (de) Dithioketo-pyrrolo-pyrrole, verfahren zu deren herstellung und verwendung.
ATA76286A (de) Glaskörperchen mit modifizierter benetzbarkeit, verfahren zu deren herstellung und verwendung derselben
ATE166049T1 (de) Phthalimidoperoxihexansäure, verfahren zu deren herstellung und deren verwendung
DE3682874D1 (de) Pyranoindolizinderivate und verfahren zu ihrer herstellung.
DE3782470D1 (de) Keramikwerkstoff mit hoher dielektrischer konstante, sowie verfahren zu seiner herstellung.
DE3678857D1 (de) Keramikverbundkoerper und verfahren zu ihrer herstellung.
DE3575363D1 (de) Halbleiter mit flachen, hyperabrupt dotierten gebieten und verfahren zu ihrer herstellung unter verwendung ionenimplantierter stoerstoffe.
DE68907057D1 (de) Naehrstoffzusammensetzung und verfahren zu deren herstellung.
ATA326483A (de) Glaskuegelchen mit modifizierter oberflaeche, verfahren zu deren herstellung und verwendung derselben
DE3576950D1 (de) Lichtleitfaser mit fluordotierung und verfahren zu deren herstellung.
DE3775314D1 (de) Feststoffraketentreibsatzgefuege mit hohem feststoffanteil und verfahren zu dessen herstellung.
DE3682959D1 (de) Bipolarer transistor mit heterouebergang und verfahren zu seiner herstellung.
DE3574475D1 (de) Dextranhexonsaeureverbindung, komplex mit ferrihydroxyd und verfahren zu deren herstellung.
DE3582238D1 (de) Keramikwerkstoff mit hoher zaehigkeit und verfahren zu seiner herstellung.
DE3484666D1 (de) Halbleiteranordnung mit heterouebergang und verfahren zu deren herstellung.
DE3677740D1 (de) 2-iod-perfluor-2-methylalkane, verfahren zu deren herstellung und deren verwendung.
DE3782534D1 (de) Pechbasierte kohlenstoffasern mit hohem elastizitaetsmodul und verfahren zu deren herstellung.
DE68911142D1 (de) Olefinoligomere mit schmierungseigenschaften und verfahren zu ihrer herstellung.
DE3677812D1 (de) Polyhydroxypolyether, verfahren zu ihrer herstellung und ihre verwendung.
DE3680352D1 (de) Leitfaehigkeitsmodulations-halbleiteranordnung und verfahren zu ihrer herstellung.
DE3586525D1 (de) Halbleiteranordnung mit einer integrierten schaltung und verfahren zu deren herstellung.
ATA50989A (de) Antiviral und immunstimulierend wirkende neue salze, sowie verfahren zu deren herstellung und verwendung der salze
DE3676536D1 (de) Halbleiteranordnung mit einer elektrode kurzer laenge und verfahren zu deren herstellung.
DE3767119D1 (de) Styrylaryloxy-ethersulfonate, verfahren zu deren herstellung und deren verwendung bei der erdoelfoerderung.
DE3782599D1 (de) Laser mit monolitisch integrierten, planaren elementen und verfahren zu deren herstellung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8339 Ceased/non-payment of the annual fee