DE3581295D1 - Plasma-aetzverfahren. - Google Patents

Plasma-aetzverfahren.

Info

Publication number
DE3581295D1
DE3581295D1 DE8585100405T DE3581295T DE3581295D1 DE 3581295 D1 DE3581295 D1 DE 3581295D1 DE 8585100405 T DE8585100405 T DE 8585100405T DE 3581295 T DE3581295 T DE 3581295T DE 3581295 D1 DE3581295 D1 DE 3581295D1
Authority
DE
Germany
Prior art keywords
etching process
plasma etching
plasma
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585100405T
Other languages
English (en)
Inventor
Lee Chen
Henri Antoine Khoury
Harlan Richardson Seymour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3581295D1 publication Critical patent/DE3581295D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
DE8585100405T 1984-01-31 1985-01-17 Plasma-aetzverfahren. Expired - Fee Related DE3581295D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/575,611 US4493745A (en) 1984-01-31 1984-01-31 Optical emission spectroscopy end point detection in plasma etching

Publications (1)

Publication Number Publication Date
DE3581295D1 true DE3581295D1 (de) 1991-02-21

Family

ID=24301010

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585100405T Expired - Fee Related DE3581295D1 (de) 1984-01-31 1985-01-17 Plasma-aetzverfahren.

Country Status (4)

Country Link
US (1) US4493745A (de)
EP (1) EP0151947B1 (de)
JP (1) JPS60170940A (de)
DE (1) DE3581295D1 (de)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4647172A (en) * 1985-05-17 1987-03-03 Gca Corporation Resist development method
JP2635021B2 (ja) * 1985-09-26 1997-07-30 宣夫 御子柴 堆積膜形成法及びこれに用いる装置
JPH0797574B2 (ja) * 1986-01-29 1995-10-18 株式会社日立製作所 プラズマ処理のプロセス制御方法
US4675072A (en) * 1986-06-25 1987-06-23 International Business Machines Corporation Trench etch endpoint detection by LIF
US4710261A (en) * 1987-01-28 1987-12-01 Rca Corporation Apparatus and method for maintaining a uniform etching solution composition
US4713140A (en) * 1987-03-02 1987-12-15 International Business Machines Corporation Laser luminescence monitor for material thickness
US4847792A (en) * 1987-05-04 1989-07-11 Texas Instruments Incorporated Process and apparatus for detecting aberrations in production process operations
JP2564312B2 (ja) * 1987-07-17 1996-12-18 株式会社日立製作所 エッチング終点判定方法および装置
US4861419A (en) * 1987-08-04 1989-08-29 Texas Instruments Incorporated Apparatus and method for production process diagnosis using dynamic time warping
US4846928A (en) * 1987-08-04 1989-07-11 Texas Instruments, Incorporated Process and apparatus for detecting aberrations in production process operations
US4859277A (en) * 1988-05-03 1989-08-22 Texas Instruments Incorporated Method for measuring plasma properties in semiconductor processing
US5045149A (en) * 1988-10-24 1991-09-03 Vlsi Technology, Inc. Method and apparatus for end point detection
US5014217A (en) * 1989-02-09 1991-05-07 S C Technology, Inc. Apparatus and method for automatically identifying chemical species within a plasma reactor environment
US5223914A (en) * 1989-04-28 1993-06-29 International Business Machines Corporation Follow-up system for etch process monitoring
US5118378A (en) * 1989-10-10 1992-06-02 Hitachi, Ltd. Apparatus for detecting an end point of etching
US5087815A (en) * 1989-11-08 1992-02-11 Schultz J Albert High resolution mass spectrometry of recoiled ions for isotopic and trace elemental analysis
DE4016211A1 (de) * 1990-05-19 1991-11-21 Convac Gmbh Verfahren zur ueberwachung und steuerung eines aetzvorgangs und vorrichtung hierfuer
DE69123808T2 (de) * 1990-09-26 1997-06-26 Hitachi Ltd Verfahren und Gerät zur Bearbeitung mittels Mikrowellenplasma
US5389205A (en) * 1990-11-23 1995-02-14 Valmet Paper Machinery, Inc. Method for dewatering of a paper web by pressing using an extended nip shoe pre-press zone on the forming wire
US5362356A (en) * 1990-12-20 1994-11-08 Lsi Logic Corporation Plasma etching process control
US5290383A (en) * 1991-03-24 1994-03-01 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
GB2257507B (en) * 1991-06-26 1995-03-01 Digital Equipment Corp Semiconductor wafer processing with across-wafer critical dimension monitoring using optical endpoint detection
AU4689293A (en) * 1992-07-15 1994-02-14 On-Line Technologies, Inc. Method and apparatus for monitoring layer processing
US5347460A (en) * 1992-08-25 1994-09-13 International Business Machines Corporation Method and system employing optical emission spectroscopy for monitoring and controlling semiconductor fabrication
US5288367A (en) * 1993-02-01 1994-02-22 International Business Machines Corporation End-point detection
US5421934A (en) * 1993-03-26 1995-06-06 Matsushita Electric Industrial Co., Ltd. Dry-etching process simulator
US5326975A (en) * 1993-06-15 1994-07-05 Texas Instruments Incorporated Measurement of gas leaks into gas lines of a plasma reactor
US5546322A (en) * 1994-04-12 1996-08-13 International Business Machines Corporation Method and system for analyzing plasma data
US5738756A (en) * 1995-06-30 1998-04-14 Lam Research Corporation Method and apparatus for detecting optimal endpoints in plasma etch processes
US5780315A (en) * 1995-09-11 1998-07-14 Taiwan Semiconductor Manufacturing Company, Ltd Dry etch endpoint method
JP3766991B2 (ja) * 1995-10-20 2006-04-19 株式会社日立製作所 プラズマ処理の終点検出方法及び装置、並びに本検出方法及び装置を用いた半導体製造方法及び装置
US5654903A (en) * 1995-11-07 1997-08-05 Lucent Technologies Inc. Method and apparatus for real time monitoring of wafer attributes in a plasma etch process
US5928967A (en) * 1996-06-10 1999-07-27 International Business Machines Corporation Selective oxide-to-nitride etch process using C4 F8 /CO/Ar
US5821502A (en) * 1996-07-01 1998-10-13 Boeing North American, Inc. System for providing in-situ temperature monitoring and temperature control of a specimen being exposed to plasma environments
US6649075B1 (en) 1996-07-23 2003-11-18 Applied Materials, Inc. Method and apparatus for measuring etch uniformity of a semiconductor wafer
US5972796A (en) * 1996-12-12 1999-10-26 Texas Instruments Incorporated In-situ barc and nitride etch process
US5871658A (en) * 1997-01-13 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers
DE19730644C1 (de) * 1997-07-17 1998-11-19 Bosch Gmbh Robert Verfahren zum Erkennen des Übergangs unterschiedlicher Materialien in Halbleiterstrukturen bei einer anisotropen Tiefenätzung
US6129807A (en) 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
US6184687B1 (en) * 1997-10-20 2001-02-06 Kabushiki Kaisha Toshiba Plasma process end point determination method and apparatus, and plasma evaluation method and apparatus
US6261470B1 (en) 1998-04-23 2001-07-17 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6090302A (en) * 1998-04-23 2000-07-18 Sandia Method and apparatus for monitoring plasma processing operations
US6246473B1 (en) 1998-04-23 2001-06-12 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6221679B1 (en) * 1998-04-23 2001-04-24 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6157447A (en) * 1998-04-23 2000-12-05 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6223755B1 (en) 1998-04-23 2001-05-01 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6419801B1 (en) 1998-04-23 2002-07-16 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6275740B1 (en) 1998-04-23 2001-08-14 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6077386A (en) * 1998-04-23 2000-06-20 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6123983A (en) * 1998-04-23 2000-09-26 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6165312A (en) * 1998-04-23 2000-12-26 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6269278B1 (en) 1998-04-23 2001-07-31 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6169933B1 (en) 1998-04-23 2001-01-02 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6134005A (en) * 1998-04-23 2000-10-17 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6132577A (en) * 1998-04-23 2000-10-17 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6192826B1 (en) 1998-04-23 2001-02-27 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6254717B1 (en) 1998-04-23 2001-07-03 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6068783A (en) * 1998-04-28 2000-05-30 Winbond Electronics Corp In-situ and non-intrusive method for monitoring plasma etch chamber condition utilizing spectroscopic technique
US6180422B1 (en) 1998-05-06 2001-01-30 International Business Machines Corporation Endpoint detection by chemical reaction
US6126848A (en) * 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
US6228769B1 (en) 1998-05-06 2001-05-08 International Business Machines Corporation Endpoint detection by chemical reaction and photoionization
US6066564A (en) * 1998-05-06 2000-05-23 International Business Machines Corporation Indirect endpoint detection by chemical reaction
US6228280B1 (en) 1998-05-06 2001-05-08 International Business Machines Corporation Endpoint detection by chemical reaction and reagent
US6194230B1 (en) 1998-05-06 2001-02-27 International Business Machines Corporation Endpoint detection by chemical reaction and light scattering
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
US6251784B1 (en) 1998-12-08 2001-06-26 International Business Machines Corporation Real-time control of chemical-mechanical polishing processing by monitoring ionization current
US6077387A (en) * 1999-02-10 2000-06-20 Stmicroelectronics, Inc. Plasma emission detection for process control via fluorescent relay
US6176765B1 (en) 1999-02-16 2001-01-23 International Business Machines Corporation Accumulator for slurry sampling
JP3228272B2 (ja) * 1999-07-14 2001-11-12 日本電気株式会社 半導体装置のレイアウト設計方法及び装置並びに記録媒体
WO2001013401A1 (de) * 1999-08-12 2001-02-22 Infineon Technologies Ag Verfahren zur überwachung eines herstellungsprozesses zur bearbeitung eines substrats in der halbleiterfertigung
US6449038B1 (en) * 1999-12-13 2002-09-10 Applied Materials, Inc. Detecting a process endpoint from a change in reflectivity
KR100473856B1 (ko) * 2000-12-28 2005-03-07 (주)쎄미시스코 플라즈마 챔버의 공정 상태 관찰방법
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
TW589690B (en) * 2001-03-07 2004-06-01 United Microelectronics Corp On-line monitoring silicon nitride loss method
WO2002084724A1 (fr) * 2001-04-09 2002-10-24 Matsushita Electric Industrial Co., Ltd. Procede de traitement de surface et systeme de fabrication d'un dispositif a semi-conducteur
US6491569B2 (en) 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
US7577320B2 (en) * 2001-10-26 2009-08-18 Infinera Corporation Low loss lateral optical waveguide intersections
US7355687B2 (en) * 2003-02-20 2008-04-08 Hunter Engineering Company Method and apparatus for vehicle service system with imaging components
US7291360B2 (en) * 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US20050211547A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma reactor and process using plural ion shower grids
US20050211171A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having an ion shower grid
US7695590B2 (en) * 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US20050211546A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma process using an ion shower grid
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7312865B2 (en) * 2004-03-31 2007-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for in situ monitoring of chamber peeling
US8058156B2 (en) * 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7767561B2 (en) * 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US7534725B2 (en) 2007-03-21 2009-05-19 Taiwan Semiconductor Manufacturing Company Advanced process control for semiconductor processing
US7634325B2 (en) * 2007-05-03 2009-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Prediction of uniformity of a wafer
US20090103074A1 (en) * 2007-10-17 2009-04-23 Tribofilm Research, Inc. Methods for Performing Quality Control of Process to Treat a Surface
JP5808592B2 (ja) * 2011-07-04 2015-11-10 浜松ホトニクス株式会社 基準電圧決定方法及び推奨動作電圧決定方法
CN113496887B (zh) * 2020-04-03 2023-06-02 重庆超硅半导体有限公司 一种集成电路用硅片的均匀腐蚀方法
CN114724915A (zh) * 2022-03-02 2022-07-08 北京航空航天大学 刻蚀终点检测方法及装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198261A (en) * 1977-12-05 1980-04-15 Gould Inc. Method for end point detection during plasma etching
US4208240A (en) * 1979-01-26 1980-06-17 Gould Inc. Method and apparatus for controlling plasma etching
JPS55150919A (en) * 1979-05-11 1980-11-25 Hitachi Ltd Plasma etching method and its apparatus
US4263088A (en) * 1979-06-25 1981-04-21 Motorola, Inc. Method for process control of a plasma reaction
JPS56125811A (en) * 1980-03-06 1981-10-02 Toshiba Corp Winding of stationary induction apparatus
JPS6058793B2 (ja) * 1980-03-24 1985-12-21 日電アネルバ株式会社 プラズマ分光監視装置
US4328068A (en) * 1980-07-22 1982-05-04 Rca Corporation Method for end point detection in a plasma etching process
JPS5773181A (en) * 1980-10-24 1982-05-07 Toshiba Corp Reactive ion etching method

Also Published As

Publication number Publication date
EP0151947A3 (en) 1988-04-27
US4493745A (en) 1985-01-15
EP0151947B1 (de) 1991-01-16
EP0151947A2 (de) 1985-08-21
JPS60170940A (ja) 1985-09-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee