DE3581224D1 - Resonatornahe bereiche in einem halbleiterlaser vom typ vsis. - Google Patents
Resonatornahe bereiche in einem halbleiterlaser vom typ vsis.Info
- Publication number
- DE3581224D1 DE3581224D1 DE8585301977T DE3581224T DE3581224D1 DE 3581224 D1 DE3581224 D1 DE 3581224D1 DE 8585301977 T DE8585301977 T DE 8585301977T DE 3581224 T DE3581224 T DE 3581224T DE 3581224 D1 DE3581224 D1 DE 3581224D1
- Authority
- DE
- Germany
- Prior art keywords
- vsis
- resonator
- areas near
- temperature laser
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5504884A JPS60198794A (ja) | 1984-03-21 | 1984-03-21 | 半導体レ−ザ素子 |
JP5504984A JPS60198795A (ja) | 1984-03-21 | 1984-03-21 | 半導体レ−ザ素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3581224D1 true DE3581224D1 (de) | 1991-02-14 |
Family
ID=26395894
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE90107944T Expired - Fee Related DE3587619T2 (de) | 1984-03-21 | 1985-03-21 | Halbleiterlaser vom Typ VSIS mit Fensterbereich. |
DE8585301977T Expired - Lifetime DE3581224D1 (de) | 1984-03-21 | 1985-03-21 | Resonatornahe bereiche in einem halbleiterlaser vom typ vsis. |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE90107944T Expired - Fee Related DE3587619T2 (de) | 1984-03-21 | 1985-03-21 | Halbleiterlaser vom Typ VSIS mit Fensterbereich. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4686679A (de) |
EP (2) | EP0387920B1 (de) |
DE (2) | DE3587619T2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6218783A (ja) * | 1985-07-17 | 1987-01-27 | Sharp Corp | 半導体レ−ザ素子 |
US5087587A (en) * | 1986-02-13 | 1992-02-11 | Sharp Kabushiki Kaisha | Epitaxial growth process for the production of a window semiconductor laser |
US4764934A (en) * | 1987-07-27 | 1988-08-16 | Ortel Corporation | Superluminescent diode and single mode laser |
US4843611A (en) * | 1987-07-27 | 1989-06-27 | Ortel Corporation | Superluminescent diode and single mode laser |
JP3510305B2 (ja) * | 1994-02-22 | 2004-03-29 | 三菱電機株式会社 | 半導体レーザの製造方法,及び半導体レーザ |
JP2011124253A (ja) * | 2009-12-08 | 2011-06-23 | Sony Corp | 半導体レーザの製造方法、半導体レーザ、光ディスク装置、半導体装置の製造方法および半導体装置 |
TWI623337B (zh) * | 2015-12-24 | 2018-05-11 | 遠東科技大學 | 可攜式急難救助裝置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4416011A (en) * | 1981-07-06 | 1983-11-15 | Rca Corporation | Semiconductor light emitting device |
US4546481A (en) * | 1982-05-28 | 1985-10-08 | Sharp Kabushiki Kaisha | Window structure semiconductor laser |
DE3376936D1 (en) * | 1982-05-28 | 1988-07-07 | Sharp Kk | Semiconductor laser |
JPS5961982A (ja) * | 1982-09-30 | 1984-04-09 | Sony Corp | 半導体レ−ザ− |
US4594718A (en) * | 1983-02-01 | 1986-06-10 | Xerox Corporation | Combination index/gain guided semiconductor lasers |
-
1985
- 1985-03-20 US US06/713,832 patent/US4686679A/en not_active Expired - Fee Related
- 1985-03-21 DE DE90107944T patent/DE3587619T2/de not_active Expired - Fee Related
- 1985-03-21 EP EP90107944A patent/EP0387920B1/de not_active Expired - Lifetime
- 1985-03-21 EP EP85301977A patent/EP0155853B1/de not_active Expired
- 1985-03-21 DE DE8585301977T patent/DE3581224D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0155853A2 (de) | 1985-09-25 |
EP0387920A3 (en) | 1990-12-19 |
DE3587619T2 (de) | 1994-02-24 |
EP0387920A2 (de) | 1990-09-19 |
US4686679A (en) | 1987-08-11 |
DE3587619D1 (de) | 1993-11-11 |
EP0155853B1 (de) | 1991-01-09 |
EP0387920B1 (de) | 1993-10-06 |
EP0155853A3 (en) | 1986-12-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |