DE3581224D1 - Resonatornahe bereiche in einem halbleiterlaser vom typ vsis. - Google Patents

Resonatornahe bereiche in einem halbleiterlaser vom typ vsis.

Info

Publication number
DE3581224D1
DE3581224D1 DE8585301977T DE3581224T DE3581224D1 DE 3581224 D1 DE3581224 D1 DE 3581224D1 DE 8585301977 T DE8585301977 T DE 8585301977T DE 3581224 T DE3581224 T DE 3581224T DE 3581224 D1 DE3581224 D1 DE 3581224D1
Authority
DE
Germany
Prior art keywords
vsis
resonator
areas near
temperature laser
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585301977T
Other languages
English (en)
Inventor
Seiki Yano
Saburo Yamamoto
Hiroshi Hayashi
Taiji Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5504884A external-priority patent/JPS60198794A/ja
Priority claimed from JP5504984A external-priority patent/JPS60198795A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3581224D1 publication Critical patent/DE3581224D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE8585301977T 1984-03-21 1985-03-21 Resonatornahe bereiche in einem halbleiterlaser vom typ vsis. Expired - Lifetime DE3581224D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5504884A JPS60198794A (ja) 1984-03-21 1984-03-21 半導体レ−ザ素子
JP5504984A JPS60198795A (ja) 1984-03-21 1984-03-21 半導体レ−ザ素子

Publications (1)

Publication Number Publication Date
DE3581224D1 true DE3581224D1 (de) 1991-02-14

Family

ID=26395894

Family Applications (2)

Application Number Title Priority Date Filing Date
DE90107944T Expired - Fee Related DE3587619T2 (de) 1984-03-21 1985-03-21 Halbleiterlaser vom Typ VSIS mit Fensterbereich.
DE8585301977T Expired - Lifetime DE3581224D1 (de) 1984-03-21 1985-03-21 Resonatornahe bereiche in einem halbleiterlaser vom typ vsis.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE90107944T Expired - Fee Related DE3587619T2 (de) 1984-03-21 1985-03-21 Halbleiterlaser vom Typ VSIS mit Fensterbereich.

Country Status (3)

Country Link
US (1) US4686679A (de)
EP (2) EP0387920B1 (de)
DE (2) DE3587619T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218783A (ja) * 1985-07-17 1987-01-27 Sharp Corp 半導体レ−ザ素子
US5087587A (en) * 1986-02-13 1992-02-11 Sharp Kabushiki Kaisha Epitaxial growth process for the production of a window semiconductor laser
US4764934A (en) * 1987-07-27 1988-08-16 Ortel Corporation Superluminescent diode and single mode laser
US4843611A (en) * 1987-07-27 1989-06-27 Ortel Corporation Superluminescent diode and single mode laser
JP3510305B2 (ja) * 1994-02-22 2004-03-29 三菱電機株式会社 半導体レーザの製造方法，及び半導体レーザ
JP2011124253A (ja) * 2009-12-08 2011-06-23 Sony Corp 半導体レーザの製造方法、半導体レーザ、光ディスク装置、半導体装置の製造方法および半導体装置
TWI623337B (zh) * 2015-12-24 2018-05-11 遠東科技大學 可攜式急難救助裝置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4416011A (en) * 1981-07-06 1983-11-15 Rca Corporation Semiconductor light emitting device
US4546481A (en) * 1982-05-28 1985-10-08 Sharp Kabushiki Kaisha Window structure semiconductor laser
DE3376936D1 (en) * 1982-05-28 1988-07-07 Sharp Kk Semiconductor laser
JPS5961982A (ja) * 1982-09-30 1984-04-09 Sony Corp 半導体レ−ザ−
US4594718A (en) * 1983-02-01 1986-06-10 Xerox Corporation Combination index/gain guided semiconductor lasers

Also Published As

Publication number Publication date
EP0155853A2 (de) 1985-09-25
EP0387920A3 (en) 1990-12-19
DE3587619T2 (de) 1994-02-24
EP0387920A2 (de) 1990-09-19
US4686679A (en) 1987-08-11
DE3587619D1 (de) 1993-11-11
EP0155853B1 (de) 1991-01-09
EP0387920B1 (de) 1993-10-06
EP0155853A3 (en) 1986-12-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee