DE3540250A1 - Halbleiterschalter fuer hohe sperrspannungen - Google Patents
Halbleiterschalter fuer hohe sperrspannungenInfo
- Publication number
- DE3540250A1 DE3540250A1 DE19853540250 DE3540250A DE3540250A1 DE 3540250 A1 DE3540250 A1 DE 3540250A1 DE 19853540250 DE19853540250 DE 19853540250 DE 3540250 A DE3540250 A DE 3540250A DE 3540250 A1 DE3540250 A1 DE 3540250A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor switch
- semiconductor
- insulator
- switch according
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 230000000903 blocking effect Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000012212 insulator Substances 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- 239000007921 spray Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electronic Switches (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19853540250 DE3540250A1 (de) | 1985-11-13 | 1985-11-13 | Halbleiterschalter fuer hohe sperrspannungen |
| PCT/DE1986/000414 WO1987003141A1 (en) | 1985-11-13 | 1986-10-15 | Semiconductor switch for high inverse voltages |
| JP61505373A JPS63502787A (ja) | 1985-11-13 | 1986-10-15 | 高い遮断電圧用半導体スイツチ |
| KR870700597A KR880701022A (ko) | 1985-11-13 | 1987-07-09 | 반도체 스위치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19853540250 DE3540250A1 (de) | 1985-11-13 | 1985-11-13 | Halbleiterschalter fuer hohe sperrspannungen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3540250A1 true DE3540250A1 (de) | 1987-05-14 |
Family
ID=6285883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853540250 Withdrawn DE3540250A1 (de) | 1985-11-13 | 1985-11-13 | Halbleiterschalter fuer hohe sperrspannungen |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS63502787A (ko) |
| KR (1) | KR880701022A (ko) |
| DE (1) | DE3540250A1 (ko) |
| WO (1) | WO1987003141A1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6854329B2 (en) | 1996-01-31 | 2005-02-15 | Hunter Engineering Company | Wheel balancer with variation measurement |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3007119A (en) * | 1959-11-04 | 1961-10-31 | Westinghouse Electric Corp | Modulating circuit and field effect semiconductor structure for use therein |
| US3274462A (en) * | 1963-11-13 | 1966-09-20 | Jr Keats A Pullen | Structural configuration for fieldeffect and junction transistors |
| FR1485222A (fr) * | 1965-07-01 | 1967-06-16 | Siemens Ag | Dispositif à semi-conducteurs |
| DE2147071A1 (de) * | 1971-09-21 | 1973-03-29 | Mueser Horst Prof Dr Rer Nat | Elektronischer mikroschalter |
-
1985
- 1985-11-13 DE DE19853540250 patent/DE3540250A1/de not_active Withdrawn
-
1986
- 1986-10-15 WO PCT/DE1986/000414 patent/WO1987003141A1/de unknown
- 1986-10-15 JP JP61505373A patent/JPS63502787A/ja active Pending
-
1987
- 1987-07-09 KR KR870700597A patent/KR880701022A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1987003141A1 (en) | 1987-05-21 |
| JPS63502787A (ja) | 1988-10-13 |
| KR880701022A (ko) | 1988-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69408605T2 (de) | SOI-Transistor | |
| DE2903534A1 (de) | Feldeffekttransistor | |
| DE3714672C2 (ko) | ||
| DE10147666B4 (de) | Piezoelement und Verfahren zur Herstellung eines Piezoelements | |
| EP1063700B1 (de) | Substrat für Hochspannungsmodule | |
| DE2633324C2 (de) | Verfahren zum Herstellen von Halbleiterbauelementen hoher Sperrspannungsbelastbarkeit | |
| EP0028798B1 (de) | Thyristor mit Hilfsemitterelektrode und Verfahren zu seinem Betrieb | |
| DE3850641T2 (de) | Struktur zur Versiegelung eines elektrostriktiven Elements. | |
| EP0080740A2 (de) | Schaltungsanordnung zum Schalten von Leistungsstromkreisen unter Verwendung von Hochspannungs-MOS-Transistoren | |
| DE2747668A1 (de) | Thyristor-bauelement | |
| DE1514008B2 (de) | Flaechentransistor | |
| DE3540250A1 (de) | Halbleiterschalter fuer hohe sperrspannungen | |
| DE10252609A1 (de) | Abschluß für ein Halbleiterbauteil mit MOS-Gatesteuerung mit Schutzringen | |
| DE19736754A1 (de) | Überspannungsschutzelement | |
| DE3640801C2 (ko) | ||
| DE1905932A1 (de) | Kapazitives Potentiometer | |
| DE1514228C3 (de) | Feldeffekttransistor | |
| DE2654532C3 (de) | Scheibenförmige Halbleiterzelle | |
| DE2158270B2 (de) | Kontaktloser schalter mit einem feldeffekt-thyristor | |
| DE102004006002B3 (de) | Soi-Halbleiterbauelement mit erhöhter Spannungsfestigkeit | |
| DE3024296A1 (de) | Doppelgatter-metalloxid-feldeffekt- halbleiterelement | |
| EP0030273A2 (de) | Halbleiterbauelement mit einem Schutzring | |
| DE2719400A1 (de) | Scheibenfoermige halbleiterzelle | |
| DE2433803A1 (de) | Feldeffekttransistor mit isolierter steuerelektrode | |
| DE2154122A1 (de) | Halbleiteranordnung mit Hoch spannungspassivierung und Verfahren zu deren Herstellung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |