DE3470632D1 - High voltage mos/bipolar power transistor apparatus - Google Patents
High voltage mos/bipolar power transistor apparatusInfo
- Publication number
- DE3470632D1 DE3470632D1 DE8484400220T DE3470632T DE3470632D1 DE 3470632 D1 DE3470632 D1 DE 3470632D1 DE 8484400220 T DE8484400220 T DE 8484400220T DE 3470632 T DE3470632 T DE 3470632T DE 3470632 D1 DE3470632 D1 DE 3470632D1
- Authority
- DE
- Germany
- Prior art keywords
- high voltage
- power transistor
- voltage mos
- bipolar power
- transistor apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46343283A | 1983-02-03 | 1983-02-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3470632D1 true DE3470632D1 (en) | 1988-05-26 |
Family
ID=23840056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484400220T Expired DE3470632D1 (en) | 1983-02-03 | 1984-02-01 | High voltage mos/bipolar power transistor apparatus |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0118336B1 (de) |
JP (1) | JPS59181561A (de) |
CA (1) | CA1209718A (de) |
DE (1) | DE3470632D1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2164790A (en) * | 1984-09-19 | 1986-03-26 | Philips Electronic Associated | Merged bipolar and field effect transistors |
US5017992A (en) * | 1989-03-29 | 1991-05-21 | Asea Brown Boveri Ltd. | High blocking-capacity semiconductor component |
JP3156300B2 (ja) * | 1991-10-07 | 2001-04-16 | 株式会社デンソー | 縦型半導体装置 |
EP0763895B1 (de) * | 1995-09-14 | 2003-11-12 | Infineon Technologies AG | Schaltungsanordnung und Halbleiterkörper mit einem Leistungsschalter |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1805173A1 (de) * | 1968-10-25 | 1970-06-25 | Telefunken Patent | Haltleiterbauelement |
DE2363577A1 (de) * | 1973-12-20 | 1975-06-26 | Siemens Ag | Kombination aus einem bipolaren transistor und einem mos-feldeffekttransistor |
DE3175641D1 (en) * | 1980-08-25 | 1987-01-08 | Itt Ind Gmbh Deutsche | High-voltage semiconductor switch |
-
1984
- 1984-02-01 DE DE8484400220T patent/DE3470632D1/de not_active Expired
- 1984-02-01 EP EP19840400220 patent/EP0118336B1/de not_active Expired
- 1984-02-02 JP JP1618484A patent/JPS59181561A/ja active Pending
- 1984-02-02 CA CA000446657A patent/CA1209718A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS59181561A (ja) | 1984-10-16 |
EP0118336B1 (de) | 1988-04-20 |
EP0118336A1 (de) | 1984-09-12 |
CA1209718A (en) | 1986-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4585955B1 (en) | Internally regulated power voltage circuit for mis semiconductor integrated circuit | |
JPS57159126A (en) | Drive circuit for power field effect switching transistor | |
GB8406974D0 (en) | High power mosfet | |
IL75090A0 (en) | Transformerless drive circuit for field-effect transistors | |
EP0123487A3 (en) | High voltage insulators | |
IL72086A (en) | High voltage power supply | |
GB2113909B (en) | Power mos fet | |
EP0181002A3 (en) | Semiconductor device having high breakdown voltage | |
DE3468593D1 (en) | Power transistor | |
EP0176146A3 (en) | High voltage semiconductor devices | |
EP0193172A3 (en) | Vertical mos transistor with peripheral circuit | |
GB8531025D0 (en) | Bipolar transistor integrated circuit | |
GB8408549D0 (en) | Bipolar power transistor stuctures | |
GB2175441B (en) | Power bipolar transistor | |
DE3470632D1 (en) | High voltage mos/bipolar power transistor apparatus | |
GB2136221B (en) | High voltage power supply | |
GB2137826B (en) | High dc voltage generator | |
GB8512836D0 (en) | Bipolar power transistors | |
EP0112607A3 (en) | Power mos transistor | |
DE3277672D1 (en) | Drive circuit for power switching transistor | |
EP0180315A3 (en) | High breakdown voltage semiconductor device | |
GB8333555D0 (en) | Circuit for controlling power transistor | |
DE3471381D1 (en) | Power supply circuit for an ozone generator | |
GB8410307D0 (en) | High voltage generating circuit | |
JPS57197623A (en) | Low voltage power source |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8331 | Complete revocation |