DE3381190D1 - Ladungsuebertragungsvorrichtungen zur multiplexverarbeitung von signalen. - Google Patents
Ladungsuebertragungsvorrichtungen zur multiplexverarbeitung von signalen.Info
- Publication number
- DE3381190D1 DE3381190D1 DE8383901618T DE3381190T DE3381190D1 DE 3381190 D1 DE3381190 D1 DE 3381190D1 DE 8383901618 T DE8383901618 T DE 8383901618T DE 3381190 T DE3381190 T DE 3381190T DE 3381190 D1 DE3381190 D1 DE 3381190D1
- Authority
- DE
- Germany
- Prior art keywords
- signals
- charge transfer
- transfer devices
- multiplex processing
- multiplex
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14868—CCD or CID colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
- H04N25/447—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by preserving the colour pattern with or without loss of information
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57086258A JPS58202685A (ja) | 1982-05-21 | 1982-05-21 | 信号合成用電荷転送装置 |
PCT/JP1983/000150 WO1983004344A1 (en) | 1982-05-21 | 1983-05-19 | Charge transfer device for synthesizing signal |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3381190D1 true DE3381190D1 (de) | 1990-03-08 |
Family
ID=13881789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383901618T Expired - Lifetime DE3381190D1 (de) | 1982-05-21 | 1983-05-19 | Ladungsuebertragungsvorrichtungen zur multiplexverarbeitung von signalen. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4628347A (de) |
EP (1) | EP0109445B1 (de) |
JP (1) | JPS58202685A (de) |
DE (1) | DE3381190D1 (de) |
WO (1) | WO1983004344A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2949861B2 (ja) * | 1991-01-18 | 1999-09-20 | 日本電気株式会社 | Ccdリニアイメージセンサ |
JP2871185B2 (ja) * | 1991-06-17 | 1999-03-17 | ミノルタ株式会社 | 電荷結合装置 |
US5420534A (en) * | 1993-10-27 | 1995-05-30 | Loral Fairchild Corporation | Programmable NxM switching system with charge-coupled device multiplexer |
JP3482689B2 (ja) * | 1994-05-27 | 2003-12-22 | ソニー株式会社 | 固体撮像装置及びこれを用いたバーコード読取り装置 |
JP2005268411A (ja) * | 2004-03-17 | 2005-09-29 | Nec Electronics Corp | 電荷転送装置及びその駆動方法 |
JP2007173774A (ja) * | 2005-11-22 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JP4637033B2 (ja) * | 2006-02-23 | 2011-02-23 | 富士フイルム株式会社 | 出力2分岐型固体撮像素子及び撮像装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1020656A (en) * | 1973-03-22 | 1977-11-08 | Choong-Ki Kim | Buried-channel charge-coupled linear imaging device |
US3971003A (en) * | 1974-11-18 | 1976-07-20 | Rca Corporation | Charge coupled device imager |
JPS51105284A (de) * | 1975-02-28 | 1976-09-17 | Fujitsu Ltd | |
US4028671A (en) * | 1975-10-06 | 1977-06-07 | Motorola, Inc. | Charge coupled storage device multiplexer |
US4211937A (en) * | 1976-01-23 | 1980-07-08 | Tokyo Shibaura Electric Co., Ltd. | Multi-channel charge coupled transfer device |
JPS5321519A (en) * | 1976-08-12 | 1978-02-28 | Fujitsu Ltd | Spike noise elemination unit of solid image pickup unit |
JPS5334417A (en) * | 1976-09-10 | 1978-03-31 | Sony Corp | Solid state color pick up unit |
JPS603717B2 (ja) * | 1977-06-13 | 1985-01-30 | 日本電気株式会社 | 電荷転送装置 |
US4242700A (en) * | 1979-01-22 | 1980-12-30 | Rca Corporation | Line transfer CCD imagers |
JPS55163973A (en) * | 1979-06-08 | 1980-12-20 | Nec Corp | Color solid-state pickup unit |
US4287536A (en) * | 1979-10-12 | 1981-09-01 | Xerox Corporation | Gain control for scanning arrays |
JPS56116373A (en) * | 1980-02-18 | 1981-09-12 | Fujitsu Ltd | Signal charge detection circuit for line sensor |
JPS5854551B2 (ja) * | 1980-06-23 | 1983-12-05 | 日本電気株式会社 | カラ−固体撮像装置 |
DE3104456A1 (de) * | 1981-02-09 | 1982-08-26 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und anordnung zum herausfiltern des luminanzsignals aus einem fbas-fernsehsignal |
JPS58190169A (ja) * | 1982-04-30 | 1983-11-07 | Toshiba Corp | 固体撮像装置 |
US4551758A (en) * | 1982-06-09 | 1985-11-05 | Canon Kabushiki Kaisha | Image pick-up device and system |
JPS5984575A (ja) * | 1982-11-08 | 1984-05-16 | Hitachi Ltd | 固体撮像素子 |
US4513313A (en) * | 1982-12-07 | 1985-04-23 | Canon Kabushiki Kaisha | Solid state imaging device |
US4575763A (en) * | 1984-12-12 | 1986-03-11 | Rca Corporation | CCD with number of clocking signal phases increasing in later charge transfer stages |
-
1982
- 1982-05-21 JP JP57086258A patent/JPS58202685A/ja active Granted
-
1983
- 1983-05-19 EP EP83901618A patent/EP0109445B1/de not_active Expired - Lifetime
- 1983-05-19 DE DE8383901618T patent/DE3381190D1/de not_active Expired - Lifetime
- 1983-05-19 US US06/576,372 patent/US4628347A/en not_active Expired - Lifetime
- 1983-05-19 WO PCT/JP1983/000150 patent/WO1983004344A1/ja active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP0109445B1 (de) | 1990-01-31 |
JPH0474909B2 (de) | 1992-11-27 |
EP0109445A1 (de) | 1984-05-30 |
WO1983004344A1 (en) | 1983-12-08 |
JPS58202685A (ja) | 1983-11-25 |
EP0109445A4 (de) | 1986-01-07 |
US4628347A (en) | 1986-12-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |