DE3362768D1 - Photo deposition of metals onto substrates - Google Patents
Photo deposition of metals onto substratesInfo
- Publication number
- DE3362768D1 DE3362768D1 DE8383105173T DE3362768T DE3362768D1 DE 3362768 D1 DE3362768 D1 DE 3362768D1 DE 8383105173 T DE8383105173 T DE 8383105173T DE 3362768 T DE3362768 T DE 3362768T DE 3362768 D1 DE3362768 D1 DE 3362768D1
- Authority
- DE
- Germany
- Prior art keywords
- onto substrates
- metals onto
- photo deposition
- photo
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28581—Deposition of Schottky electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/393,998 US4451503A (en) | 1982-06-30 | 1982-06-30 | Photo deposition of metals with far UV radiation |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3362768D1 true DE3362768D1 (en) | 1986-05-07 |
Family
ID=23557111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383105173T Expired DE3362768D1 (en) | 1982-06-30 | 1983-05-25 | Photo deposition of metals onto substrates |
Country Status (4)
Country | Link |
---|---|
US (1) | US4451503A (de) |
EP (1) | EP0097819B1 (de) |
JP (1) | JPS599164A (de) |
DE (1) | DE3362768D1 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3300449A1 (de) * | 1983-01-08 | 1984-07-12 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur herstellung einer elektrode fuer eine hochdruckgasentladungslampe |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
JPS60211076A (ja) * | 1984-04-05 | 1985-10-23 | Fuji Electric Corp Res & Dev Ltd | 多層導電膜パタ−ンの形成方法 |
US4543270A (en) * | 1984-06-20 | 1985-09-24 | Gould Inc. | Method for depositing a micron-size metallic film on a transparent substrate utilizing a visible laser |
JPH0630339B2 (ja) * | 1984-07-16 | 1994-04-20 | 新技術事業団 | GaAs単結晶の製造方法 |
DE3584798D1 (de) * | 1984-07-17 | 1992-01-16 | Nec Corp | Anreizverfahren und vorrichtung fuer photochemische reaktionen. |
GB2162207B (en) * | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
JPH0766906B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | GaAsエピタキシャル成長方法 |
JPS6193830A (ja) * | 1984-10-15 | 1986-05-12 | Nec Corp | 光気相成長法 |
US4574095A (en) | 1984-11-19 | 1986-03-04 | International Business Machines Corporation | Selective deposition of copper |
US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
JPH0752718B2 (ja) * | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
JPS6245035A (ja) * | 1985-08-23 | 1987-02-27 | Hitachi Ltd | 半導体装置の製造装置 |
JPH0772353B2 (ja) * | 1985-08-23 | 1995-08-02 | 日本電信電話株式会社 | 薄膜堆積方法および装置 |
US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US4748045A (en) * | 1986-04-09 | 1988-05-31 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
US4701347A (en) * | 1986-04-18 | 1987-10-20 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for growing patterned metal layers |
JPS62281349A (ja) * | 1986-05-29 | 1987-12-07 | Seiko Instr & Electronics Ltd | 金属パタ−ン膜の形成方法及びその装置 |
US5427824A (en) * | 1986-09-09 | 1995-06-27 | Semiconductor Energy Laboratory Co., Ltd. | CVD apparatus |
KR910003742B1 (ko) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
US4814294A (en) * | 1987-07-30 | 1989-03-21 | Allied-Signal Inc. | Method of growing cobalt silicide films by chemical vapor deposition |
DE68919328T2 (de) * | 1988-10-28 | 1995-05-24 | Ibm | Ultraviolette Laserablation und Ätzen von organischen Feststoffen. |
GB2250751B (en) * | 1990-08-24 | 1995-04-12 | Kawasaki Heavy Ind Ltd | Process for the production of dielectric thin films |
ATE146304T1 (de) * | 1993-07-30 | 1996-12-15 | Ibm | Vorrichtung und verfahren um feine metal-linie auf einem substrat abzulegen |
US6159641A (en) * | 1993-12-16 | 2000-12-12 | International Business Machines Corporation | Method for the repair of defects in lithographic masks |
US5789312A (en) * | 1996-10-30 | 1998-08-04 | International Business Machines Corporation | Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics |
US6452276B1 (en) | 1998-04-30 | 2002-09-17 | International Business Machines Corporation | Ultra thin, single phase, diffusion barrier for metal conductors |
US6248658B1 (en) | 1999-01-13 | 2001-06-19 | Advanced Micro Devices, Inc. | Method of forming submicron-dimensioned metal patterns |
CN1320990C (zh) * | 1999-12-23 | 2007-06-13 | 摩必斯技术公司 | 聚合物泡沫材料加工 |
US6656539B1 (en) * | 2000-11-13 | 2003-12-02 | International Business Machines Corporation | Method and apparatus for performing laser CVD |
MY145695A (en) * | 2001-01-24 | 2012-03-30 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
JP2002294456A (ja) * | 2001-03-30 | 2002-10-09 | Oki Electric Ind Co Ltd | 膜の形成方法及びその方法を実施するためのcvd装置 |
US20230279544A1 (en) | 2020-09-03 | 2023-09-07 | Tcm Research Ltd. | Additive chemical vapor deposition methods and systems |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3253946A (en) * | 1960-08-11 | 1966-05-31 | Ethyl Corp | Vapor plating with manganese, chromium, molybdenum or tungsten employing cyclopentadienyl metal carbonyl |
US3364087A (en) * | 1964-04-27 | 1968-01-16 | Varian Associates | Method of using laser to coat or etch substrate |
US3808035A (en) * | 1970-12-09 | 1974-04-30 | M Stelter | Deposition of single or multiple layers on substrates from dilute gas sweep to produce optical components, electro-optical components, and the like |
US4324854A (en) * | 1980-03-03 | 1982-04-13 | California Institute Of Technology | Deposition of metal films and clusters by reactions of compounds with low energy electrons on surfaces |
US4340617A (en) * | 1980-05-19 | 1982-07-20 | Massachusetts Institute Of Technology | Method and apparatus for depositing a material on a surface |
JPS6021224B2 (ja) * | 1980-10-08 | 1985-05-25 | 日本電気株式会社 | レーザー薄膜形成装置 |
US4330570A (en) * | 1981-04-24 | 1982-05-18 | The United States Of America As Represented By The Secretary Of The Navy | Selective photoinduced condensation technique for producing semiconducting compounds |
-
1982
- 1982-06-30 US US06/393,998 patent/US4451503A/en not_active Expired - Lifetime
-
1983
- 1983-04-14 JP JP58064649A patent/JPS599164A/ja active Pending
- 1983-05-25 DE DE8383105173T patent/DE3362768D1/de not_active Expired
- 1983-05-25 EP EP83105173A patent/EP0097819B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS599164A (ja) | 1984-01-18 |
EP0097819B1 (de) | 1986-04-02 |
US4451503A (en) | 1984-05-29 |
EP0097819A1 (de) | 1984-01-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |