DE3061748D1 - A programming circuit for a programmable read only memory - Google Patents
A programming circuit for a programmable read only memoryInfo
- Publication number
- DE3061748D1 DE3061748D1 DE8080301318T DE3061748T DE3061748D1 DE 3061748 D1 DE3061748 D1 DE 3061748D1 DE 8080301318 T DE8080301318 T DE 8080301318T DE 3061748 T DE3061748 T DE 3061748T DE 3061748 D1 DE3061748 D1 DE 3061748D1
- Authority
- DE
- Germany
- Prior art keywords
- memory
- programmable read
- programming circuit
- programming
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54051242A JPS5828679B2 (ja) | 1979-04-25 | 1979-04-25 | 半導体記憶装置の書込み回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3061748D1 true DE3061748D1 (en) | 1983-03-03 |
Family
ID=12881470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080301318T Expired DE3061748D1 (en) | 1979-04-25 | 1980-04-23 | A programming circuit for a programmable read only memory |
Country Status (4)
Country | Link |
---|---|
US (1) | US4319341A (de) |
EP (1) | EP0018774B1 (de) |
JP (1) | JPS5828679B2 (de) |
DE (1) | DE3061748D1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5828680B2 (ja) * | 1979-04-27 | 1983-06-17 | 富士通株式会社 | 半導体記憶装置 |
US4385368A (en) * | 1980-11-24 | 1983-05-24 | Raytheon Company | Programmable read only memory |
US4432070A (en) * | 1981-09-30 | 1984-02-14 | Monolithic Memories, Incorporated | High speed PROM device |
US4480318A (en) * | 1982-02-18 | 1984-10-30 | Fairchild Camera & Instrument Corp. | Method of programming of junction-programmable read-only memories |
JPS592291A (ja) * | 1982-06-28 | 1984-01-07 | Fujitsu Ltd | プログラマブル・リ−ドオンリ・メモリ装置 |
JPS5922295A (ja) * | 1982-06-30 | 1984-02-04 | Fujitsu Ltd | 半導体記憶装置 |
JPS59152594A (ja) * | 1983-02-21 | 1984-08-31 | Hitachi Ltd | 半導体記憶装置 |
US4702466A (en) * | 1983-04-20 | 1987-10-27 | Dubois R Clark | Sheet material feeder for copiers and other sheet processing apparatus |
JPS6070597A (ja) * | 1983-09-28 | 1985-04-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
US4609998A (en) * | 1983-12-15 | 1986-09-02 | Monolithic Memories, Inc. | High conductance circuit for programmable integrated circuit |
JPS6240698A (ja) * | 1985-08-16 | 1987-02-21 | Fujitsu Ltd | 半導体記憶装置 |
US4734885A (en) * | 1985-10-17 | 1988-03-29 | Harris Corporation | Programming arrangement for programmable devices |
US4722822A (en) * | 1985-11-27 | 1988-02-02 | Advanced Micro Devices, Inc. | Column-current multiplexing driver circuit for high density proms |
JPS62157400A (ja) * | 1985-12-27 | 1987-07-13 | Fujitsu Ltd | 半導体記憶回路 |
JPS62214597A (ja) * | 1986-03-17 | 1987-09-21 | Fujitsu Ltd | 不揮発性メモリ回路 |
JPH01146198A (ja) * | 1987-12-02 | 1989-06-08 | Fujitsu Ltd | プログラマブル・リード・オンリ・メモリ装置 |
US5003507A (en) * | 1988-09-06 | 1991-03-26 | Simon Johnson | EPROM emulator for selectively simulating a variety of different paging EPROMs in a test circuit |
KR920006985A (ko) * | 1990-09-19 | 1992-04-28 | 김광호 | 스테이틱램의 부하 조절회로 |
JP3210355B2 (ja) * | 1991-03-04 | 2001-09-17 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR102579661B1 (ko) | 2017-04-05 | 2023-09-18 | 닛산 가가쿠 가부시키가이샤 | 전하 수송성 바니시 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3611319A (en) * | 1969-03-06 | 1971-10-05 | Teledyne Inc | Electrically alterable read only memory |
US4014008A (en) * | 1975-02-07 | 1977-03-22 | Siemens Aktiengesellschaft | Circuit arrangement for interference-free storage of information in a programmable read-only memory |
US4101974A (en) * | 1975-12-31 | 1978-07-18 | Motorola, Inc. | Personalizable read-only memory |
US4130889A (en) * | 1977-05-02 | 1978-12-19 | Monolithic Memories, Inc. | Programmable write-once, read-only semiconductor memory array using SCR current sink and current source devices |
-
1979
- 1979-04-25 JP JP54051242A patent/JPS5828679B2/ja not_active Expired
-
1980
- 1980-04-21 US US06/141,933 patent/US4319341A/en not_active Expired - Lifetime
- 1980-04-23 EP EP80301318A patent/EP0018774B1/de not_active Expired
- 1980-04-23 DE DE8080301318T patent/DE3061748D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS55142489A (en) | 1980-11-07 |
JPS5828679B2 (ja) | 1983-06-17 |
US4319341A (en) | 1982-03-09 |
EP0018774B1 (de) | 1983-01-26 |
EP0018774A1 (de) | 1980-11-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |