DE3061748D1 - A programming circuit for a programmable read only memory - Google Patents

A programming circuit for a programmable read only memory

Info

Publication number: DE3061748D1
Authority: DE; Germany
Prior art keywords: memory; programmable read; programming circuit; programming; circuit
Prior art date: 1979-04-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

DE8080301318T

Other languages

English (en)

Inventor

Toshitaka Fukushima

Kazumi Koyama

Kouji Ueno

Tamio Miyamura

Yuichi Kawabata

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-04-25

Filing date

1980-04-23

Publication date

1983-03-03

1980-04-23 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1983-03-03 Application granted granted Critical

1983-03-03 Publication of DE3061748D1 publication Critical patent/DE3061748D1/de

Status Expired legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements

DE8080301318T 1979-04-25 1980-04-23 A programming circuit for a programmable read only memory Expired DE3061748D1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP54051242A JPS5828679B2 (ja)	1979-04-25	1979-04-25	半導体記憶装置の書込み回路

Publications (1)

Publication Number	Publication Date
DE3061748D1 true DE3061748D1 (en)	1983-03-03

Family

ID=12881470

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8080301318T Expired DE3061748D1 (en)	1979-04-25	1980-04-23	A programming circuit for a programmable read only memory

Country Status (4)

Country	Link
US (1)	US4319341A (de)
EP (1)	EP0018774B1 (de)
JP (1)	JPS5828679B2 (de)
DE (1)	DE3061748D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5828680B2 (ja) *	1979-04-27	1983-06-17	富士通株式会社	半導体記憶装置
US4385368A (en) *	1980-11-24	1983-05-24	Raytheon Company	Programmable read only memory
US4432070A (en) *	1981-09-30	1984-02-14	Monolithic Memories, Incorporated	High speed PROM device
US4480318A (en) *	1982-02-18	1984-10-30	Fairchild Camera & Instrument Corp.	Method of programming of junction-programmable read-only memories
JPS592291A (ja) *	1982-06-28	1984-01-07	Fujitsu Ltd	プログラマブル・リ−ドオンリ・メモリ装置
JPS5922295A (ja) *	1982-06-30	1984-02-04	Fujitsu Ltd	半導体記憶装置
JPS59152594A (ja) *	1983-02-21	1984-08-31	Hitachi Ltd	半導体記憶装置
US4702466A (en) *	1983-04-20	1987-10-27	Dubois R Clark	Sheet material feeder for copiers and other sheet processing apparatus
JPS6070597A (ja) *	1983-09-28	1985-04-22	Toshiba Corp	不揮発性半導体記憶装置
US4609998A (en) *	1983-12-15	1986-09-02	Monolithic Memories, Inc.	High conductance circuit for programmable integrated circuit
JPS6240698A (ja) *	1985-08-16	1987-02-21	Fujitsu Ltd	半導体記憶装置
US4734885A (en) *	1985-10-17	1988-03-29	Harris Corporation	Programming arrangement for programmable devices
US4722822A (en) *	1985-11-27	1988-02-02	Advanced Micro Devices, Inc.	Column-current multiplexing driver circuit for high density proms
JPS62157400A (ja) *	1985-12-27	1987-07-13	Fujitsu Ltd	半導体記憶回路
JPS62214597A (ja) *	1986-03-17	1987-09-21	Fujitsu Ltd	不揮発性メモリ回路
JPH01146198A (ja) *	1987-12-02	1989-06-08	Fujitsu Ltd	プログラマブル・リード・オンリ・メモリ装置
US5003507A (en) *	1988-09-06	1991-03-26	Simon Johnson	EPROM emulator for selectively simulating a variety of different paging EPROMs in a test circuit
KR920006985A (ko) *	1990-09-19	1992-04-28	김광호	스테이틱램의 부하 조절회로
JP3210355B2 (ja) *	1991-03-04	2001-09-17	株式会社東芝	不揮発性半導体記憶装置
KR102579661B1 (ko)	2017-04-05	2023-09-18	닛산 가가쿠 가부시키가이샤	전하 수송성 바니시

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3611319A (en) *	1969-03-06	1971-10-05	Teledyne Inc	Electrically alterable read only memory
US4014008A (en) *	1975-02-07	1977-03-22	Siemens Aktiengesellschaft	Circuit arrangement for interference-free storage of information in a programmable read-only memory
US4101974A (en) *	1975-12-31	1978-07-18	Motorola, Inc.	Personalizable read-only memory
US4130889A (en) *	1977-05-02	1978-12-19	Monolithic Memories, Inc.	Programmable write-once, read-only semiconductor memory array using SCR current sink and current source devices

1979
- 1979-04-25 JP JP54051242A patent/JPS5828679B2/ja not_active Expired
1980
- 1980-04-21 US US06/141,933 patent/US4319341A/en not_active Expired - Lifetime
- 1980-04-23 EP EP80301318A patent/EP0018774B1/de not_active Expired
- 1980-04-23 DE DE8080301318T patent/DE3061748D1/de not_active Expired

Also Published As

Publication number	Publication date
JPS55142489A (en)	1980-11-07
JPS5828679B2 (ja)	1983-06-17
US4319341A (en)	1982-03-09
EP0018774B1 (de)	1983-01-26
EP0018774A1 (de)	1980-11-12

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Legal Events

Date	Code	Title	Description
1996-04-11	8339	Ceased/non-payment of the annual fee