DE2830522A1 - Silicon strip foil or sheet for solar cells - made by pouring molten stream of silicon onto rotating plate or wheel so continuous cast prod. is obtd. - Google Patents
Silicon strip foil or sheet for solar cells - made by pouring molten stream of silicon onto rotating plate or wheel so continuous cast prod. is obtd.Info
- Publication number
- DE2830522A1 DE2830522A1 DE19782830522 DE2830522A DE2830522A1 DE 2830522 A1 DE2830522 A1 DE 2830522A1 DE 19782830522 DE19782830522 DE 19782830522 DE 2830522 A DE2830522 A DE 2830522A DE 2830522 A1 DE2830522 A1 DE 2830522A1
- Authority
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- Germany
- Prior art keywords
- silicon
- plate
- roller
- liquid
- disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 89
- 239000010703 silicon Substances 0.000 title claims abstract description 89
- 239000011888 foil Substances 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 94
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
- B22D11/06—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars
- B22D11/0611—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars formed by a single casting wheel, e.g. for casting amorphous metal strips or wires
- B22D11/0617—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars formed by a single casting wheel, e.g. for casting amorphous metal strips or wires the casting wheel having its axis vertical and a casting strip formed in a peripheral groove of the wheel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
- B22D11/06—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars
- B22D11/0634—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars formed by a casting wheel and a co-operating shoe
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/008—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method using centrifugal force to the charge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Verfahren und Vorrichtung zur Herstellung von Method and device for the production of
Folien, Bändern oder Platten aus Silizium Für eine großtechnischeumwandlung von Sonnenenergie mit Hilfe von Solarzellen benötigt man aus wirtschaftlichen Gründen möglichst billige Solarzellen. Durch eine Entfeinerung des einkristallinen Silizium-Materials für Halbleiterbauelemente in Bezug auf Reinheit und Kristallperfektion kann man ein wesentlich billigeres Silizium herstellen, welches bei der Verwendung für die Herstellung von Solarzellen immer noch Wirkungsgrade über 10 % erreichen läßt. Selbst mit grobkristallinem Silizium können heute bereits Solarzellen mit Wirkungsgraden über 10 % hergestellt werden. Foils, tapes or plates made of silicon for a large-scale conversion solar energy with the help of solar cells is needed for economic reasons the cheapest possible solar cells. By refining the monocrystalline silicon material for semiconductor components in terms of purity and crystal perfection one can produce a much cheaper silicon, which when used for the Production of solar cells can still achieve efficiencies over 10%. Self With coarse crystalline silicon, solar cells can already be used today with high levels of efficiency over 10% are produced.
Ein wichtiger Kostenfaktor bei der Herstellung des Siliziums für Solarzellen liegt in der geometrischen Form des zu verwendenden Siliziums. Die Strukturen für die Solarzellen müssen möglichst großflächig auf Silizium-Platten, Silizium-Bändern oder Silizium-Folien aufgebracht werden. Das notwendige scheibenförmige Silizium-Grundmaterial-wird daher im allgemeinen durch einen Sägeprozeß aus Stäben oder Barren erzeugt. Dieser Prozeß ist aufwendig, weil er mit Hilfe gekühlter Diamantsägen erfolgen muß, und weil er einen erheblichen Verschnitt, d. h. Verlust von Silizium-Material zur Folge hat.An important cost factor in the production of silicon for solar cells lies in the geometric shape of the silicon to be used. The structures for The solar cells must be as large as possible on silicon plates, silicon strips or silicon foils are applied. The necessary disk-shaped silicon base material will be therefore generally produced from bars or billets by a sawing process. This The process is expensive because it has to be done with the aid of cooled diamond saws, and because he has a considerable waste, i. H. Result in loss of silicon material Has.
Um diesen Prozeß zu vermeiden, wurde ein Verfahren~ entwickelt, bei dem aus der Silizium-Schmelze durch Ausnutzung der Kapillarwirkung von Düsen Silizium-Bänder gezogen werden. Es ist jedoch sehr schwierig, nach- diesem Verfahren mit.hinreichender Geschwindigkeit ein für Solarzellen brauchbares Siliziumbandherzustellen.To avoid this process, a method was developed at from the silicon melt by utilizing the capillary action of nozzles silicon ribbons to be pulled. However, it is very difficult after this procedure with sufficient Speed to produce a silicon tape usable for solar cells.
Die vorliegende Erfindung hat sich zur Aufgabe gestellt, ein Verfahren und eine zur Durchführung des Verfahrens geeignete Vorrichtung anzugeben, mit welchem Folien, Bänder und Platten aus Silizium billig und schnell hergestellt werden können. Dieses Verfahren besteht darin, daB in einer Schutzgasatmosphäre oder im Vakuum flüssiges S#ilizium in einem gleichmäßigen Strahl auf eine rotierende Unterlage aufgebracht wird, so daß es in Form einer Folie, eines Bandes oder einer Platte aus Silizium in tangentialer Richtung von der rotierenden Unterlage geschleudert wird.The present invention has set itself the task of a method and to specify a device suitable for carrying out the method, with which Foils, tapes and plates made of silicon can be manufactured cheaply and quickly. This method consists in the fact that in a protective gas atmosphere or in a vacuum liquid silicon in an even jet on a rotating base is applied so that it is in the form of a film, tape or plate made of silicon thrown in a tangential direction from the rotating base will.
Die Merkmale der zur Durchführung des Verfahrens geeigneten Vorrichtungen ergeben sich aus den Ansprüchen 11 bis 18. Das neue Verfahren dient vorzugsweise zur Herstellung des Grundmaterials für Silizium-Solarzellen.The characteristics of the devices suitable for performing the method emerge from claims 11 to 18. The new method is preferably used for the production of the basic material for silicon solar cells.
Die Gleichmäßigkeit des Strahles aus flüssigem Silizium wird mit Hilfe einer geeignet geformten Austrittsdüse für das flüssige Silizium erzeugt. Die Dicke des weggeschleuderten Siliziums hängt von der Rotationsgeschwindigkeit der Unterlage und der Menge des flüssigen Siliziums ab, die in der Zeiteinheit auf die Unterlage aufgebracht wird. Die Länge der Folie, des Bandes oder der Platte kann durch mechanisches Zertrennen oder-durch die zeitliche Begrenzung des Strahles aus flüssigem Silizium auf die Unterlage geregelt werden.The uniformity of the jet of liquid silicon is made using a suitably shaped outlet nozzle for the liquid silicon generated. The fat of the thrown away silicon depends on the speed of rotation of the base and the amount of liquid silicon that was deposited on the substrate in the unit of time is applied. The length of the film, the tape or the plate can be determined by mechanical Separating or by limiting the time of the jet of liquid silicon to be regulated on the document.
Wenn die rotierende Unterlage mit Gas, Wasser oder mit flüssigem Stickstoff gekühlt wird, so daß ihre Temperatur kleiner als 500 0C bleibt, hat das weggeschleuderte Silizium eine amorphe oder feinkristalline Struktur. Als Material für die rotierende Unterlage, welche mit dem Silizium in Kontakt kommt, lassen sich in diesem Fall Isolatoren wie z. B. SiO2, BeO, Al203, MgO u. a. oder aber auch Metalle wie z. B. Wolfram, Moybdän und Metallverbindungen wie z. B.. Metall-Carbide, -Boride, -Silizide u. a. verwenden.If the rotating base is with gas, water or with liquid nitrogen is cooled, so that its temperature remains below 500 ° C, has thrown away Silicon has an amorphous or finely crystalline structure. As a material for the rotating In this case, supports that come into contact with the silicon can be removed Isolators such as B. SiO2, BeO, Al203, MgO and others. or metals such as. B. Tungsten, Moybdän and metal compounds such as. B. Metal carbides, borides, silicides i.a. use.
Es läßt sich jedoch erfindungsgemäß auch einkristallines Silizium als Unterlage verwenden. Bei einem größeren Radius der rotierenden Unterlage lassen sich dann im wesentlichen fugenlos zusammenhängende einkristalline Zonen durch verschachteltes Zusammensetzen aus geometrisch geformten einkristallinen Stücken herstellen.However, according to the invention, monocrystalline silicon can also be used use as a base. If there is a larger radius, leave the rotating base then in essentially seamlessly connected monocrystalline Zones through nested assembly of geometrically shaped monocrystalline Making pieces.
Wichtig-ist dabei, daß der Bereich der rotierenden Unterlage, der mit dem flüssigen Silizium in Kontakt kommt, aus zusammenhängendem einkristallinem Silizium besteht.It is important that the area of the rotating base that comes into contact with the liquid silicon, made of coherent monocrystalline Silicon is made of.
Wenn die Temperatur der rotierenden einkristallinen Silizium-Unterlage und die Temperatur des flüssigen Siliziums so groß sind, daß sich bei der Berührung mit dem flüssigen Silizium eine sehr dünne Schicht der einkristallinen Silizium-Unterlage bis zu ihrem Schmelzpunkt erhitzt; dann wird die tangential fortgeschleuderte Silizium-Folie,.das Silizium-Band oder die Silizium-Platte grobkristallin oder sogar einkristallin.When the temperature of the rotating single crystal silicon substrate and the temperature of the liquid silicon are so great that when touched with the liquid silicon a very thin layer of the monocrystalline silicon substrate heated to its melting point; then the tangentially thrown silicon foil, .that Silicon tape or silicon plate, coarsely crystalline or even monocrystalline.
Besteht die einkristalline Silizium-Unterlage aus dotiertem Silizium mit einem zum flüssigen Silizium entgegengesetzten Leitfähigkeitstyp, dann lassen sich bei entsprechend hohen Temperaturen.von Silizium-Unterlage und flüssigem Silizium als Folge einer Materialabtragung von der Unterlage und als Folge von Diffusion Silizium-Folien, Silizium-Bänder und Silizium-Platten herstellen, die auf einer Seite bereits einen pn-Überqang haben.The monocrystalline silicon substrate consists of doped silicon with a conductivity type opposite to that of liquid silicon, then leave at correspondingly high temperatures. of silicon substrate and liquid silicon as a result of material removal from the substrate and as a result of diffusion Manufacture silicon foils, silicon tapes and silicon plates on a Side already have a pn transition.
Da bei dem Verfahren der Erfindung sowohl die mechanische Bearbeitung zur Herstellung von Platten, Bändern oder Folien entfällt und zumindest bei einer Ausführungsform auch ein nachfolgender Diffusionsprozeß zur Herstellung eines pn-Überganges eingespart werden kann, eignet es sich besonders gut zur Herstellung von Silizium für Solarzellen.Since in the method of the invention both the mechanical processing for the production of plates, tapes or foils is not necessary and at least for one Embodiment also a subsequent diffusion process for the production of a pn junction can be saved, it is particularly suitable for the production of silicon for solar cells.
Ausführungsbeispiele Im folgenden werden zwei Ausführungsbeispiele für die Herstellung von Folien, Bändern oder Platten aus Silizium beschrieben.EXEMPLARY EMBODIMENTS The following are two exemplary embodiments for the production of foils, tapes or plates made of silicon.
Figur 1 zeigt schematisch das Verfahren und die zugehörige Vorrichtung aus einer gekühlten und um eine vertikale Achse rotierenden Unterlage zur Herstellung von amorphen oder feinkristallinen Folien, Bändern und Platten aus Silizium.Figure 1 shows schematically the method and the associated device from a cooled base rotating around a vertical axis for production of amorphous or finely crystalline foils, strips and plates made of silicon.
Figur 1a zeigt, die Draufsicht auf die Vorrichtung, während in der Figur ib die zugehörige Seitenansicht dargestellt ist.Figure 1a shows the top view of the device, while in the Figure ib the associated side view is shown.
Figur 2 zeigt im Querschnitt eine Vorrichtung mit einer beheizten und um eine horizontale Achse rotierende Unterlage zur Herstellung von grobkristallinen und einkristallinen Folien, Bändern und Platten aus Silizium.FIG. 2 shows in cross section a device with a heated one and a base rotating around a horizontal axis for the production of coarsely crystalline and monocrystalline films, tapes and plates made of silicon.
Ausführungsbeispiel 1 In Figur 1a und 1b ist 1 beispielsweise eine wassergekühlte Kupfer-Scheibe mit einem Durchmesser von ca.Embodiment 1 In Figures 1a and 1b, for example, 1 is one water-cooled copper disc with a diameter of approx.
einem Meter und einer Dicke von eta 10 cm, die um eine vertikale Achse mit einer Umdrehung pro Sekunde rotiert.one meter and a thickness of about 10 cm around a vertical axis rotates at one revolution per second.
Das nicht dargestellte Kühlsystem soll dafür sorgen, daß die Temperatur der Kupfer scheibe unter 500 0C bleibt; zu Beginn des Herstellungsverfahrens befindet sich die Scheibe bei einer Kühlung mit Wasser beispielsweise auf Raustemperatur. Über der Scheibe ist in der Nähe des Randes der horizontal verlaufenden Scheibenoberfläche ein Ofen (3) für das flüssige Silizium angeordnet, der beispielsweise aus Quarz oder pyrolythischem Graphit besteht und unmittelbar über der Scheibenoberfläche eine Austrittsöffnung (4) in Form einer Düse aufweist. Die Austrittsöffnung hat vorzugsweise die Form eines schmalen Schlitzes. Das im Ofen angeordnet flüssige Silizium mit einer Bor-Konzenträtion von beispielsweise 1 ; 1018/cm3 hat eine Temperatur von ca 1500 0C und wird nun unter Druck als gleichmäßig dicker, bandförmiger Strahl auf die rotierende und gekühlte K-upferscheib#-(1) aufgespritzt. Die zugeführte Materialmenge und die Rotationsgeschwindigkeit der Scheibe werden so aufeinander abgestimmt, daß die erzeugten Siliziumfolien, -bänder oder -pla'#tten eine Stärke von etwa 200 cm aufweisen.The cooling system, not shown, should ensure that the temperature the copper disc remains below 500 ° C; at the beginning of the manufacturing process the pane is, for example, at a room temperature when it is cooled with water. Above the disk is near the edge of the horizontally extending disk surface a furnace (3) is arranged for the liquid silicon, for example made of quartz or pyrolytic graphite and immediately above the disk surface has an outlet opening (4) in the form of a nozzle. The outlet has preferably in the form of a narrow slit. The liquid placed in the oven Silicon with a boron concentration of, for example, 1; 1018 / cm3 has a temperature of about 1500 0C and is now under pressure as a uniformly thick, ribbon-shaped jet sprayed onto the rotating and cooled K-copper disk # - (1). The supplied The amount of material and the speed of rotation of the disk are thus superimposed matched that the silicon foils, strips or plates produced have a thickness of about 200 cm.
Das flüssige Silizium wird beim Auftreffen auf die Kupferscheibe (1) abgekühlt und in erstarrter Form tangential als Folie, Platte oder Band (5) abgeschleudert. Eine geeignete, nicht dargestellte Auffangvorrichtung nimmt das dünnschichtige, amorphe oder feinkristalline Siliziummaterial auf, das nun noch, um fertige Solarzellen zu erhalten, in bekannter Weise mit einem großflächigen pn-Übergang und entsprechenden Anschlußkontakten versehen werden muß.When it hits the copper disc (1), the liquid silicon cooled and thrown off tangentially in solidified form as a film, plate or tape (5). A suitable collecting device, not shown, takes the thin-layer, amorphous or finely crystalline silicon material, which now needs to be used to make finished solar cells to be obtained in a known manner with a large-area pn junction and corresponding Connection contacts must be provided.
Die Vorrichtung nach den Figuren 1a und 1b ist vorzugsweise im Hochvakuum (8)' angeordnet Eine geschlossene und evakuierte Kammer (11) umgibt daher die Gesamtanordnung.The device according to FIGS. 1a and 1b is preferably in a high vacuum (8) 'arranged A closed and evacuated chamber (11) therefore surrounds the overall arrangement.
Ausführungsbeispiel 2 Nach Figur 2 ist eine um eine horizontale Achse rotierende Walze (10) mit einem Durchmesser von ca. 50 cm und einer Breite von ca. 20 cm aus Molybdän, Quarz oder pyrolythischem Graphit vorgesehen. Die Mantelfläche dieser Walze ist mit einer etwa 20 Millimeter dicken Auflagefläche aus einkristallinem Silizium (2) belegt, so daß der Gesamtdurchmesser der rotierenden Walz.e.(10, 2) 54 cm beträgt. Das einkristalline und beispielsweise n -leitende Auflagematerial mit einer Phosphor-Dotierung > io20 /cm3 wird aus gezogenem Silizium gewonnen und segmentförmig so auf der Walzenunterlage befestigt, daß eine weitestgehende geschlossene Oberfläche aus Silizium entsteht. Dieses relativ dicke Auflagematerial kann bis zum endgültigen Verbrauch bei der Herstellung von Folien, Bändern oder Platten immer wieder verwendet werden. Die rotierende Walze (10, 2) befindet sich in dem Ofen (6) auf einer Temperatur von ca. 1300 OC. Der -Ofen (6) umschließt die rotierende Walze (10, 2) bis auf einen kleinen Teil ihrer oben liegenden Mantelfläche.Embodiment 2 According to Figure 2 is a about a horizontal axis rotating roller (10) with a diameter of approx. 50 cm and a width of approx. 20 cm made of molybdenum, quartz or pyrolytic graphite are provided. The outer surface this roller is made of monocrystalline with an approximately 20 millimeter thick contact surface Silicon (2) occupied, so that the total diameter of the rotating roller e.g (10, 2) 54 cm. The monocrystalline and, for example, n -conductive coating material with a phosphorus doping> 1020 / cm3 is obtained from drawn silicon and segmented so attached to the roller base that a Largely closed surface made of silicon is created. This relatively thick Overlay material can be used up to its final consumption in the production of foils, Tapes or plates can be used over and over again. The rotating roller (10, 2) is located in the furnace (6) at a temperature of approx. 1300 OC. The oven (6) encloses the rotating roller (10, 2) except for a small part of the upper part Outer surface.
Auf diesen Teil der Mantelfläche strömt aus einem Behälter (3) durch die schlitzförmige Düse (4) flüssiges, ca.A container (3) flows through this part of the lateral surface the slot-shaped nozzle (4) liquid, approx.
1600-°C heißes Silizium (7) in einem sehr gleichmäßigen, z. B. 20~cm breiten Strahl auf das einkristalline n -Silizium (2) an der Mantelfläche der rotierenden Walze (10, 2). Die Längsausdehnung des Düsenschlitzes verläuft dabei parallel zu der Mantellinie der rotierenden Walze. Die in der Bewegungsrichtung der rotierenden Walze liegende Kante der Düsenöffnung (4) kann, wie in der Figur 2 dargestellt, einen Fortsatz aufweisen, der in geringem, gleichmäßigem Abstand in der Bewegungsrichtung über der Walze verläuft und damit dem ausströmenden flüssigen Silizium zumindest während des ersten Teils des Abkühlungs- und Erstarrungsprozesses eine Führung verleiht, die dafür sorgt, daß ein gleichmäßig dickes Siliziumband (5) entsteht. Auch hier folgt die Abstimmung zwischen zugeführter Siliziummenge und Rotationsgeschwindigkeit so, daß ein Siliziuinband mit einer Stärke von etwa 200 ßm entsteht.1600- ° C hot silicon (7) in a very even, z. B. 20 ~ cm wide beam on the monocrystalline n silicon (2) on the lateral surface of the rotating Roller (10, 2). The longitudinal extent of the nozzle slot runs parallel to the surface line of the rotating roller. The ones in the direction of movement of the rotating The edge of the nozzle opening (4) lying on the roller can, as shown in FIG. have an extension that is at a small, even distance in the direction of movement runs over the roller and thus at least the flowing out liquid silicon gives a guide during the first part of the cooling and solidification process, which ensures that a uniform thick silicon tape (5) is produced. Here, too, there is a coordination between the amount of silicon supplied and the speed of rotation so that a silicon band with a thickness of about 200 µm is created.
Die Rotationsgeschwindigkeit der Walze (10, 2) liegt beispielsweise bei 5 Umdr./Sek.' Das aufgebrachte flüssige Silizium (7) enthält Bor oder Gallium in einer Menge, die ihm im erstarrten Zustand eine p-Leitfähigkeit mit einem spezifischen Widerstand von beispielsweise 1 flcm verleihen würde. In diesem Fall weist das tangential von der Walze (10, 2) abgeschleuderte, erstarrte oder erstarrende Siiiziumband (5) einen einseitigen pn-Übergang auf.The speed of rotation of the roller (10, 2) is for example at 5 rev./sec. ' The applied liquid silicon (7) contains boron or gallium in an amount that in the solidified state has a p-conductivity with a specific Would impart resistance of, for example, 1 flcm. In this case it points tangentially solidified or solidified silicon strip (5) thrown off by the roller (10, 2) a one-sided pn junction.
Dieser pn-Übergang kommt dadurch zustande, daß beim Auftreffen des flüssigen p-dotierten Siliziums (7) auf die einkristalline n+-Silizium-Auflage (2) der Molybdän-, Graphit- oder Quarzwalze (10) eine dünne Schicht des n -Siliziums (2) flüssig wird, sich mit dem flüssigen Silizium (7) verbindet und mit diesem fortgeschleudert wird. Zu der Materialabtragung kommt aufgrund der hohen Temperaturen auch ein Diffusionsprozeß hinzu. Das Silizium-Band (5) wird mit Hilfe einer rotierenden wassergekühlten Trommel (9), welche auf Zimmertemperatur TO.gekühlt ist, aufgefangen. Die gesamte Anordnung befindet sich in einer Schutzgasatmosphäre (8),, beispielsweise aus Stickstoff oder Argon, die in einer geschlossenen Kammer (11) aufrecht erhalten wird. In die Walze (10) kann das Heizsystem auch direkt eingebaut werden.This pn-junction comes about when the liquid p-doped silicon (7) on the monocrystalline n + silicon layer (2) the molybdenum, graphite or quartz roller (10) a thin layer of n silicon (2) becomes liquid, combines with the liquid silicon (7) and is thrown away with it will. In addition to the material removal, there is also a diffusion process due to the high temperatures added. The silicon tape (5) is made with the help of a rotating water-cooled drum (9) which is cooled to room temperature TO is caught. the entire arrangement is in a protective gas atmosphere (8) ,, for example of nitrogen or argon, which is maintained in a closed chamber (11) will. The heating system can also be installed directly in the roller (10).
Bezugsziffern 1 Rotierende Scheibe 2 Einkristalline Silizium-Auflage 3 Behälter für flüssiges Silizium 4 Austrittsdüse für Silizium 5 Band aus Silizium 6 Ofen 7 Flüssiges Silizium 8 Schutzgas-Atmosphäre 9 Auffangvorrichtung 10 Rotierende Walze 11 Geschlossene KammerReference numerals 1 rotating disk 2 monocrystalline silicon overlay 3 container for liquid silicon 4 outlet nozzle for silicon 5 strip made of silicon 6 Furnace 7 Liquid silicon 8 Protective gas atmosphere 9 Collecting device 10 Rotating Roller 11 Closed chamber
Claims (18)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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DE19782830522 DE2830522A1 (en) | 1978-07-12 | 1978-07-12 | Silicon strip foil or sheet for solar cells - made by pouring molten stream of silicon onto rotating plate or wheel so continuous cast prod. is obtd. |
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DE19782830522 DE2830522A1 (en) | 1978-07-12 | 1978-07-12 | Silicon strip foil or sheet for solar cells - made by pouring molten stream of silicon onto rotating plate or wheel so continuous cast prod. is obtd. |
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DE2830522A1 true DE2830522A1 (en) | 1980-01-31 |
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DE19782830522 Withdrawn DE2830522A1 (en) | 1978-07-12 | 1978-07-12 | Silicon strip foil or sheet for solar cells - made by pouring molten stream of silicon onto rotating plate or wheel so continuous cast prod. is obtd. |
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Cited By (10)
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FR2473792A1 (en) * | 1980-01-11 | 1981-07-17 | Siemens Ag | Silicon solar cell mfr. - by applying liq. silicon to carrier with cooling rate exceeding crystallisation velocity |
EP0040488A1 (en) * | 1980-05-15 | 1981-11-25 | International Business Machines Corporation | Method of fabricating a ribbon structure |
EP0040306A1 (en) * | 1980-05-15 | 1981-11-25 | International Business Machines Corporation | Method for producing large grain semiconductor ribbons |
DE3048236A1 (en) * | 1980-12-20 | 1982-07-15 | Vacuumschmelze Gmbh, 6450 Hanau | Smelting oven with inductive heating, for low conductivity materials - e.g. silicon, has insulating crucible and central conductive rod |
EP0072565A2 (en) * | 1981-08-19 | 1983-02-23 | HELIOTRONIC Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH | Process for forming large to single crystal ribbons of semiconductor material |
DE3226931A1 (en) * | 1982-07-19 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Process and equipment for producing large-area band-shaped silicon bodies for use in the manufacture of solar cells |
EP0124684A1 (en) * | 1983-04-11 | 1984-11-14 | Allied Corporation | Casting in a thermally-induced, low density atmosphere |
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NL1026377C2 (en) * | 2004-06-10 | 2005-12-14 | Stichting Energie | Method for manufacturing crystalline silicon foils. |
WO2016160582A1 (en) * | 2015-03-27 | 2016-10-06 | Board Of Regents Of The Nevada System Of Higher Education, On Behalf Of The University Of Nevada, Reno | Thin silicon substrate fabrication directly from silicon melt |
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---|---|---|---|---|
DE3000889A1 (en) * | 1980-01-11 | 1981-07-30 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING SOLAR CELLS |
FR2473792A1 (en) * | 1980-01-11 | 1981-07-17 | Siemens Ag | Silicon solar cell mfr. - by applying liq. silicon to carrier with cooling rate exceeding crystallisation velocity |
EP0040488A1 (en) * | 1980-05-15 | 1981-11-25 | International Business Machines Corporation | Method of fabricating a ribbon structure |
EP0040306A1 (en) * | 1980-05-15 | 1981-11-25 | International Business Machines Corporation | Method for producing large grain semiconductor ribbons |
DE3048236A1 (en) * | 1980-12-20 | 1982-07-15 | Vacuumschmelze Gmbh, 6450 Hanau | Smelting oven with inductive heating, for low conductivity materials - e.g. silicon, has insulating crucible and central conductive rod |
EP0072565A3 (en) * | 1981-08-19 | 1985-05-08 | Heliotronic Forschungs- Und Entwicklungsgesellschaft Fur Solarzellen-Grundstoffe Mbh | Process for forming large to single crystal ribbons of semiconductor material |
EP0072565A2 (en) * | 1981-08-19 | 1983-02-23 | HELIOTRONIC Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH | Process for forming large to single crystal ribbons of semiconductor material |
DE3226931A1 (en) * | 1982-07-19 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Process and equipment for producing large-area band-shaped silicon bodies for use in the manufacture of solar cells |
EP0124684A1 (en) * | 1983-04-11 | 1984-11-14 | Allied Corporation | Casting in a thermally-induced, low density atmosphere |
EP0253134A2 (en) * | 1986-06-11 | 1988-01-20 | Manfred R. Kuehnle | Method and apparatus for making ignorganic webs and structures formed thereof |
EP0253134A3 (en) * | 1986-06-11 | 1989-07-19 | Manfred R. Kuehnle | Method and apparatus for making ignorganic webs and structures formed thereof |
NL1026377C2 (en) * | 2004-06-10 | 2005-12-14 | Stichting Energie | Method for manufacturing crystalline silicon foils. |
WO2005122287A1 (en) * | 2004-06-10 | 2005-12-22 | Rgs Development B.V. | Method for the production of crystalline silicon foils |
WO2016160582A1 (en) * | 2015-03-27 | 2016-10-06 | Board Of Regents Of The Nevada System Of Higher Education, On Behalf Of The University Of Nevada, Reno | Thin silicon substrate fabrication directly from silicon melt |
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