DE2560485C2 - Integrierte Schaltung mit einem mehreren I↑2↑L-Torschaltungen gemeinsamen Halbleiterkörper - Google Patents
Integrierte Schaltung mit einem mehreren I↑2↑L-Torschaltungen gemeinsamen HalbleiterkörperInfo
- Publication number
- DE2560485C2 DE2560485C2 DE2560485A DE2560485A DE2560485C2 DE 2560485 C2 DE2560485 C2 DE 2560485C2 DE 2560485 A DE2560485 A DE 2560485A DE 2560485 A DE2560485 A DE 2560485A DE 2560485 C2 DE2560485 C2 DE 2560485C2
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- base
- transistors
- integrated circuit
- complementary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 230000000295 complement effect Effects 0.000 claims description 32
- 239000010410 layer Substances 0.000 description 19
- 239000002344 surface layer Substances 0.000 description 18
- 239000004020 conductor Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
- B22F1/142—Thermal or thermo-mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thermal Sciences (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2560485A DE2560485C2 (de) | 1974-10-09 | 1975-10-09 | Integrierte Schaltung mit einem mehreren I↑2↑L-Torschaltungen gemeinsamen Halbleiterkörper |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7413264A NL7413264A (nl) | 1974-10-09 | 1974-10-09 | Geintegreerde schakeling. |
DE2560485A DE2560485C2 (de) | 1974-10-09 | 1975-10-09 | Integrierte Schaltung mit einem mehreren I↑2↑L-Torschaltungen gemeinsamen Halbleiterkörper |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2560485C2 true DE2560485C2 (de) | 1987-02-26 |
Family
ID=25769828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2560485A Expired DE2560485C2 (de) | 1974-10-09 | 1975-10-09 | Integrierte Schaltung mit einem mehreren I↑2↑L-Torschaltungen gemeinsamen Halbleiterkörper |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE2560485C2 (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2224574A1 (de) * | 1971-05-22 | 1972-11-30 | Philips Nv | Integrierte Schaltung |
-
1975
- 1975-10-09 DE DE2560485A patent/DE2560485C2/de not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2224574A1 (de) * | 1971-05-22 | 1972-11-30 | Philips Nv | Integrierte Schaltung |
Non-Patent Citations (1)
Title |
---|
DE-B: H. Franke, Lexikon der Physik, 3. Aufl., Stuttgart, 1969, S. 709 * |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
Q172 | Divided out of (supplement): |
Ref country code: DE Ref document number: 2545368 |
|
8110 | Request for examination paragraph 44 | ||
8181 | Inventor (new situation) |
Free format text: MULDER, CORNELIS, BEEKBERGEN, NL WULMS, HENRICUS ELISABETH JOZEF, EINDHOVEN, NL |
|
AC | Divided out of |
Ref country code: DE Ref document number: 2545368 Format of ref document f/p: P |
|
D2 | Grant after examination | ||
AC | Divided out of |
Ref country code: DE Ref document number: 2545368 Format of ref document f/p: P |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |