DE2507232A1 - Strahlungsdetektor und verfahren zu dessen herstellung - Google Patents
Strahlungsdetektor und verfahren zu dessen herstellungInfo
- Publication number
- DE2507232A1 DE2507232A1 DE19752507232 DE2507232A DE2507232A1 DE 2507232 A1 DE2507232 A1 DE 2507232A1 DE 19752507232 DE19752507232 DE 19752507232 DE 2507232 A DE2507232 A DE 2507232A DE 2507232 A1 DE2507232 A1 DE 2507232A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- radiation detector
- substrate
- semiconductor material
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005855 radiation Effects 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 52
- 239000000969 carrier Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000003607 modifier Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002667 nucleating agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44722274A | 1974-03-01 | 1974-03-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2507232A1 true DE2507232A1 (de) | 1975-09-11 |
Family
ID=23775470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752507232 Withdrawn DE2507232A1 (de) | 1974-03-01 | 1975-02-20 | Strahlungsdetektor und verfahren zu dessen herstellung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS50120789A (ja) |
| CA (1) | CA1023833A (ja) |
| DE (1) | DE2507232A1 (ja) |
| FR (1) | FR2262865B1 (ja) |
| GB (1) | GB1490799A (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8417303D0 (en) * | 1984-07-06 | 1984-08-08 | Secr Defence | Infra-red detector |
| JPH07105519B2 (ja) * | 1989-10-03 | 1995-11-13 | シャープ株式会社 | 太陽電池セル |
-
1975
- 1975-02-13 CA CA220,007A patent/CA1023833A/en not_active Expired
- 1975-02-19 GB GB704075A patent/GB1490799A/en not_active Expired
- 1975-02-20 DE DE19752507232 patent/DE2507232A1/de not_active Withdrawn
- 1975-02-24 JP JP50023378A patent/JPS50120789A/ja active Pending
- 1975-02-25 FR FR7505853A patent/FR2262865B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS50120789A (ja) | 1975-09-22 |
| AU7847175A (en) | 1976-08-26 |
| FR2262865A1 (ja) | 1975-09-26 |
| CA1023833A (en) | 1978-01-03 |
| GB1490799A (en) | 1977-11-02 |
| FR2262865B1 (ja) | 1978-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE102004049160B4 (de) | Silicium-Solarzelle mit gitterförmigen Elektroden auf beiden Seiten des Siliciumsubstrats und Herstellverfahren für diese Silicium-Solarzelle | |
| DE2632987C2 (de) | Fotovoltaisches Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE3650287T2 (de) | Halbleiter-Photodetektor mit einem zweistufigen Verunreinigungsprofil. | |
| DE2823967C2 (ja) | ||
| DE3111828A1 (de) | Vorrichtung zur umsetzung elektromagnetischer strahlung in elektrische energie | |
| DE2246115A1 (de) | Photovoltazelle mit feingitterkontakt und verfahren zur herstellung | |
| DE2752439A1 (de) | Verfahren zur herstellung von silicium-halbleiteranordnungen unter einsatz einer ionenimplantation und zugehoerige halbleiteranordnung | |
| DE4010302B4 (de) | Verfahren zum Herstellen einer fotovoltaischen Einrichtung | |
| DE2743141A1 (de) | Amorphes silizium aufweisende bauelemente | |
| DE102006003283A1 (de) | Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen | |
| DE2917564A1 (de) | Verfahren zum herstellen von solarzellen und dadurch hergestellte gegenstaende | |
| DE3032158A1 (de) | Solarzelle | |
| DE2711365C2 (ja) | ||
| DE19605633A1 (de) | Verfahren zur Herstellung von Dioden mit verbesserter Durchbruchspannungscharakteristik | |
| DE3246948C2 (ja) | ||
| DE2259197A1 (de) | Elektrolumineszierende diode | |
| DE2735937C2 (de) | Flüssigphasenepitaxie-Verfahren zur Herstellung von Halbleiter-Heterostrukturen | |
| DE1539090B1 (de) | Integrierte Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE2702451B2 (de) | Halbleiteranordnung | |
| DE2031831A1 (de) | Halbleiterdiode und Verfahren zu ihrer Herstellung | |
| DE1802849B2 (de) | Verfahren zum herstellen einer monolithischen schaltung | |
| DE2507232A1 (de) | Strahlungsdetektor und verfahren zu dessen herstellung | |
| DE2408402A1 (de) | Verfahren zur herstellung integrierter schaltungen bzw. nach einem solchen verfahren hergestellte integrierte halbleiterschaltungseinheit | |
| DE4416549C2 (de) | Verfahren zur Herstellung einer Solarzelle | |
| DE2639364A1 (de) | Thyristor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8130 | Withdrawal |