DE2216060C3 - Ladungsgekoppeltes Bauelement mit einem planaren Ladungsspeichermedium - Google Patents

Ladungsgekoppeltes Bauelement mit einem planaren Ladungsspeichermedium

Info

Publication number: DE2216060C3
Authority: DE; Germany
Prior art keywords: layer; storage; component according; semiconductor; electrodes
Prior art date: 1971-04-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

DE19722216060

Other languages

German (de)

English (en)

Other versions

DE2216060B2 (de

DE2216060A1 (de

Inventor

Willard Sterling Summit Boyle

Robert Harold South Plainfield Krambeck

George Elwood Murray Hill Smith

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

AT&T Corp

Original Assignee

Western Electric Co Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1971-04-06

Filing date

1972-04-01

Publication date

1980-01-03

1972-04-01 Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc

1972-10-12 Publication of DE2216060A1 publication Critical patent/DE2216060A1/de

1977-01-20 Publication of DE2216060B2 publication Critical patent/DE2216060B2/de

1980-01-03 Application granted granted Critical

1980-01-03 Publication of DE2216060C3 publication Critical patent/DE2216060C3/de

Status Expired legal-status Critical Current

Links

238000003860 storage Methods 0.000 title claims description 67
239000004065 semiconductor Substances 0.000 claims description 49
239000002800 charge carrier Substances 0.000 claims description 33
229910052751 metal Inorganic materials 0.000 claims description 17
239000002184 metal Substances 0.000 claims description 17
230000004888 barrier function Effects 0.000 claims description 14
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
229910052710 silicon Inorganic materials 0.000 claims description 8
239000010703 silicon Substances 0.000 claims description 8
238000012546 transfer Methods 0.000 claims description 6
239000000463 material Substances 0.000 claims description 4
230000015572 biosynthetic process Effects 0.000 claims description 3
150000002739 metals Chemical class 0.000 claims description 3
229910052802 copper Inorganic materials 0.000 claims description 2
239000000203 mixture Substances 0.000 claims description 2
229910052750 molybdenum Inorganic materials 0.000 claims description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 2
229910052721 tungsten Inorganic materials 0.000 claims description 2
238000011109 contamination Methods 0.000 claims 2
238000012432 intermediate storage Methods 0.000 claims 1
229910052759 nickel Inorganic materials 0.000 claims 1
229910021332 silicide Inorganic materials 0.000 claims 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
108091006146 Channels Proteins 0.000 description 12
239000012212 insulator Substances 0.000 description 9
238000004519 manufacturing process Methods 0.000 description 6
230000005540 biological transmission Effects 0.000 description 5
230000005684 electric field Effects 0.000 description 4
230000006798 recombination Effects 0.000 description 4
238000005215 recombination Methods 0.000 description 4
239000000969 carrier Substances 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
230000000295 complement effect Effects 0.000 description 2
239000013078 crystal Substances 0.000 description 2
230000007547 defect Effects 0.000 description 2
238000006073 displacement reaction Methods 0.000 description 2
238000002474 experimental method Methods 0.000 description 2
230000002349 favourable effect Effects 0.000 description 2
238000009413 insulation Methods 0.000 description 2
230000007246 mechanism Effects 0.000 description 2
238000000034 method Methods 0.000 description 2
230000008569 process Effects 0.000 description 2
239000000758 substrate Substances 0.000 description 2
108010075750 P-Type Calcium Channels Proteins 0.000 description 1
230000009286 beneficial effect Effects 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
239000002131 composite material Substances 0.000 description 1
238000013461 design Methods 0.000 description 1
238000011161 development Methods 0.000 description 1
230000018109 developmental process Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000009826 distribution Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000007772 electrode material Substances 0.000 description 1
230000005284 excitation Effects 0.000 description 1
230000006870 function Effects 0.000 description 1
238000002513 implantation Methods 0.000 description 1
230000010365 information processing Effects 0.000 description 1
230000010220 ion permeability Effects 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
238000002955 isolation Methods 0.000 description 1
210000003041 ligament Anatomy 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
230000000737 periodic effect Effects 0.000 description 1
230000036316 preload Effects 0.000 description 1
238000012545 processing Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
230000003716 rejuvenation Effects 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/7685—Three-Phase CCD
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Ceramic Engineering (AREA)
Manufacturing & Machinery (AREA)
Semiconductor Memories (AREA)
Charge And Discharge Circuits For Batteries Or The Like (AREA)
Control Of Eletrric Generators (AREA)

DE19722216060 1971-04-06 1972-04-01 Ladungsgekoppeltes Bauelement mit einem planaren Ladungsspeichermedium Expired DE2216060C3 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US13172171A	1971-04-06	1971-04-06
US13172271A	1971-04-06	1971-04-06

Publications (3)

Publication Number	Publication Date
DE2216060A1 DE2216060A1 (de)	1972-10-12
DE2216060B2 DE2216060B2 (de)	1977-01-20
DE2216060C3 true DE2216060C3 (de)	1980-01-03

Family

ID=26829735

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE19722216060 Expired DE2216060C3 (de)	1971-04-06	1972-04-01	Ladungsgekoppeltes Bauelement mit einem planaren Ladungsspeichermedium

Country Status (11)

Country	Link
JP (1)	JPS522793B1 (sv)
BE (1)	BE781627A (sv)
CH (1)	CH544375A (sv)
DE (1)	DE2216060C3 (sv)
ES (1)	ES401458A1 (sv)
FR (1)	FR2132441B1 (sv)
HK (1)	HK35176A (sv)
IE (1)	IE36249B1 (sv)
IT (1)	IT954399B (sv)
NL (1)	NL167056B (sv)
SE (1)	SE383573B (sv)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2264125A1 (de) *	1971-12-29	1973-07-19	Hitachi Ltd	Ladungsgekoppelte halbleitereinrichtung

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2316612A1 (de)	1972-04-03	1973-10-18	Hitachi Ltd	Ladungsuebertragungs-halbleitervorrichtungen
NL181766C (nl) *	1973-03-19	1987-10-16	Philips Nv	Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
US3852799A (en) *	1973-04-27	1974-12-03	Bell Telephone Labor Inc	Buried channel charge coupled apparatus
GB1595253A (en) *	1977-01-24	1981-08-12	Hitachi Ltd	Solid-state imaging devices
DE2713876C2 (de) *	1977-03-29	1983-09-22	Siemens AG, 1000 Berlin und 8000 München	Ladungsgekoppeltes Element (CCD)
DE2743245A1 (de) *	1977-09-26	1979-04-05	Siemens Ag	Ladungsgekoppeltes bauelement

1972
- 1972-03-27 SE SE394572A patent/SE383573B/sv unknown
- 1972-03-28 IT IT4928372A patent/IT954399B/it active
- 1972-04-01 DE DE19722216060 patent/DE2216060C3/de not_active Expired
- 1972-04-04 BE BE781627A patent/BE781627A/xx not_active IP Right Cessation
- 1972-04-05 ES ES401458A patent/ES401458A1/es not_active Expired
- 1972-04-05 NL NL7204528A patent/NL167056B/xx not_active IP Right Cessation
- 1972-04-05 IE IE43072A patent/IE36249B1/xx unknown
- 1972-04-05 FR FR7211888A patent/FR2132441B1/fr not_active Expired
- 1972-04-06 JP JP3399272A patent/JPS522793B1/ja active Pending
- 1972-04-06 CH CH504872A patent/CH544375A/de not_active IP Right Cessation
1976
- 1976-06-10 HK HK35176A patent/HK35176A/xx unknown

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2264125A1 (de) *	1971-12-29	1973-07-19	Hitachi Ltd	Ladungsgekoppelte halbleitereinrichtung

Also Published As

Publication number	Publication date
DE2216060B2 (de)	1977-01-20
SE383573B (sv)	1976-03-15
FR2132441B1 (sv)	1976-10-29
NL7204528A (sv)	1972-10-10
IT954399B (it)	1973-08-30
JPS522793B1 (sv)	1977-01-24
ES401458A1 (es)	1975-09-01
HK35176A (en)	1976-06-18
BE781627A (fr)	1972-07-31
IE36249L (en)	1972-10-06
IE36249B1 (en)	1976-09-15
NL167056B (nl)	1981-05-15
AU4079372A (en)	1973-09-06
DE2216060A1 (de)	1972-10-12
FR2132441A1 (sv)	1972-11-17
CH544375A (de)	1973-11-15

Legal Events

Date	Code	Title	Description
1980-01-03	C3	Grant after two publication steps (3rd publication)

Publication	Publication Date	Title
DE2412699C2 (de)	1982-05-27	Ladungsgekoppeltes Halbleiterbauelement
DE2107022C3 (sv)	1979-02-08
DE2706623C2 (sv)	1988-01-28
DE2829966C2 (de)	1985-11-14	Halbleiterspeichervorrichtung
DE2810597C2 (de)	1987-03-05	Elektrische Bauelementstruktur mit einer mehrschichtigen Isolierschicht
DE2919522A1 (de)	1979-11-22	Ladungsuebertragungs-bauelement
DE2547828A1 (de)	1976-07-01	Halbleiter-speicherelement und verfahren zur herstellung desselben
DE2201150A1 (de)	1972-08-10	Ladungsgekoppelte Halbleiterschaltung
DE69123950T2 (de)	1997-05-28	SOI-Feldeffekttransistor und dessen Herstellungsverfahren
DE2252148C3 (de)	1981-07-30	Ladungsgekoppelte Halbleiteranordnung und Verfahren zu ihrem Betrieb
DE2504088C2 (de)	1984-04-12	Ladungsgekoppelte Anordnung
DE2503864A1 (de)	1976-08-05	Halbleiterbauelement
DE2216060C3 (de)	1980-01-03	Ladungsgekoppeltes Bauelement mit einem planaren Ladungsspeichermedium
DE2748222A1 (de)	1978-05-11	Kondensatorspeicheranordnung
DE2231565A1 (de)	1973-01-18	Umsteuerbare zweiphasige ladungsgekoppelte baueinheit
DE2742935C3 (de)	1980-11-06	Nichtflüchtiger Langzeitspeicher
DE3544450C2 (sv)	1991-02-28
DE3231195A1 (de)	1983-03-03	Datenspeichervorrichtung
DE2542698A1 (de)	1976-04-22	Halbleiteranordnung
EP0006465B1 (de)	1981-09-30	Ladungsgekoppeltes Zwei-Kanal-Halbleiterbauelement
DE3731000C2 (de)	1995-10-12	Integrierte Halbleiteranordnung mit p-Kanal- und n-Kanal-Feldeffekttransistoren
DE2502481C2 (sv)	1989-04-20
DE69220126T2 (de)	1997-12-04	Ladungsgekoppelte Anordnung
DE2624409C2 (de)	1987-02-12	Schottky-Transistor-Logik-Anordnung
DE2418582C3 (de)	1978-09-14	MNOS-Transistor, insbesondere MNOS-Transistor mit kurzer Kanalzone, für kurze Einschreibzeiten

DE2216060C3 - Ladungsgekoppeltes Bauelement mit einem planaren Ladungsspeichermedium - Google Patents

Info

Links

Classifications

Landscapes

Applications Claiming Priority (2)

Publications (3)

Family

ID=26829735

Family Applications (1)

Country Status (11)

Cited By (1)

Families Citing this family (6)

Cited By (1)

Also Published As

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Legal Events