DE2150695A1 - Semiconductive elements - formed on metallic support provided with intermediate insulating layer - Google Patents
Semiconductive elements - formed on metallic support provided with intermediate insulating layerInfo
- Publication number
- DE2150695A1 DE2150695A1 DE19712150695 DE2150695A DE2150695A1 DE 2150695 A1 DE2150695 A1 DE 2150695A1 DE 19712150695 DE19712150695 DE 19712150695 DE 2150695 A DE2150695 A DE 2150695A DE 2150695 A1 DE2150695 A1 DE 2150695A1
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- intermediate layer
- metallic body
- insulating
- insulating intermediate
- coated
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- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
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Abstract
Description
Verfahren zum isolierten Aufbau von Halbleiterelementen gedruckten und/oder monolithisch und/oder hybrid intenrierten Schaltungen Die Erfindung betrifft ein Verfahren zum isolierten Aufbau von Halbleiterelementen, gedruckten und/oder monolithisch und/oder hybrid integrierten Schaltungen auf einem metallischen, als Träger dienenden Körper. Process for the isolated construction of printed semiconductor elements and / or monolithically and / or hybrid integrated circuits. The invention relates to a method for the isolated construction of semiconductor elements, printed and / or monolithic and / or hybrid integrated circuits on a metallic, as Body serving the carrier.
Plättchen aus Halbleiterkristallen können je nach dem Herstellungs verfahren die verschiedenartigsten Hauelemente bilden, wie beispielsweise Dicden, Transistoren, Thyristoren; sie können aber auch ganze Schaltungen oder Teile daraus enthalten. Die in den Plättchen umgesetzte Verlustwärme muß nach außen abgeführt werden. Die Plättchen sind deshalb meist auf den Boden eines Metallgehäuses aufge lötet oder auflegiert. Die aufgelötete Seite des Halbleiterkristalls, das Substrat, stellt normalerweise eine Elektrode, die Substratelektrode, des Halbleitersystems dar. Enthält eine Schaltung mehrere Halbleiterbauelemente, so können deren Substratelektroden auf unterschiedlichen Potentialen liegen. Sollen sie sich auf einem gemeinsamen metallischen Körper befinden, so müssen die Substrate gegeneinander isoliert werden. Bei einzelverpackten Bauelementen geschieht dies durch Einbringen dünner Plättchen aus Isoliermaterial, wie beispielsweise Glimmer oder Teflon, zwischen den Gehäuseboden und den gemeinsamen metallischen Körper. Es sind aber auch einzelverpackte Bauelemente, wie beispielsweise Hochfrequenztransistoren, bekannt, bei denen zwischen den Kristall und das Meiallgehäuse eine isolierende Scheibe aus keramischem Material eingebracht ist. Auch ist es bekannt, Anordnungen, die zwei oder mehr Halbleiterkristalle enthalten, auf keramischen Plättchen aufzubauen. Besteht diese Keramik aus billigem Material, wie beispielsweise Aluminiumoxyd, so läßt sich wegen der geringen Wärmeleitfähigkeit dieses Materials nur eine geringe Verlustleistung abführen. Größere Verlustleistungen, vor allem aber hohe Verlustlcistungsdichten, wie sie besonders bei Leistungshalbleitern und monolithisch integrierten Schaltungen vorkommen, lassen sich aber nur mit keramischen Plättchen aus einem Material hoher Wärmeleitfähigkeit, wie beispielsweise aus dem sehr teueren Berylliumoxyd, erreichen.Semiconductor crystal flakes, depending on the manufacturing process process form the most diverse building elements, such as Dicden, Transistors, thyristors; but they can also be entire circuits or parts thereof contain. The heat loss converted in the platelets must be dissipated to the outside will. The platelets are therefore mostly on the bottom of a metal case soldered or alloyed. The soldered-on side of the semiconductor crystal, the Substrate, normally represents an electrode, the substrate electrode, of the semiconductor system If a circuit contains several semiconductor components, their substrate electrodes are at different potentials. Should they be on a common metallic bodies are located, the substrates must be insulated from one another. In the case of individually packaged components, this is done by inserting thin plates made of insulating material, such as mica or Teflon, between the housing base and the common metallic body. But there are also individually packaged components, such as high frequency transistors, known where between the crystal and the metal housing introduced an insulating disk made of ceramic material is. It is also known that arrangements which contain two or more semiconductor crystals to be built on ceramic plates. Is this ceramic made of cheap material, such as aluminum oxide, because of its low thermal conductivity dissipate only a small amount of power loss from this material. Larger power losses, Above all, however, high power loss densities, such as those found in power semiconductors in particular and monolithic integrated circuits occur, but can only be achieved with ceramic Platelets made of a material of high thermal conductivity, such as the very expensive beryllium oxide.
Der Erfindung liegt die Aufgabe zugrunde, ein vereinfachtes und verbilligtes Verfahren der eingangs genannten Art zu entwickeln.The invention is based on the object of a simplified and cheaper Process of the type mentioned to develop.
Erfindungsgemäß wird diese Aufgabe dadurch gelöst, daß eine isolierende Zwischenschicht aus einem festen, pulver- oder pastenförmigen Ausgangszustand durch einen thermischen Prozeß unmittelbar auf dem metallischen Körper erzeugt wird Im Gegensatz zu selbsttragenden keramischen Plättchen oder Scheiben, die aus Festigkeitsgründen meist Dicken von 1 mm und mehr haben müssen, lassen sich auf dem tragfähigen metallischen Körper sehr viel dünnere organische oder anorganische Schichten erzeugen, die beispielsweise bereits bei Dicken von 0,05 mm hinreichend elektrisch isolieren. Bei dem erfindungsgemäBen Verfahren kann die Dicke der Isolation somit ungefähr eine Größenordnung und mehr dünner sein als bei den bekannten Verfahren. Damit lassen sich aber noch mit Schichten aus einem sehr viel schlechter wärmeleitenden Material als Berylliumoxyd, wie beispielsweise die Oxyde von Aluminium, Chrom, Magnesium bis hin zum Porzellan oder glasigen oder emailleartigen Schichten hinreichend große Wärmeströme beziehungsweise Wärmestromdichten erzielen. Größte Wärmestromdichten lassen sich auch hier mit Berylliumoxyd erreichen, wobei sich als Vorteil ein außerordentlich geringer Stoffbedarf ergibt.According to the invention this object is achieved in that an insulating Intermediate layer from a solid, powdery or paste-like initial state through a thermal process is generated directly on the metallic body in the In contrast to self-supporting ceramic plates or discs, which are for reasons of strength mostly thicknesses of 1 mm and more can be applied to the load-bearing metallic Body produce much thinner organic or inorganic layers, for example Insulate sufficiently electrically even at thicknesses of 0.05 mm. In the inventive Method, the thickness of the insulation can thus be approximately an order of magnitude or more be thinner than with the known methods. But this can still be done with layers made of a material that is much less thermally conductive than beryllium oxide, such as the oxides of aluminum, chromium, magnesium up to porcelain or glassy or enamel-like layers have sufficiently large heat flows or heat flow densities achieve. Greatest heat flux densities can also be achieved here with beryllium oxide, The advantage is that there is an extremely low material requirement.
Keramische Schichten können wegen ihres hohen Schmelzpunkts normalerweise nicht auf Metalle aufgeschmolzen werden. Die Erfindung sieht deshalb vor, vorzugsweise Schichten mit einem höheren Schmelzpunkt als dem des Trägermetalls mittels des Plasmaspritzverfahrens aufzutragen, wobei nicht zu beschichtende Flächen durch geeignete Maskiertechniken freigehalten-werden. Neben dem direkten Abdecken nicht zu beschichtender Flächen während des Plasmaspritzens durch Masken wird ein indirektes Maskierverfahren vorgeschlagen, das darauf beruht, die nicht zu beschichtenden Flächen mit einer organischen oder anorganischen Substanz, wie beispie sweise mit einem 1 Leck, zu verseehen, die wcjhrend des thermischen Auftrags der isolierenden Zwischenschicht zersetzt wird und so ein Haften der isolierenden Zwischenschicht auf den lackierten Stellen verhindert. Bei einer den thermischen Prozeß überdauerndes organischen oder anorganischen Substanz kann diese auch anschließend mittels aines Lösungsmittels zusammen mit der nachträglich aufgebrachten isolierenden Zwischenschicht entfernt werden, wobei sich quellende Sub@tanzen besonders aignen.Ceramic layers usually can because of their high melting point are not melted onto metals. The invention therefore provides, preferably Layers with a higher melting point than that of the carrier metal by means of the plasma spraying process to be applied, with areas not to be coated by suitable masking techniques to be kept free. In addition to the direct covering of areas not to be coated an indirect masking method is proposed during plasma spraying through masks, that is based on the surfaces not to be coated with an organic or inorganic substance, for example with a 1 leak, to be provided continuously the thermal application of the insulating intermediate layer is decomposed and so a Prevents the insulating intermediate layer from sticking to the painted areas. at an organic or inorganic substance that survives the thermal process this can also be done afterwards using a solvent together with the afterwards applied insulating intermediate layer are removed, whereby swelling Sub @ dance especially suitable.
Für glasige und emailleartige Zwischenschichten ist darüber hinaus vorgesehen, diese in pastenförmigern Zustand nur auf die zu isolierenden Teilflächen aufzudrucken, beispielsweise mittels des bekannten Siebdruckverfahrens.For glassy and enamel-like intermediate layers is also provided, this in a paste-like state only on the partial surfaces to be isolated to be printed, for example by means of the known screen printing process.
Um eine besonders große Beständigkeit der herzustellenden Anordnungen gegenüber Temperaturwechsel zu erreichen, ist vorgesehen, die Koeffizienten der Wärmeausdehnung von metallischem Körper und isolierender Zwischenschicht einander anzupassen. Hierzu kann es vorteilhaft sein, Mischungen oder Verbindungen verschiedener Oxyde oder auch mehrere Schichten verschiedener Zusammensetzung zu erwenden. Bei glasigen oder emailleartigen Schichten sind viele Paarungen mit gleicher oder ähnlicher Wärmeausedehnung möglich.To ensure that the assemblies to be produced are particularly stable to achieve temperature changes, it is provided that the coefficient of Thermal expansion of the metallic body and the insulating intermediate layer against each other adapt. For this purpose, it can be advantageous to use mixtures or compounds of different Oxides or several layers of different composition to use. at glassy or enamel-like layers are many pairings with the same or similar Thermal expansion possible.
Auch eine große Haftfestigkeit ist anzustreben. Diese wird in Weiterbildung der Erfindung erhöht durch Aufrauhen mittels Sandstrahlen oder durch ätzen der zu beschichtenden Oberfläche des metallischen Körpers. Auch eine chemische Vernderung der zu beschichtenden Oberfläche, beispielsweise eine Oxydation, erweist sich besonders bei glasigen oder emaillcartigen Schichten als vorteilhaft.A high level of adhesive strength is also desirable. This is in continuing education the invention increased by roughening by means of sandblasting or by etching the too coating surface of the metallic body. Also a chemical change the surface to be coated, for example an oxidation, proves particularly advantageous for glassy or enamel-like layers.
Soll die isolierende Zwischenschicht als Unterlage für einen Halb~ leitertristall dienen, so muß ihre freie Oberfläche ganz oder teilweise mit einer löt- oder legierungsfähigen Metallisierung versehen sein. Erfindungsgemäß wird vorgeschlagen, diese Metallisierung mittels Metallfarben aufzudrucken und einzubrennen, wobei als Bestandteile löt- oder legierungefähiger Metallfarben vorzugsweise Silber, Gold, Platin oder tlickel beziehungsweise die Eutektika von Gold-Germanium und/oder Gold-Silizium dienen. Die Metallisierung laßt sich aber ebenso im Plasmaspritzverfahr en auftragen wie im Valuurn aufstäuben oder aufdampfen.Should the insulating intermediate layer serve as a base for a half ~ Serve ladder crystal, their free surface must be wholly or partially with a be solderable or alloyable metallization. According to the invention it is proposed to print and burn in this metallization by means of metal colors, whereby as Components of metal colors suitable for soldering or alloying, preferably silver, gold, Platinum or tlickel or the eutectics of gold-germanium and / or gold-silicon to serve. The metallization can, however, also be applied by plasma spraying dust or vaporize like in Valuurn.
Anhand der Zeichnung soll die Erfindung näher erläutert werden.The invention is to be explained in more detail with the aid of the drawing.
Es zeigen: Fig. 1 den Metallboden eines modifizierten Transistorgehäuses für den Spannungsregler einer Lichtmaschine, Fig. 2 den fertig montierten Spannungsregler auf demselben Boden mit einem monolithisch integrierten Schaltkreis, einem Leistungstransistor und einer Freilaufdiode. In Fig. 3 ist ebenfalls ein Spannungsregler dargestellt, der aber anstelle der monolithisch integrierten Schaltung ein Dickschichtnetzwerk enthält, das mittels des Siebdruckverfahrens hergestellt ist, wobei mehrere Halbleiterkomponenten erforderlich sind.They show: FIG. 1 the metal base of a modified transistor housing for the voltage regulator of an alternator, Fig. 2 the fully assembled voltage regulator on the same floor with a monolithic integrated circuit, a power transistor and a freewheeling diode. In Fig. 3, a voltage regulator is also shown, but instead of the monolithic integrated circuit, a thick-film network contains, which is produced by means of the screen printing process, wherein a plurality of semiconductor components required are.
In Fig. 1 ist mit 1 der metallische Körper des modifizierten Transistorgehäuses bezeichnet. Mit 2, 3 und 4 sind pfostenartig ausgebildete Anschlußleiter bezeichnet. Mit 5 ist eine keramische Zwischenschicht bezeichnet, die beispielsweise im Plasmaspritzverfahren aufgetragen sein kann. Ferner ist eine ebenfalls plasmagespritzte lötfähige Metallisierung 6 vorgesehen, die zur Aufnahme eines Leistungstransistors und einer Freilaufdiode dient. Die Metallisierung ist mit etwas kleinerer Fläche ausgeführt, so daß ein in sich geschlossener isolierender Rand stehen bleibt, der einen Kurzschluß zwischen Metallisierung und metallischem Körper mit Sicherheit verhindert. Dic halbkreisförmige Erweiterung der Metallisierung dient als Anschlußfleck für den ßonddraht.In Fig. 1, 1 is the metallic body of the modified transistor housing designated. With 2, 3 and 4 post-like connection conductors are designated. 5 with a ceramic intermediate layer is referred to, for example in the plasma spraying process can be applied. There is also a solderable metallization which is also plasma-sprayed 6 is provided, which is used to accommodate a power transistor and a freewheeling diode serves. The metallization is carried out with a slightly smaller area, so that a self-contained insulating edge remains, which is a short circuit between Metallization and metallic body prevented with security. Dic semicircular The extension of the metallization serves as a connection point for the bond wire.
In Fig. 2 ist der fertig montierte Spannungsregler dargestellt.In Fig. 2, the fully assembled voltage regulator is shown.
Mit 7 ist die einseitig mit dem Kollektor des Leistungstran sistors 8 verbundene Freilaufdiode und mit 9 die monolithisch integrierte Schaltung bezeichnet. Die Positionen 10 bis 15 sind Bonddrähte zum Verbinden der einzelnen Komponenten untereinander und mit den pfostenartig ausgebildeten Anschlußleitern 2, 3 und 4.With 7 is the one-sided with the collector of the power transistor sistor 8 connected freewheeling diode and 9 denotes the monolithic integrated circuit. Positions 10 to 15 are bonding wires for connecting the individual components among themselves and with the post-like connection conductors 2, 3 and 4.
Der Anschlußpfosten 2 führt zur nicht gezeichneten Erregerwicklung der Lichtmaschine. Er ist ferner über den Bonddraht 10 mit der Metallisierung 6 verbunden. Der Bonddraht 11 verbindet den Emitter des Transistors 8 mit dem den Minuspol darstellenden metallischen Körper. Der Bonddraht 12 verbindet den anderen Pol der Freilaufdiode mit dem zum Pluspol führenden Anschlußpfosten 4, an den über den Bonddraht 13 auch der positive Anschluß der monolithisch integrierten Schaltung 9 angeschlossen ist. Der Bonddraht 14 stellt die Verbindung des Ausgangs der monolithisch integrierten Schaltung 9 mit der Basis des Transistors 8 her, und der Bonddraht 15 verbindet einen weiteren Anschlußpunkt der monolithisch integrierten Schaltung 9 mit dem pfostenartig ausgebildeten Anschlußleiter 3, der den Anschluß äußerer Bauelemente erlaubt.The connection post 2 leads to the excitation winding, not shown the alternator. It is also connected to the metallization 6 via the bonding wire 10 tied together. The bonding wire 11 connects the emitter of the transistor 8 with the Metallic body representing the negative pole. The bonding wire 12 connects the other Pole of the freewheeling diode with the connection post 4 leading to the positive pole, to the over the bonding wire 13 is also the positive connection of the monolithic integrated circuit 9 is connected. The bonding wire 14 provides the connection of the output of the monolithic integrated circuit 9 with the base of transistor 8, and the bonding wire 15 connects another connection point of the monolithic integrated circuit 9 with the post-like connection conductor 3, which connects the outer Components allowed.
Im weiteren Ausführungsbeispiel gemäß Fig. 3 dient als rnetallischer Körper eine auf der Oberseite ganzflächig mit der isolierenden Zwischenschicht beschichtete ebene Metallplatte 16.In the further exemplary embodiment according to FIG. 3, it is used as a metallic Body one coated over the entire surface with the insulating intermediate layer flat metal plate 16.
Die Schichten 26, 27, 28, 29, 30 und 31 sind Metallisierungen zum Auflöten von Komponenten beziehungsweise zum Schaffen von Verbindungen. Die Schichten 21, 22, 23, 24 und 25 sind Dickschichtwiderstande. Die Schichten 21 bis 31 dünnen im Siebdruckverfahren aufgebracht werden. Diese Schichten können aber auch ganz oder teilweise als dünne Schichten im Vakuum aufgebracht werden. Mit 7, 18, 20, 32 und 33 sind Haibleiterkomponenten und mit 17 ein Kondensator bezeichnet. Von den nach außen führenden Anschlußdrähten geht der Anschlußdraht 4 zum Pluspol, der Anschlußdraht 41 zum Minuspol und der Anschlußdraht 2 wieder zur Erregerwicklung der Lichtmaschine, wrend die Drähte 34 bis 40 Bonddrähte für innere Verbindungen darstellen. Mit der an den Pluspol angeschlossenen Metallisierung 27 sind einseitig die Widerstände 21 und 25, sowie über den Bonddraht 39 der eine Pol der Freilaufdiode 7 verbunden, die mit ihrem anderen Pol aci r clie Metallisierung 26 aufgelötet ist. Auf die Metallisierung 26 ist auch mit seinem Kollektor der monolithische Leistungsver starker iB in Darlingtonschaltung aufgelötet, außerdem bildet die Metallisierung 26 noch die eine Anschlußelektrode des Wider~ standes 22. Der Minuspol wird durch die Metallisierung 28 über den Draht 34 zu einem Belag des Kondensators 17 geführt. Er bildet ferner eine Anschlußelektrode des Widerstandes 23 und ist über den Bonddraht 38 mit dem Emitter des Leistungsverstärkers 18 und über den Bonddraht 40 mit dem Emitter der monolithischen Vorstufe 20, die einen Transistor, einen Widerstand und eine Zenerdiode als Referenzelement für die Spannung enthält, verbunden.The layers 26, 27, 28, 29, 30 and 31 are metallizations for Soldering components or creating connections. The layers 21, 22, 23, 24 and 25 are thick film resistors. Thin layers 21 to 31 can be applied by screen printing. However, these layers can also be whole or partially applied as thin layers in a vacuum. At 7, 18, 20, 32 and 33 are semiconductor components and 17 denotes a capacitor. from the connecting wires leading to the outside, the connecting wire 4 goes to the positive pole, the Connecting wire 41 to the negative pole and the connecting wire 2 back to the field winding the alternator, while wires 34 to 40 bond wires for internal connections represent. With the metallization 27 connected to the positive pole are one-sided the resistors 21 and 25, as well as one pole of the freewheeling diode via the bonding wire 39 7 connected to its other pole aci r clie Metallization 26 is soldered on. On the metallization 26 is also the monolithic collector with its collector Power amplifier iB soldered in Darlington connection, also forms the metallization 26 also the one connection electrode of the resistor 22. The negative pole is through the metallization 28 is guided via the wire 34 to a coating on the capacitor 17. It also forms a connection electrode of the resistor 23 and is over the bonding wire 38 to the emitter of the power amplifier 18 and via the bonding wire 40 to the Emitter of the monolithic precursor 20, which has a transistor, a resistor and contains a Zener diode as a reference element for the voltage.
Die Vorstufe 20 ist mit ihrem Kollektor auf die Metallisierung 19 aufgelötet, die die andere Anschlußelektrode deS Widerstandes 21 bildet und über den Bonddraht 37 mit der Basis des Darlington Leistungsverstarkers 18 verbunden ist. Auf der Metallisierung 31 sitzen die beiden Diodenchips 32 und 33, wobei der Chip 32 über den Bonddraht 36 mit dem Zener-Referenzelement der Vorstufe 20, und der Chip 33'über den Bonddraht 35 mit der iletallisierung 30 verbunden ist. Die Schicht 30 verbindet außerdem noch je ein Ende der Widerstände 22, 23 und 24 miteinander. Die noch freien Anschlußelektroden der Widerstände 24 und 25 werden gemeinsam durch die Metallisierung 29 gebildet, auf die noch der Kondensator 17 mit seinem anderen Belag aufgelötet ist.The preliminary stage 20 with its collector is on the metallization 19 soldered, which forms the other terminal electrode of the resistor 21 and over the bond wire 37 is connected to the base of the Darlington power amplifier 18 is. The two diode chips 32 and 33 sit on the metallization 31, the Chip 32 via bond wire 36 to the Zener reference element of preliminary stage 20, and the chip 33 ′ is connected to the metallic coating 30 via the bonding wire 35. the Layer 30 also connects one end of each of the resistors 22, 23 and 24 to one another. The still free connection electrodes of the resistors 24 and 25 are through together the metallization 29 is formed, on which the capacitor 17 with its other The lining is soldered on.
Anhand der gezeigten Beispiele läßt sich die Erfindung weiter ausgestalten zu Anordnungen mit einzelverpackten Bauelementen, sogenannten Muitichipanordnungen, komplexeren hybriden Anordnungen und Anordnungen mit rein passiven netzwerken, wobei die isolierende Zwischenschichten tragenden Metallplatten weniger als wärn,eabführende Elemente als vielmehr als billige Substrate dienen können.The invention can be further developed on the basis of the examples shown to arrangements with individually packaged components, so-called multi-chip arrangements, more complex hybrid arrangements and arrangements with purely passive networks, whereby The metal plates supporting the insulating intermediate layers are less dissipative than they would be Elements rather than serve as cheap substrates.
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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DE19712150695 DE2150695B2 (en) | 1971-10-12 | 1971-10-12 | PROCESS FOR THE INSULATED CONSTRUCTION OF SEMICONDUCTOR ELEMENTS, PRINTED AND / OR MONOLITHIC AND / OR HYBRID INTEGRATED CIRCUITS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19712150695 DE2150695B2 (en) | 1971-10-12 | 1971-10-12 | PROCESS FOR THE INSULATED CONSTRUCTION OF SEMICONDUCTOR ELEMENTS, PRINTED AND / OR MONOLITHIC AND / OR HYBRID INTEGRATED CIRCUITS |
Publications (2)
Publication Number | Publication Date |
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DE2150695A1 true DE2150695A1 (en) | 1973-04-19 |
DE2150695B2 DE2150695B2 (en) | 1977-09-15 |
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Application Number | Title | Priority Date | Filing Date |
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DE19712150695 Ceased DE2150695B2 (en) | 1971-10-12 | 1971-10-12 | PROCESS FOR THE INSULATED CONSTRUCTION OF SEMICONDUCTOR ELEMENTS, PRINTED AND / OR MONOLITHIC AND / OR HYBRID INTEGRATED CIRCUITS |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2344174A1 (en) * | 1976-03-11 | 1977-10-07 | Bosch Gmbh Robert | VOLTAGE REGULATOR FOR GENERATORS |
FR2344173A1 (en) * | 1976-03-11 | 1977-10-07 | Bosch Gmbh Robert | ALTERNATOR EQUIPPED WITH A FREE RUN DIODE AND A VOLTAGE REGULATOR |
DE2926377A1 (en) * | 1978-06-30 | 1980-01-03 | Mitsubishi Electric Corp | SEMICONDUCTOR VOLTAGE REGULATOR |
DE3436842A1 (en) * | 1983-10-08 | 1985-04-25 | Ricoh Co., Ltd., Tokio/Tokyo | CARRIER ASSEMBLY FOR AN ELECTRONIC DEVICE |
DE3412296A1 (en) * | 1984-04-03 | 1985-10-03 | Brown, Boveri & Cie Ag, 6800 Mannheim | Hybrid circuit using a multilayer technique |
FR2617639A1 (en) * | 1987-07-02 | 1989-01-06 | Merlin Gerin | Method of manufacturing a power circuit including an alumina-based substrate and circuit obtained by this method |
DE3837975A1 (en) * | 1988-11-09 | 1990-05-10 | Telefunken Electronic Gmbh | ELECTRONIC CONTROL UNIT |
EP0521441A1 (en) * | 1991-07-01 | 1993-01-07 | Sumitomo Electric Industries, Limited | Insulated support for semiconductor device and method for manufacturing the same |
FR2790340A1 (en) * | 1999-02-26 | 2000-09-01 | Valeo Equip Electr Moteur | Electrical module for an automobile alternator and assembly containing alternator and module |
US8250748B2 (en) | 2008-09-08 | 2012-08-28 | Biotronik Crm Patent Ag | Method for producing an LTCC substrate |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3335184A1 (en) * | 1983-09-28 | 1985-04-04 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS |
DE3626151C3 (en) * | 1986-08-01 | 1995-06-14 | Siemens Ag | Voltage supply arrangement for a semiconductor integrated circuit |
DE3912280A1 (en) * | 1989-04-14 | 1990-10-18 | Bosch Gmbh Robert | METHOD FOR PRODUCING A SENSOR FOR DETERMINING PRESSURE FORCES |
-
1971
- 1971-10-12 DE DE19712150695 patent/DE2150695B2/en not_active Ceased
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2344174A1 (en) * | 1976-03-11 | 1977-10-07 | Bosch Gmbh Robert | VOLTAGE REGULATOR FOR GENERATORS |
FR2344173A1 (en) * | 1976-03-11 | 1977-10-07 | Bosch Gmbh Robert | ALTERNATOR EQUIPPED WITH A FREE RUN DIODE AND A VOLTAGE REGULATOR |
DE2926377A1 (en) * | 1978-06-30 | 1980-01-03 | Mitsubishi Electric Corp | SEMICONDUCTOR VOLTAGE REGULATOR |
DE3436842A1 (en) * | 1983-10-08 | 1985-04-25 | Ricoh Co., Ltd., Tokio/Tokyo | CARRIER ASSEMBLY FOR AN ELECTRONIC DEVICE |
DE3412296A1 (en) * | 1984-04-03 | 1985-10-03 | Brown, Boveri & Cie Ag, 6800 Mannheim | Hybrid circuit using a multilayer technique |
FR2617639A1 (en) * | 1987-07-02 | 1989-01-06 | Merlin Gerin | Method of manufacturing a power circuit including an alumina-based substrate and circuit obtained by this method |
DE3837975A1 (en) * | 1988-11-09 | 1990-05-10 | Telefunken Electronic Gmbh | ELECTRONIC CONTROL UNIT |
US5159532A (en) * | 1988-11-09 | 1992-10-27 | Telefunken Electronic Gmbh | Electronic control unit with multiple hybrid circuit assemblies integrated on a single common ceramic carrier |
EP0521441A1 (en) * | 1991-07-01 | 1993-01-07 | Sumitomo Electric Industries, Limited | Insulated support for semiconductor device and method for manufacturing the same |
US5455453A (en) * | 1991-07-01 | 1995-10-03 | Sumitomo Electric Industries, Ltd. | Plastic package type semiconductor device having a rolled metal substrate |
US5643834A (en) * | 1991-07-01 | 1997-07-01 | Sumitomo Electric Industries, Ltd. | Process for manufacturing a semiconductor substrate comprising laminated copper, silicon oxide and silicon nitride layers |
FR2790340A1 (en) * | 1999-02-26 | 2000-09-01 | Valeo Equip Electr Moteur | Electrical module for an automobile alternator and assembly containing alternator and module |
US8250748B2 (en) | 2008-09-08 | 2012-08-28 | Biotronik Crm Patent Ag | Method for producing an LTCC substrate |
Also Published As
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DE2150695B2 (en) | 1977-09-15 |
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