DE2055661A1 - Monolithisch integrierte Festkörperschaltung - Google Patents

Monolithisch integrierte Festkörperschaltung

Info

Publication number
DE2055661A1
DE2055661A1 DE19702055661 DE2055661A DE2055661A1 DE 2055661 A1 DE2055661 A1 DE 2055661A1 DE 19702055661 DE19702055661 DE 19702055661 DE 2055661 A DE2055661 A DE 2055661A DE 2055661 A1 DE2055661 A1 DE 2055661A1
Authority
DE
Germany
Prior art keywords
zone
collector
monolithically integrated
semiconductor element
state circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19702055661
Other languages
German (de)
English (en)
Other versions
DE2055661B2 (it
Inventor
Harald 7800 Freiburg. P Schilling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Priority to DE19702055661 priority Critical patent/DE2055661A1/de
Priority to IT3066571A priority patent/IT941368B/it
Priority to FR7140345A priority patent/FR2113906B1/fr
Publication of DE2055661A1 publication Critical patent/DE2055661A1/de
Publication of DE2055661B2 publication Critical patent/DE2055661B2/de
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
DE19702055661 1970-11-12 1970-11-12 Monolithisch integrierte Festkörperschaltung Ceased DE2055661A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19702055661 DE2055661A1 (de) 1970-11-12 1970-11-12 Monolithisch integrierte Festkörperschaltung
IT3066571A IT941368B (it) 1970-11-12 1971-11-03 Circuito integrato monolitico allo stato solido
FR7140345A FR2113906B1 (it) 1970-11-12 1971-11-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702055661 DE2055661A1 (de) 1970-11-12 1970-11-12 Monolithisch integrierte Festkörperschaltung

Publications (2)

Publication Number Publication Date
DE2055661A1 true DE2055661A1 (de) 1972-06-29
DE2055661B2 DE2055661B2 (it) 1975-02-13

Family

ID=5787899

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702055661 Ceased DE2055661A1 (de) 1970-11-12 1970-11-12 Monolithisch integrierte Festkörperschaltung

Country Status (3)

Country Link
DE (1) DE2055661A1 (it)
FR (1) FR2113906B1 (it)
IT (1) IT941368B (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008106A1 (de) * 1978-08-08 1980-02-20 Siemens Aktiengesellschaft Halbleitervorrichtung mit mehreren in einem Halbleiterkristall vereinigten und eine integrierte Schaltung bildenden Halbleiterelementen mit pn-Übergängen

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
FR2492165A1 (fr) * 1980-05-14 1982-04-16 Thomson Csf Dispositif de protection contre les courants de fuite dans des circuits integres

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008106A1 (de) * 1978-08-08 1980-02-20 Siemens Aktiengesellschaft Halbleitervorrichtung mit mehreren in einem Halbleiterkristall vereinigten und eine integrierte Schaltung bildenden Halbleiterelementen mit pn-Übergängen

Also Published As

Publication number Publication date
FR2113906B1 (it) 1978-06-02
FR2113906A1 (it) 1972-06-30
DE2055661B2 (it) 1975-02-13
IT941368B (it) 1973-03-01

Similar Documents

Publication Publication Date Title
DE3203066C2 (de) Integrierte Halbleiterschaltungsanordnung mit zwei gegenpolig geschalteten Dioden
DE3834841C2 (de) Integrierte Anordnung in einem Substrat zur Vermeidung parasitärer Substrateffekte
DE3780390T2 (de) Integrierter schaltkreis zur abschirmung von ladungstraegerinjektionen in das substrat, insbesondere bei schaltkreisen mit induktiven und kapazitiven lasten.
DE69305909T2 (de) Leistungsanordnung mit isoliertem Gate-Kontakt-Gebiet
DE1614373C2 (it)
CH668505A5 (de) Halbleiterbauelement.
DE1639052A1 (de) MOS-Halbleiteranordnung mit Durchschlagschutz
DE3227536A1 (de) Darlington-transistorschaltung
DE69121615T2 (de) Schaltungsanordnung zur Verhinderung des Latch-up-Phänomens in vertikalen PNP-Transistoren mit isoliertem Kollektor
DE2055661A1 (de) Monolithisch integrierte Festkörperschaltung
DE69031610T2 (de) Monolitisch integrierte Halbleitervorrichtung, die eine Kontrollschaltung und einen Leistungsteil mit vertikalem Stromfluss umfasst, und Verfahren zu ihrer Herstellung
DE69416624T2 (de) Monolitisches Bauelement mit einer Schutzdiode, die mit einer Vielzahl von seriell geschalteten Diodenpaaren parallelgeschaltet ist, und dessen Verwendungen
EP0000472B1 (de) Hochintegrierte Halbleiteranordnung enthaltend eine Dioden-/Widerstandskonfiguration
DE2046053A1 (de) Integrierte Schaltung
DE2559361C2 (de) Halbleiterbauelement mit mehreren, Feldeffekttransistoren definierenden Zonen
DE2922926C2 (de) Mit zwei Anschlüssen versehener, optisch zündbarer, monolithischer Zweiweg-Thyristor
DE2718185A1 (de) Halbleiter-verbundanordnung fuer hohe spannungen
DE3615049C2 (de) Integrierte Widerstandsanordnung mit Schutzelement gegen Verpolung und Über- bzw. Unterspannung
EP0176762B1 (de) Monolithisch integrierte bipolare Darlington-Schaltung
EP0442064B1 (de) Eingangsschutzstruktur für integrierte Schaltungen
DE2706031C2 (it)
EP0477393B1 (de) Eingangsschutzstruktur für integrierte Schaltungen
DE2728083A1 (de) Halbleiterdiode mit kollektorring fuer monolithische integrierte schaltung
DE3142591A1 (de) Ueberspannungsschutzschaltung
EP0008399B1 (de) Monolithisch integrierte Halbleiterschaltung mit mindestens einem Lateraltransistor

Legal Events

Date Code Title Description
BF Willingness to grant licences
BHV Refusal