DE202013100293U1 - Integrally formed high efficiency multilayer light emitting device - Google Patents
Integrally formed high efficiency multilayer light emitting device Download PDFInfo
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- DE202013100293U1 DE202013100293U1 DE202013100293U DE202013100293U DE202013100293U1 DE 202013100293 U1 DE202013100293 U1 DE 202013100293U1 DE 202013100293 U DE202013100293 U DE 202013100293U DE 202013100293 U DE202013100293 U DE 202013100293U DE 202013100293 U1 DE202013100293 U1 DE 202013100293U1
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- 239000002184 metal Substances 0.000 claims abstract description 16
- 230000017525 heat dissipation Effects 0.000 claims abstract description 12
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- 229910052802 copper Inorganic materials 0.000 claims description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
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- 238000003801 milling Methods 0.000 claims description 2
- 229920001225 polyester resin Polymers 0.000 claims description 2
- 239000004645 polyester resin Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
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- 229920006128 poly(nonamethylene terephthalamide) Polymers 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 abstract 2
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/001—Arrangement of electric circuit elements in or on lighting devices the elements being electrical wires or cables
- F21V23/002—Arrangements of cables or conductors inside a lighting device, e.g. means for guiding along parts of the housing or in a pivoting arm
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
- F21V29/763—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/77—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
- F21V29/773—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Integral ausgebildete hocheffiziente mehrschichtige lichtemittierende Vorrichtung, aufweisend: einen Hitzeabfuhrsitz (1), der eine Kammer (11), die einen Aufnahmeraum hat und die an einer Oberseite des Hitzeabfuhrsitzes (1) ausgebildet ist, und eine Nut (111) aufweist, die in einem Boden der Kammer (11) ausgebildet ist und die zwei geneigte innere Seitenwände (1111) aufweist, so dass Licht mittels der zwei geneigten inneren Seitenwände (1111) aus der Kammer (11) heraus reflektiert wird, wobei der Hitzeabfuhrsitz (1) mindestens ein durchgehendes Loch (15) hat, das longitudinal darin ausgebildet ist; eine Mehrzahl von lichtemittierenden Chips (3), die in der Nut (11) angeordnet sind, wobei die lichtemittierenden Chips (3) voneinander beabstandet angeordnet sind und die lichtemittierenden Chips (3) mittels Drahtbondens unter Verwendung von Metalldrähten elektrisch miteinander verbunden sind; und einen Leiterrahmen (5), der in dem mindestens einen durchgehenden Loch (15) angeordnet ist, wobei ein oberer und ein unterer Abschnitt des mindestens einen durchgehenden Lochs (15) mittels...An integrally formed high-efficiency multilayer light-emitting device comprising: a heat-removing seat (1) having a chamber (11) having a receiving space formed on an upper surface of the heat-dissipating seat (1) and a groove (111) formed in one Bottom of the chamber (11) is formed and the two inclined inner side walls (1111), so that light is reflected by the two inclined inner side walls (1111) out of the chamber (11), wherein the heat dissipation seat (1) at least one through Hole (15) formed longitudinally therein; a plurality of light emitting chips (3) disposed in the groove (11), the light emitting chips (3) being spaced apart from each other, and the light emitting chips (3) being electrically connected to each other by wire bonding using metal wires; and a lead frame (5) disposed in the at least one penetrating hole (15), wherein upper and lower portions of the at least one penetrating hole (15) are formed by means of ...
Description
HINTERGRUND DER ERFINDUNGBACKGROUND OF THE INVENTION
1. Gebiet der Erfindung1. Field of the invention
Die vorliegende Erfindung betrifft eine lichtemittierende Vorrichtung und mehr ins Besondere eine integral ausgebildete hocheffiziente mehrschichtige lichtemittierende Vorrichtung, bei der die Helligkeit und die Gleichmäßigkeit der Lichtabgabe (beispielsweise der Lichtverteilung, beispielsweise der Lichtstärkeverteilung) verbessert werden und die Mengen an Leuchtstoff und Silikon reduziert sind.The present invention relates to a light emitting device, and more particularly to an integrally formed high efficiency multilayer light emitting device in which the brightness and uniformity of light output (eg, light distribution, eg, luminous intensity distribution) are improved and the amounts of phosphor and silicone are reduced.
2. Stand der Technik2. State of the art
Die Lichtemissionstheorie von LEDs, welche unterschiedlich ist zu der Theorie der elektrischen Entladung, der Hitze und der Lichtemission von Glühlampen, nutzt einen Vorteil von intrinsischen Eigenschaften von Halbleitern. Da Licht emittiert wird, wenn elektrischer Strom vorwärts über den PN-übergang eines Halbleiters fließt, wird die LED auch als kaltes Licht bezeichnet. Die LED hat die Vorteile einer hohen Haltbarkeit, einer langen Lebensdauer, eines geringen Gewichts, eines geringen Energieverbrauchs und ist frei von giftigen Substanzen wie Quecksilber und kann daher weitverbreitet in der Industrie der lichtemittierenden Vorrichtung verwendet werden und LEDs sind häufig in Anordnungen angeordnet und werden in elektrischen Werbetafeln oder Verkehrsschildern verwendet.The light emission theory of LEDs, which is different from the theory of electrical discharge, heat and light emission from incandescent lamps, takes advantage of intrinsic properties of semiconductors. Since light is emitted when electric current flows forward across the PN junction of a semiconductor, the LED is also referred to as cold light. The LED has the advantages of high durability, long life, low weight, low power consumption, and is free of toxic substances such as mercury, and therefore can be widely used in the light emitting device industry, and LEDs are often arranged in arrays and are incorporated in the art used electric billboards or road signs.
Herkömmlicherweise wird eine Phosphorschicht auf der lichtemittierenden Oberfläche ausgebildet. Normalerweise wird eine Lösung, die den Leuchtstoff enthält, auf die lichtemittierende Oberfläche gefüllt, auf dieser abgeschieden oder die lichtemittierende Oberfläche wird mit der Lösung beschichtet. Die Leuchtstoffschicht ist in der Lage, zumindest einen Teil eines ersten farbigen Lichts, das von dem lichtemittierenden Chip emittiert wird, zu absorbieren und nachfolgend ein zweites farbiges Licht zu emittieren, und das erste farbige Licht und das zweite farbige Licht werden in der Phosphorschicht miteinander vermischt, um die gewünschte Lichtfarbe zu erzeugen.Conventionally, a phosphor layer is formed on the light-emitting surface. Normally, a solution containing the phosphor is filled on the light-emitting surface, deposited thereon or the light-emitting surface is coated with the solution. The phosphor layer is capable of absorbing at least part of a first colored light emitted from the light emitting chip and subsequently emitting a second colored light, and the first colored light and the second colored light are mixed with each other in the phosphor layer to create the desired light color.
Jedoch, um die Helligkeit der herkömmlichen LED-Gehäusestruktur zu erhöhen, sollte zum Anordnen einer Mehrzahl von LED-Chips in dem Gehäusemodul
Darüber hinaus werden die LED-Chips
KURZE BESCHREIBUNG DER ERFINDUNGBRIEF DESCRIPTION OF THE INVENTION
Eine Aufgabe der vorliegenden Erfindung ist es, eine integral ausgebildete hocheffiziente mehrschichtige lichtemittierende Vorrichtung bereitzustellen. Die integral ausgebildete hocheffiziente mehrschichtige lichtemittierende Vorrichtung weist auf: einen Hitzeabfuhrsitz (beispielsweise einen Träger- und Kühlkörper), der eine Kammer, die einen Aufnahmeraum hat und die auf einer Oberseite des Hitzeabfuhrsitzes ausgebildet ist, und eine Nut aufweist, die an einem Boden der Kammer ausgebildet ist, wobei die Nut zwei geneigte innere Seitenwände derart aufweist, dass das Licht von den zwei geneigten inneren Seitenwänden aus der Kammer heraus reflektiert wird, und wobei der Hitzeabfuhrsitz mindestens ein durchgehendes Loch hat, das longitudinal darin ausgebildet ist; eine Mehrzahl von lichtemittierenden Chips (beispielswiese Dies), die in der Nut angeordnet sind, wobei die lichtemittierenden Chips voneinander beabstandet angeordnet sind und mittels Drahtbondens unter Verwendung von Metalldrähten elektrisch miteinander verbunden sind; und einen Leiterrahmen, der in dem mindestens einen durchgehenden Loch angeordnet ist, wobei ein oberer und ein unterer Abschnitt des mindestens einen durchgehenden Lochs mittels einer Dichtung derart abgedichtet sind, dass der Leiterrahmen in dem mindestens einen Loch festgelegt (beispielsweise fixiert) ist, wobei der Leiterrahmen zwei leitfähige Stäbe und eine Hülse aufweist, wobei die leitfähigen Stäbe in der Hülse angeordnet sind, wobei zwei Enden jedes leitfähigen Stabs aus der Hülse hervorstehen, wobei die leitfähigen Stäbe elektrisch mit den lichtemittierenden Chips mittels Drahtbondens unter Verwendung von Metalldrähten verbunden sind.An object of the present invention is to provide an integrally formed high efficiency multilayer light emitting device. The integrally formed high-efficiency multilayer light-emitting device comprises: a heat-removing seat (for example, a support and heat sink) having a chamber having a receiving space formed on an upper surface of the heat-dissipating seat and a groove formed at a bottom of the chamber the groove having two inclined inner sidewalls such that the light is reflected from the two sloped inner sidewalls out of the chamber, and wherein the heat removal seat has at least one through hole formed longitudinally therein; a plurality of light-emitting chips (for example, dies) disposed in the groove, the light-emitting chips being spaced apart from each other and electrically connected to each other by wire bonding using metal wires; and a lead frame disposed in the at least one through hole, wherein an upper and a bottom portion of the at least one through hole are sealed by means of a seal such that the lead frame is fixed (eg fixed) in the at least one hole, wherein the lead frame comprises two conductive rods and a sleeve, wherein the conductive rods are arranged in the sleeve, wherein two ends of each conductive rod protrude from the sleeve, the conductive rods being electrically connected to the light emitting chips by wire bonding using metal wires.
Eine Phosphorschicht und eine Silikonschutzschicht sind in der Nut ausgebildet. Die Nut ist sehr fein (beispielsweise sehr dünn, schmal und/oder flach), so dass nur sehr geringe Mengen an Leuchtstoff und Silikon zum Füllen der Nut und zum Bedecken der lichtemittierenden Chips verwendet werden, wodurch die Materialkosten und die Herstellungskosten stark reduziert werden.A phosphor layer and a silicone protective layer are formed in the groove. The groove is very fine (for example, very thin, narrow and / or flat), so that only very small amounts of phosphor and silicone are used to fill the groove and to cover the light emitting chips, thereby greatly reducing material costs and manufacturing costs.
Darüber hinaus, wenn das gesamte Licht, das von den lichtemittierenden Chips, die in der Nut angeordnet sind, emittiert wird, von den beiden geneigten inneren Seitenwänden in im Wesentlichen dem gleichen Winkel reflektiert wird, wird die Gleichmäßigkeit der Lichtabgabe (beispielsweise der Lichtverteilung, beispielsweise der Lichtstärkeverteilung) verbessert. Deshalb werden bei der vorliegenden Erfindung die Gleichmäßigkeit der Lichtabgabe verbessert und die Mengen an Leuchtstoff und Silikon, die verwendet werden, reduziert.Moreover, when all the light emitted from the light-emitting chips arranged in the groove is reflected by the two inclined inner side walls at substantially the same angle, uniformity of light output (for example, light distribution, for example the light intensity distribution) improved. Therefore, in the present invention, the uniformity of light output is improved and the amounts of phosphor and silicone used are reduced.
KURZE BESCHREIBUNG DER ZEICHNUNGENBRIEF DESCRIPTION OF THE DRAWINGS
Die vorliegende Erfindung wird den Fachmännern auf diesem Gebiet beim Lesen der folgenden detaillierten Beschreibung einer bevorzugten Ausführungsform derselben mit Bezug zu den beigefügten Zeichnungen offensichtlich. In den Zeichnungen zeigen:The present invention will become apparent to those skilled in the art upon reading the following detailed description of a preferred embodiment thereof with reference to the accompanying drawings. In the drawings show:
DETAILLIERTE BESCHREIBUNG DER BEVORZUGTEN AUSFÜHRUNGSFORMENDETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Die beigefügten Zeichnungen sind eingeschlossen, um ein weiteres Verständnis der Erfindung bereitzustellen und sind in dieser Beschreibung aufgenommen und stellen einen Teil derselben dar. Die Zeichnungen zeigen Ausführungsformen der Erfindung und dienen zusammen mit der Beschreibung dazu, die vorliegende Erfindung zu erläutern.The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the present invention.
Der Hitzeabfuhrsitz
Der Hitzeabfuhrsitz
Die lichtemittierenden Chips
Die Nut
Zwei reflektierende Metallschichten können entsprechend auf den beiden geneigten inneren Seitenwänden
Die Nut
Der Leiterrahmen
Die oberen Enden der beiden leitfähigen Stäbe
Die Nut
Die integral ausgebildete hocheffiziente mehrschichtige lichtemittierende Vorrichtung der vorliegenden Erfindung kann ferner eine Linsenmaske
Zwei Seiten jeder der Hitzeabfuhrfinnen
Darüber hinaus ist der Hitzeabfuhrsitz
Deshalb können, wie von der dritten Ausführungsform ersichtlich, die Kammer
Bei der vorliegenden Erfindung ist die Nut
Darüber hinaus, wenn das gesamte Licht, das von den lichtemittierenden Chips
Obwohl die vorliegende Erfindung mit Bezug auf die bevorzugten Ausführungsformen derselben beschrieben wurde, ist es den Fachmännern auf diesem Gebiet offensichtlich, dass eine Mehrzahl von Modifikationen und Änderungen vorgenommen werden können, ohne dass von dem Umfang der vorliegenden Erfindung, welche beabsichtigt ist mittels der angehängten Ansprüche definiert zu sein, abgewichen wird.Although the present invention has been described with reference to the preferred embodiments thereof, it will be apparent to those skilled in the art that a plurality of modifications and changes may be made without departing from the scope of the present invention, which is intended by the appended claims to be defined, deviated.
Claims (13)
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Application Number | Priority Date | Filing Date | Title |
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TW101116665 | 2012-05-10 | ||
TW101116665A TW201347244A (en) | 2012-05-10 | 2012-05-10 | Integrated high efficiency multi-layer lighting device |
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DE202013100293U1 true DE202013100293U1 (en) | 2013-03-11 |
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---|---|---|---|
DE202013100293U Expired - Lifetime DE202013100293U1 (en) | 2012-05-10 | 2013-01-22 | Integrally formed high efficiency multilayer light emitting device |
DE201310100611 Ceased DE102013100611A1 (en) | 2012-05-10 | 2013-01-22 | Integrally-formed multi-layer light emitting device has lead frame with conductive rods arranged in sleeve, so that rod ends are extended from sleeve, and rods are connected to light emitting chip by metal-wire bonding |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE201310100611 Ceased DE102013100611A1 (en) | 2012-05-10 | 2013-01-22 | Integrally-formed multi-layer light emitting device has lead frame with conductive rods arranged in sleeve, so that rod ends are extended from sleeve, and rods are connected to light emitting chip by metal-wire bonding |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2013236047A (en) |
KR (1) | KR101401919B1 (en) |
DE (2) | DE202013100293U1 (en) |
MY (1) | MY164690A (en) |
TW (1) | TW201347244A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6115826B2 (en) * | 2013-11-26 | 2017-04-19 | 東芝ライテック株式会社 | Lighting equipment for moving objects |
JP6467206B2 (en) * | 2014-01-28 | 2019-02-06 | 株式会社小糸製作所 | Light source unit |
CN103899955A (en) * | 2014-03-14 | 2014-07-02 | 魏百远 | Efficient-heat-dissipation LED module structure |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008311471A (en) * | 2007-06-15 | 2008-12-25 | Toyoda Gosei Co Ltd | Light emitting device |
KR100705011B1 (en) | 2005-08-31 | 2007-04-13 | 바이오닉스(주) | light emitting apparatus |
TW200725940A (en) * | 2005-12-29 | 2007-07-01 | Anteya Technology Corp | LED package structure |
KR101210090B1 (en) * | 2006-03-03 | 2012-12-07 | 엘지이노텍 주식회사 | Metal core printed circuit board and light-emitting diode packaging method thereof |
KR100714749B1 (en) | 2006-03-21 | 2007-05-04 | 삼성전자주식회사 | Light emitting device packaging module and method of manufacturing the same |
KR101048440B1 (en) | 2010-04-29 | 2011-07-11 | 금호전기주식회사 | Heat sink capable of variably mounting led module and illumination device using the same |
JP3162599U (en) * | 2010-06-25 | 2010-09-09 | 李家茂 | Ring package structure |
KR101054305B1 (en) | 2010-12-30 | 2011-08-08 | 금강전기 (주) | Led lighting unit and manufacturing method thereof |
TWM409367U (en) * | 2011-01-28 | 2011-08-11 | Fin Core Corp | Heat-dissipation module and LED lamp having heat-dissipation module |
TWM424620U (en) * | 2011-08-03 | 2012-03-11 | Gem Weltronics Twn Corp | Multi-layer array type LED light engine structure improvement |
TWM422041U (en) * | 2011-09-16 | 2012-02-01 | Zi-Hua Chen | High-power lightweight LED bulb |
-
2012
- 2012-05-10 TW TW101116665A patent/TW201347244A/en not_active IP Right Cessation
- 2012-10-05 JP JP2012223119A patent/JP2013236047A/en active Pending
- 2012-10-15 KR KR1020120114027A patent/KR101401919B1/en not_active IP Right Cessation
-
2013
- 2013-01-22 DE DE202013100293U patent/DE202013100293U1/en not_active Expired - Lifetime
- 2013-01-22 DE DE201310100611 patent/DE102013100611A1/en not_active Ceased
- 2013-01-25 MY MYUI2013700153A patent/MY164690A/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20130126434A (en) | 2013-11-20 |
MY164690A (en) | 2018-01-30 |
JP2013236047A (en) | 2013-11-21 |
KR101401919B1 (en) | 2014-06-27 |
DE102013100611A1 (en) | 2013-11-14 |
TWI470841B (en) | 2015-01-21 |
TW201347244A (en) | 2013-11-16 |
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Legal Events
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Effective date: 20130502 |
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R157 | Lapse of ip right after 6 years |