DE19880712T1 - Verfahren zur Züchtung von Einkristallen - Google Patents

Verfahren zur Züchtung von Einkristallen

Info

Publication number
DE19880712T1
DE19880712T1 DE19880712T DE19880712T DE19880712T1 DE 19880712 T1 DE19880712 T1 DE 19880712T1 DE 19880712 T DE19880712 T DE 19880712T DE 19880712 T DE19880712 T DE 19880712T DE 19880712 T1 DE19880712 T1 DE 19880712T1
Authority
DE
Germany
Prior art keywords
single crystals
growing single
growing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19880712T
Other languages
English (en)
Inventor
Teruo Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumitomo Sitix Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Sitix Corp filed Critical Sumitomo Sitix Corp
Publication of DE19880712T1 publication Critical patent/DE19880712T1/de
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19880712T 1997-04-30 1998-04-30 Verfahren zur Züchtung von Einkristallen Ceased DE19880712T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9128020A JPH10310485A (ja) 1997-04-30 1997-04-30 単結晶育成方法
PCT/JP1998/001975 WO1998049378A1 (fr) 1997-04-30 1998-04-30 Procede de tirage de monocristal

Publications (1)

Publication Number Publication Date
DE19880712T1 true DE19880712T1 (de) 1999-07-15

Family

ID=14974508

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19880712T Ceased DE19880712T1 (de) 1997-04-30 1998-04-30 Verfahren zur Züchtung von Einkristallen

Country Status (4)

Country Link
US (1) US6267816B1 (de)
JP (1) JPH10310485A (de)
DE (1) DE19880712T1 (de)
WO (1) WO1998049378A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002000970A1 (fr) * 2000-06-27 2002-01-03 Shin-Etsu Handotai Co., Ltd. Procede de production de monocristal de silicium
DE10102126A1 (de) * 2001-01-18 2002-08-22 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium
US6808269B2 (en) * 2002-01-16 2004-10-26 Eastman Kodak Company Projection apparatus using spatial light modulator
JP6987057B2 (ja) 2015-12-04 2021-12-22 グローバルウェーハズ カンパニー リミテッドGlobalWafers Co., Ltd. 低酸素含有シリコンを生産するシステム及び方法
JP7036116B2 (ja) * 2017-06-29 2022-03-15 株式会社Sumco シリコン単結晶の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178720A (en) 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
JP3598634B2 (ja) * 1996-01-30 2004-12-08 信越半導体株式会社 シリコン単結晶の製造方法
JP3443822B2 (ja) * 1996-03-27 2003-09-08 信越半導体株式会社 シリコン単結晶の製造方法
US5935327A (en) * 1996-05-09 1999-08-10 Texas Instruments Incorporated Apparatus for growing silicon crystals
JPH10130100A (ja) * 1996-10-24 1998-05-19 Komatsu Electron Metals Co Ltd 半導体単結晶の製造装置および製造方法

Also Published As

Publication number Publication date
US6267816B1 (en) 2001-07-31
JPH10310485A (ja) 1998-11-24
WO1998049378A1 (fr) 1998-11-05

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Legal Events

Date Code Title Description
8127 New person/name/address of the applicant

Owner name: SUMITOMO METAL INDUSTRIES, LTD., TOKIO/TOKYO, JP

8127 New person/name/address of the applicant

Owner name: SUMITOMO METAL INDUSTRIES, LTD., OSAKA, JP

8127 New person/name/address of the applicant

Owner name: SUMITOMO MITSUBISHI SILICON CORP., TOKIO/TOYKO, JP

8110 Request for examination paragraph 44
8131 Rejection