DE19781967T1 - Verfahren und Vorrichtung zum Ziehen eines Einkristalls - Google Patents
Verfahren und Vorrichtung zum Ziehen eines EinkristallsInfo
- Publication number
- DE19781967T1 DE19781967T1 DE19781967T DE19781967T DE19781967T1 DE 19781967 T1 DE19781967 T1 DE 19781967T1 DE 19781967 T DE19781967 T DE 19781967T DE 19781967 T DE19781967 T DE 19781967T DE 19781967 T1 DE19781967 T1 DE 19781967T1
- Authority
- DE
- Germany
- Prior art keywords
- pulling
- single crystal
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8249155A JP3050135B2 (ja) | 1996-08-30 | 1996-08-30 | 単結晶引き上げ方法及び単結晶引き上げ装置 |
JP26675596A JPH1095690A (ja) | 1996-09-17 | 1996-09-17 | 単結晶引き上げ装置 |
PCT/JP1997/003015 WO1998009007A1 (fr) | 1996-08-30 | 1997-08-29 | Procede et appareil de tirage de monocristal |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19781967T1 true DE19781967T1 (de) | 1999-09-09 |
Family
ID=26539119
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19781967.2A Expired - Lifetime DE19781967B3 (de) | 1996-08-30 | 1997-08-29 | Verfahren und Vorrichtung zum Ziehen eines Einkristalls |
DE19781967T Pending DE19781967T1 (de) | 1996-08-30 | 1997-08-29 | Verfahren und Vorrichtung zum Ziehen eines Einkristalls |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19781967.2A Expired - Lifetime DE19781967B3 (de) | 1996-08-30 | 1997-08-29 | Verfahren und Vorrichtung zum Ziehen eines Einkristalls |
Country Status (5)
Country | Link |
---|---|
US (1) | US6159282A (de) |
KR (1) | KR100486376B1 (de) |
DE (2) | DE19781967B3 (de) |
TW (1) | TW541365B (de) |
WO (1) | WO1998009007A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW498402B (en) * | 2000-04-26 | 2002-08-11 | Mitsubishi Material Silicon | Method for simulating the shape of the solid-liquid interface between a single crystal and a molten liquid, and the distribution of point defect of a single crystal |
US7282094B2 (en) * | 2003-05-28 | 2007-10-16 | Sumco Corporation | Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal |
DE102006034433B4 (de) * | 2006-07-26 | 2018-03-22 | Crystal Growing Systems Gmbh | Kristallziehanlage, Unterstützungsvorrichtung und Verfahren zur Her-stellung von schweren Kristallen |
JP5296992B2 (ja) | 2007-01-31 | 2013-09-25 | Sumco Techxiv株式会社 | シリコン結晶素材及びその製造方法 |
CN101660195B (zh) * | 2008-08-29 | 2012-05-23 | 昆山中辰矽晶有限公司 | 长晶炉拉晶杆 |
US9593433B2 (en) | 2011-04-06 | 2017-03-14 | Sumco Corporation | Crystal holding mechanism of single crystal pulling device and method for producing single crystal ingot |
JP6805354B2 (ja) * | 2017-08-23 | 2020-12-23 | 株式会社日立ハイテク | 画像処理装置、方法、及び荷電粒子顕微鏡 |
KR102490096B1 (ko) * | 2018-10-18 | 2023-01-17 | 주식회사 엘지화학 | 단결정 성장 장치 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4289572A (en) * | 1976-12-27 | 1981-09-15 | Dow Corning Corporation | Method of closing silicon tubular bodies |
JPS58135197A (ja) * | 1982-02-02 | 1983-08-11 | Toshiba Corp | 結晶製造装置 |
JPS61122187A (ja) * | 1984-11-20 | 1986-06-10 | Toshiba Mach Co Ltd | 単結晶引上機 |
JPS62288191A (ja) * | 1986-06-06 | 1987-12-15 | Kyushu Denshi Kinzoku Kk | 単結晶成長方法及びその装置 |
JPS6321280A (ja) * | 1986-07-10 | 1988-01-28 | Osaka Titanium Seizo Kk | 単結晶テール部の直径制御方法 |
JPS63252991A (ja) * | 1987-04-09 | 1988-10-20 | Mitsubishi Metal Corp | 落下防止保持部を有するcz単結晶 |
JPH07103000B2 (ja) * | 1990-03-30 | 1995-11-08 | 信越半導体株式会社 | 結晶引上装置 |
DE69112463T2 (de) * | 1990-03-30 | 1996-02-15 | Shinetsu Handotai Kk | Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren. |
JPH07515B2 (ja) * | 1990-04-11 | 1995-01-11 | 信越半導体株式会社 | 結晶引上装置 |
JP2816628B2 (ja) * | 1992-05-08 | 1998-10-27 | コマツ電子金属株式会社 | シリコン単結晶の引き上げ方法 |
JP2538748B2 (ja) * | 1992-11-27 | 1996-10-02 | 信越半導体株式会社 | 結晶径測定装置 |
JPH08225391A (ja) * | 1995-02-23 | 1996-09-03 | Fuji Elelctrochem Co Ltd | 引き上げ法による酸化物単結晶の製造方法 |
JP3402012B2 (ja) * | 1995-04-21 | 2003-04-28 | 信越半導体株式会社 | 単結晶の成長方法及び装置 |
US5653799A (en) * | 1995-06-02 | 1997-08-05 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
JP3402040B2 (ja) * | 1995-12-27 | 2003-04-28 | 信越半導体株式会社 | 単結晶保持装置 |
JP2956568B2 (ja) * | 1996-01-25 | 1999-10-04 | 住友金属工業株式会社 | 単結晶引上げ装置 |
JP2973916B2 (ja) * | 1996-03-15 | 1999-11-08 | 住友金属工業株式会社 | 種結晶保持具及び該種結晶保持具を用いた単結晶の引き上げ方法 |
US5935321A (en) * | 1997-08-01 | 1999-08-10 | Motorola, Inc. | Single crystal ingot and method for growing the same |
-
1997
- 1997-08-28 TW TW086112377A patent/TW541365B/zh not_active IP Right Cessation
- 1997-08-29 KR KR10-1999-7001476A patent/KR100486376B1/ko not_active IP Right Cessation
- 1997-08-29 US US09/242,829 patent/US6159282A/en not_active Expired - Lifetime
- 1997-08-29 DE DE19781967.2A patent/DE19781967B3/de not_active Expired - Lifetime
- 1997-08-29 WO PCT/JP1997/003015 patent/WO1998009007A1/ja active IP Right Grant
- 1997-08-29 DE DE19781967T patent/DE19781967T1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
WO1998009007A1 (fr) | 1998-03-05 |
KR20000035820A (ko) | 2000-06-26 |
DE19781967B3 (de) | 2016-05-12 |
KR100486376B1 (ko) | 2005-04-29 |
US6159282A (en) | 2000-12-12 |
TW541365B (en) | 2003-07-11 |
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