DE19780252T1 - Verfahren und Vorrichtungen zum (Aus)Ziehen eines Einkristalls - Google Patents

Verfahren und Vorrichtungen zum (Aus)Ziehen eines Einkristalls

Info

Publication number
DE19780252T1
DE19780252T1 DE19780252T DE19780252T DE19780252T1 DE 19780252 T1 DE19780252 T1 DE 19780252T1 DE 19780252 T DE19780252 T DE 19780252T DE 19780252 T DE19780252 T DE 19780252T DE 19780252 T1 DE19780252 T1 DE 19780252T1
Authority
DE
Germany
Prior art keywords
pulling
devices
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19780252T
Other languages
English (en)
Other versions
DE19780252B4 (de
Inventor
Teruo Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Publication of DE19780252T1 publication Critical patent/DE19780252T1/de
Application granted granted Critical
Publication of DE19780252B4 publication Critical patent/DE19780252B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19780252T 1996-02-29 1997-02-27 Verfahren und Vorrichtungen zum (Aus)Ziehen eines Einkristalls Expired - Fee Related DE19780252B4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP8/43765 1996-02-29
JP4376596 1996-02-29
JP8/43766 1996-02-29
JP4376696 1996-02-29
PCT/JP1997/000594 WO1997032059A1 (fr) 1996-02-29 1997-02-27 Procede et appareil pour retirer un monocristal

Publications (2)

Publication Number Publication Date
DE19780252T1 true DE19780252T1 (de) 1998-04-02
DE19780252B4 DE19780252B4 (de) 2005-09-08

Family

ID=26383599

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19780252T Expired - Fee Related DE19780252B4 (de) 1996-02-29 1997-02-27 Verfahren und Vorrichtungen zum (Aus)Ziehen eines Einkristalls

Country Status (5)

Country Link
US (1) US5916364A (de)
JP (1) JP3245866B2 (de)
KR (1) KR100293095B1 (de)
DE (1) DE19780252B4 (de)
WO (1) WO1997032059A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1160379A (ja) * 1997-06-10 1999-03-02 Nippon Steel Corp 無転位シリコン単結晶の製造方法
US5885344A (en) * 1997-08-08 1999-03-23 Memc Electronic Materials, Inc. Non-dash neck method for single crystal silicon growth
JP3267225B2 (ja) * 1997-12-26 2002-03-18 住友金属工業株式会社 単結晶引き上げ方法、及び単結晶引き上げ装置
JPH11302096A (ja) * 1998-02-18 1999-11-02 Komatsu Electronic Metals Co Ltd 単結晶製造用種結晶、単結晶製造用種結晶の製造方法、及び単結晶製造方法
EP1184339A3 (de) * 2000-09-01 2002-09-04 A.R.T.-Photonics GmbH Optische Faser und Herstellungsverfahren für eine optische Faser
US6482261B2 (en) 2000-12-29 2002-11-19 Ebara Solar, Inc. Magnetic field furnace
DE10137856B4 (de) * 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
US6866713B2 (en) * 2001-10-26 2005-03-15 Memc Electronic Materials, Inc. Seed crystals for pulling single crystal silicon
JP4184725B2 (ja) 2002-07-12 2008-11-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶半導体の製造方法、単結晶半導体の製造装置
JP4604478B2 (ja) * 2003-11-19 2011-01-05 コニカミノルタホールディングス株式会社 新規色素、着色組成物、インクジェット記録液、及びインクジェット記録方法
JP5163101B2 (ja) * 2007-12-25 2013-03-13 信越半導体株式会社 単結晶製造装置および製造方法
TW201350632A (zh) * 2012-06-12 2013-12-16 Wcube Co Ltd 藍寶石製造裝置及鏡頭保護玻璃
CN104911711B (zh) * 2015-06-16 2018-03-09 哈尔滨奥瑞德光电技术有限公司 一种加防护罩的籽晶结构
US10829869B2 (en) 2016-06-29 2020-11-10 Crystal Systems Corporation Single-crystal production equipment and single-crystal production method
EP3299498B1 (de) * 2016-07-28 2020-02-19 Crystal Systems Corporation Einkristallzüchtungsvorrichtung
CN110546315B (zh) 2018-03-29 2021-09-03 株式会社水晶*** 单晶制造装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL270246A (de) * 1961-10-13
SU400139A1 (ru) * 1971-07-07 1974-02-25 Фонд вноертш
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JPS60180993A (ja) * 1984-02-24 1985-09-14 Sumitomo Electric Ind Ltd ＧａＡｓ単結晶の引上方法
JPS60195087A (ja) * 1984-03-16 1985-10-03 Hamamatsu Photonics Kk 単結晶育成炉
AT395439B (de) * 1987-09-04 1992-12-28 Avl Verbrennungskraft Messtech Verfahren zum zuechten von kristallen und vorrichtung zur durchfuehrung des verfahrens
JPH01179796A (ja) * 1988-01-08 1989-07-17 Sumitomo Electric Ind Ltd 無転位ＧａＡｓ単結晶製造用の種結晶
US4971650A (en) * 1989-09-22 1990-11-20 Westinghouse Electric Corp. Method of inhibiting dislocation generation in silicon dendritic webs
JPH0426584A (ja) * 1990-05-18 1992-01-29 Osaka Titanium Co Ltd シリコン単結晶製造装置
JPH04104988A (ja) * 1990-08-20 1992-04-07 Fujitsu Ltd 単結晶成長方法
JP2959097B2 (ja) * 1990-10-19 1999-10-06 日本電気株式会社 単結晶の育成方法
US5292487A (en) * 1991-04-16 1994-03-08 Sumitomo Electric Industries, Ltd. Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor
JPH07206587A (ja) * 1994-01-10 1995-08-08 Hitachi Cable Ltd ＧａＡｓ単結晶の製造方法
US5607506A (en) * 1994-10-21 1997-03-04 University Of South Florida Growing crystalline sapphire fibers by laser heated pedestal techiques

Also Published As

Publication number Publication date
KR19990008159A (ko) 1999-01-25
US5916364A (en) 1999-06-29
WO1997032059A1 (fr) 1997-09-04
KR100293095B1 (ko) 2001-10-25
JP3245866B2 (ja) 2002-01-15
DE19780252B4 (de) 2005-09-08

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Legal Events

Date Code Title Description
8180 Miscellaneous part 1

Free format text: DER ANMELDER IST ZU AENDERN IN: SUMITOMO SITIX CORP., AMAGASAKI, HYOGO, JP

8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: SUMITOMO METAL INDUSTRIES, LTD., TOKIO/TOKYO, JP

8127 New person/name/address of the applicant

Owner name: SUMITOMO METAL INDUSTRIES, LTD., OSAKA, JP

8607 Notification of search results after publication
8127 New person/name/address of the applicant

Owner name: SUMITOMO MITSUBISHI SILICON CORP., TOKIO/TOYKO, JP

8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20140902