DE19780252T1 - Verfahren und Vorrichtungen zum (Aus)Ziehen eines Einkristalls - Google Patents
Verfahren und Vorrichtungen zum (Aus)Ziehen eines EinkristallsInfo
- Publication number
- DE19780252T1 DE19780252T1 DE19780252T DE19780252T DE19780252T1 DE 19780252 T1 DE19780252 T1 DE 19780252T1 DE 19780252 T DE19780252 T DE 19780252T DE 19780252 T DE19780252 T DE 19780252T DE 19780252 T1 DE19780252 T1 DE 19780252T1
- Authority
- DE
- Germany
- Prior art keywords
- pulling
- devices
- single crystal
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8/43765 | 1996-02-29 | ||
JP4376596 | 1996-02-29 | ||
JP8/43766 | 1996-02-29 | ||
JP4376696 | 1996-02-29 | ||
PCT/JP1997/000594 WO1997032059A1 (fr) | 1996-02-29 | 1997-02-27 | Procede et appareil pour retirer un monocristal |
Publications (2)
Publication Number | Publication Date |
---|---|
DE19780252T1 true DE19780252T1 (de) | 1998-04-02 |
DE19780252B4 DE19780252B4 (de) | 2005-09-08 |
Family
ID=26383599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19780252T Expired - Fee Related DE19780252B4 (de) | 1996-02-29 | 1997-02-27 | Verfahren und Vorrichtungen zum (Aus)Ziehen eines Einkristalls |
Country Status (5)
Country | Link |
---|---|
US (1) | US5916364A (de) |
JP (1) | JP3245866B2 (de) |
KR (1) | KR100293095B1 (de) |
DE (1) | DE19780252B4 (de) |
WO (1) | WO1997032059A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1160379A (ja) * | 1997-06-10 | 1999-03-02 | Nippon Steel Corp | 無転位シリコン単結晶の製造方法 |
US5885344A (en) * | 1997-08-08 | 1999-03-23 | Memc Electronic Materials, Inc. | Non-dash neck method for single crystal silicon growth |
JP3267225B2 (ja) * | 1997-12-26 | 2002-03-18 | 住友金属工業株式会社 | 単結晶引き上げ方法、及び単結晶引き上げ装置 |
JPH11302096A (ja) * | 1998-02-18 | 1999-11-02 | Komatsu Electronic Metals Co Ltd | 単結晶製造用種結晶、単結晶製造用種結晶の製造方法、及び単結晶製造方法 |
EP1184339A3 (de) * | 2000-09-01 | 2002-09-04 | A.R.T.-Photonics GmbH | Optische Faser und Herstellungsverfahren für eine optische Faser |
US6482261B2 (en) | 2000-12-29 | 2002-11-19 | Ebara Solar, Inc. | Magnetic field furnace |
DE10137856B4 (de) * | 2001-08-02 | 2007-12-13 | Siltronic Ag | Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium |
US6866713B2 (en) * | 2001-10-26 | 2005-03-15 | Memc Electronic Materials, Inc. | Seed crystals for pulling single crystal silicon |
JP4184725B2 (ja) | 2002-07-12 | 2008-11-19 | Sumco Techxiv株式会社 | 単結晶半導体の製造方法、単結晶半導体の製造装置 |
JP4604478B2 (ja) * | 2003-11-19 | 2011-01-05 | コニカミノルタホールディングス株式会社 | 新規色素、着色組成物、インクジェット記録液、及びインクジェット記録方法 |
JP5163101B2 (ja) * | 2007-12-25 | 2013-03-13 | 信越半導体株式会社 | 単結晶製造装置および製造方法 |
TW201350632A (zh) * | 2012-06-12 | 2013-12-16 | Wcube Co Ltd | 藍寶石製造裝置及鏡頭保護玻璃 |
CN104911711B (zh) * | 2015-06-16 | 2018-03-09 | 哈尔滨奥瑞德光电技术有限公司 | 一种加防护罩的籽晶结构 |
US10829869B2 (en) | 2016-06-29 | 2020-11-10 | Crystal Systems Corporation | Single-crystal production equipment and single-crystal production method |
EP3299498B1 (de) * | 2016-07-28 | 2020-02-19 | Crystal Systems Corporation | Einkristallzüchtungsvorrichtung |
CN110546315B (zh) | 2018-03-29 | 2021-09-03 | 株式会社水晶*** | 单晶制造装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL270246A (de) * | 1961-10-13 | |||
SU400139A1 (ru) * | 1971-07-07 | 1974-02-25 | Фонд вноертш | |
US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
JPS60180993A (ja) * | 1984-02-24 | 1985-09-14 | Sumitomo Electric Ind Ltd | GaAs単結晶の引上方法 |
JPS60195087A (ja) * | 1984-03-16 | 1985-10-03 | Hamamatsu Photonics Kk | 単結晶育成炉 |
AT395439B (de) * | 1987-09-04 | 1992-12-28 | Avl Verbrennungskraft Messtech | Verfahren zum zuechten von kristallen und vorrichtung zur durchfuehrung des verfahrens |
JPH01179796A (ja) * | 1988-01-08 | 1989-07-17 | Sumitomo Electric Ind Ltd | 無転位GaAs単結晶製造用の種結晶 |
US4971650A (en) * | 1989-09-22 | 1990-11-20 | Westinghouse Electric Corp. | Method of inhibiting dislocation generation in silicon dendritic webs |
JPH0426584A (ja) * | 1990-05-18 | 1992-01-29 | Osaka Titanium Co Ltd | シリコン単結晶製造装置 |
JPH04104988A (ja) * | 1990-08-20 | 1992-04-07 | Fujitsu Ltd | 単結晶成長方法 |
JP2959097B2 (ja) * | 1990-10-19 | 1999-10-06 | 日本電気株式会社 | 単結晶の育成方法 |
US5292487A (en) * | 1991-04-16 | 1994-03-08 | Sumitomo Electric Industries, Ltd. | Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor |
JPH07206587A (ja) * | 1994-01-10 | 1995-08-08 | Hitachi Cable Ltd | GaAs単結晶の製造方法 |
US5607506A (en) * | 1994-10-21 | 1997-03-04 | University Of South Florida | Growing crystalline sapphire fibers by laser heated pedestal techiques |
-
1997
- 1997-02-27 JP JP53080397A patent/JP3245866B2/ja not_active Expired - Fee Related
- 1997-02-27 WO PCT/JP1997/000594 patent/WO1997032059A1/ja active IP Right Grant
- 1997-02-27 US US08/930,361 patent/US5916364A/en not_active Expired - Lifetime
- 1997-02-27 KR KR1019970707684A patent/KR100293095B1/ko not_active IP Right Cessation
- 1997-02-27 DE DE19780252T patent/DE19780252B4/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR19990008159A (ko) | 1999-01-25 |
US5916364A (en) | 1999-06-29 |
WO1997032059A1 (fr) | 1997-09-04 |
KR100293095B1 (ko) | 2001-10-25 |
JP3245866B2 (ja) | 2002-01-15 |
DE19780252B4 (de) | 2005-09-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8180 | Miscellaneous part 1 |
Free format text: DER ANMELDER IST ZU AENDERN IN: SUMITOMO SITIX CORP., AMAGASAKI, HYOGO, JP |
|
8110 | Request for examination paragraph 44 | ||
8127 | New person/name/address of the applicant |
Owner name: SUMITOMO METAL INDUSTRIES, LTD., TOKIO/TOKYO, JP |
|
8127 | New person/name/address of the applicant |
Owner name: SUMITOMO METAL INDUSTRIES, LTD., OSAKA, JP |
|
8607 | Notification of search results after publication | ||
8127 | New person/name/address of the applicant |
Owner name: SUMITOMO MITSUBISHI SILICON CORP., TOKIO/TOYKO, JP |
|
8364 | No opposition during term of opposition | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20140902 |